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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Plastic Medium-Power Complementary Silicon Transistors

Designed for generalpurpose amplifier and lowspeed switching applications.

Features

High DC Current Gain

h FE

= 2500 (Typ) @ I C

= 4.0 Adc

CollectorEmitter Sustaining Voltage @ 100 mAdc

V CEO(sus)

= 60 Vdc (Min) TIP120, TIP125

= 80 Vdc (Min) TIP121, TIP126

= 100 Vdc (Min) TIP122, TIP127

Low CollectorEmitter Saturation Voltage V CE(sat) = 2.0 Vdc (Max) @ I C = 3.0 Adc

= 4.0 Vdc (Max) @ I C = 5.0 Adc

Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors

PbFree Packages are Available*

Shunt Resistors • Pb − Free Packages are Available* www.onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 6080100 VOLTS, 65 WATTS

MARKING

DIAGRAM 4 TO−220AB TIP12xG CASE 221A AYWW STYLE 1 STYLE 1: PIN 1. BASE 2.
DIAGRAM
4
TO−220AB
TIP12xG
CASE 221A
AYWW
STYLE 1
STYLE 1:
PIN 1.
BASE
2.
COLLECTOR
3.
EMITTER
1 2 3
4.
COLLECTOR
TIP12x
= Device Code
x
= 0, 1, 2, 5, 6, or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014

November, 2014 Rev. 9

1

Publication Order Number:

TIP120/D

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

MAXIMUM RATINGS

   

TIP120,

TIP121,

TIP122,

 
 

Rating

Symbol

TIP125

TIP126

TIP127

Unit

CollectorEmitter Voltage

V

CEO

60

80

100

Vdc

CollectorBase Voltage

V

CB

60

80

100

Vdc

EmitterBase Voltage

V

EB

 

5.0

Vdc

Collector Current

Continuous

 

I

C

 

5.0

Adc

Peak

 

8.0

Base Current

 

I

B

 

120

mAdc

Total Power Dissipation @ T C = 25°C Derate above 25°C

 

P

D

 

65

W

 

0.52

W/°C

Total Power Dissipation @ T A = 25°C Derate above 25°C

 

P

D

 

2.0

W

 

0.016

W/°C

Unclamped Inductive Load Energy (Note 1)

 

E

 

50

mJ

Operating and Storage Junction, Temperature Range

T J , T stg

 

65 to + 150

°C

THERMAL CHARACTERISTICS

 
 

Characteristic

Symbol

 

Max

Unit

Thermal Resistance, JunctiontoCase

R

JC

 

1.92

°C/W

Thermal Resistance, JunctiontoAmbient

R

JA

 

62.5

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. I C = 1 A, L = 100 mH, P.R.F. = 10 Hz, V CC = 20 V, R BE = 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2) (I C = 100 mAdc, I B = 0)

TIP120, TIP125

V

CEO(sus)

60

Vdc

TIP121, TIP126

80

TIP122, TIP127

100

Collector Cutoff Current (V CE = 30 Vdc, I B = 0) (V CE = 40 Vdc, I B = 0) (V CE = 50 Vdc, I B = 0)

TIP120, TIP125

 

I CEO

0.5

mAdc

TIP121, TIP126

 

0.5

TIP122, TIP127

0.5

Collector Cutoff Current (V CB = 60 Vdc, I E = 0) (V CB = 80 Vdc, I E = 0) (V CB = 100 Vdc, I E = 0)

TIP120, TIP125

 

I CBO

0.2

mAdc

TIP121, TIP126

 

0.2

TIP122, TIP127

0.2

Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)

 

I EBO

2.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (I C = 0.5 Adc, V CE = 3.0 Vdc) (I C = 3.0 Adc, V CE = 3.0 Vdc)

   

h

FE

1000

 

1000

CollectorEmitter Saturation Voltage (I C = 3.0 Adc, I B = 12 mAdc) (I C = 5.0 Adc, I B = 20 mAdc)

 

V

CE(sat)

   

Vdc

 

