Silicon Diffused Power Transistor

2SD1577
GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a

plastic envelope with integrated efficiency diode,primarily for use in switching power circuites of colour
television receivers
TOP-3Fa

QUICK REFERENCE DATA

SYMBOL

VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf

PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time

CONDITIONS
VBE = 0V

Tmb 25
IC = 3.0A; IB =0.8A
f = 16KHz

TYP

ICsat = 3.0A; f = 16KHz

MAX
1500
600
3
6
40
5
1.0

UNIT
V
V
A
A
W
V
A
V
s

LIMITING VALUES
SYMBOL

VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj

PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature

CONDITIONS
VBE = 0V

Tmb 25

MIN
-65
-

MAX
1500
600
3
6

TYP
-

MAX
1.0
2.5

40
150
150

UNIT
V
V
A
A
A
A
W

ELECTRICAL CHARACTERISTICS
SYMBOL

ICE
ICES

PARAMETER
Collector cut-off current

VCEOsust

Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf

Collector-emitter saturation voltages

Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz

CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 3.0A; IB = 0.8A
Ic=3.0A,IB=0.8A
IC = 0.5A; VCE = 5V

5
1.5

3
90

Switching times(16KHz line deflecton circuit)

IC = 0.1A; VCE =10V

VCB = 10V
IC=3A,IB(end)=0.8A,VCC=105V

Turn-off storage time Turn-off fall time

IC=3A,IB(end)=0.8A,VCC=105V

0.7

1.0

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

UNIT
mA
mA

V
V
V
MHz
pF
s
s

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