Stw24nm65n-Sti24nm65n-Stf24nm65n STB24NM65N - STP24NM65N

STW24NM65N-STI24NM65N-STF24NM65N
STB24NM65N - STP24NM65N
N-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAK
I2PAK - TO-247 second generation MDmesh Power MOSFET
Features
Type
VDSS
(@TJmax)
RDS(on) max
ID
STB24NM65N
710 V
< 0.19
19 A
STI24NM65N
710 V
< 0.19
19 A
STF24NM65N
710 V
< 0.19
19 A(1)
STP24NM65N
710 V
< 0.19
19 A
STW24NM65N
710 V
< 0.19
19 A
3
12
3
1
IPAK
TO-220
3
1
DPAK
3
1. Limited only by maximum temperature allowed
TO-220FP
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

Figure 1.
TO-247
Internal schematic diagram
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh technology. This
revolutionary Power MOSFET associates a new
vertical structure to the companys strip layout to
yield one of the worlds lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB24NM65N
24NM65N
DPAK
Tape and reel
STI24NM65N
24NM65N
IPAK
Tube
STF24NM65N
24NM65N
TO-220FP
Tube
STP24NM65N
24NM65N
TO-220
Tube
STW24NM65N
24NM65N
TO-247
Tube
February 2008
Rev 1
1/19
www.st.com
19
Contents
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/19
................................................ 9
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings

Value
Symbol
Parameter
TO-220/IPAK
TO-247/DPAK
Unit
TO-220FP
VDS
Drain-source voltage (VGS=0)
650
VGS
Gate-source voltage
25
ID
Drain current (continuous) at TC = 25 C
19
19(1)
ID
Drain current (continuous) at TC = 100 C
12
12 (1)
IDM (2)
Drain current (pulsed)
76
76(1)
PTOT
Total dissipation at TC = 25 C
160
40
dv/dt (3)
Peak diode recovery voltage slope
15
VISO
Insulation withstand voltage (RMS) from all

three leads to external heat sink
(t=1 s;TC=25 C)
Tstg
Storage temperature
TJ
--
Max. operating junction temperature
V/ns
2500
-55 to 150
150
1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area
3. ISD 19 A, di/dt 400 A/s, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionamb max
Rthj-pcb
Thermal resistance junctionpcb max
Tl
Maximum lead temperature

for soldering purposes
TO-220 IPAK TO-247 DPAK TO-220FP

0.78
62.5
--
--
Unit
3.1
C/W
50
--
62.5
C/W
--
30
--
C/W
300
3/19
Electrical ratings
Table 4.
4/19
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)
EAS
Single pulse avalanche energy

(starting TJ=25 C, ID=IAS, VDD= 50 V)
500
mJ
Electrical characteristics
(TCASE=25 C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
dv/dt (1)
Drain source voltage slope
VDD= 520 V, ID=19 A,

VGS=10 V
IDSS
Zero gate voltage

drain current (VGS = 0)
VDS = max rating

VDS = max rating, @125 C
1
100
A
A
IGSS
Gate-body leakage
current (VDS = 0)
VGS = 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 A
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 9.5 A
0.16
0.19
Typ.
Max.
Unit
650
V
35
V/ns
1. Characteristic value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
gfs (1)
Forward transconductance
Ciss
Coss
Crss
Test conditions
Min.
VDS= 15 V, ID = 9.5 A
14
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
2500
120
10
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
310
pF
Qg
Qgs
Qgd
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 19 A,
VGS = 10 V,
(see Figure 19)
70
10
40
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC bias = 0

Test signal level = 20 mV
open drain
2.5
Coss eq(2)
S
pF
pF
pF
1. Pulsed: pulse duration = 300s, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/19
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Typ
Max
25
10
80
20
VDD =325 V, ID = 9.5 A

RG = 4.7 VGS = 10 V
(see Figure 18)
Unit
ns
ns
ns
ns
Source drain diode

Parameter
Test conditions
Min
Typ
Source-drain current
Source-drain current (pulsed)
Max
Unit
19
76
A
A
1.3
Forward on voltage
ISD = 19 A, VGS = 0
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/s

