BCR20KM

MITSUBISHI SEMICONDUCTOR TRIAC
BCR20KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150C
MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20KM
OUTLINE DRAWING
Dimensions in mm
3 0.3
6.5 0.3
2.8 0.2
3.2 0.2
3.6 0.3
14 0.5
15 0.3
10 0.3
1.1 0.2
1.1 0.2
0.75 0.15
................................................................ 20A
................................................................. 600V
IFGT !, IRGT ! , IRGT # .................................... 20mA
Viso ................................................................. 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
VDRM
2.6 0.2
IT (RMS)
0.75 0.15
2.54 0.25
4.5 0.2
2.54 0.25
Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Voltage class
Parameter
Repetitive peak off-state
Non-repetitive peak off-state voltage1
Symbol
Parameter
Unit
12
600
720
voltage1
Conditions
IT (RMS)
ITSM
RMS on-state current

Surge on-state current
Commercial frequency, sine full wave 360 conduction, Tc=85C

60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current
PGM
Peak gate power dissipation
PG (AV)
VGM
IGM
Tj
Tstg
Average gate power dissipation

Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Viso
Weight
Isolation voltage
Typical value
Ta=25C, AC 1 minute, T1 T2 G terminal to case
V
V
Ratings
20
Unit
200
A
A
167
A 2s
5
0.5
10
W
W
V
2
40 ~ +125
40 ~ +125
A
C
C
2.0
2000
g
V
1. Gate open.
Mar. 2002
This datasheet has been downloaded from http://www.digchip.com at this page
BCR20KM
MEDIUM POWER USE

ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDRM
VTM
Repetitive peak off-state current

On-state voltage
VFGT !
VRGT !
Gate trigger voltage 2
Rth (j-c)
(dv/dt)c
Tj=125C, VDRM applied

Tc=25C, ITM=30A, Instantaneous measurement
!
@
Tj=25C, VD=6V, RL=6, RG=330
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Limits
Test conditions
Gate trigger current 2
Tj=25C, VD=6V, RL=6, RG=330
Gate non-trigger voltage

Thermal resistance
Tj=125C, VD=1/2VDRM
Junction to case 3
Critical-rate of rise off-state commutating voltage4 Tj=125C
Min.
Typ.
0.2
10
Max.
2.0
1.5
1.5
1.5
1.5
Unit
mA
V
V
V
20
20
20
V
mA
mA
mA
V
2.0
C/ W
V/s
2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms

(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125C
2. Rate of decay of on-atate commutating current
(di/dt)c=10A/ms
TIME
(di/dt)c
MAIN
CURRENT
3. Peak off-state voltage

VD=400V
TIME
MAIN
VOLTAGE
(dv/dt)c
TIME
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE
CURRENT
MAXIMUM ON-STATE
CHARACTERISTICS
103
ON-STATE CURRENT (A)
3
2
102
7
5
Tj = 125C
3
2
101
7
5
3
2
Tj = 25C
100
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
240
7
5
200
160
120
80
40
0
100
5 7 101
5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
BCR20KM
MEDIUM POWER USE

102
GATE VOLTAGE (V)
7
5
3
2
VGM = 10V
PGM = 5W
101
7
5
3
2
VGT = 1.5V
PG(AV) =
0.5W
IGM =
2A
100
7
5
IFGT I, IRGT I, IRGT III
3
2
VGD = 0.2V
101 1
10 2 3 5 7102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT (Tj = 25C)
100 (%)
GATE CHARACTERISTICS
(, AND )
GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE
103
3
2
102
102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (C/W)
TYPICAL EXAMPLE
IRGT III
101
60 40 20 0 20 40 60 80 100 120 140
MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102 2 3 5 7103 2 3 5 7 104 2 3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
101 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
JUNCTION TEMPERATURE (C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER

DISSIPATION
ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT
160
40
CASE TEMPERATURE (C)
100 (%)
GATE TRIGGER VOLTAGE (Tj = tC)
GATE TRIGGER VOLTAGE (Tj = 25C)
ON-STATE POWER DISSIPATION (W)
IRGT I
GATE TRIGGER VOLTAGE VS.

