Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525DF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCESM

Collector-emitter voltage peak value

VBE = 0 V

VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts

Collector-emitter voltage (open base)

Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time

PINNING - SOT199
PIN

Ths 25 C
IC = 8.0 A; IB = 1.6 A
ICsat = 8.0 A; IB(end) = 1.1 A

PIN CONFIGURATION

TYP.

MAX.

UNIT

1500

8.0
3.0

800
12
30
45
5.0
4.0

V
A
A
W
V
A
s

SYMBOL

DESCRIPTION

base

collector

emitter

case isolated

case

b
Rbe

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period

Ths 25 C

MIN.

MAX.

UNIT

-65
-

1500
800
12
30
8
12
200
9
45
150
150

V
V
A
A
A
A
mA
A
W
C
C

TYP.

MAX.

UNIT

3.7

K/W

2.8

K/W

35

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

without heatsink compound

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

1 Turn-off current.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all

three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

72
7.5
800

110
55
13.5
-

218
-

mA

V
V

5
-

11
7
1.6

5.0
1.1
9.5
2.0

V
V

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

IEBO
Reb
BVEBO
VCEOsust

Emitter cut-off current

Base-emitter resistance
Emitter-base breakdown voltage
Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
hFE
VF

Collector-emitter saturation voltage

Base-emitter saturation voltage
DC current gain
Diode forward voltage

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IB=0A ;Ic = 100mA
L = 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

145

pF

Switching times (32 kHz line

deflection circuit)

ICsat = 8.0 A; LC = 260 H; Cfb = 13 nF;

IB(end) = 1.1 A; LB = 2.5 H; -VBB = 4 V;
(-dIB/dt = 1.6 A/s)

3.0
0.2

4.0
0.35

s
s

IF = 8 A; dIF/dt = 50 A/s

16

VF = 5 V

410

ns

ts
tf

Turn-off storage time

Turn-off fall time

Vfr

Anti-parallel diode forward recovery

voltage
Anti-parallel diode forward recovery
time

tfr

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

ICsat

TRANSISTOR
IC

BU2525DF

+ 150 v nominal
adjust for ICsat

DIODE
t

Lc
IBend

IB

t
10us

D.U.T.

13us

LB

IBend

Cfb

32us
VCE

-VBB

Rbe

Fig.1. Switching times waveforms.

Fig.4. Switching times test circuit.

ICsat

BU2525DF

hFE
100

90 %
IC

Tj = 25 C
Tj = 125 C

5V

10 %
tf

10

ts

1V

IB
IBend

t
1
0.1

10

- IBM

Fig.2. Switching times definitions.

100
IC / A

Fig.5. Typical DC current gain. hFE = f (IC)

parameter VCE

1.2

VBESAT / V

BU2525AF

Tj = 25 C

1.1

Tj = 125 C

10%

0.9

time

t fr
V

0.8
IC/IB=

0.7

0.6

5V
V

fr

0.5

0.4
0.1

time

Fig.3. Definition of anti-parallel diode Vfr and tfr

September 1997

1
IC / A

10

Fig.6. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/IB

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

VCESAT / V

BU2525DF

BU2525AF

Eoff / uJ

1000

IC = 8 A

IC/IB =

0.9

BU2525AF

0.8

0.7

7A

0.6

100

0.5
Tj = 25 C

0.4

Tj = 125 C

0.3
0.2
0.1
0

0.1

10

100

10

0.1

1
IB / A

IC / A

Fig.7. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/IB

1.2

VBESAT / V

Fig.10. Typical turn-off losses. Tj = 85C

Eoff = f (IB); parameter IC; f = 32 kHz

BU2525AF

Tj = 125 C

1
0.9
IC=
0.8

6A
5A
4A

0.6
0

2
IB / A

VCESAT / V

32 kHz

ts

IC =
8A
7A
0.1

Fig.8. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter IC

10

BU2525AF

4
3
2
1
0

8A

0.7

ts, tf / us

12
11
10
9
8
7
6
5

Tj = 25 C

1.1

10

tf

1
IB / A

10

Fig.11. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz

BU2525AF

120

Tj = 25 C

110

Tj = 125 C

100
90

Normalised Power Derating

PD%

with heatsink compound

80
70

8A

60

50

6A

40

5A

30

IC = 4 A

20
10
0

0.1
0.1

1
IB / A

10

40

60

80
Ths / C

100

120

140

Fig.12. Normalised power dissipation.

PD% = 100PD/PD 25C = f (Ths)

Fig.9. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter IC

September 1997

20

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

10

Zth / (K/W)

BU2525DF

BU2525AF

IC / A

BU2525AF

100
tp =

0.5

0.1

0.2
0.1
0.05

ICM

0.02

ICDC

40 us

PD

0.01
D=0
0.001
1E-06

= 0.01

tp

D=

1E-02
t/s

100 us

1E-04

10

tp
T

1E+00

Ptot

Fig.13. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

1 ms

0.1
10 ms
DC

0.01
1

10

100

1000 VCE / V

Fig.14. Forward bias safe operating area. Ths = 25 C

ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525DF

MECHANICAL DATA
Dimensions in mm

15.3 max

Net Mass: 5.5 g

5.2 max

3.1
3.3

0.7
7.3

3.2
o
45

6.2
5.8
21.5
max

seating
plane

3.5 max
not tinned

3.5

15.7
min
1

2.1 max

5.45

3
1.2
1.0

0.7 max
0.4 M

2.0

5.45

Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525DF

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.200

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