TK14A55D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(-MOS)

TK14A55D
Switching Regulator Applications

Unit: mm

Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.)

High forward transfer admittance: Yfs = 6.5 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 550 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

550

Gate-source voltage

VGSS

30

(Note 1)

ID

14

Pulse (t = 1 ms)
(Note 1)

IDP

56

Drain power dissipation (Tc = 25C)

PD

50

Single pulse avalanche energy

(Note 2)

EAS

521

mJ

Avalanche current

IAR

14

Repetitive avalanche energy (Note 3)

EAR

5.0

mJ

JEITA

Channel temperature

Tch

150

TOSHIBA

Storage temperature range

Tstg

55 to 150

Weight: 1.7 g (typ.)

DC
Drain current

A
1: Gate
2: Drain
3: Source

JEDEC

SC-67
2-10U1B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.5

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150C.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.6 mH, RG = 25 , IAR = 14 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

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TK14A55D
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 30 V, VDS = 0 V

Drain cut-off current

IDSS

VDS = 550 V, VGS = 0 V

10

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

550

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 7 A

0.31

0.37

Forward transfer admittance

Yfs

VDS = 10 V, ID = 7 A

1.8

6.5

Input capacitance

Ciss

2300

VDS = 25 V, VGS = 0 V, f = 1 MHz

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time
Turn-on time

ton
tf

Turn-off time

VOUT

RL =
29

50

Switching time
Fall time

ID = 7 A

10 V
VGS
0V

tr

VDD 200 V
Duty 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD 400 V, VGS = 10 V, ID = 14 A

10

250

50

100

25

140

40

25

15

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

14

(Note 1)

IDRP

56

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 14 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 14 A, VGS = 0 V,

1600

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

20

Marking

K14A55D

Part No. (or abbreviation code)

Lot No.
A line indicates
Lead(Pb)-Free Finish

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TK14A55D

ID VDS
10

COMMON SOURCE
Tc = 25C
PULSE TEST

10

6.5
12

5.5

7
24

VDS

6.5

16

6
8
5.5
VGS = 5 V
0
0

10

DRAIN-SOURCE VOLTAGE

(V)

10

20

ID VGS
VDS (V)
DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

24
25
16
100
Tc = 55C

10

GATE-SOURCE VOLTAGE

VGS

10

10

ID = 14 A

7
2
3.5
0

12

16

VGS

20

(V)

RDS (ON) ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

GATE-SOURCE VOLTAGE

10
Tc = 55C
25

(V)

(V)

COMMON SOURCE
VDS = 20 V
PULSE TEST

0.1
0.1

VDS

10

100

50

COMMON SOURCE
Tc = 25
PULSE TEST

Yfs ID
100

40

VDS VGS

COMMON SOURCE
VDS = 20 V
PULSE TEST

0
0

30

DRAIN-SOURCE VOLTAGE

40

32

COMMON SOURCE
Tc = 25C
PULSE TEST

7.5

32

VGS = 5V

0
0

6.75

(A)

16

ID VDS
40

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

20

10

DRAIN CURRENT ID

VGS = 10 V, 15 V

0.1
0.1

100

(A)

10

DRAIN CURRENT ID

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COMMON SOURCE
Tc = 25C
PULSE TEST

100

(A)

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TK14A55D

RDS (ON) Tc

IDR VDS
100

COMMON SOURCE
VGS = 10 V
1.0 PULSE TEST

DRAIN REVERSE CURRENT

IDR (A)

0.8

0.6

ID = 14 A
7

3.5

0.4

0.2

COMMON SOURCE
Tc = 25C
PULSE TEST

10

10
5
3
1

40

40

80

CASE TEMPERATURE

120

Tc

0.1
0

160

(C)

0.4

0.2

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

1.4

(V)

100

Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1

10

2
COMMON SOURCE
1 V
DS = 10 V
ID = 1 mA
PULSE TEST
0
80

100

VDS

(V)

VDS (V)
DRAIN-SOURCE VOLTAGE

60

40

20

CASE TEMPERATURE

120

Tc

160

(C)

80

120

Tc

160

(C)

20

500

400

VDS

16
VDD = 100 V

300

400 V

8
COMMON SOURCE
ID = 14 A
Tc = 25C
4
PULSE TEST

VGS
100

0
0

12

200 V

200

20

40

TOTAL GATE CHARGE

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DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

80

80

CASE TEMPERATURE

PD Tc

40

40

0
80

60

Qg

(V)

(pF)
C
CAPACITANCE

Coss

DRAIN-SOURCE VOLTAGE

DRAIN POWER DISSIPATION

PD (W)

1.2

VDS

Vth Tc

1000

0
0

1.0

5
Ciss

1
0.1

0.8

DRAIN-SOURCE VOLTAGE

10000

10

VGS = 0 V
0.6

VGS

0
80

GATE-SOURCE VOLTAGE

DRAIN-SOURCE ON-RESISTANCE
RDS (ON) ( )

1.2

(nC)

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NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty = 0.5
0.2
0.1

0.1

0.05
PDM

0.02
SINGLE PULSE
0.01

0.01

T
Duty = t/T
Rth (ch-c) = 2.5C/W

0.001
10

100

1m

10m

PULSE WIDTH

100m

SAFE OPERATING AREA

100

EAS Tch
600

ID max (pulsed) *
100 s *

500

AVALANCHE ENERGY
EAS (mJ)

ID max (continuous) *
10

ID

(A)

1 ms *

DRAIN CURRENT

1
DC operation
Tc = 25C

0.1

0.001
1

400

300

200

100

0
25

*: SINGLE NONREPETITIVE
0.01

10

tw (s)

50

75

100

125

150

PULSE Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
10

CHANNEL TEMPEATURE (INITIAL)

Tch(C)
VDSS max
100

DRAIN-SOURCE VOLTAGE

15 V

1000

VDS

(V)

BVDSS
IAR

15 V
VDD

TEST CIRCUIT
RG = 25
VDD = 90 V, L = 4.6 mH

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VDS

WAVEFORM
AS =

1
B VDSS

L I2
B

2
VDSS VDD

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TK14A55D

RESTRICTIONS ON PRODUCT USE

20070701-EN GENERAL

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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