30 360
CONDUCTION
RESISTIVE,
INDUCTIVE
20 LOADS
10
IFGT I
7
5
GATE CURRENT (mA)
103
7
5
4
3
2
TYPICAL EXAMPLE
7
5
10
15
20
25
RMS ON-STATE CURRENT (A)
30
CURVES APPLY REGARDLESS

140 OF CONDUCTION ANGLE
120
100
80
60
360
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
5
10
15
20
25
30

Mar. 2002
BCR20KM
MEDIUM POWER USE
40
20
5
10
15
20
25
7
5
3
2
102
60 40 20 0 20 40 60 80 100 120 140
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
TYPICAL EXAMPLE
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
103
7
5
4
3
TYPICAL EXAMPLE
IH(typ) = 20mA
102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
LACHING CURRENT VS.

BREAKOVER VOLTAGE VS.

103
LACHING CURRENT (mA)
60
HOLDING CURRENT VS.

103
DISTRIBUTION
3
2
T2+, G
TYPICAL
EXAMPLE
102
7
5
3
2
101
3
2
80
REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION
TEMPERATURE
7
5
3
2
7
5
100
104
7
5
120
105
7
5
3
2
NATURAL CONVECTION
NO FINS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
140
30
HOLDING CURRENT (Tj = tC)

HOLDING CURRENT (Tj = 25C)
T2+, G+ TYPICAL
T2 , G EXAMPLE
100
60 40 20 0 20 40 60 80 100 120 140
100 (%)
100 (%)
ALLOWABLE AMBIENT TEMPERATURE

160
AMBIENT TEMPERATURE (C)

160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
NATURAL CONVECTION
120
160 160 t 2.3
100
100 100 t 2.3
80
60 60 t 2.3
60
BREAKOVER VOLTAGE (Tj = tC)

BREAKOVER VOLTAGE (Tj = 25C)

160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100120 140
Mar. 2002
BCR20KM
MEDIUM POWER USE

BREAKOVER VOLTAGE (dv/dt = xV/s )

BREAKOVER VOLTAGE (dv/dt = 1V/s )
140
120
TYPICAL EXAMPLE
Tj = 125C
100
III QUADRANT
CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/s)
100 (%)

RATE OF RISE OF
OFF-STATE VOLTAGE
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7104
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS
102
SUPPLY
VOLTAGE
7
5
MAIN
VOLTAGE
(dv/dt)c
3
2
TYPICAL
EXAMPLE
Tj = 125C
IT = 4A
= 500s
VD = 200V
f = 3Hz
TIME
MAIN CURRENT
(di/dt)c
TIME
TIME
VD
101
7
5
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
I QUADRANT
3
2
100
7
7 101
7 102
RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE CURRENT PULSE WIDTH
100 (%)
103
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)

GATE TRIGGER CURRENT (DC)
7
5
3
IRGT I
2 IFGT I
IRGT III
102
7
5
3
2
101 0
10
5 7 101
5 7 102
GATE TRIGGER PULSE WIDTH (s)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6
6V
V
6V
330
TEST PROCEDURE 1
330
TEST PROCEDURE 2
6V
V
330
TEST PROCEDURE 3
Mar. 2002
BCR20KM
The product guaranteed maximum junction
temperature 150C (See warning.)
MEDIUM POWER USE

BCR20KM
OUTLINE DRAWING
Dimensions in mm
3 0.3
6.5 0.3
2.8 0.2
3.2 0.2
3.6 0.3
14 0.5
15 0.3
10 0.3
1.1 0.2
1.1 0.2
0.75 0.15
................................................................ 20A
................................................................. 600V
IFGT !, IRGT ! , IRGT # .................................... 20mA
Viso ................................................................. 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
VDRM
2.6 0.2
IT (RMS)
0.75 0.15
2.54 0.25
4.5 0.2
2.54 0.25
Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Voltage class
Parameter
Repetitive peak off-state
Non-repetitive peak off-state voltage1
Symbol
Parameter
Unit
12
600
720
voltage1
Conditions
IT (RMS)
ITSM
RMS on-state current

Surge on-state current
Commercial frequency, sine full wave 360 conduction, Tc=110C

60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current
PGM
Peak gate power dissipation
PG (AV)
VGM
IGM
Tj
Tstg
Average gate power dissipation

Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Viso
Weight
Isolation voltage
Typical value
Ta=25C, AC 1 minute, T1 T2 G terminal to case
V
V
Ratings
20
Unit
200
A
A
167
A 2s
5
0.5
10
W
W
V
2
40 ~ +150
40 ~ +150
A
C
C
2.0
2000
g
V
1. Gate open.
Mar. 2002
BCR20KM
MEDIUM POWER USE

ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDRM
VTM
Repetitive peak off-state current

