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SWITCHMODE Series
NPN Silicon Power Transistors
These devices are designed for highvoltage, highspeed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
MJE13005 *
*ON Semiconductor Preferred Device
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS
SPECIFICATION FEATURES:
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100C
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A09
TO220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO(sus)
400
Vdc
CollectorEmitter Voltage
VCEV
700
Vdc
VEBO
Vdc
IC
ICM
4
8
Adc
IB
IBM
2
4
Adc
IE
IEM
6
12
Adc
PD
2
16
Watts
mW/C
PD
75
600
Watts
mW/C
TJ, Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Characteristic
RJA
62.5
C/W
RJC
1.67
C/W
TL
275
C
MJE13005
Symbol
Min
Typ
Max
Unit
VCEO(sus)
400
Vdc
1
5
*OFF CHARACTERISTICS
ICEV
IEBO
mAdc
mAdc
SECOND BREAKDOWN
IS/b
See Figure 11
RBSOA
See Figure 12
*ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
hFE
10
8
60
40
0.5
0.6
1
1
1.2
1.6
1.5
fT
MHz
Cob
65
pF
td
0.025
0.1
tr
0.3
0.7
ts
1.7
tf
0.4
0.9
tsv
0.9
tc
0.32
0.9
tfi
0.16
VCE(sat)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Resistive Load (Table 2)
Delay Time
Rise Time
Storage Time
Fall Time
Vd
(IC = 2 A
A, Vclamp = 300 Vdc,
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100
100C)
C)
Fall Time
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2
MJE13005
100
70
TJ = 150C
50
25C
30
20
-55C
10
VCE = 2 V
VCE = 5 V
7
5
0.04 0.06
0.1
0.4 0.6
0.2
1
IC, COLLECTOR CURRENT (AMP)
2
TJ = 25C
1.6
IC = 1 A
0.9
TJ = -55C
25C
0.7
25C
0.5
150C
0.3
0.04 0.06
0.1
0.2
0.4
0.6
0.4
0
0.03
0.55
IC/IB = 4
0.45
TJ = -55C
0.35
25C
0.25
0.15
150C
0.05
0.04 0.06
0.1
0.2
0.4
0.6
2k
C, CAPACITANCE (pF)
TJ = 150C
125C
100C
75C
50C
25C
0.1
-0.4
0.2 0.3
0.5 0.7
IB, BASE CURRENT (AMP)
1k
0.1
VCE = 250 V
10
0.05
10 k
100
4A
1.3
VBE(sat) @ IC/IB = 4
VBE(on) @ VCE = 2 V
3A
0.8
1.1
2A
1.2
REVERSE
300
200
100
70
50
30
FORWARD
-0.2
+0.2
+0.4
0
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Cib
1k
700
500
20
0.3
+0.6
Cob
0.5
10
30
1 3 5
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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3
100
300
MJE13005
ICPK
Vclamp
90% Vclamp
IC
90% IC
trv
tsv
tfi
tti
tc
VCE
IB
10% Vclamp
90% IB1
10%
ICPK
2% IC
TIME
TC
C
tsv
ns
trv
ns
tfi
ns
tti
ns
tc
ns
25
100
600
900
70
110
100
240
80
130
180
320
25
100
650
950
60
100
140
330
60
100
200
350
25
100
550
850
70
110
160
350
100
160
220
390
10
VCC = 125 V
IC/IB = 5
TJ = 25C
0.5
0.2
t, TIME (s)
t, TIME (s)
tr
0.1
0.05
td @ VBE(off) = 5 V
0.01
0.04
2
1
0.5
0.3
0.02
VCC = 125 V
IC/IB = 5
TJ = 25C
ts
tf
0.2
0.1
0.2
0.4
0.1
0.04
0.1
0.2
0.5
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MJE13005
Table 2. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
TEST CIRCUITS
0.001 F
PW
2N222
2
1k
68
+125 V
MR826*
1k
T.U.T.
47 100
1/2 W
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
5.1 k
IB
2N2905
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
Vclamp
IC
RB
1k
+5 V
1N493
3
0.02 F 270
CIRCUIT
VALUES
MJE210
33 1N4933
5V
VCC
RB
TEST WAVEFORMS
IC(pk)
51
D1
VCE
-4.0 V
-VBE(off)
VCC = 125 V
RC = 62
D1 = 1N5820 or Equiv.
RB = 22
VCC = 20 V
Vclamp = 300 Vdc
t1
VCE
tf
VCE or
Vclamp
TIME
1
0.7
0.5
-8 V
Lcoil (ICpk)
Vclamp
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
0.1
0.1
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
P(pk)
0.05
0.02
0.01
0.01
Test Equipment
ScopeTektronics
475 or Equivalent
0.2
0.2
0.03
25 s
D = 0.5
0.3
0.07
0.05
Lcoil (ICpk)
t1
VCC
t2
t2
+10 V
t1 ADJUSTED TO
OBTAIN IC
SCOPE
MJE200
tf CLAMPED
tf UNCLAMPED t2
RC
*SELECTED FOR 1 kV
OUTPUT WAVEFORMS
IC
TUT
0.2
0.5
2
5
t, TIME (ms)
10
20
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5
t1
t2
100
200
500
1k
MJE13005
SAFE OPERATING AREA INFORMATION
The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.
4
5
2
10
500 s
5 ms
dc
1
0.5
1 ms
0.2
0.1
0.05
0.02
0.01
MJE13005
5
10
20
30
50
70 100
200 300
VBE(off) = 9 V
1
MJE13005
0
500
400
TC 100C
IB1 = 2.0 A
100
200
300
400
500
600
5V
3V
1.5 V
700
800
FORWARD BIAS
REVERSE BIAS
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
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160
MJE13005
PACKAGE DIMENSIONS
TO220AB
CASE 221A09
ISSUE AA
T
B
SEATING
PLANE
F
T
Q
1 2 3
H
K
Z
L
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MJE13005
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MJE13005/D