ESE319 Introduction to Microelectronics

High Frequency BJT Model

Cascode BJT Amplifier

2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

Gain of 10 Amplifier Non-ideal Transistor

C in
RS

R1

RC
V CC

R2

RE

vs

Gain starts dropping at > 1MHz.

Why!
Because of internal transistor
capacitances that we have ignored
in our low frequency and mid-band models.

2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

Sketch of Typical Voltage Gain Response

for a CE Amplifier

AvdB

Low
Frequency
Band

High
Frequency
Band

Midband

ALL capacitances are neglected, i.e.

External C's s.c.
Internal C's o.c.
Due to external
3 dB
blocking and bypass capacitors.
Internal C's o.c.

Due to BJT parasitic

capacitors C and C.
External C's s.c.

20 log10Av dB

fL
BW = f H f L f
2008 Kenneth R. Laker, update 08Oct12 KRL

f
H

f Hz
H

GBP= Avmid BW

(log scale)
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ESE319 Introduction to Microelectronics

High Frequency Small-signal Model (Fwd. Act.)

SPICE
CJC = C0
CJE = Cje0

rx

TF = F
RB = rx

vbe

Two capacitors and a resistor added.

A base to emitter capacitor, C
A base to collector capacitor, C
A resistor, rx, representing the base
terminal resistance (rx << r)
2008 Kenneth R. Laker, update 08Oct12 KRL

C =

C 0
m

V CB
1

V 0c

C =C de C jeC de 2 C je 0 C de

C de = F g m

F = forward-base transit time

4

ESE319 Introduction to Microelectronics

High Frequency Small-signal Model (IC)

2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

High Frequency Small-signal Model

The transistor parasitic capacitances have a strong effect on circuit high
frequency performance! They attenuate base signals, decreasing vbe since
their reactance approaches zero (short circuit) at high frequencies.
As we will see later C is the principal cause of this gain loss at high
frequencies. At the base C looks like a capacitor of value k C connected
between base and emitter, where k > 1 and may be >> 1.
C

rx

This phenomenon is called the Miller Effect.

2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

Prototype Common Emitter Circuit

V CC

RC

R S C in
vs

RS

vo

RB
V B RE

vs

C byp

At high frequencies
low frequency
capacitors are short circuits
2008 Kenneth R. Laker, update 08Oct12 KRL

b
RB

c
C

v be

g m v be

vo

RC

High frequency
small-signal ac model

ESE319 Introduction to Microelectronics

Multisim Simulation
C

2 pF

RS

50

vs

RB
50 k

v be

g m v be

40 mS v be

2.5 k 12 pF

vo

RC

Mid-band gain

5.1 k

e
Avmid =g m R C =204

Half-gain point
2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

Introducing the Miller Effect

C

RS
vs

b
RB

c
C

v be

g m v be

vo

RC

e
The feedback connection of C between base and collector causes it to
appear in the amplifier like a large capacitor 1 K C has been inserted
Between the base and emitter terminals. This phenomenon is called the
Miller effect and the capacitive multiplier 1 K acting on C equals the
CE amplifier mid-band gain, i.e. K = A vmid =g m.R C
NOTE: CB and CC amplifiers do not suffer from the Miller effect, since in
these amplifiers, one side of C is connected directly to ground.
2008 Kenneth R. Laker, update 08Oct12 KRL

ESE319 Introduction to Microelectronics

Miller's Theorem
C
RS
vs

b
RB

c
-i

g m v be

e
R Br R S
v o vo
Avmid = =g m RC
v s v be

2008 Kenneth R. Laker, update 08Oct12 KRL

vo

RC

<=>

V be

Avmid V be

I
+

Vo

Vo
=A vmid =g m RC
V be
1
Z=
2 f C

10

ESE319 Introduction to Microelectronics

I 2 =I
I =I1 Z
+
+
Av V 1
V1
V2

Miller's Theorem
<=>

V 1V 2 V 1 Av V 1
V1
I = I 1=
=
=
=>
Z
Z
Z
1 Av
1
V 2 V 2
V 2 V 1
Av
V2
I =I 2=
=
=
=>
Z
Z
Z
1
1
Av

2008 Kenneth R. Laker, update 08Oct12 KRL

I 2 =I

I 1= I
+
V1

Z1 Z2

V 2 =Av V 1

V1 V1
Z
Z 1= = =
I1
I 1 Av

Z 1=

1
j 2 f C 1 Av

V2 V2
Z 2= =
=
I 2 I

Z if A >> 1
1
v
1
Av
Ignored in
V2 V2
1
practical
Z 2= =

I 2 I j 2 f C circuits
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ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis

C

b V be

RS
Vs

RB

IC

Determine effect of C :

c
C

V be

g m V be

Vo

IR

Using phasor notation:

I R =g m V be I C
or
V o =g m V be I C RC

RC

where

I C = V beV o j C

Note: The current through C

I C = V be g m V be RC I C RC j C
depends only on V be!

Vo
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis II

C

From slide 7:
I C = V be g m V be RC I C RC j C

b V be

RS

IC

Vs

Collect terms for I C

1 j RC C I C = 1 g m R C j C V be

and V be :

RB

IC =

1g m RC j C

1 j R C C

v be

g m V be

IR

V be 1 g m R C j C V be = j C eq V be

RC C 1

Miller Capacitance Ceq: C eq =1 Av C =1 g m RC C

2008 Kenneth R. Laker, update 08Oct12 KRL

13

Vo
C

RC

ESE319 Introduction to Microelectronics

b V be

RS
Vs

RB

IC

c
g m V be

IR

b V be

RS

Vo

Vs

RB

RC

IC

r
C
C eq
C

g m V be

IR

Vo
C

RC

C eq =1 Av C =1 g m RC C

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis III

C eq = 1 g m RC C
For our example circuit:
1g m RC =10.0405100=205
C eq =2052 pF 410 pF

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Simplified HF Model
C

b V be

RS

RB

Vs

IC
C

v be

Vo

g m V be

ro

'

R L =r o R CR L

RC R L

e
C

R Br
V =V s
R Br R S

'

'

R S =r RBR S

b V be

RS

'
s

'

Vs

RB

IC
C

v be

c
g m V be

Vo
'

RL

e
Thevenin Equiv.
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Simplified HF Model
C
R

'
S

IC

'

Vo

V be
'

Vs

RB

g m V be

'

R S =r RBR S
R Br
'
V s =V s
R Br R S

'

RL

Miller's Theorem
'

RS
'

Vs

C eq =1g m RC C
C tot =C C eq
2008 Kenneth R. Laker, update 08Oct12 KRL

R L =r o R CR L

b
RB

IC
Cr

Vo

V be

g m V be

C eq

'

RL

e
C tot
17

ESE319 Introduction to Microelectronics

Simplified HF Model
'

RS
V

'
s

b
RB

IC
Cr

V be

Vo

g m V be

C eq

'

R S =r RBR S
R Br
'
V s =V s
R Br R S

'

RL

e
C tot

C tot =C 1g m R C C

Vo
dB
Vs

1/ j C tot
V be =
V s'
1/ j C tot R S '
'

'

R L =r o R CR L

'

Vo
g m R L
g m R L
A v f =
=
V s 1 j 2 f C tot R'S
f
1 j
fH
1
'
f
=
Avmid =g m R L and H
2 C tot R'S
2008 Kenneth R. Laker, update 08Oct12 KRL

18

ESE319 Introduction to Microelectronics

Frequency-dependent beta hfe

jCV

IC = (gm jC)V

short-circuit
current
V =V be

The relationship ic = ib does not apply at high frequencies f > fH!

Using the relationship ic = f(V ) find the new relationship
between ib and ic. For ib (using phasor notation (Ix & Vx) for
frequency domain analysis):
1
where r x 0 (ignore rx)
I
=
j C C V
@ node B': b
r

2008 Kenneth R. Laker, update 08Oct12 KRL

19

ESE319 Introduction to Microelectronics

Frequency-dependent hfe or beta

jCV

1
I b=
j C C V
r

IC = (gm jC)V

@ node C: I c = g m j C V (ignore ro)

Leads to a new relationship between the Ib and Ic:

g m j C
Ic
h fe = =
Ib 1
j C C
r
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Frequency Response of hfe

h fe =

g m j C
1
j C C
r

multiplying N&D by r

g m j C r
h fe =
1 j C C r
factor N to isolate gm

C
1 j g m r
gm
h fe =
1 j C C r

2008 Kenneth R. Laker, update 08Oct12 KRL

IC
g m=
VT

VT
r =
IC

C
1
For small
=
1
low : low
s
gm
10

and:

low C C r 1

1
10

Note: low C C r=low C C low

gm
gm

We have:

h fe =g m r =
21

ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

C
f
1 j
1 j
1 j g m r
z
fz
gm
h fe =
=
g m r=

1 j C C r
f

1
j
1 j
f

h fe dB
20log10

f z f
C C r =C C
=>
gm gm

f
z

Hence, the lower break frequency or 3dB frequency is f

gm
1
f =
=
2 C C r 2 C C the upper:

gm
1
f z=
=
2 C / g m 2 C

where f z 10 f
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

Using Bode plot concepts, for the range where: f f
h fe =g m r =
f f f z s.t. 1 j f / f z1

For the range where:

We consider the frequency-dependent numerator term to

be 1 and focus on the response of the denominator:
f f f z

h fe

gm r
f
1 j
f

2008 Kenneth R. Laker, update 08Oct12 KRL

f
1 j
f

23

ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

Neglecting numerator term:

And for f / f >>1 (but < f / f z ):

Unity gain bandwidth:

h fe =

g m r
f
1 j
f

f
1 j
f

=
h fe
f
f
f

f
h fe=1 f | f = f =1 f T = f
T

T
f T=
= f
2
2008 Kenneth R. Laker, update 08Oct12 KRL

BJT unity-gain frequency or GBP

24

ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

=100

r =2500

3
C =12 pF C =2 pF g m =4010 S
12

1
10 10
6
=
=
=28.5710 rps
C C r 1222.5
28.57 6
f =
=
10 Hz=4.55 MHz
2 6.28

f T = f =455 MHz

g m 401031012
9
z= =
Hz=2010 rps
C
2
z
f z=
=3.18109 Hz=3180 MHz
2
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Scilab fT Plot
//fT Bode Plot
Beta=100;
KdB= 20*log10(Beta);
fz=3180;
fp=4.55;
f= 1:1:10000;
term1=KdB*sign(f); //Constant array of len(f)
term2=max(0,20*log10(f/fz)); //Zero for f < fz;
term3=min(0,-20*log10(f/fp)); //Zero for f < fp;
BodePlot=term1+term2+term3;
plot(f,BodePlot);

2008 Kenneth R. Laker, update 08Oct12 KRL

26

ESE319 Introduction to Microelectronics

hfe Bode Plot

(dB)

fT
2008 Kenneth R. Laker, update 08Oct12 KRL

27

ESE319 Introduction to Microelectronics

Multisim Simulation
v-pi

Ic

Ib

v-pi
mS

Insert 1 ohm resistors we want to measure a current ratio.

g m j C
Ic
h fe = =
Ib 1
j C C
r
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Simulation Results

Theory:
Low frequency |hfe|

f T = f =455 MHz

Unity Gain frequency about 440 MHz.

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

The Cascode Amplifier

A two transistor amplifier used to obtain simultaneously:

1. Reasonably high input impedance.
2. Reasonable voltage gain.
3. Wide bandwidth.

None of the conventional single transistor designs will satisfy all

of the criteria above.
The cascode amplifier will satisfy all of these criteria.
A cascode is a CE Stage cascaded with a CB Stage.

(Historical Note: the cascode amplifier was a cascade of grounded

cathode and grounded grid vacuum tube stages hence the
name cascode, which has remained in modern terminology.)
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

The Cascode Amplifier

CB Stage

C byp
CE Stage

RRs S

vs

R1

Cin

B1

i C1
i B1 C1

R2

i E1
i B2

B2

R3

RC
Q1

E2

v-out
vO

E1
i C2
C2

Q2

CB Stage

CE Stage

RRs S

i c2
i b2

Q2
i e2

V CC v
s

RB

RE

Q1
i e1

RE

R B =R 2R3

i c1

i b1

i E2
R in1=

vo

RC

v e1 v c2
= =lowr e1
i e1 i c2

ac equivalent circuit

Comments:
1. R1, R2, R3, and RC set the bias levels for both Q1 and Q2.
2. Determine RE for the desired voltage gain.
3. Cin and Cbyp are to act as open circuits at dc and act as short circuits
at all operating frequencies f f min .
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Mid-Band Small Signal Model

