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TVS/Zeners Device Data

Transient Voltage Suppressors and Zener Diodes

DL150/D
Rev. 3, November2004

SCILLC, 2004
Previous Edition 2001
All Rights Reserved

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ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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DL150/D

Table of Contents

Page

Page

Numeric Data Sheet Listing


Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4

Chapter 3: Case Outlines and Package


Dimensions

Chapter 1: Selector Guide

Case Outlines and Package Dimensions . . . . . . . . . . . . 280

Zener Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
TVS (Transient Voltage Suppressors) . . . . . . . . . . . . . . . . 20

Chapter 4: Index
Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 294

Chapter 2: Data Sheets


Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

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Numeric Data Sheet Listing

Data Sheet

Function

Page

1.5SMC6.8AT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 5.8 78 Volts 1500
Watt Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

1N5333B Series

5 Watt Surmetic 40 Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

1N5908

1500 Watt Mosorb Zener Transient Voltage Suppressors . . . . . . . . . . . . . . . . . . . . . 63

1N5913B Series

3 Watt DO41 Surmetic 30 Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . . 68

1N6267A Series

1500 Watt Mosorb Zener Transient Voltage Suppressors . . . . . . . . . . . . . . . . . . . . . . 74

1N6373 1N6381 Series


(ICTE5 ICTE36,
MPTE5 MPTE45)
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors . . . . . . . . . . 80
1PMT5.0AT1/T3 Series

Zener Transient Voltage Suppressor POWERMITE Package . . . . . . . . . . . . . . . . . . 85

1PMT5920B Series

3.2 Watt Plastic Surface Mount POWERMITE Package . . . . . . . . . . . . . . . . . . . . . . 90

1SMA10CAT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 1078 V VR 400 W


Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

1SMA5913BT3 Series

1.5 Watt Plastic Surface Mount Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . 98

1SMA5.0AT3 Series

400 Watt Peak Power Zener Transient Voltage Suppressors . . . . . . . . . . . . . . . . . . . 102

1SMB10CAT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 1078 V, 600 W Peak
Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

1SMB5913BT3 Series

3 Watt Plastic Surface Mount Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . 111

1SMB5.0AT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 5.0 V 170 V, 600 W
Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

1SMC5.0AT3 Series

Plastic Surface Mount Zener Transient Voltage Suppressors 5.078 VOLTS 1500 Watt
Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122

BZG03C15 Series

600 Watt Peak Power Zener Surge Rated Voltage Regulators . . . . . . . . . . . . . . . . . . 128

BZX84C2V4ET1 Series

225 mW SOT23 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131

BZX84B4V7LT1,
BZX84C2V4LT1 Series

225 mW SOT23 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135

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DF3A6.8FUT1

Dual Common Anode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

DF6A6.8FUT1

Quad Array for ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145

MA3075WALT1

SOT23 Dual Common Anode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . . . 148

MM3Z2V4ST1 SERIES

200 mW SOD323 Surface Mount Tight Tolerance Portfolio . . . . . . . . . . . . . . . . . . . . 153

MM3Z2V4T1 SERIES

200 mW SOD323 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156

MM5Z2V4ST1 SERIES

Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161

MM5Z2V4T1 SERIES

Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164

MMBZ15VDLT1,
MMBZ27VCLT1

SOT23 Dual Common Cathode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . 167

MMBZ5221BLT1 Series

225 mW SOT23 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

MMBZ5221ELT1 Series

225 mW SOT23 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176

MMBZ5V6ALT1 Series

SOT23 Dual Common Anode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . . . 181

MMQA5V6T1 Series

SC59 Quad Common Anode for Zeners ESD Protection . . . . . . . . . . . . . . . . . . . . . . 187

MMSZ2V4ET1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194

MMSZ2V4T1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

MMSZ4678ET1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205

MMSZ4678T1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209

MMSZ5221BT1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214

MMSZ5221ET1 Series

500 mW SOD123 Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

MSQA6V1W5T2

Quad Array for ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223

MZP4729A Series

3 Watt DO41 Surmetic 30 Zener Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . 226

NZL5V6AXV3T1 Series

SC89 Dual Common Anode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . . . . 232

P6KE6.8A Series

600 Watt Peak Power Surmetict40 Zener Transient Voltage Suppressors . . . . . 236

P6SMB11CAT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 9.478 Volts 600 Watt
Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242

P6SMB6.8AT3 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressors 5.8171 Volts 600 Watt
Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247

SA5.0A Series

500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors . . . . . 253

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SD05T1 Series

Transient Voltage Suppressor Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258

SM12T1

SOT23 Dual Common Anode Zeners for ESD Protection . . . . . . . . . . . . . . . . . . . . . 261

SMBJ12AON

Plastic Surface Mount Zener Overvoltage Transient Suppressor 600 Watt Peak
Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 266

SMF5.0AT1 Series

Plastic Surface Mount Zener Overvoltage Transient Suppressor 5 170 Volts 200 Watt
Peak Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271

SMS05T1 Series

SC74 Quad Transient Voltage Suppressor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277

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CHAPTER 1
Selector Guide

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TVS/Zeners
Transient Voltage Suppressors (TVS)
Zener Regulator Diodes
Page

In Brief . . .

Zener Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TVS (Transient Voltage Suppressors) . . . . . . . . . . . . . . .
Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surface Mount Packages . . . . . . . . . . . . . . . . . . . . . . .
225 mW (SOT23) . . . . . . . . . . . . . . . . . . . . . . . . . .
500 mW (SOD123) . . . . . . . . . . . . . . . . . . . . . . . . .
175 Watt (Powermite) . . . . . . . . . . . . . . . . . . . . . . . .
200 Watt (SOD123FL) . . . . . . . . . . . . . . . . . . . . . .
400 Watt (SMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600 Watt (SMB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500 Watt (SMC) . . . . . . . . . . . . . . . . . . . . . . . . . . .
Multiple Device Packages . . . . . . . . . . . . . . . . . . . . . . .
Duals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ON Semiconductors standard TVS (Transient


Voltage Suppressors) and Zener diodes comprise the
largest inventoried line in the industry. Continuous
development of improved manufacturing techniques
have resulted in computerized diffusion and test, as well
as
critical
process
controls
learned
from
surfacesensitive MOS fabrication. The resulting higher
yields have lowered the factory costs. Check the
following features for application to your specific
requirements:
Wide selection of package materials and styles:
Plastic (Surmetic) for low cost, mechanical
ruggedness
Glass for high reliability, low cost
Surface Mount packages for state of the art
designs
Steady State Power Dissipation from 0.1 mW to
5.0 Watts
Breakdown voltages from 1.8 to 200 Volts in
approximately 10% steps
Transient Voltage Suppression Protection from 24 to
1500 Watts with Working Peak Reverse Voltage
from 5.0 to 214 Volts
ESD protection devices
Special selection of electrical characteristics
available at low cost due to highvolume lines
(check your ON Semiconductor sales representative
for special quotations)
UL Recognition on many TVS device types
Tape and Reel options available on all axial leaded
and surface mount types
Many TVS are offered as bidirectional
(clipper devices)
Standard Zener tolerance is " 5.0%

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10
10
12
20
20
20
22
24
27
27
27
29
30
32
34
40
42
42
46

Zener Diodes Regulation in Axial Leads


Table 1. Axial Leaded 3, 5 Watt
Nominal
Zener
Breakdown
Voltage

3 Watt

5 Watt

Cathode = Polarity Band

Cathode =Polarity Band

Plastic
Surmetic 30
Case 59-10
(DO-41)

Plastic
Surmetic 40
Case 17

Volts

1.8
2.0
2.2
2.4
2.5
2.7
2.8
3.0
3.3
3.6

MZP4729A

1N5333B
1N5334B

3.9
4.3
4.7
5.1
5.6

MZP4734A

1N5919B

1N5335B
1N5336B
1N5337B
1N5338B
1N5339B

6.0
6.2
6.8
7.5
8.2

MZP4735A
MZP4736A
MZP4737A
MZP4738A

1N5920B
1N5921B

8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24

1N5913B

1N5924B
MZP4740A
MZP4741A

1N5926B
1N5927B

MZP4744A
MZP4745A

1N5929B
1N5930B

MZP4746A

1N5931B

MZP4749A

1N5932B
1N5933B
1N5934B

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1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B

Zener Diodes Regulation in Axial Leads (continued)


Table 1. Axial Leaded 3, 5 Watt (continued)
Nominal
Zener
Breakdown
Voltage

3 Watt

5 Watt

Cathode = Polarity Band

Cathode = Polarity Band

Volts
Plastic
Surmetic 30
Case 59-10
(DO-41)
25
27
28
30
33

Plastic
Surmetic 40
Case 17

MZP4750A

1N5935B

MZP4751A

1N5936B
1N5937B

36
39
43
47
51

1N5938B

56
60
62
68
75

1N5943B

82
87
91
100
110

1N5947B

120
130
140
150
160

1N5951B
1N5952B

1N5940B
1N5941B
1N5942B

1N5944B
1N5946B

1N5948B
1N5950B

1N5953B
1N5954B

170
180
190
200
220

1N5955B
1N5956B

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1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B

Zener Diodes Regulation in Surface Mount


Table 2. Surface Mount Packages 0.1, 0.2 Watt
Nominal Zener
Breakdown
Voltage

100 mW
Standard Tolerance
SOD523

100 mW
Tight Tolerance
SOD523

200 mW
Standard Tolerance
SOD323

200 mW
Tight Tolerance
SOD323

200 mW
Standard Tolerance
SOD323

Case 502

Case 502

Case 477
Style 1

Case 477
Style 1

Case 477
Style 1

Volts

1.8
2.0
2.2
2.4
2.5

MM5Z2V4T1

MM3Z2V4T1
MM5Z2V4ST1

2.7
2.8
3.0
3.3
3.6
3.7

MM5Z2V7T1

3.9
4.0
4.3
4.7
5.1
5.6

MM5Z3V9T1

MM3Z2V4ST1
MM3Z2V7T1

MM5Z2V7ST1
MM5Z3V0T1
MM5Z3V3T1
MM5Z3V6T1

MM3Z2V7ST1
MM3Z3V0T1
MM3Z3V3T1
MM3Z3V6T1

MM5Z3V3ST1
MM5Z3V6ST1

MM3Z3V3TT1
MM3Z3V3ST1
MM3Z3V6ST1

MM3Z3V9T1

MM5Z4V3T1
MM5Z4V7T1
MM5Z5V1T1
MM5Z5V6T1

MM5Z3V9ST1
MM5Z4V3ST1
MM5Z4V7ST1
MM5Z5V1ST1
MM5Z5V6ST1

MM3Z4V3T1
MM3Z4V7T1
MM3Z5V1T1
MM3Z5V6T1

MM3Z3V9ST1
MM3Z4V3ST1
MM3Z4V7ST1
MM3Z5V1ST1
MM3Z5V6ST1

6.0
6.2
6.8
7.5
8.2

MM5Z6V2T1
MM5Z6V8T1
MM5Z7V5T1
MM5Z8V2T1

MM5Z6V2ST1
MM5Z6V8ST1
MM5Z7V5ST1
MM5Z8V2ST1

MM3Z6V2T1
MM3Z6V8T1
MM3Z7V5T1
MM3Z8V2T1

MM3Z6V2ST1
MM3Z6V8ST1
MM3Z7V5ST1
MM3Z8V2ST1

8.7
9.1
10
11
12

MM5Z9V1T1
MM5Z10VT1
MM5Z11VT1
MM5Z12VT1

MM5Z9V1ST1

MM3Z9V1T1
MM3Z10VT1
MM3Z11VT1
MM3Z12VT1

MM3Z9V1ST1

MM5Z12VST1

MM3Z12VST1

13
14
14.5
15
16
17

MM5Z13VT1

MM3Z13VT1

MM5Z15VT1
MM5Z16VT1

MM5Z16VST1

MM3Z15VT1
MM3Z16VT1

MM3Z16VST1

18
19
20
22
24

MM5Z18VT1

MM5Z18VST1

MM3Z18VT1

MM3Z18VST1

25
27
28
30
33

SD05T1

SD12T1

MM5Z20VT1
MM5Z22VT1
MM5Z24VT1

MM3Z20VT1
MM3Z22VT1
MM3Z24VT1

MM5Z27VT1

MM3Z27VT1

MM5Z30VT1
MM5Z33VT1

MM3Z30VT1
MM3Z33VT1

Devices listed in bold, italic are ON Semiconductor preferred devices.

