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1. Introduction
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Fig. 1. Transfer characteristics at VD 5 V in a-IGZO TFTs with (a) Mo, (b) Al, and (c) Cu electrodes. The transfer characteristics of as-deposited and
air-annealed TFTs were measured in a vacuum chamber.
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Fig. 2. Cross-sectional, HR-TEM images of the interfacial micro-structures between a-IGZO and the metal electrode: (a) Mo, (b) Al, and (c) Cu. The
a-IGZO lm on the Al electrode was not annealed, whereas the a-IGZO lms on Mo and Cu lms were annealed at 250 C for 1 h.
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Fig. 3. (Color online) TOF-SIMS depth proles for the analysis of the chemical reaction at the metal/a-IGZO/SiO2 interface before and after airannealing. (a, b) Mo/a-IGZO/SiO2 lm for the chemical analysis of the Mo/a-IGZO interface. (c, d) Mo/Cu/a-IGZO/SiO2 lm for the chemical analysis of
the Cu/a-IGZO interface.
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4. Conclusions
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21) H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono: Thin Solid Films 516
(2008) 1516.
A 13 (1995) 1100.
25) D. Y. Ku, I. H. Kim, I. Lee, K. S. Lee, T. S. Lee, J. H. Jeong, B. Cheong,
263508.
27) P. Gorrn, P. Holzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P.
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