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Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
Qg (Typ.)
150
0.126 at VGS = 10 V
13
9.5 nC
Halogen-free
TrenchFET Power MOSFET
100 % Rg Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK 1212-8
3.30 mm
3.30 mm
S
2
S
3
G
4
D
8
D
6
D
5
Bottom View
N-Channel MOSFET
Symbol
VDS
VGS
TC = 25 C
TC = 70 C
TA = 25 C
TA = 70 C
L = 0.1 mH
TC = 25 C
Continuous Source-Drain Diode Current
TA = 25 C
TC = 25 C
TC = 70 C
Maximum Power Dissipation
TA = 25 C
TA = 70 C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Limit
150
20
13
10.7
3.6b, c
2.9b, c
15
10
5
13
3.2b, c
5.2
33
3.8b, c
2b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
mJ
A
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
C/W
Notes:
a. Based on TC = 25 C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 C/W.
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
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1
Si7620DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 A
150
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = 250 A
VGS(th)
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = 20 V
IDSS
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
V
180
mV/C
-9
2.5
4.5
100
nA
VDS 5 V, VGS = 10 V
13
A
A
RDS(on)
VGS = 10 V, ID = 3.6 A
0.103
gfs
VDS = 15 V, ID = 3.6 A
10
0.126
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
600
VDS = 75 V, VGS = 0 V, f = 1 MHz
50
Crss
15
Qg
9.5
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
td(off)
15
nC
2.5
f = 1 MHz
td(on)
tr
pF
VDD = 75 V, RL = 26
ID 2.9 A, VGEN = 10 V, Rg = 1
tf
1.1
2.2
12
20
10
15
25
10
ns
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 C
13
15
IS = 2.9 A, VGS = 0 V
0.8
1.2
50
75
ns
125
190
nC
37
13
ns
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
15
5
VGS = 10 thru 7 V
4
VGS = 6 V
12
3
TC = 25 C
2
VGS = 5 V
TC = 125 C
VGS = 4 V
0
0.0
TC = - 55 C
0
0.5
1.0
1.5
2.0
2.5
3.0
Output Characteristics
Transfer Characteristics
800
0.14
0.13
Ciss
600
C - Capacitance (pF)
R DS(on) - On-Resistance ()
0.12
0.11
VGS = 10 V
0.10
400
200
0.09
Coss
Crss
0.08
0
0
12
15
20
30
40
Capacitance
50
2.4
10
ID = 3.6 A
ID = 3.6 A
2.0
VDS = 75 V
6
VDS = 125 V
4
(Normalized)
8
RDS(on) - On-Resistance
10
VGS = 10 V
1.6
1.2
0.8
0
0
Gate Charge
10
0.4
- 50
- 25
25
50
75
100
125
150
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Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
0.40
R DS(on) - On-Resistance ()
ID = 3.6 A
10
TJ = 25 C
TJ = 150 C
0.24
TJ = 125 C
0.16
TJ = 25 C
0.08
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
4.2
50
3.8
40
3.4
30
ID = 250 A
3.0
2.6
2.2
- 50
Power (W)
VGS(th) (V)
0.32
10
20
10
- 25
25
50
75
100
125
150
0.01
0.1
10
100
TJ - Temperature (C)
Time (s)
Threshold Voltage
600
100
BVDSS
Limited
Limited by RDS(on)*
I D - Drain Current (A)
10
100 s
1 ms
10 ms
100 ms
0.1
1s
10 s
TA = 25 C
Single Pulse
0.01
0.1
DC
1
10
100
1000
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Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
60
16
50
40
Power (W)
12
30
20
4
10
0
0
25
50
75
100
Current Derating*
125
150
25
50
75
100
125
150
Power Derating
* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68702.