CB Stage

C byp
CE Stage

RRs S

vs

R1

Cin

B1

i C1
i B1 C1

R2

i E1
i B2

B2

R3

RC
Q1

V CC

RRs S
vs

i E2

RE

r1

CE
Stage

r2

RB i e2

ggm vv 1

m1 be1

E1

i c2 R in1 =low

C2

i b2
vvbe2
2

vo

C1

vvbe1
1

i e1

B2

Q2
E2

i b1

v-out
vO

E1
i C2
C2

i c1

B1

CB
Stage

g m vv 2

m2 be2

E2

RE

=RR
2R 3
RRB B=R
2
3

2008 Kenneth R. Laker, update 08Oct12 KRL

32

RC

ESE319 Introduction to Microelectronics

Cascode Small Signal Analysis

i c1

B1

CB
Stage

i b1

r1

RRs S
vs

CE
Stage

i b2
vv 2
r be2
RB i e2

ggm vv 1

m1 be1

E1

i c2 R in1 =low

C2

C1

vvbe1
1

i e1

B2

vo

g m vv 2

m2 be2

E2

RE

g m1=g m2=g m
r e1=r e2=r e
r 1=r 2 =r
2008 Kenneth R. Laker, update 08Oct12 KRL

RC

1. Show reduction in Miller effect

2. Evaluate small-signal voltage gain
OBSERVATIONS
a. The emitter current of the CB Stage is
the collector current of the CE Stage. (This
also holds for the dc bias current.)
i e1=i c2
b. The base current of the CB Stage is:
i e1
i c2
i b1=
=
1 1
c. Hence, both stages have about same
collector current i c1ic2 and same gm, re, r.
33

ESE319 Introduction to Microelectronics

Cascode Small Signal Analysis cont.

i b1

RRs S
vs

RB i e2

ggm v 1

m be1

E1 R r
in 1
e1

i c2

C2

i b2
vv 2
r be2

vo

C1

vvbe1
1

i e1

B2

CE
Stage

i c1

B1

CB
Stage

g mvv 2
m be2

E2

RE

RC

The input resistance Rin1 to the CB Stage is

the small-signal re1 for the CB Stage, i.e.
i e1
i c2
i b1=
=
1 1
The CE output voltage, the voltage drop
from Q2 collector to ground, is:
r
r
v c2=v e1 =r i b1=
i c2=
i e1
1
1

Therefore, the CB Stage input resistance is:

r
v e1
Rin1=
=
=r e1
i e1 1

v c2
R in1
re
r
AvCE Stage =
= 1 => C eq =1 e C 2 C
vs
RE
RE
RE
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Small Signal Analysis - cont.

i c1
i b1

v be1

i e1

RS
i b2

vvbe2be2

gmmvvbe1
be1
i c2 Rin 1r e1
g mvv be2
m be2

i e2

i c1ie1 =i c2i e2

Now, find the CE collector current in terms of

the input voltage vs:
Recall i c1ic2
vs
i b2
R SR B r 1 R E
vs
vs
i c2 = ib2

R SR B r 1 R E 1 R E

for bias insensitivity: 1 R E R SR B r

v ss
i C2
RE

v o=i c2 RC

v o R C
Av = =
vs
RE

OBSERVATIONS:
1. Voltage gain Av is about the same as a stand-along CE Amplifier.
2. HF cutoff is much higher then a CE Amplifier due to the reduced Ceq.
2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Biasing
o.c.
CB

RS

C in

o.c.

I1

IC1

Q1
IE1

vO

R in1 =low

IC2

Q2
IE2

1
2 I E2=I C2= I E1= I C1 I C1 I E2
1
2008 Kenneth R. Laker, update 08Oct12 KRL

1. Choose IE1 make it relatively large to

reduce R in1=r e =V T / I E1 to push out HF
break frequencies.
2. Choose RC for suitable voltage swing
VC1 and RE for desired gain.
3. Choose bias resistor string such that
its current I1 is about 0.1 of the collector
current IC1.
4. Given RE, IE2 and VBE2 = 0.7 V calc. R3.
5. Need to also determine R1 & R2.
36

ESE319 Introduction to Microelectronics

Cascode Biasing - cont.

II11
VB1
VB2

Q1

vO
Rin 1r e1

Q2

VC2

Since the CE-Stage gain is very small:

a. The collector swing of Q2 will be small.
b. The Q2 collector bias VC2= VB1 - 0.7 V.
6. Set V B1V B2 =1V V CE2 =1 V
This will limit VCB2 V CB2 =V CE2 V BE2=0.3V
which will keep Q2 forward active.

V CE2=V C2 V R e =V C2V B2 0.7V

.=V B10.7V V B2 0.7 V
.=V B1V B2

2008 Kenneth R. Laker, update 08Oct12 KRL

7. Next determine R2. Its drop VR2 = 1 V

V B1V B2
with the known current.
R2=
I1

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ESE319 Introduction to Microelectronics

Cascode Biasing - cont.

