STS6PF30L

P-CHANNEL 30V - 0.025 - 6A SO-8

STripFET II POWER MOSFET
PRELIMINARY DATA
TYPE
STS6PF30L

VDSS

RDS(on)

ID

30 V

< 0.030

6A

TYPICAL RDS(on) = 0.025

STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
SO-8

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
MOBILE PHONE APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol
VDS
VDGR
VGS

Parameter

Value

Unit

Drain-source Voltage (VGS = 0)

30

Drain-gate Voltage (RGS = 20 k)

30

Gate- source Voltage

20

ID

Drain Current (continuous) at TC = 25C

ID

Drain Current (continuous) at TC = 100C

Drain Current (pulsed)

24

Total Dissipation at TC = 25C

2.5

IDM (
)
PTOT

( ) Pulse width limited by safe operating area

December 2002

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

1/6

STS6PF30L
THERMAL DATA
Rthj-amb(#)
Tj
Tstg

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose Typ
Storage Temperature

50

C/W

150

55 to 150

(#) When mounted on 1 inch2 FR4 Board, 2 oz of Cu and t 10s

ELECTRICAL CHARACTERISTICS (TJ = 25 C UNLESS OTHERRWISE SPECIFIED)

OFF
Symbol
V(BR)DSS
IDSS
IGSS

Parameter

Test Conditions

Min.

Typ.

Max.

30

Unit

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 C

10

Gate-body Leakage
Current (VDS = 0)

VGS = 20V

100

nA

ON (1)
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

1.6

2.5

VGS = 10V, ID = 3A

0.025

0.030

VGS = 4.5V, ID = 3A

0.032

0.040

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-source On
Resistance

DYNAMIC
Symbol
gfs (1)

2/6

Parameter

Test Conditions

Forward Transconductance

VDS = 10V, ID = 3A

Ciss

Input Capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

Coss
Crss

Min.

11

1670

pF

Output Capacitance

345

pF

Reverse Transfer
Capacitance

120

pF

STS6PF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON(2)
Symbol
td(on)
tr
Qg
Qgs
Qgd

Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Test Conditions

Min.

VDD = 24V, ID = 6A
RG = 4.7 VGS = 4.5 V
(Resistive Load, Figure 3)
VDD =15 V, ID = 6 A,
VGS = 4.5V

Typ.

Max.

Unit

62

ns

48

ns

18.5
3.9
8.6

25

nC
nC
nC

Typ.

Max.

Unit

SWITCHING OFF(2)
Symbol
td(off)
tf

Parameter
Turn-off-Delay Time
Fall Time

Test Conditions

Min.

VDD =24 V, ID = 6 A,
RG = 4.7, VGS = 4.5 V
(Resistive Load, Figure 3)

57
19

ns
ns

SOURCE DRAIN DIODE (2)

Symbol
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM

Parameter

Test Conditions

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

24

Forward On Voltage

ISD = 6 A, VGS = 0

Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 6A, di/dt = 100A/s,

VDD = 24 V, Tj = 150C
(see test circuit, Figure 5)

Min.

Typ.

1.2
37
46
2.5

V
ns
nC
A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/6

STS6PF30L
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/6

STS6PF30L

SO-8 MECHANICAL DATA

mm

DIM.
MIN.

TYP.

A
a1

inch
MAX.

MIN.

TYP.

1.75
0.1

0.068

0.25

a2

MAX.

0.003

0.009

1.65

0.064

a3

0.65

0.85

0.025

0.033

0.35

0.48

0.013

0.018

b1

0.19

0.25

0.007

0.010

0.25

0.5

0.010

0.019

4.8

5.0

0.188

0.196

5.8

6.2

0.228

0.244

c1

45 (typ.)

1.27

e3

3.81

0.050
0.150

3.8

4.0

0.14

0.157

0.4

1.27

0.015

0.050

M
S

0.6

0.023
8 (max.)

0016023

5/6

STS6PF30L

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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6/6

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