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Zener Diodes Regulation in Surface Mount (continued)


Table 2. Surface Mount Packages 0.1, 0.2 Watt (continued)
Nominal Zener
Breakdown
Voltage

100 mW
Standard Tolerance
SOD523

100 mW
Tight Tolerance
SOD523

200 mW
Standard Tolerance
SOD323

200 mW
Tight Tolerance
SOD323

200 mW
Standard Tolerance
SOD323

Case 502

Case 502

Case 477
Style 1

Case 477
Style 1

Case 477
Style 1

Volts

36
39
43
47
51

MM5Z36VT1
MM5Z39VT1
MM5Z43VT1
MM5Z47VT1
MM5Z51VT1

MM3Z36VT1
MM3Z39VT1
MM3Z43VT1
MM3Z47VT1
MM3Z51VT1

56
60
62
68
75

MM5Z56VT1

MM3Z56VT1

MM5Z62VT1
MM5Z68VT1
MM5Z75VT1

MM3Z62VT1
MM3Z68VT1
MM3Z75VT1

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Zener Diodes Regulation in Surface Mount (continued)


Table 3. Surface Mount Packages 0.225 Watt
Nominal Zener
Breakdown
Voltage

225 mW
Standard Tolerance
SOT23

225 mW
Tight Tolerance
SOT23

225 mW
Energy Rated
SOT23

225 mW
Standard Tolerance
SOT23

225 mW
Energy Rated
SOT23

Case 318

Case 318

Case 318

Case 318

Case 318

Volts

1.8
2.0
2.2
2.4
2.5

BZX84C2V4LT1

MMBZ5221BLT1
MMBZ5222BLT1

2.7
2.8
3.0
3.3
3.6
3.7

BZX84C2V7LT1

MMBZ5223BLT1
MMBZ5224BLT1
MMBZ5225BLT1
MMBZ5226BLT1
MMBZ5227BLT1

3.9
4.0
4.3
4.7
5.1
5.6

BZX84C3V9LT1
BZX84C4V3LT1
BZX84C4V7LT1
BZX84C5V1LT1
BZX84C5V6LT1

BZX84B4V7LT1
BZX84B5V1LT1
BZX84B5V6LT1

BZX84C4V7ET1
BZX84C5V1ET1
BZX84C5V6ET1

6.0
6.2
6.8
7.5
8.2

BZX84C6V2LT1
BZX84C6V8LT1
BZX84C7V5LT1
BZX84C8V2LT1

BZX84B6V2LT1
BZX84B6V8LT1
BZX84B7V5LT1
BZX84B8V2LT1

8.7
9.1
10
11
12

BZX84C9V1LT1
BZX84C10LT1
BZX84C11LT1
BZX84C12LT1

BZX84C3V0LT1
BZX84C3V3LT1
BZX84C3V6LT1

BZX84C3V3ET1

MMBZ5228BLT1

MMBZ5228ELT1

MMBZ5229BLT1
MMBZ5230BLT1
MMBZ5231BLT1
MMBZ5232BLT1

MMBZ5229ELT1
MMBZ5230ELT1
MMBZ5231ELT1
MMBZ5232ELT1

BZX84C6V2ET1
BZX84C6V8ET1
BZX84C7V5ET1

MMBZ5233BLT1
MMBZ5234BLT1
MMBZ5235BLT1
MMBZ5236BLT1
MMBZ5237BLT1

MMBZ5234ELT1
MMBZ5235ELT1
MMBZ5236ELT1
MMBZ5237ELT1

BZX84C10ET1

MMBZ5238BLT1
MMBZ5239BLT1
MMBZ5240BLT1
MMBZ5241BLT1
MMBZ5242BLT1

BZX84B9V1LT1

BZX84C12ET1

13
14
15
16
17

BZX84C13LT1
BZX84C15LT1
BZX84C16LT1

BZX84B16LT1

BZX84C15ET1
BZX84C16ET1

18
19
20
22
24

BZX84C18LT1

BZX84B18LT1

BZX84C18ET1

25
27
28
30
33

BZX84C20LT1
BZX84C22LT1
BZX84C24LT1

BZX84C24ET1

BZX84C27LT1

BZX84C27ET1

BZX84C30LT1
BZX84C33LT1

Devices listed in bold, italic are ON Semiconductor preferred devices.

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14

MMBZ5226ELT1

MMBZ5239ELT1
MMBZ5240ELT1
MMBZ5242ELT1

MMBZ5243BLT1
MMBZ5244BLT1
MMBZ5245BLT1
MMBZ5246BLT1
MMBZ5247BLT1

MMBZ5243ELT1
MMBZ5244ELT1
MMBZ5245ELT1
MMBZ5246ELT1

MMBZ5248BLT1
MMBZ5249BLT1
MMBZ5250BLT1
MMBZ5251BLT1
MMBZ5252BLT1

MMBZ5248ELT1

MMBZ5253BLT1
MMBZ5254BLT1
MMBZ5255BLT1
MMBZ5256BLT1
MMBZ5257BLT1

MMBZ5253ELT1
MMBZ5254ELT1
MMBZ5255ELT1
MMBZ5256ELT1
MMBZ5257ELT1

MMBZ5250ELT1
MMBZ5252ELT1

Zener Diodes Regulation in Surface Mount (continued)


Table 3. Surface Mount Packages 0.225 Watt (continued)
Nominal Zener
Breakdown
Voltage

225 mW
Standard Tolerance
SOT23

225 mW
Tight Tolerance
SOT23

225 mW
Energy Rated
SOT23

225 mW
Standard Tolerance
SOT23

225 mW
Energy Rated
SOT23

Case 318

Case 318

Case 318

Case 318

Case 318
MMBZ5258ELT1

BZX84C43ET1

MMBZ5258BLT1
MMBZ5259BLT1
MMBZ5260BLT1
MMBZ5261BLT1
MMBZ5262BLT1
MMBZ5263BLT1
MMBZ5264BLT1
MMBZ5265BLT1
MMBZ5266BLT1
MMBZ5267BLT1

MMBZ5263ELT1

Volts

36
39
43
47
51

BZX84C36LT1
BZX84C39LT1
BZX84C43LT1
BZX84C47LT1
BZX84C51LT1

56
60
62
68
75

BZX84C56LT1
BZX84C62LT1
BZX84C68LT1
BZX84C75LT1

82
87
91

MMBZ5268BLT1
MMBZ5270BLT1

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15

MMBZ5262ELT1

Zener Diodes Regulation in Surface Mount (continued)


Table 4. Surface Mount Packages 0.5 Watt
Nominal
Zener
Breakdown
Voltage

500 mW
SOD123

500 mW
Energy Rated
SOD123

Case 425

500 mW
SOD123

500 mW
Energy Rated
SOD123

500 mW
SOD123

500 mW
Energy Rated
SOD123

Case 425

Case 425

Case 425

Case 425

Case 425

MMSZ2V4T1

MMSZ2V4ET1

MMSZ4678T1
MMSZ4679T1
MMSZ4680T1
MMSZ4681T1

MMSZ5221BT1
MMSZ5222BT1

MMSZ5221ET1

2.7
2.8
3.0
3.3
3.6
3.7

MMSZ2V7T1

MMSZ2V7ET1

MMSZ4682T1

MMSZ5223ET1

MMSZ3V0T1
MMSZ3V3T1
MMSZ3V6T1

MMSZ3V0ET1
MMSZ3V3ET1
MMSZ3V6ET1

MMSZ4683T1
MMSZ4684T1
MMSZ4685T1

MMSZ5223BT1
MMSZ5224BT1
MMSZ5225BT1
MMSZ5226BT1
MMSZ5227BT1

3.9
4.0
4.3
4.7
5.1
5.6

MMSZ3V9T1

MMSZ3V9ET1

MMSZ4686T1

MMSZ5228BT1

MMSZ5228ET1

MMSZ4V3T1
MMSZ4V7T1
MMSZ5V1T1
MMSZ5V6T1

MMSZ4V3ET1
MMSZ4V7ET1
MMSZ5V1ET1
MMSZ5V6ET1

MMSZ4687T1
MMSZ4688T1
MMSZ4689T1
MMSZ4690T1

MMSZ5229BT1
MMSZ5230BT1
MMSZ5231BT1
MMSZ5232BT1

MMSZ5229ET1

6.0
6.2
6.8
7.5
8.2

MMSZ6V2T1
MMSZ6V8T1
MMSZ7V5T1
MMSZ8V2T1

MMSZ6V2ET1
MMSZ6V8ET1
MMSZ7V5ET1
MMSZ8V2ET1

MMSZ4691T1
MMSZ4692T1
MMSZ4693T1
MMSZ4694T1

8.7
9.1
10
11
12

MMSZ9V1T1
MMSZ10T1
MMSZ11T1
MMSZ12T1

MMSZ9V1ET1
MMSZ10ET1
MMSZ11ET1
MMSZ12ET1

MMSZ4695T1
MMSZ4696T1
MMSZ4697T1
MMSZ4698T1
MMSZ4699T1

13
14
15
16
17

MMSZ13T1

MMSZ13ET1

MMSZ15T1
MMSZ16T1

MMSZ15ET1
MMSZ16ET1

18
19
20
22
24

MMSZ18T1

MMSZ18ET1

Volts

1.8
2.0
2.2
2.4
2.5

25
27
28
30
33

MMSZ20T1
MMSZ22T1
MMSZ24T1
MMSZ27T1
MMSZ30T1
MMSZ33T1

MMSZ4700T1
MMSZ4701T1
MMSZ4702T1
MMSZ4703T1
MMSZ4704T1
MMSZ4705T1
MMSZ4706T1
MMSZ4707T1
MMSZ4708T1
MMSZ4709T1
MMSZ4710T1
MMSZ4711T1
MMSZ4712T1
MMSZ4713T1
MMSZ4714T1

Devices listed in bold, italic are ON Semiconductor preferred devices.

