Documente Academic
Documente Profesional
Documente Cultură
LESSON PLAN
NAME OF THE FACULTY
: V.DEEPA
DEPARTMENT
: ELECTRONICS AND COMMUNICATION
SUBJECT CODE & SUBJECT
: EC6201- ELECTRONICS DEVICES
SEMESTER & BRANCH
: II& ECE A &B Sec
NUMBER OF PERIODS GIVEN IN THE SYLLABUS : 45
Text & Reference Books
S.No
Title
Semiconductor Physics and
Devices
T1
Author
Donald A Neaman
R1
Fundamentals
Semiconductor devices
R2
L.No
Unit No.
of
Publisher
Third Edition, Tata Mc
GrawHill Inc.2007.
.
Yang
Robert Boylestad
and Louis
Nashelsky
Topic to be covered
Page No.(s) of
Text or
Reference Book
1.
SEMICONDUCTOR DIODE
Introduction to materials and semiconductors
RB2 (02-06)
2.
RB2 (07-10)
3.
PN junction diode
RB2 (10-16)
Current equations
TB1 (269-
277)
TB1 (154-173)
TB1 (238-
junction diode
Breakdown mechanism in PN junction diode
248)
TB1( 231-
232)
TB1 (179-
Switching Characteristics
180)
TB1( 234-
4.
5.
6.
7.
8.
9.
236)
BIPOLAR JUNCTION
Principle of Operation of PNP, NPN transistors
RB2 (131-
11.
134)
RB2 (131-
12.
134)
RB2 (139-145)
13.
configuratuion
Input and Output characteristics of CB
RB2 (134-138)
14.
configuratuion
Input and Output characteristics of CC
RB2 (145-146)
10.
II
Characteristics
Hybrid - model
TB1 (418-
16.
h-parameter model
422)
TB1 (418-422)
17.
TB1 (413-
416)
TB1 (416-418)
TB1 (571-
channel JFETs
575)
TB1 (571-
578)
TB1 (571-
578)
15.
18.
19.
20.
21.
22.
III
23.
24.
MOSFET
Current equation - Equivalent circuit model and its
25.
26.
parameters
FINFET
27.
29.
30.
31.
IV
33.
NET
NET
405)
RB2 (801-
806)
RB2 (38-39)
RB2 (806-
809)
RB2 (809-
LASER diode
NET
TB1 (434436)
36.
39.
TB1( 502-504)
402)
RB2 (402-
35.
38.
RB2 (392399)
814)
34.
37.
TB1 (486-490)
28.
32.
RB2 (386-392)
NET
RB2 (848-
856)
RB2 (831-
841)
RB2 (845-
848)
40.
Power BJT
TB1 (438-440)
41.
TB1 (443-445)
LED, LCD
TB1 (647-650)
RB2 (819-
42.
822)
Photo transistor,Opto Coupler
TB1 (856-
44.
Solar cell
858)
TB1 (822-825)
45.
CCD
TB1 (447-448)
43.