BVDSS = 600 V

RDS(on) typ = 0.96

HFP8N60S

ID = 7.5 A

600V N-Channel MOSFET

TO-220

FEATURES
Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

1.Gate 2. Drain 3. Source

Very Low Intrinsic Capacitances

Excellent Switching Characteristics
Unrivalled Gate Charge : 22 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.96 (Typ.) @VGS=10V
100% Avalanche Tested

Absolute Maximum Ratings

Symbol

TC=25 unless otherwise specified

Parameter

Value

Units

600

VDSS

Drain-Source Voltage

ID

Drain Current

Continuous (TC = 25)

7.5

Drain Current

Continuous (TC = 100)

4.6

IDM

Drain Current

Pulsed

30

VGS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

230

mJ

IAR

Avalanche Current

(Note 1)

7.5

EAR

Repetitive Avalanche Energy

(Note 1)

14.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25)

- Derate above 25

147

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

(Note 1)

1.18

W/

-55 to +150

300

Thermal Resistance Characteristics

Typ.

Max.

RJC

Symbol
Junction-to-Case

Parameter

--

0.85

RCS

Case-to-Sink

0.5

--

RJA

Junction-to-Ambient

--

62.5

Units
/W

SEMIHOW REV.A0,Dec 2006

HFP8N60S

Dec 2006

Symbol

Parameter

unless otherwise specified

Test Conditions

Min

Typ

Max

Units

On Characteristics
VGS
RDS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250

2.5

--

4.5

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 3.75 A

--

0.96

1.2

600

--

--

ID = 250 , Referenced to25

--

0.65

--

V/

VDS = 600 V, VGS = 0 V

--

--

VDS = 480 V, TC = 125

--

--

10

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

BVDSS Breakdown Voltage Temperature

Coefficient
/TJ
IDSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250

IGSSF

Gate-Body Leakage Current,

Forward

VGS = 30 V, VDS = 0 V

--

--

100

IGSSR

Gate-Body Leakage Current,

Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

--

940

1220

--

105

135

--

13

17

--

17

45

--

61

130

--

81

170

--

65

140

--

22

29

nC

--

--

nC

--

--

nC

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

VDS = 300 V, ID = 7.5 A,

RG = 25
(Note 4,5)

VDS = 480V, ID = 7.5 A,

VGS = 10 V
(Note 4,5)

Gate-Drain Charge

Source-Drain Diode Maximum Ratings and Characteristics

IS

Continuous Source-Drain Diode Forward Current

--

--

7.5

ISM

Pulsed Source-Drain Diode Forward Current

--

--

30

VSD

Source-Drain Diode Forward Voltage

IS = 7.5 A, VGS = 0 V

--

--

1.4

trr

Reverse Recovery Time

--

365

--

Qrr

Reverse Recovery Charge

IS = 7.5 A, VGS = 0 V
diF/dt = 100 A/s (Note 4)

--

3.4

--

Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.3mH, IAS=7.5A, VDD=50V, RG=25, Starting TJ =25C
3. ISD7.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C
4. Pulse Test : Pulse Width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature

SEMIHOW REV.A0,Dec 2006

HFP8N60S

Electrical Characteristics TC=25 C

HFP8N60S

ID, Drain Current [A]

ID, Drain Current [A]

Typical Characteristics

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

101

3.0

IDR, Reverse Drain Current [A]

RDS(ON) [],
Drain-Source On-Resistance

3.5

2.5

VGS = 10V
VGS = 20V

2.0

1.5

1.0
Note : TJ = 25oC

12

150oC

10-1
0.2

0.5
0

100

16

25oC

0.4

0.6

Note :
1. VGS = 0V
2. 250s Pulse Test

0.8

1.0

1.2

VSD, Source-Drain voltage [V]

ID, Drain Current [A]

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Capacitance [pF]

VGS, Gate-Source Voltage [V]

12

VDS = 120V
VDS = 300V
VDS = 480V

10

2
* Note : ID=7.5A

0
0

12

16

20

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

SEMIHOW REV.A0,Dec 2006

(continued)

1.2

3.0

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

HFP8N60S

Typical Characteristics

1.1

1.0

Note :
1. VGS = 0 V
2. ID = 250A

0.9

0.8
-100

-50

50

100

150

2.5

2.0

1.5

1.0
Note :
1. VGS = 10 V
2. ID = 3.75 A

0.5

0.0
-100

200

-50

100

150

200

Figure 8. On-Resistance Variation

vs Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature
102

50

TJ, Junction Temperature [oC]

TJ, Junction Temperature [oC]

8
Operation in This Area
is Limited by R DS(on)

10 s
100 s
6

ID, Drain Current [A]

1 ms
10 ms
DC 100 ms

100

10-1

* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse

10-2 0
10

101

102

0
25

103

50

75

100

125

150

TC, Case Temperature [oC]

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

100

D=0.5

ZJC(t), Thermal Response

ID, Drain Current [A]

101

0.2
10-1

* Notes :
1. ZJC(t) = 0.85 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)

0.1
0.05
0.02
0.01

PDM

single pulse

-2

10

t1
10-5

10-4

10-3

10-2

10-1

t2
100

101

t1, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve

SEMIHOW REV.A0,Dec 2006

HFP8N60S

Fig 12. Gate Charge Test Circuit & Waveform

50K
12V

VGS

Same Type
as DUT

Qg

200nF

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL

VDS

VDS

90%

VDD
RG

( 0.5 rated VDS )

Vin

DUT

10V

10%

tr

td(on)

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

L
VDS
VDD
ID

BVDSS
IAS

RG

10V

ID (t)
DUT

VDS (t)

VDD
tp

Time

SEMIHOW REV.A0,Dec 2006

HFP8N60S

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT
+
VDS
_
IS
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode
Forward Voltage Drop

SEMIHOW REV.A0,Dec 2006

HFP8N60S

Package Dimension

TO-220 (A)

9.900.20

0.

0
.6

20

4.500.20

6.500.20
9.190.20

2.800.20

1.270.20
1.520.20

1.300.20

2.400.20
3.020.20

13.080.20

15.700.20

0.800.20
2.54typ
2.54typ

0.500.20

SEMIHOW REV.A0,Dec 2006

HFP8N60S

TO-220 (B)

0.20

84

4.570.20

6.300.20

1.270.20

9.140.20

2.740.20

15.440.20

.
3

0
.2

1.270.20
2.670.20

13.280.20

2.670.20

0.810.20
2.54typ
2.54typ

0.400.20

SEMIHOW REV.A0,Dec 2006