DISCRETE SEMICONDUCTORS

DATA SHEET

BFG591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14

1995 Sep 04

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

FEATURES

DESCRIPTION

High power gain

NPN silicon planar epitaxial transistor

in a plastic, 4-pin SOT223 package.

Low noise figure

fpage

High transition frequency

Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.

PINNING
PIN

DESCRIPTION

emitter

base

emitter

collector

Top view

3
MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

20

VCEO

collector-emitter voltage

open base

15

IC

collector current (DC)

200

mA

Ptot

total power dissipation

up to Ts = 80 C; note 1

hFE

DC current gain

IC = 70 mA; VCE = 8 V

60

90

250

Cre

feedback capacitance

IC = Ic = 0; VCE = 12 V; f = 1 MHz

0.7

fT

transition frequency

IC = 70 mA; VCE = 12 V; f = 1 GHz

GHz

GUM

maximum unilateral
power gain

IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 C

13

dB

insertion power gain

IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 C

12

dB

s 21

Note
1. Ts is the temperature at the soldering point of the collector pin.

1995 Sep 04

pF

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

20

VCEO

collector-emitter voltage

open base

15

VEBO

emitter-base voltage

open collector

IC

collector current (DC)

200

mA

Ptot

total power dissipation

Tstg

storage temperature

65

+150

Tj

junction temperature

150

up to Ts = 80 C; note 1

THERMAL CHARACTERISTICS
SYMBOL
Rth j-s

PARAMETER
thermal resistance from junction to
soldering point

CONDITIONS
note 1

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

1995 Sep 04

VALUE

UNIT

35

K/W

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 0.1 mA; IE = 0

V(BR)CES

collector-emitter breakdown voltage

IC = 10 mA; IB = 0

15

V(BR)EBO

emitter-base breakdown voltage

IE = 0.1 mA; IC = 0

ICBO

collector-base leakage current

IE = 0; VCB = 10 V

100

nA

hFE

DC current gain

IC = 70 mA; VCE = 8 V

60

90

250

Cre

feedback capacitance

IB = Ib = 0; VCE = 12 V;
f = 1 MHz

0.7

pF

fT

transition frequency

IC = 70 mA; VCE = 12 V;
f = 1 GHz

GHz

GUM

maximum unilateral power gain;

note 1

IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 C

13

dB

IC = 70 mA; VCE = 12 V;
f = 2 GHz; Tamb = 25 C

7.5

dB

insertion power gain

IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 C

12

dB

output voltage

note 2

700

mV

s 21

Vo
Notes

20

s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------dB.
2
( 1 s 11 ) ( 1 s 22 2 )
2. dim = 60 dB (DIN45004B);
Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.

1995 Sep 04

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

MGC791

3.0
Ptot
(W)
2.5

MRA749

250

handbook, halfpage

h FE
200

2.0
150
1.5
100
1.0
50

0.5

0
0

50

100

150

Ts (oC)

0
10 2

200

10 1

10

IC (mA)

10 2

VCE = 12 V.

Fig.3
Fig.2 Power derating curve.

DC current gain as a function of collector

current, typical values.

MGC792

handbook,1.2
halfpage

MGC793

handbook, halfpage

fT
(GHz)

C re
(pF)

6
0.8

0.4
2

0
0

12

16

VCB (V)

1995 Sep 04

IC = 0; f = 1 MHz.

Fig.4

10

(mA)

10 2

f = 1 GHz; VCE = 12 V.

Feedback capacitance as a function of

collector-base voltage, typical values.

Fig.5

Transition frequency as a function of

collector current, typical values.

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

MGC795

25

MGC794

10

handbook, halfpage

handbook, halfpage

gain
(dB)

gain
(dB)
20

Gmax

GUM
15

Gmax
GUM

10

0
0

40

80

IC (mA)

120

f = 900 MHz; VCE = 12 V.

Fig.6

Gain as a function of collector current;

typical values.

Fig.7

MGC796

50

gain
(dB)

G UM
MSG

30

20
G max
10

0
102

10

103

f (MHz)

104

IC = 70 mA; VCE = 12 V.

Fig.8

1995 Sep 04

80

IC (mA)

120

f = 2 GHz; VCE = 12 V.

handbook, halfpage

40

40

Gain as a function of frequency;

typical values.

