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2SC5815
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit
2.1
type transistor.
0.65
0.65
2.0
1.3
FEATURE
1.25
0.425
0.3
0.425
0.15
00.1
APPLICATION
0.7
0.9
JEITASC-70
TERMINAL CONNECTER
BASE
EMITTER
COLLECTOR
MAXIMUM RATINGSTa=25
Symbol
Parameter
Ratings
Unit
60
VCBO
VEBO
VCEO
60
Collector current
125
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
150
Tstg
Storage temperature
-55150
MARKING
TYPE NAME
ITEM
ELECTRICAL CHARACTERISTICSTa=25
Parameter
Symbol
Limits
Test conditions
Max
Unit
V(BR)CEO
60
ICBO
CB=60V, I E=0mA
0.5
IEBO
EB
=4V, I C=0mA
0.5
hFE
CE
120
560
hFE
CE=6V, I C=0.1mA
70
C to E Saturation voltage
VCE(sat)
0.3
200
MHz
1.5
pF
BE
Typ
C to E breakdown voltage
I C=1uA ,R
Min
=6V, I C=1mA
I C=30mA ,IB=1.5mA
fT
CE
Cob
=6V, I E=-10mA
CB=6V, I E=0mA,f=1MHz
Marking
Q
120270
EQ
R
180390
ER
S
180390
ES
Item
Marking
E
150300
EE
F
250500
EF
Jul.2014
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