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MMSZ4684ET1

MMSZ4688ET1
MMSZ4689ET1
MMSZ4690ET1

MMSZ5226ET1

MMSZ5231ET1
MMSZ5232ET1

MMSZ4691ET1
MMSZ4692ET1
MMSZ4693ET1

MMSZ5233BT1
MMSZ5234BT1
MMSZ5235BT1
MMSZ5236BT1
MMSZ5237BT1

MMSZ5234ET1
MMSZ5235ET1
MMSZ5236ET1
MMSZ5237ET1

MMSZ4697ET1

MMSZ5238BT1
MMSZ5239BT1
MMSZ5240BT1
MMSZ5241BT1
MMSZ5242BT1

MMSZ5240ET1
MMSZ5242ET1
MMSZ5243ET1

MMSZ4699ET1

MMSZ5243BT1
MMSZ5244BT1
MMSZ5245BT1
MMSZ5246BT1
MMSZ5247BT1

MMSZ5244ET1
MMSZ5245ET1
MMSZ5246ET1

MMSZ4705ET1

MMSZ5248BT1

MMSZ5248ET1
MMSZ5250ET1

MMSZ4709ET1

MMSZ5250BT1
MMSZ5251BT1
MMSZ5252BT1

MMSZ4702ET1
MMSZ4703ET1

MMSZ4711ET1

MMSZ5253BT1
MMSZ5254BT1
MMSZ5255BT1
MMSZ5256BT1
MMSZ5257BT1

MMSZ5252ET1

MMSZ5255ET1
MMSZ5257ET1

Zener Diodes Regulation in Surface Mount (continued)


Table 4. Surface Mount Packages 0.5 Watt (continued)
Nominal
Zener
Breakdown
Voltage

500 mW
SOD123

500 mW
Energy Rated
SOD123

Case 425

Case 425

500 mW
SOD123

500 mW
Energy Rated
SOD123

500 mW
SOD123

500 mW
Energy Rated
SOD123

Case 425

Case 425

Case 425

Case 425

MMSZ4717ET1

MMSZ5258BT1
MMSZ5259BT1
MMSZ5260BT1
MMSZ5261BT1
MMSZ5262BT1

Volts

36
39
43
47
51

MMSZ36T1
MMSZ39T1
MMSZ43T1

56
60
62
68
75

MMSZ56T1

MMSZ4715T1
MMSZ4716T1
MMSZ4717T1

MMSZ51T1

MMSZ5263BT1
MMSZ5264BT1
MMSZ5265BT1
MMSZ5266BT1
MMSZ5267BT1

82
87
91
100
110

MMSZ5268BT1
MMSZ5269BT1
MMSZ5270BT1
MMSZ5272BT3

Devices listed in bold, italic are ON Semiconductor preferred devices.

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17

MMSZ5263ET1

Zener Diodes Regulation in Surface Mount (continued)


Table 5. Surface Mount Packages 1.5, 3 Watt
Nominal
Zener
Breakdown
Voltage

1.5 Watt

1.5 Watt

3 Watt

3 Watt

SMA

SMA

POWERMITEt

SMB

Cathode
Volts

Plastic
Case 403B
Cathode = Notch

Plastic
Case 403B
Cathode = Notch

Anode

Plastic
Case 457

Plastic
Case 403A

1.8
2.0
2.2
2.4
2.5
2.7
2.8
3.0
3.3
3.6

1SMA5913BT3
1SMA5914BT3

1SMB5913BT3
1SMB5914BT3

3.9
4.3
4.7
5.1
5.6

1SMA5915BT3
1SMA5916BT3
1SMA5917BT3
1SMA5918BT3
1SMA5919BT3

1SMB5915BT3
1SMB5916BT3
1SMB5917BT3
1SMB5918BT3
1SMB5919BT3

6.0
6.2
6.8
7.5
8.2

1SMA5920BT3
1SMA5921BT3
1SMA5922BT3
1SMA5923BT3

1PMT5920BT3
1PMT5921BT3
1PMT5922BT3
1PMT5923BT3

1SMB5920BT3
1SMB5921BT3
1SMB5922BT3
1SMB5923BT3

8.7
9.1
10
11
12

1SMA5924BT3
1SMA5925BT3
1SMA5926BT3
1SMA5927BT3

1PMT5924BT3
1PMT5925BT3
1PMT5927BT3

1SMB5924BT3
1SMB5925BT3
1SMB5926BT3
1SMB5927BT3

1PMT5929BT3

1SMB5928BT3
1SMB5929BT3

1PMT5930BT3

1SMB5930BT3

13
14
15
16
17

1SMA5928BT3

18
19
20
22
24

1SMA5931BT3

1PMT5931BT3

1SMB5931BT3

1SMA5932BT3
1SMA5933BT3
1SMA5934BT3

1PMT5933BT3
1PMT5934BT3

1SMB5932BT3
1SMB5933BT3
1SMB5934BT3

1SMA5935BT3

1PMT5935BT3

1SMB5935BT3

1SMA5936BT3
1SMA5937BT3

1PMT5936BT3

1SMB5936BT3
1SMB5937BT3

25
27
28
30
33

1SMA5929BT3
1SMA5930BT3

BZG03C15

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18

Zener Diodes Regulation in Surface Mount (continued)


Table 5. Surface Mount Packages 1.5, 3 Watt (continued)
Nominal
Zener
Breakdown
Voltage

1.5 Watt

1.5 Watt

3 Watt

3 Watt

SMA

SMA

POWERMITE

SMB

Cathode
Volts

Plastic
Case 403B
Cathode = Notch

Plastic
Case 403B
Cathode = Notch

Anode

Plastic
Case 457

Plastic
Case 403A

36
39
43
47
51

1SMA5938BT3
1SMA5939BT3
1SMA5940BT3
1SMA5941BT3
1SMA5942BT3

56
60
62
68
75

1SMA5943BT3

1SMB5943BT3

1SMA5944BT3
1SMA5945BT3

1SMB5944BT3
1SMB5945BT3
1SMB5946BT3

1PMT5939BT3
1PMT5941BT3

1SMB5938BT3
1SMB5939BT3
1SMB5940BT3
1SMB5941BT3
1SMB5942BT3

82
87
91
100
110

1SMB5947BT3

120
130
150
160
180
200

1SMB5951BT3
1SMB5952BT3
1SMB5953BT3
1SMB5954BT3
1SMB5955BT3
1SMB5956BT3

1SMB5948BT3
1SMB5949BT3
1SMB5950BT3

BZG03C150

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TVS in Axial Leads


Table 6. Peak Power Dissipation, 500 Watts @ 1 ms Surge
Case 59-09 MiniMOSORBt







  
 



  

CASE 5909 (MiniMOSORB)


PLASTIC
Cathode = Polarity Band

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse
(except bidirectional devices).
Breakdown Voltage
Working Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)

Min
(Note 2)

Max

@ IT
Pulse
(mA)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

VBR
(Volts)
Device

Maximum
Reverse Surge
Current IRSM
(Amps)
(Note 3)

Maximum
Reverse Voltage
@ IRSM
(Clamping Voltage)
VRSM (Volts)

5
6
7
7.5

SA5.0A
SA6.0A
SA7.0A
SA7.5A

6.4
6.67
7.78
8.33

7
7.37
8.6
9.21

10
10
10
1

600
600
150
50

54.3
48.5
41.7
38.8

9.2
10.3
12
12.9

8
8.5
9
10

SA8.0A
SA8.5A
SA9.0A
SA10A

8.89
9.44
10
11.1

9.83
10.4
11.1
12.3

1
1
1
1

25
5
1
1

36.7
34.7
32.5
29.4

13.6
14.4
15.4
17

11
12
13
14

SA11A
SA12A
SA13A
SA14A

12.2
13.3
14.4
15.6

13.5
14.7
15.9
17.2

1
1
1
1

1
1
1
1

27.4
25.1
23.2
21.5

18.2
19.9
21.5
23.2

15
16
17
18

SA15A
SA16A
SA17A
SA18A

16.7
17.8
18.9
20

18.5
19.7
20.9
22.1

1
1
1
1

1
1
1
1

20.6
19.2
18.1
17.2

24.4
26
27.6
29.2

20
24
26
28

SA20A
SA24A
SA26A
SA28A

22.2
26.7
28.9
31.1

24.5
29.5
31.9
34.4

1
1
1
1

1
1
1
1

15.4
12.8
11.9
11

32.4
38.9
42.1
45.4

30
33
36
40

SA30A
SA33A
SA36A
SA40A

33.3
36.7
40
44.4

36.8
40.6
44.2
49.1

1
1
1
1

1
1
1
1

10.3
9.4
8.6
7.8

48.4
53.3
58.1
64.5

43
45
48
51

SA43A
SA45A
SA48A
SA51A

47.8
50
53.3
56.7

52.8
55.3
58.9
62.7

1
1
1
1

1
1
1
1

7.2
6.9
6.5
6.1

69.4
72.7
77.4
82.4

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

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20

TVS in Axial Leads (continued)


Table 6. Peak Power Dissipation, 500 Watts @ 1 ms Surge
Case 59-09 MiniMOSORB (continued)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse
(except bidirectional devices).
Breakdown Voltage
Working Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)

Min
(Note 2)

Max

@ IT
Pulse
(mA)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

VBR
(Volts)
Device

Maximum
Reverse Surge
Current IRSM
(Amps)
(Note 3)

Maximum
Reverse Voltage
@ IRSM
(Clamping Voltage)
VRSM (Volts)

58
60
64
70

SA58A
SA60A
SA64A
SA70A

64.4
66.7
71.1
77.8

71.2
73.7
78.6
86

1
1
1
1

1
1
1
1

5.3
5.2
4.9
4.4

93.6
96.8
103
113

78
90
100
110

SA78A
SA90A
SA100A
SA110A

86.7
100
111
122

95.8
111
123
135

1
1
1
1

1
1
1
1

4
3.4
3.1
2.8

126
146
162
177

120
130
160
170

SA120A
SA130A
SA160A
SA170A

133
144
178
189

147
159
197
209

1
1
1
1

1
1
1
1

2.5
2.4
1.9
1.8

193
209
259
275

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

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TVS in Axial Leads (continued)


Table 7. Peak Power Dissipation, 600 Watts @ 1 ms Surge
Case 17 Surmetic 40







  
 



  

CASE 17
PLASTIC
Cathode = Polarity Band

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse
(except bidirectional devices).
Breakdown
Voltage (Note 2)
VBR
(Volts)

Working Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

Maximum
Reverse Surge
Current IRSM
(Amps)
(Note 3)

Maximum
Reverse Voltage
@ IRSM
(Clamping Voltage)
VRSM (Volts)

Nom

@ IT
Pulse
(mA)

