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  • Junctions:: Capacitance and Secondary Effects

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    KapilAgrawal
    10 vizualizări11 pagini
    The document discusses different types of capacitance in p-n junctions including junction capacitance and charge storage capacitance. Junction capacitance is dominant under reverse bias, also known as depletion capacitance. Charge storage capacitance is dominant under forward bias, also known as diffusion capacitance. An example problem is shown to calculate the doping concentration of a p-n junction using the slope and intercept of a capacitance-voltage plot. Secondary effects of contact potential on carrier injection in heavily doped diodes are also discussed. Graded junctions are described where the doping profile is defined and equations are given for junction voltage, electric field, and capacitance as a function of applied voltage.

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    Lecture-22-ED.pdf

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    The document discusses different types of capacitance in p-n junctions including junction capacitance and charge storage capacitance. Junction capacitance is dominant under reverse bias, also known as depletion capacitance. Charge storage capacitance is dominant under forward bias, also known as diffusion capacitance. An example problem is shown to calculate the doping concentration of a p-n junction using the slope and intercept of a capacitance-voltage plot. Secondary effects of contact potential on carrier injection in heavily doped diodes are also discussed. Graded junctions are described where the doping profile is defined and equations are given for junction voltage, electric field, and capacitance as a function of applied voltage.

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    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    10 vizualizări11 pagini

    Junctions:: Capacitance and Secondary Effects

    Încărcat de

    KapilAgrawal
    The document discusses different types of capacitance in p-n junctions including junction capacitance and charge storage capacitance. Junction capacitance is dominant under reverse bias, also known as depletion capacitance. Charge storage capacitance is dominant under forward bias, also known as diffusion capacitance. An example problem is shown to calculate the doping concentration of a p-n junction using the slope and intercept of a capacitance-voltage plot. Secondary effects of contact potential on carrier injection in heavily doped diodes are also discussed. Graded junctions are described where the doping profile is defined and equations are given for junction voltage, electric field, and capacitance as a function of applied voltage.

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    din 11

    CHAPTER- 5

    JUNCTIONS: CAPACITANCE AND


    SECONDARY EFFECTS

    Lecture 22

    EEE F214

    Dr. Navneet Gupta

    Capacitance of p-n junctions


    Capacitance
    Junction Capacitance
    1

    Due to dipole in SCR

    Dominant under reverse


    bias

    Also known as Depletion


    capacitance

    Charge storage Capacitance


    1

    Due to charge storage


    effect

    Dominant under forward


    bias

    Also known as Diffusion


    capacitance

    Dr. Navneet Gupta

    Example
    The slope of the line in fig. is 2 x 1023 F-2V-1, the
    intercept is 0.84 V. and the area of the PN junction is 1
    m2. Find the doping concentration of the pn junction
    (Assume Si material at 300 K)

    Dr. Navneet Gupta

    Varactor Diode

    Figure: Impurity profiles for hyperabrupt,


    one-sided abrupt, and one-sided linearly
    graded junctions.
    Dr. Navneet Gupta

    Secondary Effects
    1. Effects of contact potential on carrier injection
    Heavily doped diodes

    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Dr. Navneet Gupta

    EEE C381

    Dr. Navneet Gupta

    10

    Graded Junction

    Doping profile: Nd Na = Gx
    = q (Nd Na )
    Using Poissons Equation:

    V
    E
    Vj =V0-V== qGW3/12
    Cj =A/W ; Cj proportional to (V0-V) -1/3

    Dr. Navneet Gupta

    11

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