BFG541 CNV PDF

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541
NPN 9 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors

FEATURES
BFG541
PINNING
High power gain
PIN
Low noise figure
emitter
High transition frequency
base
Gold metallization ensures

excellent reliability.
emitter
collector
DESCRIPTION
lfpage
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
Fig.1 SOT223.
The transistors are mounted in a

plastic SOT223 envelope.
September 1995
Top view
3
MSB002 - 1
NXP Semiconductors
BFG541
QUICK REFERENCE DATA

SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
VCES
collector-emitter voltage
RBE = 0
15
IC
DC collector current
120
mA
mW
Ptot
total power dissipation
up to Ts = 140 C; note 1
650
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.7
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb = 25 C
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 C
15
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb = 25 C
dB
S212
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 C
13
14
dB
noise figure
s = opt; IC = 10 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 C
1.3
1.8
dB
PL1
output power at 1 dB gain

compression
IC = 40 mA; VCE = 8 V; RL = 50
f = 900 MHz; Tamb = 25 C
21
dBm
ITO
third order intercept point
IC = 40 mA; VCE = 8 V; RL = 50
f = 900 MHz; Tamb = 25 C
34
dBm
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
VCES
collector-emitter voltage
RBE = 0
15
VEBO
emitter-base voltage
open collector
2.5
IC
DC collector current
120
mA
Ptot
total power dissipation
650
mW
Tstg
storage temperature
65
150
Tj
junction temperature
175
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
THERMAL RESISTANCE
55 K/W
NXP Semiconductors
BFG541
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 8 V
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
pF
nA
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.7
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb = 25 C
GHz
GUM
maximum unilateral power gain

(note 1)
IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 C
15
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb = 25 C
dB
S212
insertion power gain
Ic = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 C
13
14
dB
noise figure
s = opt; IC = 10 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 C
1.3
1.8
dB
s = opt; IC = 40 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 C
1.9
2.4
dB
s = opt; IC = 10 mA; VCE = 8 V;

f = 2 GHz; Tamb = 25 C
2.1
dB
PL1
output power at 1 dB gain

compression
Ic = 40 mA; VCE = 8 V; RL = 50
f = 900 MHz; Tamb = 25 C
21
dBm
ITO
third order intercept point
note 2
34
dBm
Vo
output voltage
note 3
500
mV
d2
second order intermodulation

distortion
note 4
50
dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
2.
S 21
- dB.
= 10 log --------------------------------------------------------2
2
1 S 11 1 S 22
IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;

fp = 900 MHz; fq = 902 MHz;
measured at f(2pq) = 898 MHz and at f(2pq) = 904 MHz.
3. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 ; Tamb = 25 C;

Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(pqr) = 793.25 MHz
4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 C;
fp = 250 MHz; fq = 560 MHz;
measured at f(pq) = 810 MHz
September 1995
NXP Semiconductors
BFG541
MRA654 - 1
1000
Ptot
MRA655
250
handbook, halfpage
handbook, halfpage
hFE
(mW)
800
200
600
150
400
100
200
50
0
102
0
0
50
100
150
200
101
102
10
IC (mA)
T ( o C)
s
VCE 10 V.
VCE = 8 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
MRA656
1.0
DC current gain as a function of collector

current.
MRA657
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
VCE = 8 V
8
4V
0.6
0.4
4
0.2
0
101
0
0
VCB (V)
12
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Fig.5
Feedback capacitance as a function of

collector-base voltage.
September 1995
10
IC (mA)
102
Transition frequency as a function of

collector current.
NXP Semiconductors
BFG541
In Figs 6 to 9, GUM = maximum power gain; MSG =

maximum stable gain; Gmax = maximum available gain.
MRA658
25
MRA659
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
Gmax
MSG
15
15
GUM
10
Gmax
10
GUM
5
0
0
20
40
80
60
IC (mA)
20
40
80
60
IC (mA)
VCE = 8 V; f = 900 MHz.
VCE = 8 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
Fig.6 Gain as a function of collector current.
MRA660
50
MRA661
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
MSG
GUM
30
30
MSG
20
20
Gmax
Gmax
10
10
0
10
102
103
f (MHz)
0
10
104
IC = 10 mA; VCE = 8 V.
103
f (MHz)
104
IC = 40 mA; VCE = 8 V.
Fig.8 Gain as a function of frequency.
September 1995
102
Fig.9 Gain as a function of frequency.
NXP Semiconductors
BFG541
MEA977
MEA976
20
20
handbook, halfpage
handbook, halfpage
d im
(dB)
30
d2
(dB)
30
40
40
50
50
60
60
70
20
10
30
40
70
50
60
I C (mA)
Fig.10 Intermodulation distortion as a function of

collector current.
MRA666
handbook, halfpage
Fmin
4
30
20
Gass
2000 MHz
C =10 mA
Fmin
10
20
Gass
(dB)
15
(dB)
Gass
10
0
IC (mA)
Fmin
1 10 mA
10
5
40 mA
1000 MHz
900 MHz
500 MHz
40 mA
2000 MHz
Fmin
50
60
I C (mA)
MRA667
handbook, halfpageI
1000 MHz
3
40
Fig.11 Second order intermodulation distortion as

a function of collector current.
Gass
(dB)
f = 900 MHz 15
(dB)
20
10
5
100
0
102
103
f (MHz)
5
104
VCE = 8 V.
VCE = 8 V.
Fig.12 Minimum noise figure and associated

available gain as functions of collector
current.
Fig.13 Minimum noise figure and associated

