Integrated Circuit Biasing

and Active Loads

Part 4
Chapter 10
Reference: Neamen 4th ed.

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MOSFET Current Sources

Learning Outcome:
o To analyze and design a basic two-transistor
MOSFET current-source circuit with additional
MOSFET devices in the reference portion of the
circuit to obtain a given bias current.
o To analyze and design more sophisticated MOSFET
current-source circuits, such as the cascode
circuit, Wilson circuit, and wide-swing cascode
circuit.
o To analyze the output resistance of the various
MOSFET current-source circuits and design a
MOSFET current source circuit to obtain a
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specified output resistance.

4.0) FET Integrated Circuit Biasing

Field-effect transistor (FET) ICs are biased with current
sources in the same way as bipolar circuits.
Problem-Solving Technique
Analyse the reference side of the circuit to determine
gate-to-source voltages. Using these gate-to-source
voltages, determine the bias current in terms of the
reference current.
To find the output resistance, place a test voltage at the
output node and analyse the small-signal equivalent
circuit. Keep in mind that the reference current is
constant, which may make some of the gate voltages
constant or at ac ground.

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.1) Current
Relationship
M1 is always
biased in saturation
region as the
drain and gate
terminals of
enhancement-mode
M1 are connected.
Figure 10.16: Basic two-transistor NMOS
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MOSFET current source

4.1)
4.1)Basic
BasicTwo-Transistor
Two-TransistorMOSFET
MOSFET
Current
CurrentSource
Source
4.1.1) Current Relationship
Assuming = 0;

= 1 ( 1 )2
Which determines in (10.41)

= 1 +

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.1) Current Relationship
o For the drain current to be independent of D-S
voltage (for = 0), transistor M2 should always be
biased in the saturation region.
o The load current is:

= 2 2

Therefore (10.43):

= 2

+ 1 + 2

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.1) Current Relationship
If M1 and M2 are identical transistors, we have these
assumption.

VTN1 = VTN2
Kn1 = Kn2

Hence,

IO = IREF (10.44)

Note: There is no gate current in MOSFETs, both load

current and reference current are identical: as such
the two transistors are matched.
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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.1) Current Relationship
o The relationship between IO and IREF changes if
the width-to-length ratios, or aspect ratios, of the
2 transistors change.
o If the transistors are matched except for the aspect
ratios:

( )2

( )1

(10.45)

This provides designers versatility in their circuit

designs.
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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.2) The Output Resistance, rO
o Stability of Io as a function of VDS is an important
consideration in many applications.
o Taking into account the finite output resistance of
both transistors, i.e. 0:
= 2 2
And
= 1 1
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1 + 1 2

1 + 1 1
9

4.1) Basic Two-Transistor MOSFET

Current Source
4.1.2) The Output Resistance, rO
o Since transistors in the current mirror are processed on
the same IC, all physical parameters, such as VTN, n,
Cox, and , are essentially identical for both devices.
o Thus, taking the ratio of IO to IREF will produce

( )2

( )1

(1+2 )
.
(1+1 )

(10.47)

which is a function of aspect ratios, , and VDS

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.2) The Output Resistance, rO

o The stability of IO can be described in terms of the

output resistance.
o For a given IREF , VDS1 = VGS1 = constant.
o Normally, VDS1 = VGS1 << 1, and if (W/L)2 = (W/L)1 ,
then the change in bias current with respect to a
change in VDS2 is
1

= =

1
2

(10.48)

where rO2 is the output resistance of M2

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.2) The Output Resistance, rO
It is worth noting that as with BJT currentsources circuits, MOSFET current sources
require a large output resistance for
excellent stability.

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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.3) The Reference Current, IREF
o In BJT circuits, the is
generally established by the
bias voltages and a resistor.
o Since MOSFETs can be
configured to act like a
resistor, the IREF in
MOSFET current mirrors is
usually established by
using additional
transistors, e.g. M3.
Figure
10.17: MOSFET current source
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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.3) The Reference Current, IREF
Current mirror in Fig. 10.17 is referred.
Transistors M1 and M3 are in series.
Assuming = 0; we have

1 (1 1 )2 = 3 (3 3 )2
Assuming VTN, n, and Cox are identical in
all transistors,

1 =

( )3

( )1

.3 +
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( )3

( )1

.
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4.1) Basic Two-Transistor MOSFET

Current Source
4.1.3) The Reference Current, IREF
From the circuit, it can be seen that:
VGS1 +VGS3 =V+ -V

Therefore,

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4.1) Basic Two-Transistor MOSFET

Current Source
Finally the load current for = 0, is given by (10.53)

Since the designer has control over the width-tolength ratios of the transistors, there is a
considerable flexibility in the design of MOSFET
current sources.
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