6.8
7.5
8.2
9.1

10
10
10
1

P6KE6.8A
P6KE7.5A
P6KE8.2A
P6KE9.1A

5.8
6.4
7.02
7.78

1000
500
200
50

57
53
50
45

10.5
11.3
12.1
13.4

10
11
12
13

1
1
1
1

P6KE10A
P6KE11A
P6KE12A
P6KE13A

8.55
9.4
10.2
11.1

10
5
5
5

41
38
36
33

14.5
15.6
16.7
18.2

15
16
18
20

1
1
1
1

P6KE15A
P6KE16A
P6KE18A
P6KE20A

12.8
13.6
15.3
17.1

5
5
5
5

28
27
24
22

21.2
22.5
25.2
27.7

22
24
27
30

1
1
1
1

P6KE22A
P6KE24A
P6KE27A
P6KE30A

18.8
20.5
23.1
25.6

5
5
5
5

20
18
16
14.4

30.6
33.2
37.5
41.4

33
36
39
43

1
1
1
1

P6KE33A
P6KE36A
P6KE39A
P6KE43A

28.2
30.8
33.3
36.8

5
5
5
5

13.2
12
11.2
10.1

45.7
49.9
53.9
59.3

47
51
56
62

1
1
1
1

P6KE47A
P6KE51A
P6KE56A
P6KE62A

40.2
43.6
47.8
53

5
5
5
5

9.3
8.6
7.8
7.1

64.8
70.1
77
85

68
75
82
91

1
1
1
1

P6KE68A
P6KE75A
P6KE82A
P6KE91A

58.1
64.1
70.1
77.8

5
5
5
5

6.5
5.8
5.3
4.8

92
103
113
125

100
110
120
130

1
1
1
1

P6KE100A
P6KE110A
P6KE120A
P6KE130A

85.5
94
102
111

5
5
5
5

4.4
4
3.6
3.3

137
152
165
179

Device

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

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22

TVS in Axial Leads (continued)


Table 7. Peak Power Dissipation, 600 Watts @ 1 ms Surge
Case 17 Surmetic 40 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse
(except bidirectional devices).
Breakdown
Voltage (Note 2)
VBR
(Volts)
Nom

@ IT
Pulse
(mA)

150
160
170
180
200

1
1
1
1
1

Device
P6KE150A
P6KE160A
P6KE170A
P6KE180A
P6KE200A

Working Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

Maximum
Reverse Surge
Current IRSM
(Amps)
(Note 3)

Maximum
Reverse Voltage
@ IRSM
(Clamping Voltage)
VRSM (Volts)

128
136
145
154
171

5
5
5
5
5

2.9
2.7
2.6
2.4
2.2

207
219
234
246
274

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

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23

TVS in Axial Leads (continued)


Table 8. Peak Power Dissipation, 1500 Watts @ 1 ms Surge
Case 41A MOSORBt







CASE 41A
PLASTIC
Cathode = Polarity Band




  

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse)
ELECTRICAL CHARACTERISTICS (C suffix denotes standard back to back bidirectional versions. Test both polarities)
Clamping Voltage
Max
Reverse
StandOff
Voltage
VRWM
(Volts)
(Note 1)

JEDEC
Device

5
5
8
10

1N5908
1N6373
1N6374
1N6375

12
15
18
22

1N6376
1N6377

36
45

1N6380
1N6381

Breakdown
Voltage

1N6379

Maximum
Reverse
Surge
Current
IRSM
(Volts)
(Note 3)

Maximum
Reverse
Voltage @
IRSM
(Clamping
Voltage)
VRSM
(Volts)

Peak Pulse
Current @
Ipp1 = 1 A
VC1
(Volts max)

Peak Pulse
Current @
Ipp2 =
10 A
VC2
(Volts max)

VBR
Volts
Min
(Note 2)

@ IT
Pulse
(mA)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

ICTE-10/MPTE-10

6
6
9.4
11.7

1
1
1
1

300
300
25
2

120
160
100
90

8.5
9.4
15
16.7

7.6 @ 30 A
7.1
11.3
13.7

8 @ 60 A
7.5
11.5
14.1

ICTE-12/MPTE-12
ICTE-15/MPTE-15
ICTE-18/MPTE-18
ICTE-22/MPTE-22

14.1
17.6
21.2
25.9

1
1
1
1

2
2
2
2

70
60
50
40

21.2
25
30
37.5

16.1
20.1
24.2
29.8

16.5
20.6
25.2
32

ICTE-36

42.4
52.9

1
1

2
2

23
19

65.2
78.9

50.6
63.3

54.3
70

Device
ICTE-5/MPTE-5

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
24

TVS in Axial Leads (continued)


Table 9. Peak Power Dissipation, 1500 Watts @ 1 ms Surge
Case 41A MOSORB







CASE 41A
PLASTIC
Cathode = Polarity Band




  

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse
Breakdown Voltage
(Note 2)
VBR
Volts

Working
Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)

Maximum
Reverse
Leakage
@ VRWM
IR (A)

Maximum
Reverse
Surge
Current
IRSM
(Amps)
(Note 3)

Maximum
Reverse
Voltage
@ IRSM
(Clamping
Voltage)
VRSM
(Volts)

Nom

@ IT
Pulse
(mA)

6.8
7.5
8.2
9.1

10
10
10
1

1N6267A
1N6268A
1N6269A
1N6270A

1.5KE6.8A
1.5KE7.5A
1.5KE8.2A
1.5KE9.1A

5.8
6.4
7.02
7.78

1000
500
200
50

143
132
124
112

10.5
11.3
12.1
13.4

10
11
12
13

1
1
1
1

1N6271A
1N6272A
1N6273A
1N6274A

1.5KE10A
1.5KE11A
1.5KE12A
1.5KE13A

8.55
9.4
10.2
11.1

10
5
5
5

103
96
90
82

14.5
15.6
16.7
18.2

15
16
18
20

1
1
1
1

1N6275A
1N6276A
1N6277A
1N6278A

1.5KE15A
1.5KE16A
1.5KE18A
1.5KE20A

12.8
13.6
15.3
17.1

5
5
5
5

71
67
59.5
54

21.2
22.5
25.2
27.7

22
24
27
30

1
1
1
1

1N6279A
1N6280A
1N6281A
1N6282A

1.5KE22A
1.5KE24A
1.5KE27A
1.5KE30A

18.8
20.5
23.1
25.6

5
5
5
5

49
45
40
36

30.6
33.2
37.5
41.4

33
36
39
43

1
1
1
1

1N6283A
1N6284A
1N6285A
1N6286A

1.5KE33A
1.5KE36A
1.5KE39A
1.5KE43A

28.2
30.8
33.3
36.8

5
5
5
5

33
30
28
25.3

45.7
49.9
53.9
59.3

47
51
56
62

1
1
1
1

1N6287A
1N6288A
1N6289A
1N6290A

1.5KE47A
1.5KE51A
1.5KE56A
1.5KE62A

40.2
43.6
47.8
53

5
5
5
5

23.2
21.4
19.5
17.7

64.8
70.1
77
85

68
75
82
91

1
1
1
1

1N6291A
1N6292A
1N6293A
1N6294A

1.5KE68A
1.5KE75A
1.5KE82A
1.5KE91A

58.1
64.1
70.1
77.8

5
5
5
5

16.3
14.6
13.3
12

92
103
113
125

100
110
120
130

1
1
1
1

1N6295A
1N6296A
1N6297A
1N6298A

1.5KE100A
1.5KE110A
1.5KE120A
1.5KE130A

85.5
94
102
111

5
5
5
5

11
9.9
9.1
8.4

137
152
165
179

JEDEC
Device

Device

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
25

TVS in Axial Leads (continued)


Table 9. Peak Power Dissipation, 1500 Watts @ 1 ms Surge
Case 41A MOSORB (continued)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse
Breakdown Voltage
(Note 2)
VBR
Volts
Nom

@ IT
Pulse
(mA)

150
160
170
180
200
220
250

1
1
1
1
1
1
1

JEDEC
Device
1N6299A
1N6300A
1N6301A
1N6302A
1N6303A

Device
1.5KE150A
1.5KE160A
1.5KE170A
1.5KE180A
1.5KE200A
1.5KE220A
1.5KE250A

Working
Peak
Reverse
Voltage
VRWM
(Volts)
(Note 1)
128
136
145
154
171
185
214

Maximum
Reverse
Leakage
@ VRWM
IR (A)

Maximum
Reverse
Surge
Current
IRSM
(Amps)
(Note 3)

Maximum
Reverse
Voltage
@ IRSM
(Clamping
Voltage)
VRSM
(Volts)

5
5
5
5
5
5
5

7.2
6.8
6.4
6.1
5.5
4.6
5

207
219
234
246
274
328
344

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
26

TVS in Surface Mount


Table 10. Surface Mount Packages 0.225 Watt
Nominal Zener
Breakdown
Voltage

225 mW
Energy Rated
SOT23

225 mW
Energy Rated
SOT23

500 mW
Energy Rated
SOD123

500 mW
Energy Rated
SOD123

500 mW
Energy Rated
SOD123

Case 318

Case 318

Case 425

Case 425

Case 425

MMBZ5221ELT1

MMSZ2V4ET1

MMSZ5221ET1

MMSZ2V7ET1

MMSZ5223ET1

Volts

1.8
2.0
2.2
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.7
3.9
4.0
4.3
4.7
5.1
5.6

BZX84C3V3ET1

BZX84C4V7ET1
BZX84C5V1ET1
BZX84C5V6ET1

MMBZ5226ELT1

MMSZ3V0ET1
MMSZ3V3ET1
MMSZ3V6ET1

MMBZ5228ELT1

MMSZ3V9ET1

MMBZ5229ELT1
MMBZ5230ELT1
MMBZ5231ELT1
MMBZ5232ELT1

MMSZ4V3ET1
MMSZ4V7ET1
MMSZ5V1ET1
MMSZ5V6ET1

MMBZ5234ELT1
MMBZ5235ELT1
MMBZ5236ELT1
MMBZ5237ELT1

MMSZ6V2ET1
MMSZ6V8ET1
MMSZ7V5ET1
MMSZ8V2ET1
MMSZ9V1ET1
MMSZ10ET1
MMSZ11ET1
MMSZ12ET1

6.0
6.2
6.8
7.5
8.2

BZX84C6V2ET1
BZX84C6V8ET1
BZX84C7V5ET1

8.7
9.1
10
11
12

BZX84C10ET1

MMBZ5239ELT1
MMBZ5240ELT1

BZX84C12ET1

MMBZ5242ELT1

MMSZ13ET1

BZX84C15ET1
BZX84C16ET1

MMBZ5243ELT1
MMBZ5244ELT1
MMBZ5245ELT1
MMBZ5246ELT1

BZX84C18ET1

MMBZ5248ELT1

13
14
15
16
17
18
19
20
22
24
25
27
28
30
33

MMSZ4684ET1

MMSZ5228ET1
MMSZ5229ET1
MMSZ4688ET1
MMSZ4689ET1
MMSZ4690ET1
MMSZ4691ET1

MMSZ4692ET1
MMSZ4693ET1

MMSZ4697ET1

BZX84C27ET1

MMSZ5231ET1
MMSZ5232ET1
MMSZ5234ET1
MMSZ5235ET1
MMSZ5236ET1
MMSZ5237ET1

MMSZ4699ET1

MMSZ5240ET1
MMSZ5242ET1
MMSZ5243ET1

MMSZ15ET1
MMSZ16ET1

MMSZ4702ET1
MMSZ4703ET1

MMSZ5244ET1
MMSZ5245ET1
MMSZ5246ET1

MMSZ18ET1

MMSZ4705ET1

MMSZ5248ET1

MMBZ5250ELT1
BZX84C24ET1

MMSZ5226ET1

MMSZ5250ET1

MMBZ5252ELT1

MMSZ4709ET1

MMBZ5253ELT1
MMBZ5254ELT1
MMBZ5255ELT1
MMBZ5256ELT1
MMBZ5257ELT1

MMSZ5252ET1

MMSZ4711ET1
MMSZ5255ET1
MMSZ5257ET1

Devices listed in bold, italic are ON Semiconductor preferred devices.