available gain as functions of frequency.
September 1995
NXP Semiconductors
BFG541
90
handbook, full pagewidth
1.0
1
135
0.8
45
0.5
0.6
G = 13 dB
0.2 G = 14 dB
G = 15 dB
0.2
MS
180
0
Gmax = 15.3 dB
Fmin =
1.3 dB
OPT
0.5
1
0.4
0.2
2
F = 1.5 dB
0.2
F = 2 dB
F = 3 dB
0.5
135
45
1
MRA668
1.0
90
IC = 10 mA; VCE = 8 V;
Zo = 50 ; f = 900 MHz.
Fig.14 Noise circle figure.
90
1.0
1
135
0.8
45
0.5
G = 7 dB
G = 6 dB
MS G = 8 dB
Gmax = 8.5 dB
0.6
0.2
0.4
0.2
180
0.2
0.5
OPT
0.2
Fmin = 2.1 dB
F = 2.5 dB
F = 3 dB
0.5
F = 4 dB
135
45
1
MRA669
90
IC = 10 mA; VCE = 8 V;
Zo = 50 ; f = 2 GHz.
Fig.15 Noise circle figure.
September 1995
1.0
NXP Semiconductors
BFG541
90
1.0
1
135
0.8
45
0.5
0.6
3 GHz
0.2
0.4
0.2
180
0.2
0.5
40 MHz
0.2
0.5
135
45
1
MRA662
90
IC = 40 mA; VCE = 8 V.
Zo = 50 .
Fig.16 Common emitter input reflection coefficient (S11).
90
45
135
40 MHz
180
3 GHz
50
40
30
20
10
135
45
90
MRA663
IC = 40 mA; VCE = 8 V.
Fig.17 Common emitter forward transmission coefficient (S21).
September 1995
1.0
NXP Semiconductors
BFG541
90
135
45
3 GHz
0.5
0.4
0.3
0.2
0.1
40 MHz
180
135
45
90
MRA664
IC = 40 mA; VCE = 8 V.
Fig.18 Common emitter reverse transmission coefficient (S12).
90
1.0
1
135
0.8
45
0.5
0.6
0.2
0.4
0.2
3 GHz
180
0.2
0.5
0.2
40 MHz
0.5
135
45
1
MRA665
IC = 40 mA; VCE = 8 V.
Zo = 50 .
90
Fig.19 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
NXP Semiconductors
BFG541
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
c
y
HE
v M A
b1
Q
A
A1
Lp
bp
e1
w M B
detail X
4 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT
A1
bp
b1
e1
HE
Lp
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
September 1995
REFERENCES
IEC
JEDEC
JEITA
SC-73
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
NXP Semiconductors
BFG541
DATA SHEET STATUS

DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are

not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customers own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for

any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of

their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customers sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customers applications and products planned, as well as
for the planned application and use of customers third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
September 1995
12
NXP Semiconductors
BFG541
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related

to any default, damage, costs or problem which is based
on any weakness or default in the customers applications
or products, or the application or use by customers third
party customer(s). Customer is responsible for doing all
necessary testing for the customers applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customers third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data The Quick reference data is an

extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in

and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors specifications such use shall be solely at
customers own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors standard warranty and NXP
Semiconductors product specifications.
Terms and conditions of commercial sale NXP

Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customers general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
September 1995
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
NXP B.V. 2010

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/03/pp14
Date of release: September 1995

BFG541 CNV PDF

Încărcat de

Informații document

Titlu original

Drepturi de autor

Formate disponibile

Partajați acest document

Partajați sau inserați document

Opțiuni de partajare

Vi se pare util acest document?

Este necorespunzător acest conținut?

Drepturi de autor:

Formate disponibile

BFG541 CNV PDF

Încărcat de

Drepturi de autor:

Formate disponibile

DISCRETE SEMICONDUCTORS

NPN 9 GHz wideband transistor

High power gain

Low noise figure

High transition frequency

Gold metallization ensures

The transistors are mounted in a

NPN 9 GHz wideband transistor

QUICK REFERENCE DATA

total power dissipation

IC = 40 mA; VCE = 8 V; f = 1 GHz;

maximum unilateral power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

IC = 40 mA; VCE = 8 V; f = 2 GHz;

insertion power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

s = opt; IC = 10 mA; VCE = 8 V;

output power at 1 dB gain

third order intercept point

total power dissipation

NPN 9 GHz wideband transistor

collector cut-off current

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 40 mA; VCE = 8 V; f = 1 GHz;

maximum unilateral power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

IC = 40 mA; VCE = 8 V; f = 2 GHz;

insertion power gain

Ic = 40 mA; VCE = 8 V; f = 900 MHz;

s = opt; IC = 10 mA; VCE = 8 V;

s = opt; IC = 40 mA; VCE = 8 V;

s = opt; IC = 10 mA; VCE = 8 V;

output power at 1 dB gain

third order intercept point

second order intermodulation

IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;

3. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 ; Tamb = 25 C;

NPN 9 GHz wideband transistor

Fig.2 Power derating curve.

DC current gain as a function of collector

Feedback capacitance as a function of

Transition frequency as a function of

NPN 9 GHz wideband transistor

In Figs 6 to 9, GUM = maximum power gain; MSG =

VCE = 8 V; f = 900 MHz.

Fig.7 Gain as a function of collector current.

Fig.6 Gain as a function of collector current.

Fig.8 Gain as a function of frequency.

Fig.9 Gain as a function of frequency.

NPN 9 GHz wideband transistor

Fig.10 Intermodulation distortion as a function of

Fig.11 Second order intermodulation distortion as

Fig.12 Minimum noise figure and associated

Fig.13 Minimum noise figure and associated

NPN 9 GHz wideband transistor

handbook, full pagewidth

Fig.14 Noise circle figure.

handbook, full pagewidth

Fig.15 Noise circle figure.

NPN 9 GHz wideband transistor

handbook, full pagewidth

Fig.16 Common emitter input reflection coefficient (S11).

handbook, full pagewidth