2SK2882

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (L2--MOSV)

2SK2882
Chopper Regulator, DC-DC Converter and Motor Drive
Applications

Unit: mm

4-V gate drive

Low drain-source ON resistance: RDS (ON) = 0.08 (typ.)

High forward transfer admittance: |Yfs| = 17 S (typ.)

Low leakage current: IDSS = 100 A (max) (VDS = 150 V)

Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

150

Drain-gate voltage (RGS = 20 k)

VDGR

150

Gate-source voltage

VGSS

20

(Note 1)

ID

18

Pulse (Note 1)

IDP

54

Drain power dissipation (Tc = 25C)

PD

45

Single pulse avalanche energy

(Note 2)

EAS

176

mJ

Avalanche current

IAR

18

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

55~150

DC

Drain current

JEDEC

JEITA
TOSHIBA

SC-67
2-10R1B

Weight: 1.9 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 50 V, Tch = 25C (initial), L = 0.8 mH, RG = 25 , IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SK2882
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cut-off current

IDSS

VDS = 150 V, VGS = 0 V

100

ID = 10 mA, VGS = 0 V

150

V
V

Drain-source breakdown voltage

V (BR) DSS

Gate threshold voltage

Vth

Drain-source ON resistance

RDS (ON)

Forward transfer admittance

Yfs

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time

VDS = 10 V, ID = 1 mA

0.8

2.0

VGS = 4 V, ID = 9 A

0.09

0.18

VGS = 10 V, ID = 9 A

0.08

0.12

VDS = 10 V, ID = 9 A

10

17

1380

pF

200

pF

610

pF

12

24

VDS = 10 V, VGS = 0 V, f = 1 MHz

tr

ID = 9 A

10 V

VGS
ton

Fall time

4.7

Switching time
tf

Turn-off time

toff

Total gate charge

VOUT

RL = 11

Turn-on time

0V

VDD
100 V
Duty <
= 1%, tw = 10 s

Qg

(gate-source plus gate-drain)

Gate-source charge

Qgs

Gate-drain (miller) charge

Qgd

VDD
120 V, VGS = 10 V, ID = 18 A

ns

56

130

57

nC

43

nC

14

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDR

18

IDRP

54

1.7

VDSF

IDR = 18 A, VGS = 0 V

Reverse recovery time

trr

IDR = 18 A, VGS = 0 V

185

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

1.3

Marking

K2882

Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK2882

ID VDS
20

40

10

Drain current ID (A)

Drain current ID (A)

16

Common source
Tc = 25C
Pulse test

3.8

ID VDS
50

3.5
12
3.2
8
VGS = 3 V
4

Common source
Tc = 25C
Pulse test

10

4.5

30

20

3.5

10

3
VGS = 2.5 V

0
0

Drain-source voltage

0
0

VDS (V)

Drain-source voltage

ID VGS

10

VDS (V)

VDS VGS

30

4
Common source
Common source

Tc = 25C

VDS (V)

Pulse test
20

Drain-source voltage

Drain current ID (A)

VDS = 10 V

Tc = 55C
10
100

25

Pulse test
3

2
ID = 18 A

1
9
3

0
0

Gate-source voltage

0
0

VGS (V)

10

Gate-source voltage

12

VGS (V)

Yfs ID
30

Common source
VDS = 10 V
Pulse test

RDS (ON) ID

Tc = 55C
1000

25

Common source

100

Drain-source ON resistance
RDS (ON) (m)

Forward transfer admittance Yfs

(S)

50

10

5
3

1
1

10

30

50

500

Tc = 25C

300

Pulse test

Drain current ID (A)

VGS = 10 V

50
30

10
0.1

100

100

0.3 0.5

10

30

50

Drain current ID (A)

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RDS (ON) Tc

IDR VDS
100

200
Common source

Common source

(A)

160
ID = 18 A

Drain reverse current IDR

Drain-source ON resistance
RDS (ON) (m)

Pulse test

120
4.5
80

40

0
80

40

40

80

120

50

Tc = 25C
Pulse test

30

10
10
5
3

VGS = 0, 1 V

1
1
0

160

0.4

Case temperature Tc (C)

0.8

1.2

Drain-source voltage

Capacitance VDS

VDS (V)

Vth Tc
4

5000

Common source
VDS = 10 V
ID = 1 mA
Pulse test

Vth (V)

3000

500
300

Gate threshold voltage

Capacitance C

(pF)

Ciss
1000

Coss

100
50
30

10
0.1

Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25C
0.3 0.5

Drain-source voltage

10

30 50

0
80

100

40

VDS (V)

40

80

120

160

Case temperature Tc (C)

PD Tc

Dynamic Input/Output Characteristics

160

VDS (V)

60

40

Drain-source voltage

Drain power dissipation PD (W)

1.6

20

40
Common source
ID = 18 A
Tc = 25C
Pulse test

120

30
VDS

80

20
30

60
40

VDD = 120 V

10

VGS
0
0

40

80

120

0
0

160

20

40

60

Total gate charge Qg (nC)

Case temperature Tc (C)

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2SK2882

rth tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)

1
Duty = 0.5

0.5
0.3

0.2
0.1

0.1

0.05

0.05

PDM

0.02

0.03

t
0.01

0.01

Single pulse

Duty = t/T
Rth (ch-c) = 2.78C/W

0.005
0.003
10

100

1m

10 m

Pulse width

100 m

tw

(s)

Safe Operating Area

EAS Tch

100

200
ID max (pulsed)*
100 s*

30
ID max (continuous)*

Drain current ID (A)

Avalanche energy EAS (mJ)

50

1 ms*

10
5
3

10

DC operation
Tc = 25C

160

120

80

40

1
0.5
0.3

0
25

*: Single nonrepetitive
pulse Tc = 25C

10

75

100

125

150

Channel temperature (initial) Tch (C)

Curves must be derated

linearly with increase in
temperature.
0.1
1

50

VDSS max
30

Drain-source voltage

100

300

VDS (V)

15 V

BVDSS
IAR

15 V

VDS

VDD
Test circuit
RG = 25
VDD = 50 V, L = 0.8 mH

Wave form

1 2
B VDSS

AS = LI

B
V
DD
VDSS

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2SK2882

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2006-11-20