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27

TVS in Surface Mount (continued)


Table 10. Surface Mount Packages 0.225 Watt (continued)
Nominal Zener
Breakdown
Voltage

225 mW
Energy Rated
SOT23

225 mW
Energy Rated
SOT23

500 mW
Energy Rated
SOD123

500 mW
Energy Rated
SOD123

500 mW
Energy Rated
SOD123

Case 318

Case 318

Case 425

Case 425

Case 425

Volts

36
39
43
47
51
56

MMBZ5258ELT1
BZX84C43ET1

MMSZ4717ET1
MMBZ5262ELT1
MMBZ5263ELT1

MMSZ5263ET1

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28

TVS in Surface Mount (continued)


Table 11. 1PMT Series Unidirectional Overvoltage Transient Suppressors, 175 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted) (VF = 1.25 Volts @ 200 mA)
Device

Marking

VRWM (V)
(Note 1)

VBR @ IT (V) (Note 2)


Min

Nom

Max

IT

IR @ VRWM

VC @ IPP

IPP (A)

(mA)

(A)

(V)

(Note 3)





POWERMITE
CASE 457
PLASTIC




 




  
1PMT5.0AT3
1PMT7.0AT3
1PMT12AT3
1PMT16AT3

MKE
MKM
MLE
MLP

5.0
7.0
12
16

6.4
7.78
13.3
17.8

6.7
8.2
14
18.75

7.0
8.6
14.7
19.7

10
10
1.0
1.0

800
500
5.0
5.0

9.2
12
19.9
26

19
14.6
8.8
7.0

1PMT18AT3
1PMT22AT3
1PMT24AT3
1PMT26AT3

MLT
MLX
MLZ
MME

18
22
24
26

20
24.4
26.7
28.9

21
25.6
28.1
30.4

22.1
26.9
29.5
31.9

1.0
1.0
1.0
1.0

5.0
5.0
5.0
5.0

29.2
35.5
38.9
42.1

6.0
4.9
4.5
4.2

1PMT28AT3
1PMT30AT3
1PMT33AT3
1PMT36AT3

MMG
MMK
MMM
MMP

28
30
33
36

31.1
33.3
36.7
40

32.8
35.1
38.7
42.1

34.4
36.8
40.6
44.2

1.0
1.0
1.0
1.0

5.0
5.0
5.0
5.0

45.4
48.4
53.3
58.1

3.9
3.6
3.3
3.0

1PMT40AT3
1PMT48AT3
1PMT51AT3
1PMT58AT3

MMR
MMX
MMZ
MNG

40
48
51
58

44.4
53.3
56.7
64.4

46.8
56.1
59.7
67.8

49.1
58.9
62.7
71.2

1.0
1.0
1.0
1.0

5.0
5.0
5.0
5.0

64.5
77.4
82.4
93.6

2.7
2.3
2.1
1.9

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
29

TVS in Surface Mount (continued)


Table 12. SMF Series Unidirectional Overvoltage Transient Suppressors, 200 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted) (VF = 1.25 Volts @ 200 mA)
Device

Marking

VRWM (V)
(Note 1)

VBR @ IT (V) (Note 2)


Min

Nom

Max

IT

IR @ VRWM

VC @ IPP

IPP (A)

(mA)

(A)

(V)

(Note 3)





SOD123FL
CASE 498
PLASTIC




 




  
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A

KE
KG
KK
KM

5.0
6.0
6.5
7.0

6.4
6.67
7.22
7.78

6.7
7.02
7.6
8.2

7.0
7.37
7.98
8.6

10
10
10
10

400
400
250
100

9.2
10.3
11.2
12

16.3
14.6
13.4
12.5

SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A

KP
KR
KT
KV

7.5
8.0
8.5
9.0

8.33
8.89
9.44
10

8.77
9.36
9.92
10.55

9.21
9.83
10.4
11.1

1.0
1.0
1.0
1.0

50
25
10
5.0

12.9
13.6
14.4
15.4

11.6
11
10.4
9.7

SMF10A
SMF11A
SMF12A
SMF13A

KX
KZ
LE
LG

10
11
12
13

11.1
12.2
13.3
14.4

11.7
12.85
14
15.15

12.3
13.5
14.7
15.9

1.0
1.0
1.0
1.0

2.5
2.5
2.5
1.0

17
18.2
19.9
21.5

8.8
8.2
7.5
7.0

SMF14A
SMF15A
1SMF16B
SMF16A

LK
LM
MLU
LP

14
15
16
16

15.6
16.7
16.7
17.8

16.4
17.6
17.6
18.75

17.2
18.5
16.5
19.7

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

23.2
24.4
20
26

6.5
6.1
1.0
5.8

SMF17A
SMF18A
SMF20A
SMF22A

LR
LT
LV
LX

17
18
20
22

18.9
20
22.2
24.4

19.9
21
23.35
25.6

20.9
22.1
24.5
26.9

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

27.6
29.2
32.4
35.5

5.4
5.1
4.6
4.2

SMF24A
SMF26A
SMF28A
SMF30A

LZ
ME
MG
MK

24
26
28
30

26.7
28.9
31.1
33.3

28.1
30.4
32.8
35.1

29.5
31.9
34.4
36.8

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

38.9
42.1
45.4
48.4

3.9
3.6
3.3
3.1

SMF33A
SMF36A
SMF40A
SMF43A

MM
MP
MR
MT

33
36
40
43

36.7
40
44.4
47.8

38.7
42.1
46.8
50.3

40.6
44.2
49.1
52.8

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

53.3
58.1
64.5
69.4

2.8
2.6
2.3
2.2

SMF45A
SMF48A
SMF51A
SMF54A

MV
MX
MZ
NE

45
48
51
54

50
53.3
56.7
60

52.65
56.1
59.7
63.15

55.3
58.9
62.7
66.3

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

72.7
77.4
82.4
87.1

2.1
1.9
1.8
1.7

SMF58A
SMF60A
SMF64A
SMF70A

NG
NK
NM
NP

58
60
64
70

64.4
66.7
71.1
77.8

67.8
70.2
74.85
81.9

71.2
73.7
78.6
86

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

93.6
96.8
103
113

1.6
1.5
1.5
1.3

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
30

TVS in Surface Mount (continued)


Table 12. SMF Series Unidirectional Overvoltage Transient Suppressors, 200 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms) (continued)
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted) (VF = 1.25 Volts @ 200 mA)
Device

Marking

VRWM (V)
(Note 1)

VBR @ IT (V) (Note 2)


Min

Nom

Max

IT

IR @ VRWM

VC @ IPP

IPP (A)

(mA)

(A)

(V)

(Note 3)





SOD123FL
CASE 498
PLASTIC




 




  
SMF75A
SMF78A
SMF85A
SMF90A

NR
NT
NV
NX

75
78
85
90

83.3
86.7
94.4
100

87.7
91.25
99.2
105.5

92.1
95.8
104
111

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

121
126
137
146

1.2
1.2
1.1
1.0

SMF100A
SMF110A
SMF120A
SMF130A

NZ
PE
PG
PK

100
110
120
130

111
122
133
144

117
128.5
140
151.5

123
135
147
159

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

162
177
193
209

0.9
0.8
0.8
0.7

SMF150A
SMF160A
SMF170A

PM
PP
PR

150
160
170

167
178
189

176
187.5
199

185
197
209

1.0
1.0
1.0

1.0
1.0
1.0

243
259
275

0.6
0.6
0.5

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
31

TVS in Surface Mount (continued)


Table 13. 1SMA Series Unidirectional Overvoltage Transient Suppressors; 400 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 Volts @ IF = 40 A for all types) (Note 4)

Device

Working
Peak
Reverse
Voltage VRWM
(Volts) (Note 1)

Breakdown Voltage
VBR
Volts (Min)
(Note 2)

IT
mA

Maximum
Reverse Voltage @
IRSM
(Clamping Voltage)
VC (Volts)

Maximum
Reverse
Surge Current
IPP (Amps)
(Note 3)

Maximum
Reverse Leakage
@ VRWM
IR (A)

Device
Marking







SMA
CASE 403B
PLASTIC

 




  
1SMA5.0AT3
1SMA6.0AT3
1SMA6.5AT3
1SMA7.0AT3

5.0
6.0
6.5
7.0

6.4
6.67
7.22
7.78

10
10
10
10

9.2
10.3
11.2
12.0

43.5
38.8
35.7
33.3

400
400
250
250

QE
QG
QK
QM

1SMA7.5AT3
1SMA8.0AT3
1SMA8.5AT3
1SMA9.0AT3

7.5
8.0
8.5
9.0

8.33
8.89
9.44
10

1
1
1
1

12.9
13.6
14.4
15.4

31.0
29.4
27.8
26.0

50
25
5.0
2.5

QP
QR
QT
QV

1SMA10AT3
1SMA11AT3
1SMA12AT3
1SMA13AT3

10
11
12
13

11.1
12.2
13.3
14.4

1
1
1
1

17.0
18.2
19.9
21.5

23.5
22.0
20.1
18.6

2.5
2.5
2.5
2.5

QX
QZ
RE
RG

1SMA15AT3
1SMA16AT3
1SMA17AT3
1SMA18AT3

15
16
17
18

16.7
17.8
18.9
20

1
1
1
1

24.4
26.0
27.6
29.2

16.4
15.4
14.5
13.7

2.5
2.5
2.5
2.5

RM
RP
RR
RT

1SMA20AT3
1SMA22AT3
1SMA24AT3
1SMA26AT3

20
22
24
26

22.2
24.4
26.7
28.9

1
1
1
1

32.4
35.5
38.9
42.1

12.3
11.3
10.3
9.5

2.5
2.5
2.5
2.5

RV
RX
RZ
SE

1SMA28AT3
1SMA30AT3
1SMA33AT3
1SMA36AT3

28
30
33
36

31.1
33.3
36.7
40

1
1
1
1

45.4
48.4
53.3
58.1

8.8
8.3
7.5
6.9

2.5
2.5
2.5
2.5

SG
SK
SM
SP

1SMA40AT3
1SMA43AT3
1SMA45AT3
1SMA48AT3

40
43
45
48

44.4
47.8
50
53.3

1
1
1
1

64.5
69.4
72.2
77.4

6.2
5.8
5.5
5.2

2.5
2.5
2.5
2.5

SR
ST
SV
SX

1SMA51AT3
1SMA54AT3
1SMA58AT3
1SMA64AT3

51
54
58
64

56.7
60
64.4
71.1

1
1
1
1

82.4
87.1
93.6
103.0

4.9
4.6
4.8
3.9

2.5
2.5
2.5
2.5

SZ
TE
TG
TM

1SMA70AT3
1SMA75AT3

70
75

77.8
83.3

1
1

113.0
121.0

3.5
3.3

2.5
2.5

TP
TR

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.

http://onsemi.com
32

TVS in Surface Mount (continued)


Table 14. 1SMA Series Bidirectional Zener Overvoltage Transient Suppressors; 400 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Device

Working
Peak
Reverse
Voltage VRWM
(Volts) (Note 1)

Breakdown Voltage
VBR
Volts (Min)
(Note 2)

IT
mA

Maximum
Reverse Voltage
@ IRSM
(Clamping
Voltage)
VC (Volts)

Maximum
Reverse
Surge Current
IPP (Amps)
(Note 3)

Maximum
Reverse Leakage
@ VRWM
IR (A)

Device
Marking







SMA
CASE 403B
PLASTIC

 




  
1SMA10CAT3
1SMA11CAT3
1SMA12CAT3
1SMA13CAT3

10
11
12
13

11.1
12.2
13.3
14.4

1
1
1
1

17.0
18.2
19.9
21.5

23.5
22.0
20.1
18.6

2.5
2.5
2.5
2.5

QXC
QZC
REC
RGC

1SMA14CAT3
1SMA15CAT3
1SMA16CAT3
1SMA18CAT3

14
15
16
18

15.6
16.7
17.8
20

1
1
1
1

23.2
24.4
26.0
29.2

17.2
16.4
15.4
13.7

2.5
2.5
2.5
2.5

RKC
RMC
RPC
RTC

1SMA20CAT3
1SMA22CAT3
1SMA24CAT3
1SMA26CAT3

20
22
24
26

22.2
24.4
26.7
28.9

1
1
1
1

32.4
35.5
38.9
42.1

12.3
11.3
10.3
9.5

2.5
2.5
2.5
2.5

RVC
RXC
RZC
SEC

1SMA28CAT3
1SMA30CAT3
1SMA33CAT3
1SMA36CAT3

28
30
33
36

31.1
33.3
36.7
40

1
1
1
1

45.4
48.4
53.3
58.1

8.8
8.3
7.5
6.9

2.5
2.5
2.5
2.5

SGC
SKC
SMC
SPC

1SMA40CAT3
1SMA43CAT3
1SMA48CAT3
1SMA51CAT3

40
43
48
51

44.4
47.8
53.3
56.7

1
1
1
1

64.5
69.4
77.4
82.4

6.2
5.8
5.2
4.9

2.5
2.5
2.5
2.5

SRC
STC
SXC
SZC

1SMA54CAT3
1SMA58CAT3
1SMA60CAT3
1SMA64CAT3

54
58
60
64

60
64.4
66.7
71.1

1
1
1
1

87.1
93.6
96.8
103.0

4.6
4.3
4.1
3.9

2.5
2.5
2.5
2.5

TEC
TGC
TKC
TMC

1SMA70CAT3
1SMA78CAT3

70
78

77.8
86.7

1
1

113.0
126.0

3.5
3.2

2.5
2.5

TPC
TSC

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
33

TVS in Surface Mount (continued)


Table 15. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 V Max @ IF = 30 A) (Note 4)

Device

Working
Peak Reverse
Voltage
VRWM
Volts (Note 1)

Maximum
Clamping
Voltage
VC @ Ipp
Volts

Breakdown Voltage
VBR @ IT
Volts (Min)
(Note 2)

mA

Peak
Pulse Current
Ipp
Amps
(Note 3)

Maximum
Reverse Leakage
@ VR
IR
A

 

Device
Marking







SMB
CASE 403A
PLASTIC




  
1SMB5.0AT3
1SMB6.0AT3
1SMB6.5AT3
1SMB7.0AT3

5.0
6.0
6.5
7.0

6.40
6.67
7.22
7.78

10
10
10
10

9.2
10.3
11.2
12.0

65.2
58.3
53.6
50.0

800
800
500
200

KE
KG
KK
KM

1SMB7.5AT3
1SMB8.0AT3
1SMB8.5AT3
1SMB9.0AT3

7.5
8.0
8.5
9.0

8.33
8.89
9.44
10.0

1.0
1.0
1.0
1.0

12.9
13.6
14.4
15.4

46.5
44.1
41.7
39.0

100
50
10
5.0

KP
KR
KT
KV

1SMB10AT3
1SMB11AT3
1SMB12AT3
1SMB13AT3

10
11
12
13

11.1
12.2
13.3
14.4

1.0
1.0
1.0
1.0

17.0
18.2
19.9
21.5

35.3
33.0
30.2
27.9

5.0
5.0
5.0
5.0

KX
KZ
LE
LG

1SMB14AT3
1SMB15AT3
1SMB16AT3
1SMB17AT3

14
15
16
17

15.6
16.7
17.8
18.9

1.0
1.0
1.0
1.0

23.2
24.4
26.0
27.6

25.8
24.0
23.1
21.7

5.0
5.0
5.0
5.0

LK
LM
LP
LR

1SMB18AT3
1SMB20AT3
1SMB22AT3
1SMB24AT3

18
20
22
24

20.0
22.2
24.4
26.7

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

20.5
18.5
16.9
15.4

5.0
5.0
5.0
5.0

LT
LV
LX
LZ

1SMB26AT3
1SMB28AT3
1SMB30AT3
1SMB33AT3

26
28
30
33

28.9
31.1
33.3
36.7

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

14.2
13.2
12.4
11.3

5.0
5.0
5.0
5.0

ME
MG
MK
MM

1SMB36AT3
1SMB40AT3
1SMB43AT3
1SMB45AT3

36
40
43
45

40.0
44.4
47.8
50.0

1.0
1.0
1.0
1.0

58.1
64.5
69.4
72.7

10.3
9.3
8.6
8.3

5.0
5.0
5.0
5.0

MP
MR
MT
MV

1SMB48AT3
1SMB51AT3
1SMB54AT3
1SMB58AT3

48
51
54
58

53.3
56.7
60.0
64.4

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

7.7
7.3
6.9
6.4

5.0
5.0
5.0
5.0

MX
MZ
NE
NG

1SMB60AT3
1SMB64AT3
1SMB70AT3
1SMB75AT3

60
64
70
75

66.7
71.1
77.8
83.3

1.0
1.0
1.0
1.0

96.8
103
113
121

6.2
5.8
5.3
4.9

5.0
5.0
5.0
5.0

NK
NM
NP
NR

1SMB85AT3
1SMB90AT3
1SMB100AT3

85
90
100

94.4
100
111

1.0
1.0
1.0

137
146
162

4.4
4.1
3.7

5.0
5.0
5.0

NV
NX
NZ

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
34

TVS in Surface Mount (continued)


Table 15. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1ms Surge (10 x 1000 ms) (continued)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 V Max @ IF = 30 A) (Note 4)

Device

Working
Peak Reverse
Voltage
VRWM
Volts (Note 1)

Maximum
Clamping
Voltage
VC @ Ipp
Volts

Breakdown Voltage
VBR @ IT
Volts (Min)
(Note 2)

mA

Peak
Pulse Current
Ipp
Amps
(Note 3)

Maximum
Reverse Leakage
@ VR
IR
A

 

Device
Marking







SMB
CASE 403A
PLASTIC




  
1SMB110AT3
1SMB120AT3
1SMB130AT3
1SMB150AT3

110
120
130
150

122
133
144
167

1.0
1.0
1.0
1.0

177
193
209
243

3.4
3.1
2.9
2.5

5.0
5.0
5.0
5.0

PE
PG
PK
PM

1SMB160AT3
1SMB170AT3

160
170

178
189

1.0
1.0

259
275

2.3
2.2

5.0
5.0

PP
PR

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.

http://onsemi.com
35

TVS in Surface Mount (continued)


Table 16. 1SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted).

Device

Working
Peak Reverse
Voltage
VRWM
Volts (Note 1)

Maximum
Clamping
Voltage
VC @ Ipp
Volts

Breakdown Voltage
VBR @ IT
Volts (Min)
(Note 2)

mA

Peak
Pulse Current
Ipp
Amps
(Note 3)

Maximum
Reverse Leakage
@ VR
IR
A

Device
Marking







SMB
CASE 403A
PLASTIC

 




  
1SMB10CAT3
1SMB11CAT3
1SMB12CAT3
1SMB13CAT3

10
11
12
13

11.1
12.2
13.3
14.4

1.0
1.0
1.0
1.0

17.0
18.2
19.9
21.5

35.3
33.0
30.2
27.9

5.0
5.0
5.0
5.0

KXC
KZC
LEC
LGC

1SMB14CAT3
1SMB15CAT3
1SMB16CAT3
1SMB17CAT3

14
15
16
17

15.6
16.7
17.8
18.9

1.0
1.0
1.0
1.0

23.2
24.4
26.0
27.6

25.8
24.0
23.1
21.7

5.0
5.0
5.0
5.0

LKC
LMC
LPC
LRC

1SMB18CAT3
1SMB20CAT3
1SMB22CAT3
1SMB24CAT3

18
20
22
24

20.0
22.2
24.4
26.7

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

20.5
18.5
16.9
15.4

5.0
5.0
5.0
5.0

LTC
LVC
LXC
LZC

1SMB26CAT3
1SMB28CAT3
1SMB30CAT3
1SMB33CAT3

26
28
30
33

28.9
31.1
33.3
36.7

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

14.2
13.2
12.4
11.3

5.0
5.0
5.0
5.0

MEC
MGC
MKC
MMC

1SMB36CAT3
1SMB40CAT3
1SMB43CAT3
1SMB45CAT3

36
40
43
45

40.0
44.4
47.8
50.0

1.0
1.0
1.0
1.0

58.1
64.5
69.4
72.7

10.3
9.3
8.6
8.3

5.0
5.0
5.0
5.0

MPC
MRC
MTC
MVC

1SMB48CAT3
1SMB51CAT3
1SMB54CAT3
1SMB58CAT3

48
51
54
58

53.3
56.7
60.0
64.4

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

7.7
7.3
6.9
6.4

5.0
5.0
5.0
5.0

MXC
MZC
NEC
NGC

1SMB60CAT3
1SMB64CAT3
1SMB75CAT3

60
64
75

66.7
71.1
83.3

1.0
1.0
1.0

96.8
103
121

6.2
5.8
4.9

5.0
5.0
5.0

NKC
NMC
NRC

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
36

TVS in Surface Mount (continued)


Table 17. P6SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 V Max, IF = 50 A for all types) (Note 4)
Breakdown Voltage
VBR @ IT
Volts (Note 2)
Device

Min

Nom

Max

mA

Working
Peak
Reverse
Voltage
VRWM
Volts
(Note 1)

Maximum
Reverse
Leakage
@ VRWM
IR
A

Maximum
Reverse
Surge
Current
IPP
Amps
(Note 3)

