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  • Metal-Semiconductor Junctions

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    KapilAgrawal
    9 vizualizări15 pagini
    This document summarizes metal-semiconductor junctions, including: 1) It describes the basic terms related to metal-semiconductor junctions such as vacuum level, work function, and electron affinity. 2) It explains how the energy bands are aligned after a metal and semiconductor are joined, resulting in either a rectifying or ohmic contact depending on whether there is a barrier to current flow. 3) It discusses the charge distribution and electric field profile that forms at a metal-semiconductor junction and how current flows by thermionic emission under forward and reverse bias conditions.

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    This document summarizes metal-semiconductor junctions, including: 1) It describes the basic terms related to metal-semiconductor junctions such as vacuum level, work function, and electron affinity. 2) It explains how the energy bands are aligned after a metal and semiconductor are joined, resulting in either a rectifying or ohmic contact depending on whether there is a barrier to current flow. 3) It discusses the charge distribution and electric field profile that forms at a metal-semiconductor junction and how current flows by thermionic emission under forward and reverse bias conditions.

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    9 vizualizări15 pagini

    Metal-Semiconductor Junctions

    Încărcat de

    KapilAgrawal
    This document summarizes metal-semiconductor junctions, including: 1) It describes the basic terms related to metal-semiconductor junctions such as vacuum level, work function, and electron affinity. 2) It explains how the energy bands are aligned after a metal and semiconductor are joined, resulting in either a rectifying or ohmic contact depending on whether there is a barrier to current flow. 3) It discusses the charge distribution and electric field profile that forms at a metal-semiconductor junction and how current flows by thermionic emission under forward and reverse bias conditions.

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    din 15

    Chapter- 5

    Junctions: MetalSemiconductor junctions

    EEE F214/INSTR F214


    Lecture 23
    DR. NAVNEET GUPTA

    Metal-Semiconductor Junctions
    Basic Terms
    Vacuum level
    Workfunction (q)
    Electron affinity ()

    Isolated metal
    Dr. Navneet Gupta

    After Joining

    Dr. Navneet Gupta

    Isolated metal
    Dr. Navneet Gupta

    After Joining

    Dr. Navneet Gupta

    Rectifying Contact

    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Charge and field distribution for M-S contacts

    Figure (a) Charge distribution and


    (b) electric-field distribution in a
    metal-semiconductor contact.

    Dr. Navneet Gupta

    Conduction Mechanisms

    Figure Current transport by the thermionic emission process.


    (a) Thermal equilibrium; (b) forward bias; and (c) reverse bias.
    Dr. Navneet Gupta

    J J sm J ms

    e
    1

    2 q B / kT

    J AT e
    *

    J Jo e

    qV / kT

    qV / kT

    I-V characteristics of the Schottky barrier junction is


    similar to the pn junction diode. The current mechanism
    here, however, is due to the flow of majority carrier
    electrons

    Dr. Navneet Gupta

    10

    Comparison of the Schottky diode and pn


    junction diode
    Frequency response
    Switching characteristics

    Dr. Navneet Gupta

    11

    Ohmic contacts

    EEE C381

    Dr. Navneet Gupta

    12

    EEE C381

    Dr. Navneet Gupta

    13

    Fermi Level pinning

    EEE C381

    Dr. Navneet Gupta

    14

    Example
    Calculate the theoretical barrier height, built-in potential
    barrier, and maximum electric field in a metalsemiconductor diode for zero applied bias. Consider a
    contact between tungsten and n-type silicon doped to Nd
    = 1016 cm-3 at T = 300 K.

    EEE C381

    Dr. Navneet Gupta

    15

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