VDD = 100 V
(see Figure 20)
460
7
30
ns
C
A
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/s

VDD = 100 V, TJ = 150 C
(see Figure 20)
620
9
29
ns
C
A
1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300s, duty cycle 1.5%
6/19
Min
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 D2PAK - I2PAK
Figure 3.
Thermal impedance for TO-220 D2PAK - I2PAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
7/19
Figure 8.
Output characteristics
Figure 10. Transconductance
Figure 9.
Transfer characteristics
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
8/19
Figure 14. Normalized gate threshold voltage

vs temperature
Figure 15. Normalized on resistance vs

temperature
Figure 16. Source-drain diode forward

characteristics
Figure 17. Normalized BVDSS vs temperature
9/19
Test circuit
Test circuit
Figure 18. Switching times test circuit for

resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load

Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
10/19
Figure 23. Switching time waveform
Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/19
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
P
Q
12/19
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
TO-220FP mechanical data

mm.
DIM.
Min.
inch
Typ.
Max.
Min.
Typ.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9.3
0.354
0.366
3.2
0.118
0.126
L7
L3
L6
F2
G1
F1
L7
L2
L5
1 23
L4
13/19
TO-262 mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
14/19
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
Typ
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
Max
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
DPAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
0.4
0
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8
0079457_M
15/19
TO-247 Mechanical data

mm.
Dim.
A
Min.
4.85
A1
2.20
2.60
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
0.40
0.80
19.85
20.15
15.45
15.75
Max.
5.15
5.45
14.20
14.80
L1
3.70
4.30
L2
18.50
3.55
3.65
4.50
5.50
16/19
Typ
5.50
Packaging mechanical data
Packaging mechanical data

D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
12.8
20.2
24.4
100
TAPE MECHANICAL DATA

DIM.
mm
MIN.
inch
MAX.
MIN.
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
50
1.574
0.25
0.35 0.0098 0.0137
23.7
24.3
0.933 0.956
* on sales type
17/19
Revision history
Revision history
Table 9.
18/19
Document revision history
Date
Revision
14-Feb-2008
Changes
First release
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19/19

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1. Limited only by maximum temperature allowed

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Internal schematic diagram

Tape and reel

Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Absolute maximum ratings

Drain-source voltage (VGS=0)

Drain current (continuous) at TC = 25 C

Drain current (continuous) at TC = 100 C

Drain current (pulsed)

Peak diode recovery voltage slope

Insulation withstand voltage (RMS) from all

Max. operating junction temperature

1. Limited only by maximum temperature allowed

Thermal resistance junctioncase max

Thermal resistance junctionamb max

Thermal resistance junctionpcb max

Maximum lead temperature

TO-220 IPAK TO-247 DPAK TO-220FP

Avalanche current, repetitive or not-repetitive

Single pulse avalanche energy

Drain source voltage slope

VDD= 520 V, ID=19 A,

Zero gate voltage

VDS = max rating

Gate threshold voltage

VDS = VGS, ID = 250 A

1. Characteristic value at turn off on inductive load

VGS = 0, VDS = 0 to 520 V

Total gate charge

Gate input resistance

f=1 MHz gate DC bias = 0

1. Pulsed: pulse duration = 300s, duty cycle 1.5%

VDD =325 V, ID = 9.5 A

Source drain diode

Reverse recovery time

ISD = 19 A, di/dt = 100 A/s

Reverse recovery time

ISD = 19 A, di/dt = 100 A/s

1. Pulse width limited by safe operating area

Electrical characteristics (curves)

Safe operating area for TO-220 D2PAK - I2PAK

Thermal impedance for TO-220 D2PAK - I2PAK

Safe operating area for TO-220FP

Thermal impedance for TO-220FP

Safe operating area for TO-247

Thermal impedance for TO-247

Figure 10. Transconductance

Figure 11. Static drain-source on resistance

Figure 14. Normalized gate threshold voltage

Figure 15. Normalized on resistance vs

Figure 16. Source-drain diode forward

Figure 17. Normalized BVDSS vs temperature

Figure 18. Switching times test circuit for

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform