Extreme ultraviolet - Wikipedia, the free encyclopedia

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From Wikipedia, the free encyclopedia

Extreme ultraviolet radiation (EUV or XUV) or high-energy ultraviolet radiation is electromagnetic radiation
in the part of the electromagnetic spectrum spanning wavelengths from 124 nm down to 10 nm, and therefore
(by the PlanckEinstein equation) having photons with energies from 10 eV up to 124 eV (corresponding to 124
nm to 10 nm respectively). EUV is naturally generated by the solar corona and artificially by plasma and
synchrotron light sources.
Its main uses are photoelectron spectroscopy, solar imaging, and lithography.
In air, EUV is the most highly absorbed component of the electromagnetic spectrum, requiring high vacuum for
transmission.

1 EUV generation
2 EUV absorption in matter
3 EUV damage
4 See also
5 References

Neutral atoms or condensed matter cannot emit EUV radiation. Ionization must take place first. EUV light can
only be emitted by electrons which are bound to multicharged positive ions; for example, to remove an electron
from a +3 charged carbon ion (three electrons already removed) requires about 65 eV.[1] Such electrons are
more tightly bound than typical valence electrons. The existence of multicharged positive ions is only possible
in a hot dense plasma. Alternatively, the free electrons and ions may be generated temporarily and
instantaneously by the intense electric field of a very-high-harmonic laser beam. The electrons accelerate as
they return to the parent ion, releasing higher energy photons at diminished intensities, which may be in the
EUV range. If the released photons constitute ionizing radiation, they will also ionize the atoms of the
harmonic-generating medium, depleting the sources of higher-harmonic generation. The freed electrons escape
since the electric field of the EUV light is not intense enough to drive the electrons to higher harmonics, while
the parent ions are no longer as easily ionized as the originally neutral atoms. Hence, the processes of EUV
generation and absorption (ionization) strongly compete against each other.
EUV light can also be emitted by free electrons orbiting a synchrotron.

When an EUV photon is absorbed, photoelectrons and secondary electrons are generated by ionization, much
like what happens when X-rays or electron beams are absorbed by matter.[2]

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The response of matter to EUV radiation can be captured in the following equations:
Point of absorption: EUV photon energy = 92 eV = Electron binding energy + photoelectron initial
kinetic energy
Within 3 mean free paths of photoelectron (1-2 nm): Reduction of photoelectron kinetic energy =
ionization potential + secondary electron kinetic energy
Within 3 mean free paths of secondary electron (~30 nm):
1. Reduction of secondary electron kinetic energy = ionization potential + tertiary electron kinetic energy
2. Nth generation electron slows down aside from ionization by heating (phonon generation)
3. Final generation electron kinetic energy ~ 0 eV => dissociative electron attachment + heat
where the ionization potential is typically 7-9 eV for organic materials and 4-5 eV for metals. The photoelectron
subsequently causes the emission of secondary electrons through the process of impact ionization. Sometimes,
an Auger transition is also possible, resulting in the emission of two electrons with the absorption of a single
photon.
Strictly speaking, photoelectrons, Auger electrons and secondary electrons are all accompanied by positively
charged holes (ions which can be neutralized by pulling electrons from nearby molecules) in order to preserve
charge neutrality. An electron-hole pair is often referred to as an exciton. For highly energetic electrons, the
electron-hole separation can be quite large and the binding energy is correspondingly low, but at lower energy,
the electron and hole can be closer to each other. The exciton itself diffuses quite a large distance (>10 nm).[3]
As the name implies, an exciton is an excited state; only when it disappears as the electron and hole recombine,
can stable chemical reaction products form.
Since the photon absorption depth exceeds the electron escape depth, as the released electrons eventually slow
down, they dissipate their energy ultimately as heat. EUV wavelengths are absorbed much more strongly than
longer wavelengths, since their corresponding photon energies exceed the bandgaps of all materials.
Consequently, their heating efficiency is significantly higher, and has been marked by lower thermal ablation
thresholds in dielectric materials.[4]

Like other forms of ionizing radiation, EUV and electrons released directly or indirectly by the EUV radiation
are a likely source of device damage. Damage may result from oxide desorption[5] or trapped charge following
ionization.[6] Damage may also occur through indefinite positive charging by the Malter effect. If free electrons
cannot return to neutralize the net positive charge, positive ion desorption[7] is the only way to restore neutrality.
However, desorption essentially means the surface is degraded during exposure, and furthermore, the desorbed
atoms contaminate any exposed optics. EUV damage has already been documented (http://www.promoptica.be
/publications/defise/pdf/spie3114_1997_eit.pdf) in the CCD radiation aging of the Extreme UV Imaging
Telescope (EIT).[8]
Radiation damage is a well-known issue that has been studied in the process of plasma processing damage. A
recent study at the University of Wisconsin Synchrotron indicated that wavelengths below 200 nm are capable
of measurable surface charging.[9] EUV radiation showed positive charging centimeters beyond the borders of

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exposure while VUV (Vacuum Ultraviolet) radiation showed positive charging within the borders of exposure.
Studies using EUV femtosecond pulses at the Free Electron Laser in Hamburg (FLASH) indicated thermal
melting-induced damage thresholds below 100 mJ/cm2.[10]
An earlier study[11] showed that electrons produced by the 'soft' ionizing radiation could still penetrate ~100 nm
below the surface, resulting in heating.

Extreme Ultraviolet Explorer

Extreme Ultraviolet Variability Experiment
Extreme ultraviolet Imaging Telescope
CHIPSat
Extreme ultraviolet lithography
List of plasma (physics) articles

1. ^ webelements.com (http://www.webelements.com)
2. ^ B. L . Henke et al., J. Appl. Phys. 48, pp. 1852-1866 (1977).
3. ^ P. Broms et al., Adv. Mat. 11, 826-832 (1999).
4. ^ A. Ritucci et al., "Damage and ablation of large band gap dielectrics induced by a 46.9 nm laser beam," March 9,
2006 report UCRL-JRNL-219656 (https://e-reports-ext.llnl.gov/pdf/331469.pdf) (Lawrence Livermore National
Laboratory).
5. ^ D. Ercolani et al., Adv. Funct. Mater. 15, pp. 587-592 (2005).
6. ^ D. J. DiMaria et al., J. Appl. Phys. 73, pp. 3367-3384 (1993).
7. ^ H. Akazawa, J. Vac. Sci. & Tech. A 16, pp. 3455-3459 (1998).
8. ^ J-M. Defise et al., Proc. SPIE 3114, pp. 598-607 (1997).
9. ^ J. L. Shohet, http://pptl.engr.wisc.edu/Nuggets%20v9a.ppt
10. ^ R. Sobierajski et al., http://hasyweb.desy.de/science/annual_reports/2006_report/part1/contrib/40/17630.pdf
11. ^ FEL 2004 - VUV pulse interactions with solids (http://www.elettra.trieste.it/fel2004/proceedings/papers/THCOS02
/THCOS02T.PDF)

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