ON Semiconductor

PNP

High-Current Complementary
Silicon Transistors

MJ11015

. . . for use as output devices in complementary general purpose

amplifier applications.

MJ11016 *

NPN

MJ11012

High DC Current Gain

hFE = 1000 (Min) @ IC 20 Adc

Monolithic Construction with Builtin Base Emitter Shunt
Resistor
Junction Temperature to +200
C

*ON Semiconductor Preferred Device

30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60120 VOLTS
200 WATTS

MAXIMUM RATINGS

Rating

CollectorEmitter Voltage

Symbol

MJ11012

MJ11015
MJ11016

Unit

VCEO

60

120

Vdc

CollectorBase Voltage

VCB

60

120

Vdc

EmitterBase Voltage

VEB

Vdc

Collector Current

IC

30

Adc

Base Current

IB

Adc

Total Device Dissipation @TC = 25
C

Derate above 25
C @ TC = 100
C

PD

200
1.15

Watts
W/
C

TJ, Tstg

55 to +200

C

Operating Storage Junction

Temperature Range

CASE 107
TO204AA
(TO3)

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

RJC

0.87

C/W

TL

275

C

COLLECTOR

NPN
MJ11012
MJ11016

Thermal Resistance, Junction to Case

Maximum Lead Temperature for

Soldering Purposes for
10 Seconds.
PNP
MJ11015

BASE

COLLECTOR

BASE

8.0 k

40

8.0 k

EMITTER

40

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 4

Publication Order Number:

MJ11012/D

MJ11015 MJ11012 MJ11016

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted.)

Characteristics

Symbol

Min

Max

60
120

1
1
5
5

Unit

OFF CHARACTERISTICS

CollectorEmitter Breakdown Voltage(1)

(IC = 100 mAdc, IB = 0)

CollectorEmitter Leakage Current

(VCE = 60 Vdc, RBE = 1k ohm)
(VCE = 120 Vdc, RBE = 1k ohm)
(VCE = 60 Vdc, RBE = 1k ohm, TC = 150
C)
(VCE = 120 Vdc, RBE = 1k ohm, TC = 150
C)

V(BR)CEO

MJ11012
MJ11015, MJ11016

Vdc

ICER

MJ11012
MJ11015, MJ11016
MJ11012
MJ11015, MJ11016

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

mAdc

CollectorEmitter Leakage Current

(VCE = 50 Vdc, IB = 0)

ICEO

mAdc

1000
200

3
4

3.5
5

ON CHARACTERISTICS(1)

DC Current Gain
(IC = 20 Adc,VCE = 5 Vdc)
(IC = 30 Adc, VCE = 5 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)
(IC = 30 Adc, IB = 300 mAdc)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 20 A, IB = 200 mAdc)
(IC = 30 A, IB = 300 mAdc)

VBE(sat)

Vdc

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)

hfe

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.

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2

MHz

hFE, DC CURRENT GAIN

30 k
20 k

PNP MJ11015
NPN MJ11012, MJ11016

10 k
7k
5k
3k
2k

700
500

VCE = 5 Vdc
TJ = 25C

300
0.3

0.5 0.7

hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED

MJ11015 MJ11012 MJ11016

2
1
0.5
0.2
0.1
0.05
PNP MJ11015
NPN MJ11012, MJ11016

0.02
0.01

VCE = 3 Vdc
IC = 10 mAdc
TJ = 25C

0.005

5 7 10
1
2
3
IC, COLLECTOR CURRENT (AMP)

20

30

10

20

Figure 2. DC Current Gain (1)

TJ = 25C
IC/IB = 100

VBE(sat)
VCE(sat)

1
0
0.1

50
IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

0.2

0.5

500 700 1.0 k

Figure 3. SmallSignal Current Gain

PNP MJ11015
NPN MJ11012, MJ11016

50 70 100
200 300
f, FREQUENCY (kHz)

30

10

20

50

100

20
10
5
2
1
0.5
0.2
0.1
0.05

BONDING WIRE LIMITATION

THERMAL LIMITATION @ TC = 25C
SECOND BREAKDOWN LIMITATION
MJ11012

0.02
0.01

MJ11015, MJ11016
2

IC, COLLECTOR CURRENT (AMP)

10

20

30

50

70 100

200

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 4. On Voltages (1)

Figure 5. Active Region DC Safe Operating Area

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the
limitations imposed by secondary breakdown.

There are two limitations on the power handling ability of

a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.

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MJ11015 MJ11012 MJ11016

PACKAGE DIMENSIONS

CASE 107
TO204AA (TO3)
ISSUE Z

A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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MJ11012/D

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