Ngtb75n65fl2wa D

NGTB75N65FL2WAG
IGBT - Field Stop II / 4 Lead

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO2474L package that provides significant
reduction in Eon Losses compared to standard TO2473L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast copackaged free wheeling diode with
a low forward voltage.
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75 A, 650 V
VCEsat = 1.70 V
Eon = 0.61 mJ
Features
Extremely Efficient Trench with Field Stop Technology

TJmax = 175C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO2474L for Minimal Eon Losses
Optimized for High Speed Switching
These are PbFree Devices
G
E1
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
VCES
650
Collector current
@ TC = 25C
@ TC = 100C
IC
Diode Forward Current

@ TC = 25C
@ TC = 100C
IF
MARKING DIAGRAM
A
200
75
IFM
200
Pulsed collector current, Tpulse

limited by TJmax
ICM
200
Gateemitter voltage
VGE
$20
V
V
$30
Transient gateemitter voltage

(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25C
@ TC = 100C
PD
Operating junction temperature range
TJ
55 to +175
Storage temperature range
Tstg
55 to +175
Lead temperature for soldering, 1/8

from case for 5 seconds
TSLD
260
W
536
268
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
May, 2016 Rev. 0
TO247
CASE 340AR
4 LEAD
E
E1 G
A
200
75
Diode Pulsed Current

TPULSE Limited by TJ Max
Semiconductor Components Industries, LLC, 2016
75N65FL2
AYWWG
75N65FL2 = Specific Device Code

A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB75N65FL2WAG
TO247
(PbFree)
30 Units / Rail
Publication Order Number:

NGTB75N65FL2WA/D
NGTB75N65FL2WAG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junctiontocase, for IGBT
Rating
RqJC
0.28
C/W
Thermal resistance junctiontocase, for Diode
RqJC
0.62
C/W
Thermal resistance junctiontoambient
RqJA
40
C/W
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 175C
VCEsat
1.50
1.70
2.30
2.00
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
Collectoremitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
Collectoremitter cutoff current, gate

emitter shortcircuited
VGE = 0 V, VCE = 650 V

VGE = 0 V, VCE = 650 V, TJ = 175C
ICES
7.0
0.3
mA
Gate leakage current, collectoremitter

shortcircuited
VGE = 20 V , VCE = 0 V
IGES
200
nA
Cies
7200
pF
Coes
300
Cres
200
Gateemitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance

Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 75 A, VGE = 15 V
Gate to collector charge
Qg
310
Qge
60
Qgc
160
td(on)
23
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turnon delay time
Rise time
tr
50
td(off)
157
tf
55
Eon
0.61
Eoff
1.2
Total switching loss
Ets
1.81
Turnon delay time
td(on)
28
tr
50
td(off)
172
tf
90
Eon
0.85
Turnoff switching loss
Eoff
1.8
Total switching loss
Ets
2.65
VF
1.50
2.30
2.50
2.90
Turnoff delay time

Fall time
Turnon switching loss
TJ = 25C
VCC = 400 V, IC = 75 A
Rg = 10 W
VGE = 15 V
Turnoff switching loss
Rise time
Turnoff delay time
Fall time
Turnon switching loss
TJ = 175C
VCC = 400 V, IC = 75 A
Rg = 10 W
VGE = 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 75 A
VGE = 0 V, IF = 75 A, TJ = 175C
TJ = 25C
IF = 75 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175C
IF = 75 A, VR = 200 V
diF/dt = 200 A/ms
trr
90
ns
Qrr
0.40
mC
Irrm
7.0
trr
173
ns
Qrr
1.47
mC
Irrm
13
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
200
VGE =
20 V 15 V
180
13 V
IC, COLLECTOR CURRENT (A)
200
160
140
TJ = 25C
120
11 V
100
80
10 V
60
9V
40
7V
20
8V
0
1
140
TJ = 150C
120
100
11 V
80
10 V
60
9V
40
7V
8V
20
200
TJ = 55C
11 V
120
100
80
10 V
60
40
9V
20
7 V and 8 V
0
1
VGE = 20 V 15 V
180
160
13 V
140
TJ = 175C
120
11 V
100
80
10 V
60
9V
40
7V
8V
20
0
0
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics

200
180
160
140
120
100
80
60
40
TJ = 175C
20
TJ = 25C
0
2
10
12
14
140
160
VGE =
20 V 13 V
180
200
13 V
160
0
0
VGE = 20 V 15 V
180
16
2.4
2.2
IC = 75 A
2.0
IC = 50 A
1.8
1.6
1.4
IC = 25 A
1.2
1.0
75 50 25
25
50
75 100 125 150 175 200
VGE, GATEEMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
NGTB75N65FL2WAG
100
100K
Cies
10K
1K
Coes
Cres
100
TJ = 25C
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
TJ = 25C
TJ = 175C
80
70
60
50
40
30
20
10
0
10
10
30
20
40
50
60
70
80
90
100
1.0
1.5
2.0
2.5
3.0
3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
1.8
14
1.6
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 75 A
4
2
VCE = 400 V
VGE = 15 V
IC = 75 A
Rg = 10 W
1.4
4.0
Eoff
1.2
1.0
0.8
Eon
0.6
0.4
0
50
100
150
200
250
300
350
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0.5
SWITCHING LOSS (mJ)
VGE, GATEEMITTER VOLTAGE (V)
td(off)
100
tf
tr
td(on)
10
VCE = 400 V
VGE = 15 V
IC = 75 A
Rg = 10 W
1
0
20
40
VCE = 400 V
VGE = 15 V
TJ = 175C
Rg = 10 W
Eoff
4
3
Eon
2
1
0
60
80
100 120 140 160 180 200
10
30
50
70
90
110
130
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
150
170
NGTB75N65FL2WAG
12
td(off)
tf
100
tr
td(on)
10
VCE = 400 V
VGE = 15 V
TJ = 175C
Rg = 10 W
1
10
30
6
4
50
70
90
110
130
150
170
10
20
30
40
50
60
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
70
3.0
SWITCHING LOSS (mJ)
tf
100
tr
VCE = 400 V
VGE = 15 V
TJ = 175C
IC = 75 A
td(on)
10
VGE = 15 V
TJ = 175C
IC = 75 A
Rg = 10 W
2.5
Eoff
2.0
Eon
1.5
1.0
0.5
0
10
20
30
40
50
60
150 200
70
250
300
350
400
450
500
550 600
RG, GATE RESISTOR (W)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE

1000
VGE = 15 V
TJ = 175C
IC = 75 A
Rg = 10 W
SWITCHING TIME (ns)
Eoff
td(off)
SWITCHING TIME (ns)
Eon
1000
1000
VCE = 400 V
VGE = 15 V
TJ = 175C
IC = 75 A
10
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1000
td(off)
tf
100
tr
td(on)
10
100
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25C
Curves must be derated
linearly with increase
in temperature
1 ms
dc operation
0.1
150 200
250
300
350
400
450
500
550 600
10
100
1K
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10K
NGTB75N65FL2WAG
150
trr, REVERSE RECOVERY TIME (ns)
1000
100
10
VGE = 15 V, TC = 175C
1
130
TJ = 175C, IF = 75 A
110
90
TJ = 25C, IF = 75 A
70
50
10
100
1K
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt

Irm, REVERSE RECOVERY CURRENT (A)
3.0
VR = 400 V
2.5
2.0
TJ = 175C, IF = 75 A
1.5
TJ = 25C, IF = 75 A
1.0
0.5
0
100
300
500
700
900
1300
1100
VR = 400 V
TJ = 175C, IF = 75 A
40
30
TJ = 25C, IF = 75 A
20
10
0
100
300
500
700
900
1100
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.00
2.75
2.50
IF = 75 A
2.25
IF = 50 A
2.00
1.75
IF = 25 A
1.50
1.25
1.00
75 50 25
25
75 100 125 150 175 200
50
Figure 23. VF vs. TJ
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6
1300
50
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V
1300
NGTB75N65FL2WAG
225
Ramp, TC = 110C
200
Square, TC = 110C
175
Ipk (A)
150
Ramp, TC = 80C
125
Square, TC = 80C
100
75
50
25
0
0.01
0.1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUAREWAVE PEAK (C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.000001
0.00001
Ri (C/W) Ci (J/W)
0.0301
0.0033
0.0184
0.0172
0.0255
0.0392
0.0536
0.0590
0.1129
0.0886
0.0409
0.7735
Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
Case
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance

R(t), SQUAREWAVE PEAK (C/W)
RqJC = 0.62
50% Duty Cycle
20%
0.1 10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
Case
0.01
Single Pulse
Ri (C/W) Ci (J/W)
0.000125
0.000951
0.002753
0.003765
0.006647
0.009699
0.051480
0.152673
0.234748
0.654533
0.007994
0.010512
0.011485
0.026558
0.047571
0.103104
0.061427
0.065499
0.134709
0.152781
Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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7
0.1
NGTB75N65FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB75N65FL2WAG
Figure 29. Definition of Turn Off Waveform
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9
NGTB75N65FL2WAG
PACKAGE DIMENSIONS
TO247 4LEAD
CASE 340AR
ISSUE O
NOTE 3
A
P
B
0.635
B A
SEATING
PLANE
E1
NOTE 7
S
E2
D
D1
NOTE 3
NOTE 6
1
2 3 4
L1
DIM
A
A1
b
b2
c
D
D1
E
E1
E2
e
L
L1
P
P1
Q
S
NOTE 4
4X
b2
2X
4X
b
0.25
A1
NOTE 5
M
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN
SIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.
5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL.
P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5 TO
P1 7. DIAMETER
THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20.
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.10
1.30
1.30
1.50
0.50
0.70
20.80
21.10
16.25
17.65
15.75
16.13
13.06
13.46
4.32
4.83
2.54 BSC
19.90
20.30
4.00
4.40
3.50
3.70
7.00
7.40
5.59
6.20
6.15 BSC
ON Semiconductor and the

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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each
customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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NGTB75N65FL2WAG

IGBT - Field Stop II / 4 Lead

Extremely Efficient Trench with Field Stop Technology

Diode Forward Current

Pulsed collector current, Tpulse

Transient gateemitter voltage

Operating junction temperature range

Storage temperature range

Lead temperature for soldering, 1/8

May, 2016 Rev. 0

Diode Pulsed Current

Semiconductor Components Industries, LLC, 2016

75N65FL2 = Specific Device Code

Publication Order Number:

Thermal resistance junctiontocase, for IGBT

Thermal resistance junctiontocase, for Diode

Thermal resistance junctiontoambient

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

VGE = VCE, IC = 350 mA

Collectoremitter cutoff current, gate

VGE = 0 V, VCE = 650 V

Gate leakage current, collectoremitter

Gateemitter threshold voltage

VCE = 20 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 480 V, IC = 75 A, VGE = 15 V

Gate to collector charge

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Total switching loss

Turnon delay time

Turnoff switching loss

Total switching loss

Turnoff delay time

Turnoff switching loss

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 3. Output Characteristics

Figure 4. Output Characteristics

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 2. Output Characteristics

Figure 1. Output Characteristics

VCE, COLLECTOREMITTER VOLTAGE (V)

VCE, COLLECTOREMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

75 100 125 150 175 200

VGE, GATEEMITTER VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (C)

Figure 5. Typical Transfer Characteristics

Figure 6. VCE(sat) vs. TJ

VF, FORWARD VOLTAGE (V)

Figure 7. Typical Capacitance

Figure 8. Diode Forward Characteristics

100 120 140 160 180 200

QG, GATE CHARGE (nC)

TJ, JUNCTION TEMPERATURE (C)

Figure 9. Typical Gate Charge

Figure 10. Switching Loss vs. Temperature

SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

VCE, COLLECTOREMITTER VOLTAGE (V)

SWITCHING LOSS (mJ)

VGE, GATEEMITTER VOLTAGE (V)