Gain as a function of collector current;

typical values.

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

MGC797

20

handbook, halfpage

dim
(dB)

d2
(dB)

30

30

40

40

50

50

60

60

70

40

80

IC (mA)

70

120

1995 Sep 04

40

80

IC (mA)

120

VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz.

VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz.

Fig.9

MGC798

20

handbook, halfpage

Intermodulation distortion as a function

of collector current; typical values.

Fig.10 Second order Intermodulation distortion as

a function of collector current; typical values.

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

90 o
1.0

handbook, full pagewidth

1
135 o

45 o

0.5

0.8

3 GHz

0.6

0.2

0.4

0.2
180 o

0.2

0.5

40 MHz

0.2

0.5

135 o

0o

45 o

1
MGC799

1.0

90 o
VCE = 12 V; IC = 70 mA; Zo = 50 .

Fig.11 Common emitter input reflection coefficient (s11); typical values.

90 o
handbook, full pagewidth

135 o

45 o

40 MHz

180 o

3 GHz
50

40

30

20

0o

10

135 o

45 o

90 o

MGC800

VCE = 12 V; IC = 70 mA.

Fig.12 Common emitter forward transmission coefficient (s21); typical values.

1995 Sep 04

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

90 o
handbook, full pagewidth

135 o

45 o
3 GHz

180 o

0.5

0.4

0.3

0.2

0.1

40 MHz

0o

135 o

45 o

90 o

MGC801

VCE = 12 V; IC = 70 mA.

Fig.13 Common emitter reverse transmission coefficient (s12); typical values.

90 o
1.0

handbook, full pagewidth

1
135 o

45 o

0.5

0.8
0.6

0.2

0.4

0.2

3 GHz
180 o

0.2

0.5

0o

40 MHz
5

0.2

0.5

135 o

45 o

1
MGC802

1.0

90 o
VCE = 12 V; IC = 70 mA; Zo = 50 .

Fig.14 Common emitter output reflection coefficient (s22); typical values.

1995 Sep 04

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

SPICE parameters for the BFG591 crystal

SEQUENCE No.

PARAMETER

VALUE

UNIT

IS

1.341

fA

BF

123.5

NF

.988

VAF

75.85

IKF

9.656

ISE

232.2

fA

NE

2.134

BR

10.22

NR

1.016

10

VAR

1.992

11

IKR

294.1

mA

12

ISC

211.0

aA

13

NC

997.2

14

RB

5.00

15

IRB

1.000

16

RBM

5.00

17

RE

1.275

18

RC

920.6

19 (1)

XTB

0.000

(1)

EG

1.110

EV

21 (1)

XTI

3.000

22

CJE

3.821

pF

23

VJE

600.0

mV

24

MJE

348.5

25

TF

13.60

ps

26

XTF

71.73

27

VTF

10.28

20

L1

LB

L2
B'

C be

C'
E'

Cce
LE
MBC964

L3

QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc);

fc = scaling frequency = 1 GHz.

Fig.15 Package equivalent circuit SOT223.

List of components (see Fig.15)

DESIGNATION

fF

Ccb

16

fF

Cce

249

fF

L1

0.025

nH

L2

1.19

nH

L3

0.60

nH

1.50

nH

0.50

nH

ITF

1.929

29

PTF

0.000

deg

LE

30

CJC

1.409

pF

31

VJC

219.4

mV

32

MJC

166.5

33

XCJ

2.340

34

TR

543.7

ns

35

(1)

CJS

0.000

36

(1)

VJS

750.0

mV

37 (1)

MJS

0.000

38

FC

733.2

1. These parameters have not been extracted, the

default values are shown.
10

UNIT

182

28

Note

VALUE

Cbe

LB

1995 Sep 04

C cb

handbook, halfpage

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

PACKAGE OUTLINE

0.95
0.85

handbook, full pagewidth

0.1 S

seating plane
6.7
6.3

0.32
0.24

3.1
2.9

0.2 M A
4

0.10
0.01

16 o
max

16

3.7
3.3

7.3
6.7

1.80
max

10
max

0.80
0.60

2.3
4.6

Dimensions in mm.

Fig.16 SOT223.

1995 Sep 04

11

0.1 M B
(4x)
MSA035 - 1

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFG591

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Sep 04

12