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DATA SHEET
BFQ68
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
BFQ68
PINNING
PIN
DESCRIPTION
collector
emitter
base
emitter
fpage
2
Top view
MBK187
Fig.1 SOT122A.
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
open base
18
300
mA
up to Tc = 110 C
4.5
fT
transition frequency
GHz
Vo
output voltage
1.6
PL1
28
dBm
ITO
47
dBm
VCEO
collector-emitter voltage
IC
collector current
Ptot
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
Philips Semiconductors
Product specification
BFQ68
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
VCEO
collector-emitter voltage
open base
18
VEBO
emitter-base voltage
open collector
IC
DC collector current
300
mA
Ptot
4.5
Tstg
storage temperature
65
150
Tj
junction temperature
200
up to Tc = 110 C
THERMAL RESISTANCE
SYMBOL
Rth j-c
September 1995
PARAMETER
THERMAL RESISTANCE
20 K/W
Philips Semiconductors
Product specification
BFQ68
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 15 V
MIN.
TYP.
MAX.
UNIT
50
ICBO
hFE
DC current gain
25
75
fT
transition frequency
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 15 V; f = 1 MHz
3.8
pF
Ce
emitter capacitance
20
pF
Cre
feedback capacitance
IC = 0; VCE = 15 V; f = 1 MHz
2.3
pF
Ccs
collector-stud capacitance
note 1
0.8
pF
GUM
13
dB
Vo
output voltage
note 3
1.6
PL1
28
dBm
ITO
note 4
47
dBm
Notes
1. Measured with emitter and base grounded.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2
2
S
1
11
22
3. dim = 60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 795.25 MHz;
Vq = Vo 6 dB; fq = 803.25 MHz;
Vr = Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC = 240 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C;
Pp = ITO 6 dB; fp = 800 MHz;
Pq = ITO 6 dB; fq = 801 MHz;
measured at f(2qp) = 802 MHz and at f(2pq) = 799 MHz.
September 1995
Philips Semiconductors
Product specification
BFQ68
2.2 nF
2.2 nF
VCC
VBB
L2
2.2 k
2.2 nF
2.2 nF
L1
2.2 nF
75
4.7
75
180
DUT
1.2
pF
1.2
pF
24
1.8 pF
24
0.68 pF
MEA273
f = 40 to 860 MHz.
L1 = L2 = 5 H Ferroxcube choke.
MEA272
MBB361
6
handbook, halfpage
120
handbook, halfpage
fT
(GHz)
h FE
80
40
0
0
40
80
120
160
I C (mA)
10
10 2
VCE = 10 V; Tj = 25 C.
Fig.3
Fig.4
September 1995
I C (mA)
103
Philips Semiconductors
Product specification
BFQ68
MEA270
MEA271
40
handbook, halfpage
handbook, halfpage
gain
(dB)
Cc
(pF)
30
4
20
2
10
G UM
Is 12 I
0
0
10
0
0.1
20
VCB (V)
MEA269
20
d im
(dB)
30
40
50
60
70
100
200
I C (mA)
300
Fig.7
September 1995
10
handbook, halfpage
f (GHz)
IE = ie = 0; f = 1 MHz
Fig.5
Philips Semiconductors
Product specification
BFQ68
0.5
1200 MHz
0.2
1000
800
5
10
500
+j
0
0.2
0.5
10
200
j
10
100
40
0.2
0.5
MEA274
1
IC = 240 mA; VCE = 15 V; Tamb = 25 C.
Zo = 50 .
90
120
60
1200 MHz
1000
150
30
800
500
100
40
180
200
0.05
0.1
30
150
60
120
IC = 240 mA; VCE = 15 V; Tamb = 25 C.
0.15
90
MEA275
September 1995
Philips Semiconductors
Product specification
BFQ68
40
90
120
60
100
150
30
200
500
800
1000
1200 MHz
0.05
180
0.1
0.15
30
150
60
120
MEA277
90
0.5
0.2
5
10
+j
0
j
0.2
0.5
1200
1000
800
500
200
10
10
100
5
0.2
40 MHz
2
0.5
MEA276
September 1995
Philips Semiconductors
Product specification
BFQ68
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
ceramic
BeO
metal
c
N1
A
D1
w1 M A
D2
N3
M1
detail X
H
b
4
L
3
H
1
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
D1
D2
M1
N1
max.
N3
w1
mm
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24
6.93
27.56
25.78
9.91
9.14
3.18
2.66
1.66
1.39
11.82
11.04
1.02
3.86
2.92
3.38
2.74
8-32
UNC
0.381
90
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122A
September 1995
EUROPEAN
PROJECTION
Philips Semiconductors
Product specification
BFQ68
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
10