Maximum
Reverse
Voltage
@ IPP
(Clamping
Voltage)
VC
Volts

Maximum
Temperature
Coefficient
of VBR
%/C

Device
Marking







SMB
CASE 403A
PLASTIC

 




  
P6SMB6.8AT3
P6SMB7.5AT3
P6SMB8.2AT3
P6SMB9.1AT3

6.45
7.13
7.79
8.65

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

5.8
6.4
7.02
7.78

1000
500
200
50

57
53
50
45

10.5
11.3
12.1
13.4

0.057
0.061
0.065
0.068

6V8A
7V5A
8V2A
9V1A

P6SMB10AT3
P6SMB11AT3
P6SMB12AT3
P6SMB13AT3

9.5
10.5
11.4
12.4

10
11
12
13

10.5
11.6
12.6
13.7

1
1
1
1

8.55
9.4
10.2
11.1

10
5
5
5

41
38
36
33

14.5
15.6
16.7
18.2

0.073
0.075
0.078
0.081

10A
11A
12A
13A

P6SMB15AT3
P6SMB16AT3
P6SMB18AT3
P6SMB20AT3

14.3
15.2
17.1
19

15
16
18
20

15.8
16.8
18.9
21

1
1
1
1

12.8
13.6
15.3
17.1

5
5
5
5

28
27
24
22

21.2
22.5
25.2
27.7

0.084
0.086
0.088
0.09

15A
16A
18A
20A

P6SMB22AT3
P6SMB24AT3
P6SMB27AT3
P6SMB30AT3

20.9
22.8
25.7
28.5

22
24
27
30

23.1
25.2
28.4
31.5

1
1
1
1

18.8
20.5
23.1
25.6

5
5
5
5

20
18
16
14.4

30.6
33.2
37.5
41.4

0.092
0.094
0.096
0.097

22A
24A
27A
30A

P6SMB33AT3
P6SMB36AT3
P6SMB39AT3
P6SMB43AT3

31.4
34.2
37.1
40.9

33
36
39
43

34.7
37.8
41
45.2

1
1
1
1

28.2
30.8
33.3
36.8

5
5
5
5

13.2
12
11.2
10.1

45.7
49.9
53.9
59.3

0.098
0.099
0.1
0.101

33A
36A
39A
43A

P6SMB47AT3
P6SMB51AT3
P6SMB56AT3
P6SMB62AT3

44.7
48.5
53.2
58.9

47
51
56
62

49.4
53.6
58.8
65.1

1
1
1
1

40.2
43.6
47.8
53

5
5
5
5

9.3
8.6
7.8
7.1

64.8
70.1
77
85

0.101
0.102
0.103
0.104

47A
51A
56A
62A

P6SMB68AT3
P6SMB75AT3
P6SMB82AT3
P6SMB91AT3

64.6
71.3
77.9
86.5

68
75
82
91

71.4
78.8
86.1
95.5

1
1
1
1

58.1
64.1
70.1
77.8

5
5
5
5

6.5
5.8
5.3
4.8

92
103
113
125

0.104
0.105
0.105
0.106

68A
75A
82A
91A

P6SMB100AT3
P6SMB110AT3
P6SMB120AT3
P6SMB130AT3

95
105
114
124

100
110
120
130

105
116
126
137

1
1
1
1

85.5
94
102
111

5
5
5
5

4.4
4
3.6
3.3

137
152
165
179

0.106
0.107
0.107
0.107

100A
110A
120A
130A

P6SMB150AT3
P6SMB160AT3
P6SMB180AT3
P6SMB200AT3

143
152
171
190

150
160
180
200

158
168
189
210

1
1
1
1

128
136
154
171

5
5
5
5

2.9
2.7
2.4
2.2

207
219
246
274

0.108
0.108
0.108
0.108

150A
160A
180A
200A

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
37

TVS in Surface Mount (continued)


Table 18. P6SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Breakdown Voltage
VBR @ IT
Volts (Note 2)
Device

Min

Nom

Max

mA

Working
Peak
Reverse
Voltage
VRWM
Volts
(Note 1)

Maximum
Reverse
Surge
Current
IPP
Amps
(Note 3)

Maximum
Reverse
Leakage
@ VRWM
IR
A

Maximum
Reverse
Voltage
@ IPP
(Clamping
Voltage)
VC
Volts

Maximum
Temperature
Coefficient
of VBR
%/C

Device
Marking







SMB
CASE 403A
PLASTIC

 




  
P6SMB11CAT3
P6SMB12CAT3
P6SMB13CAT3

10.5
11.4
12.4

11
12
13

11.6
12.6
13.7

1
1
1

9.4
10.2
11.1

5
5
5

38
36
33

15.6
16.7
18.2

0.075
0.078
0.081

11C
12C
13C

P6SMB15CAT3
P6SMB16CAT3
P6SMB18CAT3
P6SMB20CAT3

14.3
15.2
17.1
19

15
16
18
20

15.8
16.8
18.9
21

1
1
1
1

12.8
13.6
15.3
17.1

5
5
5
5

28
27
24
22

21.2
22.5
25.2
27.7

0.084
0.086
0.088
0.09

15C
16C
18C
20C

P6SMB22CAT3
P6SMB24CAT3
P6SMB27CAT3
P6SMB30CAT3

20.9
22.8
25.7
28.5

22
24
27
30

23.1
25.2
28.4
31.5

1
1
1
1

18.8
20.5
23.1
25.6

5
5
5
5

20
18
16
14.4

30.6
33.2
37.5
41.4

0.092
0.094
0.096
0.097

22C
24C
27C
30C

P6SMB33CAT3
P6SMB36CAT3
P6SMB39CAT3
P6SMB43CAT3

31.4
34.2
37.1
40.9

33
36
39
43

34.7
37.8
41
45.2

1
1
1
1

28.2
30.8
33.3
36.8

5
5
5
5

13.2
12
11.2
10.1

45.7
49.9
53.9
59.3

0.098
0.099
0.1
0.101

33C
36C
39C
43C

P6SMB47CAT3
P6SMB51CAT3
P6SMB56CAT3
P6SMB62CAT3

44.7
48.5
53.2
58.9

47
51
56
62

49.4
53.6
58.8
65.1

1
1
1
1

40.2
43.6
47.8
53

5
5
5
5

9.3
8.6
7.8
7.1

64.8
70.1
77
85

0.101
0.102
0.103
0.104

47C
51C
56C
62C

P6SMB68CAT3
P6SMB75CAT3
P6SMB82CAT3
P6SMB91CAT3

64.6
71.3
77.9
86.5

68
75
82
91

71.4
78.8
86.1
95.5

1
1
1
1

58.1
64.1
70.1
77.8

5
5
5
5

6.5
5.8
5.3
4.8

92
103
113
125

0.104
0.105
0.105
0.106

68C
75C
82C
91C

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
38

TVS in Surface Mount (continued)


Table 19. SMBJ12AON Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Working
Peak
Reverse
Voltage
VRWM
Volts
(Note 1)

Breakdown Voltage
VBR @ IT
Volts (Note 2)
Device

Min

Nom

Max

mA

Maximum
Reverse
Leakage
@ VRWM
IR
A

Maximum
Reverse
Surge
Current
IPP
Amps
(Note 3)

Maximum
Reverse
Voltage
@ IPP
(Clamping
Voltage)
VC
Volts

17.5

15.6







SMB
CASE 403A
PLASTIC

 




  
SMBJ12AON

13.2

13.75

14.3

12

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.

http://onsemi.com
39

TVS in Surface Mount (continued)


Table 20. 1SMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 V Max @ IF = 100 A) (Note 4)

Device

Working
Peak
Reverse
Voltage
VR
Volts (Note 1)

Breakdown Voltage*

Maximum
Clamping
Voltage
VC @ Ipp
Volts

VBR @ IT
Volts (Min)
(Note 2)

mA

Peak
Pulse Current
Ipp
Amps
(Note 3)

Maximum
Reverse Leakage
@ VR
IR
A

Device
Marking







SMC
CASE 403B
PLASTIC

 




  
1SMC5.0AT3
1SMC6.0AT3
1SMC6.5AT3
1SMC7.0AT3

5.0
6.0
6.5
7.0

6.40
6.67
7.22
7.78

10
10
10
10

9.2
10.3
11.2
12.0

163.0
145.6
133.9
125.0

1000
1000
500
200

GDE
GDG
GDK
GDM

1SMC7.5AT3
1SMC8.0AT3
1SMC8.5AT3
1SMC9.0AT3

7.5
8.0
8.5
9.0

8.33
8.89
9.44
10.0

1.0
1.0
1.0
1.0

12.9
13.6
14.4
15.4

116.3
110.3
104.2
97.4

100
50
20
10

GDP
GDR
GDT
GDV

1SMC10AT3
1SMC12AT3
1SMC13AT3

10
12
13

11.1
13.3
14.4

1.0
1.0
1.0

17.0
19.9
21.5

88.2
75.3
69.7

5.0
5.0
5.0

GDX
GEE
GEG

1SMC14AT3
1SMC15AT3
1SMC16AT3
1SMC17AT3

14
15
16
17

15.6
16.7
17.8
18.9

1.0
1.0
1.0
1.0

23.2
24.4
26.0
27.6

64.7
61.5
57.7
53.3

5.0
5.0
5.0
5.0

GEK
GEM
GEP
GER

1SMC18AT3
1SMC20AT3
1SMC22AT3
1SMC24AT3

18
20
22
24

20.0
22.2
24.4
26.7

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

51.4
46.3
42.2
38.6

5.0
5.0
5.0
5.0

GET
GEV
GEX
GEZ

1SMC26AT3
1SMC28AT3
1SMC30AT3
1SMC33AT3

26
28
30
33

28.9
31.1
33.3
36.7

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

35.6
33.0
31.0
28.1

5.0
5.0
5.0
5.0

GFE
GFG
GFK
GFM

1SMC36AT3
1SMC40AT3
1SMC43AT3
1SMC45AT3

36
40
43
45

40.0
44.4
47.8
50.0

1.0
1.0
1.0
1.0

58.1
64.5
69.4
72.7

25.8
23.2
21.6
20.6

5.0
5.0
5.0
5.0

GFP
GFR
GFT
GFV

1SMC48AT3
1SMC51AT3
1SMC54AT3
1SMC58AT3

48
51
54
58

53.3
56.7
60.0
64.4

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

19.4
18.2
17.2
16.0

5.0
5.0
5.0
5.0

GFX
GFZ
GGE
GGG

1SMC60AT3
1SMC64AT3
1SMC70AT3
1SMC75AT3

60
64
70
75

66.7
71.1
77.8
83.3

1.0
1.0
1.0
1.0

96.8
103
113
121

15.5
14.6
13.3
12.4

5.0
5.0
5.0
5.0

GGK
GGM
GGP
GGR

1SMC78AT3

78

86.7

1.0

126

11.4

5.0

GGT

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
40

TVS in Surface Mount (continued)


Table 21. 1.5 SMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power
@ 1 ms Surge (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (VF = 3.5 V Max, IF = 100 A for all types) (Note 4)
Breakdown Voltage
VBR @ IT
Volts (Note 2)
Device