2.0

4.0

BaseEmitter On Voltage (I C = 3.0 Adc, V CE = 3.0 Vdc)

V

BE(on)

2.5

Vdc

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz)

 

h

fe

4.0

Output Capacitance (V CB = 10 Vdc, I E = 0, f = 0.1 MHz

TIP125, TIP126, TIP127 TIP120, TIP121, TIP122

 

C

ob

300

pF

 

200

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k
≈ 120
≈ 8.0 k
≈ 120
EMITTER
EMITTER

Figure 1. Darlington Circuit Schematic

ORDERING INFORMATION

Device

Package

 

Shipping

TIP120

TO220

50

Units / Rail

TIP120G

TO220

50

Units / Rail

(PbFree)

 

TIP121

TO220

50

Units / Rail

TIP121G

TO220

50

Units / Rail

(PbFree)

 

TIP122

TO220

50

Units / Rail

TIP122G

TO220

50

Units / Rail

(PbFree)

 

TIP125

TO220

50

Units / Rail

TIP125G

TO220

50

Units / Rail

(PbFree)

 

TIP126

TO220

50

Units / Rail

TIP126G

TO220

50

Units / Rail

(PbFree)

 

TIP127

TO220

50

Units / Rail

TIP127G

TO220

50

Units / Rail

(PbFree)

 
T A T C 4.0 80 3.0 60 T C 2.0 40 T A 1.0
T A
T C
4.0
80
3.0
60
T
C
2.0
40
T A
1.0
20
0
0 0
20
40
60
80
100
120
140
160
P D , POWER DISSIPATION (WATTS)

T, TEMPERATURE (°C)

Figure 2. Power Derating

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

V CC R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1
V
CC
R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D 1 MUST BE FAST RECOVERY TYPE, eg:
-
30 V
1N5825 USED ABOVE I B ≈ 100 mA
MSD6100 USED BELOW I B ≈ 100 mA
R
C
SCOPE
TUT
V
approx
+ 8.0 V
2
R
B
D
1
51
≈ 8.0 k
≈ 120
0
V 1
+
4.0 V
approx
-12 V
25 s
t r , t f ≤ 10 ns
DUTY CYCLE = 1.0%
for t d and t r , D 1 is disconnected
and V 2 = 0
For NPN test circuit reverse all polarities.
t, TIME ( s)μ

Figure 3. Switching Times Test Circuit

5.0 PNP t 3.0 s NPN 2.0 t 1.0 f 0.7 0.5 0.3 t 0.2
5.0
PNP
t
3.0
s
NPN
2.0
t
1.0
f
0.7
0.5
0.3
t
0.2
r
V CC = 30 V
I C /I B = 250
0.1
I B1
= I B2
T J = 25°C
0.07
t
@
d
V BE(off) = 0
0.05
0.1 0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10

I C , COLLECTOR CURRENT (AMP)

Figure 4. Switching Times

1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 P Z = r(t) R
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
P
Z
=
r(t) R JC
(pk)
JC(t)
0.1
R
=
1.92°C/W MAX
JC
0.07
0.05
D
CURVES
APPLY FOR POWER
0.05
PULSE TRAIN SHOWN
t
0.02
1
READ TIME AT t 1
0.03
t
2
T
J(pk) -
T C = P (pk) Z JC(t)
DUTY CYCLE, D = t 1 /t 2
0.02
0.01
SINGLE
PULSE
0.01
0.01
0.02 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)

t, TIME (ms)

Figure 5. Thermal Response

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

20 100 s 10 500 s 5.0 dc 2.0 T J = 150°C BONDING WIRE
20
100 s
10
500 s
5.0
dc
2.0
T J = 150°C
BONDING WIRE LIMITED
1.0
THERMALLY
LIMITED
1
ms
0.5
@ T C =
25°C
(SINGLE PULSE)
5
ms
SECOND BREAKDOWN LIMITED
0.2
CURVES APPLY BELOW
0.1
RATED V CEO
TIP120,
TIP125
0.05
TIP121,
TIP126
TIP122,
TIP127
0.02
1.0 2.0
3.0
5.0
7.0
10 20
30
50
70
100
I C , COLLECTOR CURRENT (AMP)

