Data Sheet

SCT2160KE
N-channel SiC power MOSFET
Datasheet
lOutline
VDSS
1200V
RDS(on) (Typ.)
160mW
ID
22A
PD
165W
TO-247
(1) (2)
(3)
lInner circuit
lFeatures
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
*1 Body Diode
4) Easy to parallel
5) Simple to drive
lPackaging specifications
6) Pb-free lead plating ; RoHS compliant
Packaging
lApplication
Type
Tube
Reel size (mm)
Tape width (mm)
Solar inverters
Basic ordering unit (pcs)
DC/DC converters
Taping code
Switch mode power supplies
Marking
30
SCT2160KE
Induction heating
Motor drives
lAbsolute maximum ratings (Ta = 25C)
Parameter
Drain - Source voltage
Symbol
Value
Unit
VDSS
1200
Tc = 25C
ID
*1
22
Tc = 100C
ID *1
16
ID,pulse *2
55
VGSS
-6 to 22
Power dissipation (Tc = 25C)
PD
165
Junction temperature
Tj
175
Tstg
-55 to +175
Continuous drain current

Pulsed drain current
Gate - Source voltage
Range of storage temperature
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2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
0.70
0.91
C/W
Thermal resistance, junction - ambient
RthJA
50
C/W
Soldering temperature, wavesoldering for 10s
Tsold
265
lElectrical characteristics (Ta = 25C)

Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Values
Unit
Min.
Typ.
Max.
1200
Tj = 25C
10
mA
Tj = 150C
VGS = 0V, ID = 1mA

VDS = 1200V, VGS = 0V
Zero gate voltage

drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-100
nA
1.6
4.0
160
208
mW
Tj = 125C
226
f = 1MHz, open drain
13.7
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 2.5mA

VGS = 18V, ID = 7A
Static drain - source

on - state resistance
Gate input resistance
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RDS(on) *3 Tj = 25C
RG
2/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
lElectrical characteristics (Ta = 25C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *3
VDS = 10V, ID = 7A
2.4
Input capacitance
Ciss
VGS = 0V
1200
Output capacitance
Coss
VDS = 800V
45
Reverse transfer capacitance
Crss
f = 1MHz
Effective output capacitance,

energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
71
Turn - on delay time
td(on) *3
VDD = 400V, ID = 7A
23
VGS = 18V/0V
25
td(off) *3
RL = 57W
67
tf *3
RG = 0W
27
126
tr *3
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
Eon *3
Eoff *3
VDD = 600V, ID=7A

VGS = 18V/0V
RG = 0W, L=500mH
*Eon includes diode
reverse recovery
Unit
S
pF
pF
ns
mJ
-
55
lGate Charge characteristics (Ta = 25C)

Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg *3
VDD = 400V
62
Gate - Source charge
Qgs *3
ID = 7A
14
Gate - Drain charge
Qgd *3
VGS = 18V
20
Gate plateau voltage
V(plateau)
VDD = 400V, ID = 7A
9.6
Unit
nC
*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%
*3 Pulsed
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3/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
lBody diode electrical characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol
Inverse diode continuous,

forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
22
55
4.1
26
ns
39
nC
3.0
Tc = 25C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *3
Reverse recovery time
trr *3
Reverse recovery charge
Qrr *3
Peak reverse recovery current
Irrm *3
VGS = 0V, IS = 7A
IF = 7A, VR = 400V
di/dt = 160A/ms
lTypical Transient Thermal Characteristics

Symbol
Value
Rth1
96.1m
Rth2
404m
Rth3
196m
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Unit
K/W
4/13
Symbol
Value
Cth1
1.55m
Cth2
5.23m
Cth3
83.3m
Unit
Ws/K
2013.05 - Rev.A
Data Sheet
SCT2160KE
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
180
PW = 100ms
PW = 1ms
140
Drain Current : ID [A]
Power Dissipation : PD [W]
160
120
100
80
60
40
PW = 10ms
PW = 100ms
10
Operation in this area

is limited by RDS(on)
Ta=25C
Single Pulse
20
0
50
100
150
0.1
200
0.1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [C]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
1
0.1
0.01
Ta=25C
Single Pulse
0.001
0.0001
0.001
0.01
0.1
10
Pulse Width : PW [s]
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5/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
Fig.4 Typical Output Characteristics(I)

20
Ta=25C
Pulsed
18V
16
14V
12V
12
10
8
6
10V
16V
10V
5
4
3
VGS= 8V
VGS= 8V
10
16V
14
14V
10
12V
18V
16
10V
12
10
8
VGS= 8V
6
4
20V
18V
16V
10V
14V
12V
6
5
VGS= 8V
4
3
Ta=150C
Pulsed
1
0
10
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Ta=150C
Pulsed
Fig.7 Tj = 150C Typical Output

