Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf

Collector-emitter voltage peak value

Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time

VBE = 0 V

3.5
145

1000
1000
450
5
10
32
1.5
160

V
V
V
A
A
W
V
A
ns

PINNING - SOT186A
PIN

Ths 25 C
ICsat=2.5A,IB1=0.5A,IB2=0.8A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj

Collector to emitter voltage

Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

Ths 25 C

MIN.

MAX.

UNIT

-65
-

1000
450
1000
5
10
2
4
32
150
150

V
V
V
A
A
A
A
W
C
C

TYP.

MAX.

UNIT

3.95

K/W

55

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

R.M.S. isolation voltage from all

three terminals to external
heatsink

f = 50-60 Hz; sinusoidal

waveform;
R.H. 65% ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

10

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

450

10
-

mA
V

10
14

0.25
22
25

1.5
1.3
35
35

V
V

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
ICES
ICES
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE

PARAMETER
Collector cut-off current

CONDITIONS
1

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
Emitter cut-off current
VEB = 9 V; IC = 0 A
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A
Base-emitter saturation voltage
IC = 2.5 A; IB = 0.33 A
DC current gain
IC = 5 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V

hFEsat

IC = 2.5 A; VCE = 5 V

10

13.5

17

hFEsat

IC = 3.5 A; VCE = 5 V

10

12

TYP.

MAX.

UNIT

0.5
3.3
0.33

0.7
4
0.45

s
s
s

1.4
145

1.6
160

s
ns

1.7
160

1.9
200

s
ns

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

ton
ts
tf

PARAMETER

CONDITIONS

Switching times (resistive load)

ICsat = 2.5 A; IB1 = -IB2 = 0.5 A;

RL = 75 ohms; VBB2 = 4 V;

Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)

ts
tf

Turn-off storage time

Turn-off fall time
Switching times (inductive load)

ts
tf

Turn-off storage time

Turn-off fall time

ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H;

-VBB = 5 V
ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H;
-VBB = 5 V; Tj = 100 C

1 Measured with half sine-wave voltage (curve tracer).

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ICsat

90 %

+ 50v
100-200R

90 %

IC
10 %
ts

Horizontal

ton

tf

toff

Oscilloscope

IB1

IB

Vertical

10 %

300R

1R

tr

30ns

6V

30-60 Hz

-IB2

Fig.4. Switching times waveforms with resistive load.

Fig.1. Test circuit for VCEOsust.

IC / mA

VCC

LC

250
200

IB1

LB

100

T.U.T.
-VBB

min

VCE / V

VCEOsust

Fig.2. Oscilloscope display for VCEOsust.

Fig.5. Test circuit inductive load.

VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

VCC

ICsat
90 %
IC

RL
VIM

RB

10 %

T.U.T.

ts
toff

tp
IB

tf

IB1

t
-IB2

Fig.6. Switching times waveforms with inductive load.

Fig.3. Test circuit resistive load. VIM = -6 to +8 V

VCC = 250 V; tp = 20 s; = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ICon
90 %

VCEsat/V

2.0

IC

1.6
IC=1A

3A

2A

4A

1.2

10 %
tf

ts
toff

0.8

IBon

IB

0.4

t
0.0
0.01

-IBoff

Fig.7. Switching times waveforms with inductive load.

120
110

IB/A

1.00

10.00

Fig.10. Collector-Emitter saturation voltage.

Solid lines = typ values, VCEsat = f(IB); Tj=25C.

Normalised Derating

0.10

VBEsat/V

with heatsink compound

1.4

100
90

1.2

80
70

1.0

60

0.8

P tot

50
40

0.6

30

0.4

20
10

0.2

0
0

20

40

60

80
Ths / C

100

120

0.0

140

0.1

Fig.8. Normalised power dissipation.

PD% = 100PD/PD 25C = f (Ths)

1.0
IC/A

10.0

Fig.11. Base-Emitter saturation voltage.

Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.

h FE

VCEsat/V

100
0.5

5V

0.4

0.3

10

0.2

Tj = 25 C

1
0.01

1V

0.1

0.0

0.1

10

IC / A

Fig.9. Typical DC current gain. hFE = f(IC)

parameter VCE

September 1998

1
IC/A

10

Fig.12. Collector-Emitter saturation voltage.

Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

10

Zth / (K/W)

BUT11APX

BU1706AX

VCC

0.5
1

0.1

0.2
0.1
0.05

LC

0.02
tp

PD

D=

tp

IBon

VCL
LB

0.01
D=0
0.001

1u

T
10u 100u 1m 10m 100m
t/s

10

-VBB

T.U.T.

100

Fig.15. Test circuit RBSOA. Vcl 1000V; Vcc = 150V;

VBB = -5V; LB = 1H; Lc = 200H

Fig.13. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

IC/V
11

10

0
0

200

400

600

800

1,000

1,200

VCE CLAMP/V

Fig.14. Reverse bias safe operating area. Tj Tj max

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BUT11APX

IC / A

= 0.01

ICM max
10
IC max

tp =
10 us

II
100 us

(1)

1
1 ms
10 ms

0.1

(2)
500 ms
DC

III

0.01
1

10

1000

100
VCE / V

Fig.16. Forward bias safe operating area. Ths 25 C

(1)
(2)
I
II
III
NB:

Ptot max and Ptot peak max lines.

Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
RBE 100 and tp 0.6 s.
Mounted with heatsink compound and
30 5 newton force on the centre of the
envelope.

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g

10.3
max

4.6
max

3.2
3.0

2.9 max

2.8

Recesses (2x)
2.5
0.8 max. depth

6.4
15.8
19
max. max.

15.8
max

seating
plane

3 max.
not tinned
3
2.5
13.5
min.
1
0.4

1.0 (2x)
0.6
2.54

0.9
0.7

0.5
2.5

5.08

1.3

Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1998

Rev 1.000