V B1V B2 1 V
R2=
=
I1
I1
V B1

Q1

Rin 1r e1

Q2

8. Then calculate R3.

V B2
R 3=
I1

where V B2 =0.7V I E R E
V CC
Note: R 1R 2 R 3=
I1
9. Then calculate R1.
V CC
R 1=
R 2R 3
0.1 I C

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Bias Summary

SPECIFIED: Av, VCC, VC1 (CB collector voltage);
SPECIFIED: IE (or IC) directly or indirectly through BW.
DETERMINE: RC, RE, R1, R2 and R3.
V C1
STEP1: R C =
SET: V B1V B2 =1V V CE2 =1V
IC
V B1

Q1

Rin 1r e1

Q2

I C2= I E1 I C1 I E2 =I C
2008 Kenneth R. Laker, update 08Oct12 KRL

RE=

RC

A v

V B1V B2
1V
STEP2: R 2 =
=
I1
0.1 I C
V B2 0.7 V I E R E
STEP3: R 3=
=
I1
0.1 I C
V CC V CC
R 1R 2 R 3=
=
I 1 0.1 I C
V
STEP4: R 1= CC R 2R 3
0.1 I C
39

ESE319 Introduction to Microelectronics

Cascode Bias Example

R1

VCC-ICRE-1.7

V C1

RC I R
C C
Q1

Q1

VVCE1
=V
=ICCC
RCI
1I
R V CE2 I C R E
CR
CE1
C CE

1.0
Q2

=12 V

Q2 V =1
CE2
ICRE+0.7

Cascode Amp
2008 Kenneth R. Laker, update 08Oct12 KRL

RE

=12 V

ICRE

I E2 I C2= I E1 I C1 I C1 I E2

Typical Bias Conditions

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ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

1. Choose IE1 to set re.
Q1

Try IE1 = 5 mA => r e =0.025 V / I E =5 .

V CE1=V CC I C RC 1 I C R E

Q2

2. Set desired gain magnitude. For example

if AV = -10, then RC/RE = 10.
3. Since the CE stage gain is very small,
VCE2 can be small, i.e. VCE2 = VB1 VB2 = 1 V.

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

Specs:
V CC =12 V V C1=7 V I C =5 mA
=100
Q1

RC
Av= R =10
E

V CE1=V CC I C RC 1 I C R E

Q2

2008 Kenneth R. Laker, update 08Oct12 KRL

Determine RC for VC1 = 7V .

V CC V C1
5V
RC =
=
=1000
3
3
510 A 510 A
RC RC
RE=
= =100
Av 10

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ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

I1

V CC =12
R1
RC I R
C C
VCC-ICRE-1.7
Q1

Make current through the string of bias

resistors I1 = 0.1 IC = 0.5 mA.

=I RCI
1ICCREC 1 I C R E
VVCE1
CE1=VC CC

R2 1.0
Q2 VCE2=1
ICRE+0.7

R3

RC =1 k I C =5 mA. R E =100

RE I R
C E

=12V

V CC
12
R1 R 2 R3=
=
=24 k
4
I 1 510

Calculate the bias voltages (base side of Q1, Q2):

V R1=V CC I C R E 1.7V =12 V 0.5V 1.7V =9.8 V
V R2=V B1V B2=1V
V R3=V B2 =I C R E 0.7=51031000.7=1.2 V

2008 Kenneth R. Laker, update 08Oct12 KRL

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ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

V B2 =5104 R3=1.2V
CB

RRSS

C in

V B1
V B2

R3 =2.4 k

Q1

V B1V B2=5104 R 2=1.0V

Q2

R 2=2 k
Recall: R1 R 2 R3=24 k
R1 =240002.4002000=19.6 k

V CC =12 , RC =1 k , V B2 =1.2 V ,
I C =5 mA , R E =100 , V B1V B2=1.0V
2008 Kenneth R. Laker, update 08Oct12 KRL

44

ESE319 Introduction to Microelectronics

Completed Design

=100

f H=

r e =5 I C =5 mA

V C1=7 V
RC
Av= R =10
E

CB

V B1

RRSS C in

V B2

Q1

Q2

1
2 C tot R'S

re
C tot =C 1 C
RE
.=C 1.05 C

If C = 12 pF
C = 2 pF

R1 =19.6 k
R 2=2 k
R3 =2.4 k

C tot =14.1 pF
f Hcascode=225.8 MHz

RC =1 k
R E =100

For CE with |Av| = 10

NOTE: R B=R 2R 3=1.09 k R E =10 k

2008 Kenneth R. Laker, update 08Oct12 KRL

f HCE =94 MHz

45