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6
Package Information
Vishay Siliconix
D4
E2
E4
1
Z
D5
D2
2
2
D1
L1
E3
A1
H
2
E1
E
Detail Z
1
D1
2
K1
Notes:
1. Inch will govern
2
D2
E2
E4
D2 D3(2x) D4
3
4
D5
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
0.97
1.04
1.12
0.038
0.041
MAX.
0.044
A1
0.00
0.05
0.000
0.002
0.23
0.30
0.41
0.009
0.012
0.016
0.013
0.23
0.28
0.33
0.009
0.011
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
0.89
0.019
0.035
D4
0.47 TYP.
D5
2.3 TYP.
0.0185 TYP.
0.090 TYP.
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
0.34 TYP.
E4
0.013 TYP.
0.65 BSC
0.026 BSC
0.86 TYP.
0.034 TYP.
K1
0.35
0.014
0.30
0.41
0.51
0.012
0.016
0.020
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
12
12
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
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AN822
Vishay Siliconix
The PowerPAK 1212-8 has a footprint area comparable to TSOP-6. It is over 40 % smaller than standard
TSSOP-8. Its die capacity is more than twice the size
of the standard TSOP-6s. It has thermal performance
an order of magnitude better than the SO-8, and 20
times better than TSSOP-8. Its thermal performance is
better than all current SMT packages in the market. It
will take the advantage of any PC board heat sink
capability. Bringing the junction temperature down also
increases the die efficiency by around 20 % compared
with TSSOP-8. For applications where bigger packages are typically required solely for thermal consideration, the PowerPAK 1212-8 is a good option.
Both the single and dual PowerPAK 1212-8 utilize the
same pin-outs as the single and dual PowerPAK SO-8.
The low 1.05 mm PowerPAK height profile makes both
versions an excellent choice for applications with
space constraints.
PowerPAK 1212 SINGLE MOUNTING
To take the advantage of the single PowerPAK 1212-8s
thermal performance see Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 single in the index of this
document.
In this figure, the drain land pattern is given to make full
contact to the drain pad on the PowerPAK package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
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AN822
Vishay Siliconix
PowerPAK 1212 DUAL
To take the advantage of the dual PowerPAK 1212-8s
thermal performance, the minimum recommended
land pattern can be found in Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 dual in the index of this document.
The gap between the two drain pads is 10 mils. This
matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder
reflow reliability requirements. Devices are subjected
to solder reflow as a preconditioning test and are then
reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow tempera-
Ramp-Up Rate
+ 6 C /Second Maximum
Temperature at 155 15 C
70 - 180 Seconds
Maximum Temperature
240 + 5/- 0 C
20 - 40 Seconds
Ramp-Down Rate
+ 6 C/Second Maximum
10 s (max)
210 - 220 C
3 C/s (max)
4 C/s (max)
183 C
140 - 170 C
50 s (max)
3 C/s (max)
60 s (min)
Pre-Heating Zone
Reflow Zone
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AN822
Vishay Siliconix
TABLE 1: EQIVALENT STEADY STATE PERFORMANCE
Package
SO-8
TSSOP-8
TSOP-8
PPAK 1212
PPAK SO-8
Configuration
Single
Dual
Single
Dual
Single
Dual
Single
Dual
Single
Dual
20
40
52
83
40
90
2.4
5.5
1.8
5.5
PowerPAK 1212
Standard SO-8
49.8 C
2.4 C/W
Standard TSSOP-8
85 C
20 C/W
TSOP-6
149 C
52 C/W
125 C
40 C/W
PC Board at 45 C
THERMAL PERFORMANCE
Introduction
Spreading Copper
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AN822
Vishay Siliconix
130
105
Spreading Copper (sq. in.)
120
95
110
100
RthJ A (C/W)
RthJA (C/W)
85
75
65
90
80
50 %
100 %
70
100 %
55
0%
60
50 %
0%
50
45
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal performance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attractive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOSFET die in the standard TSSOP-8 or SO-8 packages.
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4
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
APPLICATION NOTE
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7
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 02-Oct-12