On-state voltage
VFGT !
VRGT !
Gate trigger voltage 2
Rth (j-c)
(dv/dt)c
Tj=125C/150C, VDRM applied

Tc=25C, ITM=30A, Instantaneous measurement
!
@
Tj=25C, VD=6V, RL=6, RG=330
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Limits
Test conditions
Gate trigger current 2
Tj=25C, VD=6V, RL=6, RG=330
Gate non-trigger voltage

Thermal resistance
Tj=125C/150C, VD=1/2VDRM
Junction to case 3
Critical-rate of rise off-state commutating voltage4 Tj=125C/150C
Min.
Typ.
0.2/0.1
10/1
Max.
2.0/3.0
1.5
1.5
1.5
1.5
Unit
mA
V
V
V
20
20
20
V
mA
mA
mA
V
2.0
C/ W
V/s
2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms

(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125C/150C
TIME
(di/dt)c
2. Rate of decay of on-atate commutating current

(di/dt)c=10A/ms
MAIN
CURRENT
3. Peak off-state voltage

VD=400V
MAIN
VOLTAGE
(dv/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE
CURRENT
MAXIMUM ON-STATE
CHARACTERISTICS
103
240
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
7
5
3
2
102
7
5
Tj = 150C
3
2
101
7
5
Tj = 25C
3
2
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ON-STATE VOLTAGE (V)
4.0
200
160
120
80
40
0
100
5 7 101
5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
BCR20KM
MEDIUM POWER USE

GATE VOLTAGE (V)
3
2 VGM = 10V
PGM = 5W
101
7
5
3 VGT = 1.5V
2
PG(AV) =
0.5W
IGM =
2A
100
7
5
IFGT I, IRGT I, IRGT III
3
2
101
VGD = 0.1V
7
5
GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT (Tj = 25C)
100 (%)
GATE CHARACTERISTICS
(, AND )
101 2 3 5 7102 2 3 5 7 103 2 3 5 7 104

103
3
2
102 IFGT I
7
5
3
2
101
60 40 20 0 20 40 60 80 100 120 140 160
TRANSIENT THERMAL IMPEDANCE (C/W)
102
7
5
4
3
2
MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102 2 3 5 7103 2 3 5 7 104 2 3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
101 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER

DISSIPATION
ALLOWABLE CASE TEMPERATURE

160
40
CASE TEMPERATURE (C)
100 (%)
GATE TRIGGER VOLTAGE (Tj = tC)
GATE TRIGGER VOLTAGE (Tj = 25C)
ON-STATE POWER DISSIPATION (W)
TYPICAL EXAMPLE
30 360
CONDUCTION
RESISTIVE,
INDUCTIVE
20 LOADS
10
IRGT III
GATE TRIGGER VOLTAGE VS.

IRGT I
101
60 40 20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
103
7
5
4
3
2
TYPICAL EXAMPLE
7
5
10
15
20
25
30
140

OF CONDUCTION ANGLE
120
100
80
60
360
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
5
10
15
20
25
30

Mar. 2002
BCR20KM
MEDIUM POWER USE
80
60 160 160
t 2.3
40
100 100
t 2.3
20
60 60 t 2.3
0
0
5
10
20
25
60
40
20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
7
5
3
2
103
7
5
3
2
102
60 40 20 0 20 40 60 80 100 120 140 160
HOLDING CURRENT (Tj = tC)

HOLDING CURRENT (Tj = 25C)
TYPICAL EXAMPLE
100 (%)
HOLDING CURRENT VS.

103
7
5
4
3
TYPICAL EXAMPLE
IH(typ) = 20mA
102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140 160
LACHING CURRENT VS.


103
LACHING CURRENT (mA)
80
REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION
TEMPERATURE
103
DISTRIBUTION
3
2
T2+, G
TYPICAL
EXAMPLE
102
7
5
3
2
101
3
2
100
7
5
3
2
7
5
120
NATURAL CONVECTION
NO FINS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
103
7
5
140
30
T2+, G+ TYPICAL
T2 , G EXAMPLE
100
60 40 20 0 20 40 60 80 100 120 140 160
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
5
3
2
15
BREAKOVER VOLTAGE (Tj = tC)

BREAKOVER VOLTAGE (Tj = 25C)
100
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS

160

160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
NATURAL CONVECTION
120
100 (%)

160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100 120 140 160
Mar. 2002
BCR20KM
TYPICAL EXAMPLE
Tj = 125C


140
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104

RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150C)
160
TYPICAL EXAMPLE
Tj = 150C
140
160
120
100
80
III QUADRANT
60
40
I QUADRANT
20
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
(Tj = 125C)
(Tj = 150C)
102
SUPPLY
VOLTAGE
7
5
(di/dt)c
TIME
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
3
2
TYPICAL
EXAMPLE
Tj = 125C
IT = 4A
= 500s
VD = 200V
f = 3Hz
TIME
TIME
VD
101
7
5
MINIMUM
III QUADRANT
CHARACTERISTICS
VALUE
I QUADRANT
3
2
100
7
7 101
102


100 (%)

RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125C)
100 (%)
MEDIUM POWER USE


102
SUPPLY
VOLTAGE
7
5
MAIN
VOLTAGE
(dv/dt)c
3
2
101
TIME
VD
I QUADRANT
7
5
III QUADRANT
3
2
MINIMUM
CHARACTERISTICS
VALUE
100
7
TYPICAL
EXAMPLE
Tj = 150C
IT = 4A
= 500s
VD = 200V
f = 3Hz
TIME
(di/dt)c
TIME
MAIN CURRENT
7 101
7 102

GATE TRIGGER CURRENT (tw)

GATE TRIGGER CURRENT (DC)
100 (%)

GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
IRGT I
IRGT III
2 IFGT I
102
7
5
3
2
101 0
10
5 7 101
5 7 102
GATE TRIGGER PULSE WIDTH (s)

Mar. 2002
BCR20KM
MEDIUM POWER USE

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6
RECOMMENDED CIRCUIT VALUES

AROUND THE TRIAC
6
LOAD
A
6V
330
TEST PROCEDURE 1
C1
6V
V
330
TEST PROCEDURE 2
R1
C1 = 0.1~0.47F
R1 = 47~100
C0
R0
C0 = 0.1F
R0 = 100
6V
V
330
TEST PROCEDURE 3
Mar. 2002

BCR20KM

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MITSUBISHI SEMICONDUCTOR TRIAC

MEDIUM POWER USE

RMS on-state current

Commercial frequency, sine full wave 360 conduction, Tc=85C

I2t for fusing

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

Peak gate power dissipation

Average gate power dissipation

This datasheet has been downloaded from http://www.digchip.com at this page

MITSUBISHI SEMICONDUCTOR TRIAC

Refer to the page 6 as to the product guaranteed

Repetitive peak off-state current

Gate trigger voltage 2

Tj=125C, VDRM applied

Tj=25C, VD=6V, RL=6, RG=330

Gate trigger current 2

Tj=25C, VD=6V, RL=6, RG=330

Gate non-trigger voltage

2. Measurement using the gate trigger characteristics measurement circuit.

Commutating voltage and current waveforms

3. Peak off-state voltage

ON-STATE CURRENT (A)

SURGE ON-STATE CURRENT (A)

MITSUBISHI SEMICONDUCTOR TRIAC

Refer to the page 6 as to the product guaranteed

GATE VOLTAGE (V)

IFGT I, IRGT I, IRGT III

GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT VS.

TRANSIENT THERMAL IMPEDANCE (C/W)

MAXIMUM TRANSIENT THERMAL

JUNCTION TEMPERATURE (C)

MAXIMUM ON-STATE POWER

ALLOWABLE CASE TEMPERATURE

CASE TEMPERATURE (C)

JUNCTION TEMPERATURE (C)

GATE TRIGGER VOLTAGE VS.

GATE CURRENT (mA)

RMS ON-STATE CURRENT (A)

CURVES APPLY REGARDLESS

RMS ON-STATE CURRENT (A)

MITSUBISHI SEMICONDUCTOR TRIAC

REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

JUNCTION TEMPERATURE (C)

JUNCTION TEMPERATURE (C)

LACHING CURRENT VS.

BREAKOVER VOLTAGE VS.

LACHING CURRENT (mA)

HOLDING CURRENT VS.

REPETITIVE PEAK OFF-STATE

RMS ON-STATE CURRENT (A)

RMS ON-STATE CURRENT (A)

HOLDING CURRENT (Tj = tC)

ALLOWABLE AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (C)

ALLOWABLE AMBIENT TEMPERATURE

BREAKOVER VOLTAGE (Tj = tC)

AMBIENT TEMPERATURE (C)

Refer to the page 6 as to the product guaranteed

MITSUBISHI SEMICONDUCTOR TRIAC

Refer to the page 6 as to the product guaranteed

BREAKOVER VOLTAGE (dv/dt = xV/s )