Characteristics(II)
20V
18
Fig.6 Tj = 150C Typical Output

Characteristics(I)
20
Ta=25C
Pulsed
12V
14V
18V
16V
14
20V
10
20V
18
Fig.5 Typical Output Characteristics(II)
6/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
10
20
VDS= 10V
Plused
18
16
VDS= 10V
Plused
Ta=150C
Ta=75C
Ta=25C
Ta= -25C
0.1
0.01
14
12
10
8
Ta=150C
Ta=75C
Ta=25C
Ta= -25C
6
4
2
0.001
10 12 14 16 18 20
Fig.10 Gate Threshold Voltage

vs. Junction Temperature
10 12 14 16 18 20
Fig.11 Transconductance vs. Drain Current
10
VDS = 10V
ID = 3mA
4.5
VDS= 10V
Plused
Transconductance : gfs [S]
4
3.5
3
2.5
2
1.5
1
0.1
Ta=150C
Ta=75C
Ta=25C
Ta= -25C
0.5
0
-50
Gate - Source Voltage : VGS [V]
Gate Threshold Voltage : VGS(th) [V]
50
100
150
0.01
0.01
200
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0.1
10
7/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
0.6
Ta=25C
Pulsed
0.5
0.4
0.3
ID = 15A
0.2
ID = 7A
0.1
0
10
12
14
16
18
20
Fig.13 Static Drain - Source On - State

Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]

: RDS(on) [W]

Resistance vs. Gate Source Voltage
22
0.4
0.35
VGS= 18V
Plused
0.3
0.25
ID = 15A
0.2
0.15
ID = 7A
0.1
0.05
0
-50
50
100
150
200

: RDS(on) [W]

Resistance vs. Drain Current
1
VGS= 18V
Plused
Ta=150C
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
0.1
10
100
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8/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
Fig.15 Typical Capacitance

vs. Drain - Source Voltage
Fig.16 Coss Stored Energy

20
1000
Coss Stored Energy : EOSS [mJ]
Capacitance : C [pF]
10000
Ciss
100
Coss
10
Ta=25C
f = 1MHz
VGS = 0V
0.1
Crss
10
100
16
14
12
10
8
6
4
2
0
1000
Ta=25C
18
200
400
600
800
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
10000
20
1000
td(off)
100
td(on)
10
Switching Time : t [ns]
tf
Ta = 25C
VDD = 400V
VGS = 18V
RG= 0W
Pulsed
tr
0.1
10
10
10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
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15
100
Ta = 25C
VDD= 400V
ID= 7A
Pulsed
9/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
Fig.19 Typical Switching Loss

vs. Drain - Source Voltage

vs. Drain Current
800
Ta = 25C
ID= 7A
VGS = 18V/0V
RG= 0W
L=500mH
200
Ta = 25C
VDD= 600V
VGS = 18V/0V
RG= 0W
L=500mH
700
Switching Energy : E [mJ]
250
Eon
150
100
Eoff
50
600
500
Eon
400
300
Eoff
200
100
200
400
600
800
1000
10
15
20
25

vs. External Gate Resistance
350
Ta = 25C
VDD= 600V
ID= 7A
VGS = 18V/0V
L=500mH
300
250
Eon
200
150
Eoff
100
50
0
10
15
20
25
30
External Gate Resistance : RG [W]
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10/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current
100
1000
VGS=0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
Fig.22 Inverse Diode Forward Current

vs. Source - Drain Voltage
10
Ta=150C
Ta=75C
Ta=25C
Ta= -25C
0.1
0.01
Source - Drain Voltage : VSD [V]
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100
10
Ta=25C
di / dt = 160A / ms
VR = 400V
VGS = 0V
Pulsed
10
100
Inverse Diode Forward Current : IS [A]
11/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms

Eon = IDVDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = IDVDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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12/13
2013.05 - Rev.A
Data Sheet
SCT2160KE
lDimensions (Unit : mm)
TO-247
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13/13
2013.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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SCT2160KE

N-channel SiC power MOSFET

6) Pb-free lead plating ; RoHS compliant

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Switch mode power supplies

Power dissipation (Tc = 25C)

Continuous drain current

Range of storage temperature

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

lElectrical characteristics (Ta = 25C)

VGS = 0V, ID = 1mA

Zero gate voltage

Gate - Source leakage current

VGS = +22V, VDS = 0V

Gate - Source leakage current

VGS = -6V, VDS = 0V

f = 1MHz, open drain

Gate threshold voltage

VDS = VGS, ID = 2.5mA

Static drain - source

Reverse transfer capacitance

Effective output capacitance,

Turn - on delay time

Turn - off switching loss

VDD = 600V, ID=7A

lGate Charge characteristics (Ta = 25C)

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

*1 Limited only by maximum temperature allowed.

Inverse diode continuous,

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

lTypical Transient Thermal Characteristics

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

Drain Current : ID [A]

Power Dissipation : PD [W]

Operation in this area

Drain - Source Voltage : VDS [V]

Junction Temperature : Tj [C]

Transient Thermal Resistance : Rth [K/W]

Fig.3 Typical Transient Thermal

Pulse Width : PW [s]

Fig.4 Typical Output Characteristics(I)

Drain Current : ID [A]

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.7 Tj = 150C Typical Output

Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150C Typical Output

Drain - Source Voltage : VDS [V]

Drain Current : ID [A]

Drain Current : ID [A]

Fig.5 Typical Output Characteristics(II)

Drain - Source Voltage : VDS [V]

Fig.8 Typical Transfer Characteristics (I)

Fig.9 Typical Transfer Characteristics (II)