Low Noise Transistors

BC559, B, C
BC560C

PNP Silicon
MAXIMUM RATINGS
Rating

Symbol

BC559

BC560

Unit

CollectorEmitter Voltage

VCEO

30

45

Vdc

CollectorBase Voltage

VCBO

30

50

Vdc

EmitterBase Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watt
mW/C

TJ, Tstg

55 to +150

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

200

C/W

Thermal Resistance, Junction to Case

RJC

83.3

C/W

Operating and Storage Junction

Temperature Range

1
2

CASE 2904, STYLE 17

TO92 (TO226AA)

THERMAL CHARACTERISTICS
COLLECTOR
1
2
BASE
3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

30
45

30
50

5.0

Vdc

15
5.0

nAdc
Adc

15

nAdc

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 10 Adc, IE = 0)

V(BR)CEO
BC559
BC560
V(BR)CBO
BC559
BC560

EmitterBase Breakdown Voltage

(IE = 10
Adc, IC = 0)

V(BR)EBO

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = +125C)

ICBO

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

Semiconductor Components Industries, LLC, 2001

February, 2001 Rev. 2

Vdc

Vdc

Publication Order Number:

BC559/D

BC559, B, C BC560C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Typ

Max

Unit

100
100
180
380
120

150
270
290
500

460
800
800

0.075
0.3
0.25

0.25
0.6

1.1

0.55

0.52
0.55
0.62

0.7

fT

250

MHz

Ccbo

2.5

pF

240
450

330
600

500
900

0.5

2.0
10

ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE
BC559B
BC559C/560C
BC559B
BC559C/560C
BC559

CollectorEmitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

VBE(sat)

BaseEmitter On Voltage
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 100 Adc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

Vdc

Vdc
Vdc

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

hfe
BC559B
BC559C/BC560C

Noise Figure
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz)
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz)
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 s Duty cycle = 2%.

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2

dB
NF1
NF2

BC559, B, C BC560C
-1.0
VCE = -10 V
TA = 25C

1.5

-0.9

1.0
0.8
0.6
0.4

VBE(sat) @ IC/IB = 10

-0.7

VBE(on) @ VCE = -10 V

-0.6
-0.5
-0.4
-0.3
-0.2

0.3

VCE(sat) @ IC/IB = 10

-0.1
0.2
-0.2

-0.5

0
-0.1

-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

-0.2

-0.5 -1.0 -2.0

-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)

-50

-100

Figure 2. Saturation and On Voltages

10

400
300

7.0

100
80
60

C, CAPACITANCE (pF)

200

VCE = -10 V
TA = 25C

40
30

TA = 25C

Cib

5.0

3.0

Cob

2.0

20

-0.5 -0.7 -1.0

-2.0
-5.0 -7.0 -10
-20
IC, COLLECTOR CURRENT (mAdc)

1.0
-0.4 -0.6

-50

-1.0

-2.0
-4.0
-10
VR, REVERSE VOLTAGE (VOLTS)

Figure 3. CurrentGain Bandwidth Product

r b, BASE SPREADING RESISTANCE (OHMS)

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

TA = 25C

-0.8
V, VOLTAGE (VOLTS)

hFE, NORMALIZED DC CURRENT GAIN

2.0

Figure 4. Capacitance

170
160
150
VCE = -10 V
f = 1.0 kHz
TA = 25C

140
130
120
-0.1

-0.2

-0.5
-1.0
-2.0
IC, COLLECTOR CURRENT (mAdc)

-5.0

Figure 5. Base Spreading Resistance

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3

-10

-20

-40

BC559, B, C BC560C
PACKAGE DIMENSIONS
CASE 02904
(TO226AA)
ISSUE AD
A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

D
J

X X
G
H
V

SECTION XX

N
N

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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BC559/D