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. ActiveRegion Safe Operating Area

10,000 5000 3000 2000 1000 500 = 25 ° C T C 300 4.0 Vdc
10,000
5000
3000
2000
1000
500
=
25
°
C
T C
300
4.0
Vdc
V CE =
200
I C = 3.0
Adc
100
50
30
PNP
20
NPN
10
1.0 2.0
5.0
10
20
50
100
200
500 1000
h fe , SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)

f, FREQUENCY (kHz)

Figure 7. SmallSignal Current Gain

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on T J(pk) = 150°C; T C is

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)

< 150°C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

limitations imposed by second breakdown 300 = 25°C T J 200 C ob 100 70
limitations imposed by second breakdown
300
= 25°C
T J
200
C ob
100
70
C ib
50
PNP
NPN
30
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100

V R , REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

NPN TIP120, TIP121, TIP122

20,000 20,000 4.0 V V CE = 10,000 10,000 7000 5000 5000 T J =
20,000
20,000
4.0
V
V CE =
10,000
10,000
7000
5000
5000
T J = 150°C
3000
3000
2000
25°C
2000
1000
-
55°C
1000
700
500
500
300
300
200
200
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
PNP TIP125, TIP126, TIP127 4.0 V V CE = T J = 150°C 25°C -
PNP
TIP125, TIP126, TIP127
4.0 V
V CE =
T J = 150°C
25°C
- 55°C

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

I C , COLLECTOR CURRENT (AMP)

I C , COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain

3.0 T J = 25°C I C = 2.0 A 2.6 4.0 A 6.0 A
3.0
T J = 25°C
I C =
2.0 A
2.6
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3 0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20 30
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

I B , BASE CURRENT (mA)

3.0 T J = 25°C 2.6 I C = 2.0 A 4.0 A 6.0 A
3.0
T J = 25°C
2.6
I C = 2.0 A
4.0 A
6.0
A
2.2
1.8
1.4
1.0
0.3 0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

I B , BASE CURRENT (mA)

Figure 10. Collector Saturation Region

3.0 T J = 25°C 2.5 2.0 1.5 V BE(sat) @ I C /I B
3.0
T J = 25°C
2.5
2.0
1.5
V BE(sat) @ I C /I B = 250
V BE @ V CE = 4.0 V
1.0
= 250
V CE(sat) @ I C /I B
0.5
0.1 0.2
0.3
0.5
0.7
1.0
2.0
3.0 5.0
7.0
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
3.0 T J = 25°C 2.5 2.0 1.5 = 4.0 V V BE @ V
3.0
T J = 25°C
2.5
2.0
1.5
= 4.0 V
V BE @ V CE
= 250
V BE(sat) @ I
C /I B
1.0
= 250
V CE(sat) @ I C /I B
0.5
0.1 0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0
7.0
10

I C , COLLECTOR CURRENT (AMP)

Figure 11. “On” Voltages

I C , COLLECTOR CURRENT (AMP)

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

B 4 Q A 1 23 H K Z L V G D N
B
4
Q
A
1 23
H
K
Z
L
V
G
D
N

F

PACKAGE DIMENSIONS

TO220

CASE 221A09

ISSUE AH SEATING −T− PLANE C T S U R J
ISSUE AH
SEATING
−T−
PLANE
C
T
S
U
R
J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.415

9.66

10.53

C

0.160

0.190

4.07

4.83

D

0.025

0.038

0.64

0.96

F

0.142

0.161

3.61

4.09

G

0.095

0.105

2.42

2.66

H

0.110

0.161

2.80

4.10

J

0.014

0.024

0.36

0.61

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

---

1.15

---

Z

---

0.080

---

2.04

STYLE 1:

PIN 1.

BASE

2.

COLLECTOR

3.

EMITTER

4.

COLLECTOR

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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7

TIP120/D