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SOLA3540 & SOLA9001

Applied Photovoltaics
Lab Project 1: Solar Cell Modelling, Testing and
Characterisation
Question 1: Solar Cell I-V Curve
a)

Figure 1.1 Solar cell I-V curve


b) Performance parameter of solar cell at standard test condition
Performance Parameter
Voc
Isc
Imp
Vmp
FF

Value (include units)


678.633 mV
4A
3.839 A
583.05 mV
0.82
22.383 %

Voc is the open circuit voltage (voltage when current equals to zero), Isc is the short circuit
current (current where voltage equals to zero), Vmp and Imp is the maximum power voltage
and current respectively (the voltage and current where the output power is maximum).
Fill factor can be calculated by:

=

Efficiency can be calculated by:

Where Pin is the input solar radiation power in standard condition which is 1000 W/m2 or
100mW/cm2. The surface area of the cell is 100 cm2, so the input power is 10000mW.
c)
Jsc = 40 mA/cm2
Jo = 2x10-9 mA/cm2

d)
In comparing different solar cell, area-normalized current is used because the input solar
radiation power that are used to test the cell is also depends on the surface area of the cell. The
larger the cell the larger the power input. And if a larger cell gives the same total output current
than a smaller cell under standard test condition, then we can say that the larger cell is worse
than the smaller cell in terms of output current.
Question 2: Effect of Series and Shunt Resistance
b) Effect of series resistance. Series resistance varies from 0 to 0.04 ohm with 0.01 ohm
increment.

Figure 2.1. I-V curve of the solar cell with the effect of series resistance Rs (from right to left
Rs value varies from 0 to 0.04 ohm)
As we can see from the figure, the presence of series resistance in a solar cell will lower the
value of maximum power that can be generated by the cell. We can see that Voc is relatively
stable while Isc is slightly lower with low value of Rs.

c) Effect of series resistance. Series resistance varies from 0.05 to 0.2 ohm with 0.05 ohm
increment.

Figure 2.2. I-V curve of the solar cell with the effect of series resistance Rs (from right to left
Rs value varies from 0.05 to 0.2 ohm)
As we can see from figure 2.2, if the series resistance in a cell gets higher, the maximum power
that the cell can generate is further lower. We can also observe that the short circuit current is
severely decreased with high value of series resistance while the Voc is still unchanged.

d) Values of short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmp), fill
factor (FF), and efficiency () with respect of series resistance change.
Rs ()

Isc (A)

0
0.01
0.02
0.03
0.04
0.05
0.10
0.15
0.2

4
4
3.999
3.999
3.998
3.998
3.996
3.87
3.17

Voc (mV) Pmp (W)


678.693
678.693
678.698
678.694
678.697
678.699
678.701
678.702
678.702

2.25
2.11
1.97
1.83
1.69
1.56
1.02
0.72
0.55

FF

0.83
0.78
0.73
0.67
0.62
0.57
0.38
0.27
0.26

22.55
21.10
19.68
18.27
16.91
15.60
10.21
7.20
5.51

e) As Rs is increased:
Isc decreases
Voc remains unchanged
Pmp decreases
FF decreases
decreases
The effect of series resistance on the solar cell parameter can be explained using the
equivalent circuit of solar cell given in figure 2.3.

Figure 2.3 Equivalent circuit of solar cell


From figure 2.3 we can see that in the presence of the series resistance Rs, in open circuit
condition, there is no voltage drop across the series resistance so the open circuit voltage will
remain the same regardless of the value of the series resistance. When the output terminal is
connected to a load, there will be voltage drop across the series resistance thus the voltage
across the load will decrease in proportional to the series resistance applied. Larger the series
resistance, the larger the decrease in load terminal output. Thus the fill factor will decrease in
the presence of series resistance. Moreover, when current flow through the series resistance,
some of the power will then dissipated by the series resistance. This will cause the maximum
power that can be delivered to the load decreases. Because the maximum power decrease, then
the efficiency of the solar cell will also decrease. Finally, when the output terminal is short
circuited, assuming that the diode voltage is constant, the increase in series resistance will
decrease the short circuit current.
f)
Series resistance of a solar cell is an intrinsic characteristic of a solar cell. It depends on the
cell bulk material and manufacturing, including the metal contact manufacturing. Two identical
solar cell that are build using the same bulk material and manufacturing will have very simillar
series resistance value regardless of the surface area.
h) Effect of shunt resistance. Shunt resistance varies from 100 to 0.316 ohm using logarithmic
scale with two values per decade increment.

Figure 2.4. I-V curve of the solar cell with the effect of shunt resistance Rsh (from right to
left Rsh value varies from 100 to 0.316 ohm)

As we can see from the figure, the presence of shunt resistance in a solar cell will also lower
the value of maximum power that can be extracted from the cell. We can see that Isc is
relatively stable while Voc decreases with the decrease value of Rsh.
i) Values of short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmp), fill
factor (FF), and efficiency () with respect of shunt resistance change
RSH()

Isc (A)

100
31.6
10
3.16
1
0.316

4.00
4.00
4.00
3.99
4.00
3.99

Voc (mV) Pmp (W)


678.69
678.59
678.26
677.18
673.53
657.93

2.24
2.23
2.21
2.13
1.90
1.22

FF

0.83
0.82
0.81
0.79
0.71
0.46

22.40
22.32
22.09
21.35
19.01
12.16

j)
As RSH is decreased:
Isc remains unchanged
Voc decreases
Pmp decreases
FF decreases
decreases
From figure 2.3 we can see that in the presence of the shunt resistance Rsh, in short circuit
condition, the current will primarily flow through the short-circuited path, so the short circuit
current will remain the same regardless of the value of the shunt resistance. When the output
terminal is connected to a load, some of the current will flow through the shunt resistance thus
the current that flow through the load will decrease inversely proportional to the shunt
resistance. Smaller the shunt resistance, the larger the decrease in load current. Thus the fill
factor will decrease in the presence of shunt resistance. Moreover, when current flow through
the shunt resistance, some of the power will then dissipated by the series resistance. This will
cause the maximum power that can be delivered to the load decreases. Because the maximum
power decrease, then the efficiency of the solar cell will also decrease. Finally, when the output
terminal is open circuited, the current will flow primarily through the shunt resistance, the
decrease in shunt resistance will decrease the open circuit voltage.
Question 3: Effect of Temperature
b) Effect of temperature. Temperature varies from 0 to 80 degree celcius using 20-degrees
increment.

Figure 3.1 I-V curve of the solar cell with the effect of temperature (from right to left
temperature varies from 0 to 80 degree celcius)
From figure 3.1 we can see that the open circuit voltage, together with the maximum power of
a solar cell decrease when the temperature increases.

c) Values of short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmp),
fill factor (FF), and efficiency () with respect of temperature change
Temp (C)

Voc (mV)

Isc (A)

Pmp (W)

FF

Efficiency (%)

0
20
40
60
80
STC (25)

727.22
688.49
649.06
608.95
568.24
678.633

4.00
4.00
4.00
4.00
4.00
4.00

2.45
2.28
2.11
1.94
1.77
2.239

0.84
0.83
0.81
0.80
0.78
0.82

24.52
22.83
21.11
19.38
17.66
22.39

d) Relation between temperature and open circuit (Voc) and fill factor (FF) of a solar cell is:
As T increases:
Voc decreases
FF decreases
e) Open circuit voltage change in respect of temperature is given in figure 3.2.

Figure 3.2 Effect of temperature to solar cell open circuit voltage


dVoc/dT = -1.98 mV/oC
f) Solar cell fill factor change in respect of temperature is given in figure 3.3.

Figure 3.3 Effect of temperature to solar cell fill factor


1/FF dFF/dT = -0.0010/oC
g) Solar cell efficiency change in respect of temperature change is given in figure 3.4.

Figure 3.4 Effect of temperature to solar cell efficiency

1
= 0.0038/
25
Table below gives the comparison of solar cell performance change due to temperature
change between Microcap simulation and the theoretical value.
Slope Microcap
Normalised slope Microcap
Normalised slope
textbook [1]

Voc (V)
-1.98 mV/oC

FF
-0.00082/oC

Eff
-0.0857/oC

-0.0029 mV/oC

-0.0010/oC

-0.0038/oC

-0.003 mV/oC

-0.00082/oC

-0.0857/oC

From the simulation on effect of temperature to the performance of solar cell we found that the
performance of solar cell inversely proporsional to the cell temperature. The open circuit
voltage, fill factor and efficiency of the cell decrease as the temperature rises. From the
simulation, short circuit current stays the same although in reality short circuit current will vary
slightly proporsional to the cell temperature. We also can observe that the rate of change found
from Microcap simulation has the value near to the theoretical value.
i) Power loss due to temperature rise. Operating temperature is 60 oC or 35 oC temperature
difference.
1 1
=
= 0.0038/


= 0.0038
= 0.0038/ 35
= 0.133
For maximum power equals to 2.239 W, the power loss will be 0.297 W or 13% decrease.
Question 4: Effect of Incident Light Intensity
b) Effect of incident light intensity. Incident light intensity which represented by the current
source varies from 0 to 5 Amperes with 1 Ampere increment.

Figure 4.1 I-V curve of the solar cell with the effect of incident light intensity (from right to
left incident light current varies from 5 to 0 Ampere)

c) Values of short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmp),
fill factor (FF), and efficiency () with respect of incident light intensity change
IL (A)
1
2
3
4
5

Voc (mV)
639.16
659.02
670.54
678.69
685.01

Isc (A)
1.00
2.00
3.00
4.00
5.00

Pmp (W)
0.52
1.09
1.66
2.24
2.83

FF
0.82
0.82
0.82
0.83
0.82

(%)
20.93
21.70
22.12
22.40
22.60

d) Solar cell short circuit current density change for different type of cells in respect of
incident light intensity is given in figure 4.2

Figure 4.2 Short circuit current density VS incident light intensity for different type of cell
Solar cell open circuit voltage for different type of cells in respect of incident light intensity is
given in figure 4.3

Figure 4.3 Open circuit voltage VS incident light intensity for different type of cell
Solar cell open circuit voltage for different type of cells in respect of incident light intensity is
given in figure 4.4

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Figure 4.4 Fill factor VS incident light intensity for different type of cell
Solar cell efficiency for different type of cells in respect of incident light intensity is given in
figure 4.5

Figure 4.5 Efficiency VS incident light intensity for different type of cell
e) As we can see from figure 4.5, cell B which has low shunt resistance and low series resistance
will be most affected by low intensity light because with low shunt and low light intensity, the
portion of the current being diverted through the shunt resistance is higher.

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Part 2: Measurement of Solar Cells


Question 5: Measurement of I-V Curves and Spectral Response
a) Figure 5.1 shows the I-V curve of a test cell under different light intensity, 1 sun and 0.9
sun.

Figure 5.1 Test cell I-V curve under different light intensity
i) From figure 5.1 we can see that there is discrepancy on the I-V curve of a same test cell
caused by different light intensity exposed to the cell. Higher light intensity will give a higher
value of short circuit current (Isc) and open circuit voltage (Voc).
ii) The discrepancy on current is larger than on voltage because for a solar cell under
illumination, the current generated has strong relation with light intensity while the voltage has
weak (logarithmic) relation with light intensity.
b)
Performance Parameter
Jsc
Voc
FF

Value (include units)


35.74 mA/cm2
628.3 mV
0.79
18%

c)
Voc1= 628.3 mV
Isc1= 357.44 mA
Voc2= 625.2 mV
Isc2= 321.44 mA
n = 1.14
d)
Slope near JSC = -0.01
Rsh = 100 Ohm

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Slope near VOC = -28.15


Rs = 0.035 Ohm
e)
Central position:
Voc = 628.3 mV
Jsc = 35.74 mA/cm2
FF = 0.79

Cell moved from centre


Voc = 616.3 mV
Jsc = 21.37 mA/cm2
FF = 0.8

They are different because the light source or the solar tester does not have a good light
uniformity. The light emitted from the centre of the tester is higher in terms of intensity
compared to the other sides so the short circuit current and open circuit voltage of a same cell
is higher when it is positioned at the centre of the tester than when its position is deviated from
the centre.

Question 6: Effect of Temperature


a) Comparison of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), and
efficiency of a tested cell under different cell temperature.
T (C)
Voc (mV)
Isc (mA)
FF

16.5
25
35
45
55
Slope
Normalised slope
APV normalised slope

672.200
660.600
645.100
626.500
605.000
-1.7 mV/oC
-0.0026 /oC
-0.003 /oC

385.10
387.10
389.99
391.70
392.42
0.19 mA/oC
0.0005 /oC
0.0006 /oC

0.80
0.79
0.79
0.77
0.76
-0.00082/oC
-0.00105 /oC
-0.0015 /oC

21%
20%
20%
19%
18%
0.063 %/oC
0.0032 /oC
-(0.004~0.005) /oC

From the table above we can see that with the increase of temperature, the open circuit voltage
decreases, the short circuit current slightly increases, the fill factor decreases and the efficiency
of the cell is also decreases as expected.
b) If the solar cell is illuminated with monochromatic light with photon energy higher than the
band gap energy at STC (e.g. blue light), the increase of temperature over STC temperature
will not affect the short circuit current generated by the cell because the amount of electronhole pairs generated is unchanged if the number of monochromatic photon is unchanged. The
short circuit current will only be affected by the number of photon incident to the cell.
c) The rise of cell temperature will cause the band gap energy of the cell material (i.e. silicon)
to decrease. This will cause lower energy photon or longer wavelength monochromatic
light that previously was not absorbed by silicon material has the chance to be absorbed
and create electron-hole pairs when temperature of the cell rises. Hence, for a
monochromatic light which have wavelength longer than the band gap energy wavelength
at STC, if the cell temperature is increased, the short circuit current will increase from zero
to some amount of current. But for a monochromatic light which have wavelength shorter
than the band gap energy wavelength at STC, if the cell temperature is increased from STC,
the short circuit current generated will stay unchanged.

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References
[1]

A. Wenham, Stuart R.; Green, Martin A.; Watt, Muriel E.; Corkish, Richard; Sproul,
Applied Photovoltaics, 3rd ed. New York: Taylor and Francis, 2013.

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