FMV11N60E

FUJI POWER MOSFET

Super FAP-E3 series

N-CHANNEL SILICON POWER MOSFET

Features

Outline Drawings [mm]

Maintains both low power loss and low noise

Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.00.5V)
High avalanche durability

Equivalent circuit schematic

TO-220F(SLS)

Drain(D)

Applications

Gate(G)
Source(S)

Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25C (unless otherwise specied)
Description

Symbol
VDS

Drain-Source Voltage

Characteristics
600

Unit
V

Remarks

600

VGS = -30V

11
44
30
11
384
6.5
4.9
100
2.16
65
150
-55 to + 150

A
A
V
A
mJ
mJ
kV/s
A/s

VDSX

Continuous Drain Current

Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt

ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt

Maximum Power Dissipation

PD

Operating and Storage Temperature range

Tch
Tstg

Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25C
Tc=25C

W
C
C

Electrical Characteristics at Tc=25C (unless otherwise specied)

Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage

Symbol
BVDSS
VGS (th)

Zero Gate Voltage Drain Current

I DSS

Gate-Source Leakage Current

Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
I AV
VSD
trr
Qrr

Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

Conditions
I D =250A, VGS =0V
I D =250A, VDS =VGS
VDS =600V, VGS =0V
VDS =480V, VGS =0V
VGS =30V, VDS =0V
I D =5.5A, VGS =10V
I D =5.5A, VDS =25V

Tch =25C
Tch =125C

VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =5.5A
RG =15
Vcc =300V
I D =11A
VGS =10V
L=2.64mH, Tch =25C
I F =11A, VGS =0V, Tch =25C
I F =11A, VGS =0V
-di/dt=100A/s, Tch=25C

min.
600
2.5
6
11
-

typ.
3.0
10
0.641
12
1700
150
11
21
9.5
100
19
48.5
12.5
14
0.86
0.52
5.5

max.
3.5
25
250
100
0.75
2550
225
16.5
31.5
14.5
150
28.5
73
19
21
1.30
-

Unit
V
V

min.

typ.

max.
1.920
58.0

Unit
C/W
C/W

A
nA

S
pF

ns

nC
A
V
S
C

Thermal Characteristics
Description
Thermal resistance

Symbol
Rth (ch-c)
Rth (ch-a)

Note *1 : Tch150C
Note *2 : Stating Tch=25C, IAS =5A, L=28.2mH, Vcc=60V, RG =50
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.

Test Conditions
Channel to Case
Channel to Ambient

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph.
Note *4 : I F -I D, -di/dt=100A/s, VccBVDSS, Tch150C.
Note *5 : I F -I D, dv/dt=4.4kV/s, VccBVDSS, Tch150C.

FMV11N60E

80

FUJI POWER MOSFET

Allowable Power Dissipation

PD=f(Tc)

10

Safe Operating Area

ID=f(VDS):Duty=0(Single pulse),Tc=25 c
t=
1s

70
60

10

10s

100s

40

ID [A]

PD [W]

50

30

10

1ms

Pow er loss w aveform :

Square w aveform

-1

20

10

PD

10

DC

-2

10
0

25

50

75

100

125

150

10

-1

10

Tc [C]

20

10
VDS [V]

10

10

Typical Transfer Characteristic

ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C

Typical Output Characteristics

ID=f(VDS):80 s pulse test,Tch=25 C
1

10

15

ID[A]

ID [A]

10

10

10

-1

10

-2

10

-3

10

-4

0
0

100

10
VDS [V]

15

20

Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C

1.3

4
VGS[V]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 s pulse test,Tch=25 C
VGS=4.0V

4.5V

5V

1.2

6V
1.1

RDS(on) [ ]

gfs [S]

10

10V
20V

1.0
0.9
0.8
0.7

0.1

0.6
0.01
0.01

0.5
0.1

1
ID [A]

10

100

10
ID [A]

15

20

FMV11N60E

2.5

FUJI POWER MOSFET

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=5.5A,VGS=10V

VGS(th) [V]

2.0

1.5

RDS(on) [ ]

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250A

4
max.
3

typ.

min.

max.
1.0

typ.

0.5

0.0
-50

20

-25

25

50
Tch [C]

75

100

125

-50

150

Typical Gate Charge Characteristics

VGS=f(Qg):ID=11A,Tch=25 C

-25

25

50
75
Tch [C]

100

125

150

Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz

18
10

10

10

10

10

16
14

300V

12

480V

C [pF]

VGS [V]

Ciss

Vcc= 120V

10
8

Coss

6
4

Crss

2
0
0

100

10

20

30

40
Qg [nC]

50

60

70

80

-2

10

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 s pulse test,Tch=25 C

10

10

10

-1

10
VDS [V]

10

10

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=15

10

td(off)

t [ns]

IF [A]

tf
1

td(on)
10

10

tr

0.1

0.01
0.00

0.25

0.50

0.75
VSD [V]

1.00

1.25

1.50

10

-1

10

10

10

FMV11N60E

600

FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A

10

500

10
IAS=5A

EAV [mJ]

400

300

10

-1

10

-2

10

-3

IAS=7A

200

IAS=11A

100

-6

10

0
0

25

50

75

100

125

150

starting Tch [C]

10

-5

10

-4

10

-3

10

-2

-1

10

10

FMV11N60E

FUJI POWER MOSFET

WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.
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