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Halogen-Free Product
Advanced Power
Electronics Corp.
D2
D1
D1
BVDSS
-20V
RDS(ON)
45m
ID
-5.6A
S2
S1
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25
ID@TA=70
Rating
Units
-20
+12
-5.6
-4.5
-20
IDM
PD@TA=25
0.016
W/
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
Unit
62.5
/W
1
201009304
AP4955GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-0.01
V/
VGS=-4.5V, ID=-5A
45
VGS=-2.5V, ID=-4A
65
-0.5
-1.2
BVDSS
BVDSS/Tj
RDS(ON)
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-5A
IDSS
VDS=-20V, VGS=0V
-1
uA
-25
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
+100
nA
ID=-5A
19
30
nC
IGSS
Qg
Qgs
Gate-Source Charge
VDS=-16V
nC
Qgd
VGS=-4.5V
nC
VDS=-10V
ns
td(on)
tr
Rise Time
ID=-1A
10
ns
td(off)
RG=3.3,VGS=-10V
52
ns
tf
Fall Time
RD=10
24
ns
Ciss
Input Capacitance
VGS=0V
1400 2240
pF
Coss
Output Capacitance
VDS=-20V
270
pF
Crss
f=1.0MHz
230
pF
Min.
Typ.
IS=-1.6A, VGS=0V
-1.2
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
Max. Units
trr
IS=-5A, VGS=0V,
32
ns
Qrr
dI/dt=100A/s
22
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP4955GM-HF
60
70
-5.0V
T A = 25 C
-4.5V
50
40
-3.0V
30
-5.0V
T A = 150 C
50
60
-2.5V
20
-4.5V
40
30
-3.0V
20
-2.5V
10
10
V G =- 2.0 V
V G =- 2.0 V
0
0
0
1.6
55
I D = -4 A
T A =25 o C
I D =-5A
V G =-4.5V
1.4
Normalized RDS(ON)
RDS(ON) (m)
50
45
40
35
1.2
1.0
0.8
30
0.6
-50
100
150
T j , Junction Temperature ( C)
1.2
-IS(A)
50
T j =150 o C
T j =25 o C
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.2
Reverse Diode
1.4
-50
50
100
150
T j , Junction Temperature ( o C)
AP4955GM-HF
f=1.0MHz
10000
I D =-5A
V DS =-16V
10
C (pF)
12
C iss
1000
C oss
C rss
100
10
20
30
40
50
17
21
25
29
100
10
Operation in this area
limited by RDS(ON)
-ID (A)
13
1ms
10ms
100ms
1s
0.1
T A =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.01
0.1
10
100
0.0001
0.001
0.01
0.1
10
100
1000
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge