2SK3868

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)

2SK3868
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: R DS (ON) = 1.3 (typ.)

High forward transfer admittance: |Yfs| = 3S (typ.)
Low leakage current: IDSS = 100 A (V DS = 500 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

V DSS

500

Drain-gate voltage (RGS = 20 k)

V DGR

500

Gate-source voltage

V GSS

30

ID

IDP

20

Drain power dissipation (Tc = 25C)

PD

35

Single pulse avalanche energy

(Note 2)

EA S

180

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

3.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

(Note 1)

Pulse (t = 1 ms)
(Note 1)

A
1: Gate
2: Drain
3: Source

JEDEC

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.57

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 12.2 mH, IAR = 5 A, R G = 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.
3

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2SK3868
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

V GS = 25 V, V DS = 0 V

10

V (BR) GSS

IG = 10 A, V DS = 0 V

30

IDSS

V DS = 500 V, V GS = 0 V

100

V (BR) DSS

ID = 10 mA, V GS = 0 V

500

V th

V DS = 10 V, ID = 1 mA

2.0

4.0

Drain-source ON resistance

RDS (ON)

V GS = 10 V, ID = 2.5 A

1.3

1.7

Forward transfer admittance

Yf s

V DS = 10 V, ID = 2.5 A

1.5

3.0

Input capacitance

Ciss

550

Reverse transfer capacitance

Crss

Output capacitance

Coss

70

ID = 2.5 A V OUT

10

RL =
90

20

10

50

16

10

Gate leakage current

Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdow n voltage
Gate threshold voltage

Rise time

V DS = 25 V, V GS = 0 V, f = 1 MHz

tr

10 V
V GS
0V

Turn-on time

ton

Fall time

tf

15

Switching time

Turn-off time

V DD
225 V
Duty <
1%,
t
=
10
s
=
w

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

V DD
400 V, V GS = 10 V, ID = 5 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current

(Note 1)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDR

IDRP

20

V DSF

IDR = 5 A, V GS = 0 V

1.7

Reverse recovery time

trr

IDR = 5 A, V GS = 0 V,

150

ns

Reverse recovery charge

Qrr

dIDR /dt = 100 A/s

0.3

Forward voltage (diode)

Marking

K3868

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3868

ID V DS

ID V DS
10

10

COMMON SOURCE
Tc = 25C
PULSE TEST

5.25

4.75
4.5

10

COMMON SOURCE
Tc = 25C
PULSE TEST

5.5

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

6
5.5
4

5.25

4.75
4.5
VGS = 4 V

VGS = 4 V
0
0

10

DRAIN-SOURCE VOLTAGE VDS

0
0

12

(V)

ID V GS
DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

VDS = 20 V
25

6
Tc = 55C
4
100

0
0

GATE-SOURCE VOLTAGE VGS

10

Tc = 25
PULSE TEST

16

12

ID = 5 A

2.5

1.2
0
0

12

16

GATE-SOURCE VOLTAGE VGS

20

(V)

RDS (ON) ID
10

COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)

FORWARD TRANSFER ADMITTANCE

Yfs (S)

(V)

COMMON SOURCE

Yf s ID
VDS = 20 V
PULSE TEST
Tc = 55C

0.1
0.1

24

20

(V)

10

20

V DS V GS

COMMON SOURCE

PULSE TEST

16

DRAIN-SOURCE VOLTAGE VDS

10

12

100

25

10

COMMON SOURCE
Tc = 25C
PULSE TEST

VGS = 10 V 15V
1

0.1
0.01

0.1

10

DRAIN CURRENT DI (A)

DRAIN CURRENT DI (A)

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RDS (ON) Tc

IDR V DS
10

COMMON SOURCE

DRAIN REVERSE CURRENT ID R

(A)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )

5
VGS = 10 V
PULSE TEST

ID = 5A
2.5

2
1.2
1

0
0

40

80

120

COMMON SOURCE
Tc = 25C

PULSE TEST
3

0.5

10

0.3

3
VGS = 0, 1,1 V

0.1
0

160

CASE TEMPERATURE Tc (C)

0.4

0.8

1.2

1.6

2.0

DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE V DS

V th Tc

10000

Ciss

100

Coss

10 COMMON SOURCE
VGS = 0 V

Crss

f = 1 MHz
Tc = 25C
1
0.1

10

30 50

PULSE TEST
3

40

40

80

120

DRAIN-SOURCE VOLTAGE VDS (V)

CASE TEMPERATURE Tc (C)

PD Tc

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN POWER DISSIPATION

PD (W)

ID = 1 mA

0
80

100

50

40

30

20

10

0
0

VDS = 10 V
4

40

80

120

160

200

500

16

VDD = 100 V

300

400

12

200
200

8
COMMON SOURCE
VGS

100

ID = 5 A

Tc = 25C
PULSE TEST
0
0

CASE TEMPERATURE Tc (C)

20

VDS

400

160

10

15

20

GATE-SOURCE VOLTAGE VGS (V)

1000

GATE THRESHOLD VOLTAGE

Vth (V)

CAPACITANCE C (pF)

COMMON SOURCE

0
25

TOTAL GATE CHARGE Qg (nC)

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NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

r th tw
10

Duty=0.5
0.2

0.1

0.1
0.05
0.02

PDM
t

SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 3.57C/W
0.001
10

100

10

100

10

PULSE WIDTH tw (s)

SAFE OPERATING AREA

EA S Tch

100

200

AVALANCHE ENERGY
EAS (mJ)

DRAIN CURRENT ID (A)

ID max ( PULSED) *
100 s *

10
ID max ( CONTINUOUS) *
1 ms *

DC OPERATION
Tc = 25C

160

120

80

40

SINGLE NONREPETITIVE

0.1

PULSE

0
25

Tc=25

50

75

100

125

150

CURVES MUST BE DERATED

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

LINEARLY WITH INCREASE IN

0.01
1

VDSS max

TEMPERATURE.

10

100

1000

DRAIN-SOURCE VOLTAGE VDS (V)

BVDSS

15 V

IAR

15 V
V DD
TEST CIRCUIT
RG = 25
V DD = 90 V, L = 12.2mH

V DS

WAVE FORM
? AS =

1
2

BVDSS
L I2
B
VDSS VDD

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2SK3868

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, indus trial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2004-07-01

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