Min

Nom

Max

mA

Working
Peak
Reverse
Voltage
VRWM
Volts
(Note 1)

Maximum
Reverse
Surge
Current
IPP
Amps
(Note 3)

Maximum
Reverse
Leakage
@ VRWM
IR
A

Maximum
Reverse
Voltage
@ IPP
(Clamping
Voltage)
VC
Volts

Maximum
Temperature
Coefficient
of VBR
%/C

Device
Marking







SMC
CASE 403
PLASTIC

 




  
1.5SMC6.8AT3
1.5SMC7.5AT3
1.5SMC8.2AT3
1.5SMC9.1AT3

6.45
7.13
7.79
8.65

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

5.8
6.4
7.02
7.78

1000
500
200
50

143
132
124
112

10.5
11.3
12.1
13.4

0.057
0.061
0.065
0.068

6V8A
7V5A
8V2A
9V1A

1.5SMC10AT3
1.5SMC12AT3
1.5SMC13AT3

9.5
11.4
12.4

10
12
13

10.5
12.6
13.7

1
1
1

8.55
10.2
11.1

10
5
5

103
90
82

14.5
16.7
18.2

0.073
0.078
0.081

10A
12A
13A

1.5SMC15AT3
1.5SMC16AT3
1.5SMC18AT3
1.5SMC20AT3

14.3
15.2
17.1
19

15
16
18
20

15.8
16.8
18.9
21

1
1
1
1

12.8
13.6
15.3
17.1

5
5
5
5

71
67
59.5
54

21.2
22.5
25.2
27.7

0.084
0.086
0.088
0.09

15A
16A
18A
20A

1.5SMC22AT3
1.5SMC24AT3
1.5SMC27AT3
1.5SMC30AT3

20.9
22.8
25.7
28.5

22
24
27
30

23.1
25.2
28.4
31.5

1
1
1
1

18.8
20.5
23.1
25.6

5
5
5
5

49
45
40
36

30.6
33.2
37.5
41.4

0.092
0.094
0.096
0.097

22A
24A
27A
30A

1.5SMC33AT3
1.5SMC36AT3
1.5SMC39AT3
1.5SMC43AT3

31.4
34.2
37.1
40.9

33
36
39
43

34.7
37.8
41
45.2

1
1
1
1

28.2
30.8
33.3
36.8

5
5
5
5

33
30
28
25.3

45.7
49.9
53.9
59.3

0.098
0.099
0.1
0.101

33A
36A
39A
43A

1.5SMC47AT3
1.5SMC51AT3
1.5SMC56AT3
1.5SMC62AT3

44.7
48.5
53.2
58.9

47
51
56
62

49.4
53.6
58.8
65.1

1
1
1
1

40.2
43.6
47.8
53

5
5
5
5

23.2
21.4
19.5
17.7

64.8
70.1
77
85

0.101
0.102
0.103
0.104

47A
51A
56A
62A

1.5SMC68AT3
1.5SMC75AT3
1.5SMC82AT3
1.5SMC91AT3

64.6
71.3
77.9
86.5

68
75
82
91

71.4
78.8
86.1
95.5

1
1
1
1

58.1
64.1
70.1
77.8

5
5
5
5

16.3
14.6
13.3
12

92
103
113
125

0.104
0.105
0.105
0.106

68A
75A
82A
91A

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 s exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
Devices listed in bold, italic are ON Semiconductor preferred devices.

http://onsemi.com
41

Multiple TVS Duals in Surface Mount


MMBZ15VDLT1 Common Cathode Series
Table 22. SOT23 Bipolar Zener Overvoltage Transient Suppressor; 40 Watts Peak Power (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
BIDIRECTIONAL (Circuit tied to Pins 1 and 2)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
VBR (Note 5)
(V)

Device
Min

Nom

@ IT
(mA)

Max

Reverse
Voltage
Working
Peak
VRWM
(V)

CASE 31808
TO236AB
LOW PROFILE SOT23

Max
Reverse
Surge
Current
IPP
(A)

Max
Reverse
Leakage
Current
IR (nA)

Max Reverse
Voltage @ IPP
(Clamping
Voltage)
VC
(V)

Maximum
Temperature
Coefficient of
VBR
(mV/C)

1
3
2

MMBZ15VDLT1

14.3

15

15.8

1.0

12.8

100

1.9

21.2

12

27

28.35

1.0

22

50

1.0

38

26

(VF = 1.1 V Max @ IF = 200 mA)


MMBZ27VCLT1

25.65

5. VBR measured at pulse test current IT at an ambient temperature of 25C.

MMBZ5V6ALT1 Common Anode Series


Table 23. SOT23 Dual Zener Overvoltage Transient Suppressor; 24 Watts Peak Power (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Device

VBR (Note 6)
(V)
Min

Nom

@ IT
(mA)

Max Reverse
Leakage
Current

Max Zener Impedance


(Note 7)

IR @ VR
(A)
(V)

ZZT @ IZT
()
(mA)

ZZK @ IZK
()
(mA)

Max
Reverse
Surge
Current
IPP
(A)

Max

CASE 31808
STYLE 12
LOW PROFILE SOT23
PLASTIC




Max
Reverse
Voltage @
IPP
(Clamping
Voltage)
VC
(V)

Max
Temp
Coefficient
of VBR
(mV/ C)
(mV/C)

1
3
2

MMBZ5V6ALT1

5.32

5.6

5.88

20

5.0

3.0

11

1600

0.25

3.0

8.0

1.26

MMBZ6V2ALT1

5.89

6.2

6.51

1.0

0.5

3.0

2.76

8.7

2.80

MMBZ6V8ALT1

6.46

6.8

7.14

1.0

0.5

4.5

2.5

9.6

3.40

MMBZ9V1ALT1

8.65

9.1

9.56

1.0

0.3

6.0

1.7

14

7.50

6. VBR measured at pulse test current IT at an ambient temperature of 25C.


7. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

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42

Multiple TVS Duals in Surface Mount (continued)


MMBZ5V6ALT1 Common Anode Series
Table 24. SOT23 Dual Zener Overvoltage Transient Suppressor; 40 Watts Peak Power (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
VBR (Note 8)
(V)

Device

Min

Nom

@ IT
(mA)
Max

Reverse
Voltage
Working
Peak
VRWM
(Volts)

Max
Reverse
Leakage
Current
IR (nA)

CASE 31808
STYLE 12
LOW PROFILE SOT23
PLASTIC




Max
Reverse
Surge
Current
IPP
(A)

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)
VC
(V)

Maximum
Temperature
Coefficient
of VBR
(mV/C)

1
3
2

MMBZ12VALT1

11.40

12

12.60

1.0

8.5

200

2.35

17

7.50

MMBZ15VALT1

14.25

15

15.75

1.0

12.0

50

1.9

21

12.30

MMBZ18VALT1

17.10

18

18.90

1.0

14.5

50

1.6

25

15.30

MMBZ20VALT1

19.00

20

21.00

1.0

17.0

50

1.4

28

17.20

MMBZ27VALT1

25.65

27

28.35

1.0

22.0

50

1.0

40

24.30

MMBZ33VALT1

31.35

33

34.65

1.0

26.0

50

0.87

46

30.40

8. VBR measured at pulse test current IT at an ambient temperature of 25C.

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43

Multiple TVS Duals in Surface Mount (continued)


SM05T1 Common Anode Series
Table 25. SOT23 Dual Zener Overvoltage Transient Suppressor; 300 Watts Peak Power (8 x 20 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
Breakdown Voltage
VBR (Note 9)
(V)

Device

Min

Nom

@ IT
(mA)
Max

Reverse
Voltage
Working
Peak
VRWM
(Volts)

Max
Reverse
Leakage
Current
IR (mA)

CASE 31808
STYLE 12
LOW PROFILE SOT23
PLASTIC




Max
Reverse
Surge
Current
IPP
(A)

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)
VC
(V)

Typical
Capacitance
(pF)
Pin 1 to 3
@ 0 Volts

1
3
2

SM05T1

6.2

6.75

7.3

1.0

5.0

10

17

9.8

225

SM12T1

13.3

14.5

15.75

1.0

12

1.0

12

19

95

Max
Reverse
Leakage
Current
IR
(mA @ 5 V)

Maximum
Temperature
Coefficient
of VBR
(mV/C)

9. VBR measured at pulse test current IT at an ambient temperature of 25C.

MA3075WALT1 Common Anode Series


Table 26. SOT23 Dual Zener Overvoltage Transient Suppressor
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
VBR (Note 10)
(V)

Device
Min




MA3075WALT1

Nom

@ IT
(mA)
Max

CASE 31808
STYLE 12
LOW PROFILE SOT23
PLASTIC
7.2

7.5

10. VBR measured at pulse test current IT at an ambient temperature of 25C.

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44

1
3
2

7.9

5.0

1.0

5.3

Multiple TVS Duals in Surface Mount (continued)


DF3A6.8FUT1 Common Anode Series
Table 27. SC70/SOT323 Dual Zener Overvoltage Transient Suppressor; 24 Watts Peak Power (10 x 1000 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Max Reverse
Leakage
Current

Breakdown Voltage
Device

VBR (Note 11)


(V)
Min

Nom

@ IT
(mA)

Max Zener Impedance


(Note 12)

IR @ VR
(A)
(V)

ZZT @ IZT
()
(mA)

ZZK @ IZK
()
(mA)

Max
Reverse
Surge
Current
IPP
(A)

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)
VC
(V)

2.0

9.6

Max
1

CASE 41904
SC70 (SOT323)

DF3A6.8FUT1

6.4

6.8

7.2

5.0

0.5

3
2

5.0

50

200

0.5

11. VBR measured at pulse test current IT at an ambient temperature of 25C.


12. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

NZL5V6AXV3T1 Common Anode Series


Table 28. SC89 Dual Zener Overvoltage Transient Suppressor
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Max Reverse
Leakage
Current

Breakdown Voltage
Device

VBR (Note 13)


(V)
Min

Nom

Max

@ IT
(mA)

IR @ VR
(A)

(V)

Max Zener Impedance


(Note 14)

ZZT @ IZT
()

(mA)

ZZK @ IZK
()

(mA)

CASE 463C03
SC89

3
2

NZL5V6AXV3T1

5.32

5.6

5.88

5.0

5.0

3.0

40

200

1.0

NZL6V8AXV3T1

6.46

6.8

7.14

5.0

1.0

4.5

15

100

1.0

NZL7V5AXV3T1

7.12

7.5

7.88

5.0

1.0

5.0

15

100

1.0

13. VBR measured at pulse test current IT at an ambient temperature of 25C.


14. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

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45

Multiple TVS Quads in Surface Mount


MMQA Series
Table 29. SC74 Quad Transient Voltage Suppressor; 24 Watts Peak Power (10 x 1000 ms),
150 Watts Peak Power (8.0 x 20 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6)
(VF = 0.9 V Max @ IF = 10 mA)

Max Reverse
Leakage Current

Breakdown Voltage

VZT (V)
Device

Min

Nom

Max

@ IZT

IR

VRWM

(mA)

(nA)

(V)

Max Zener
Impedance

ZZT @ IZT
()
(mA)

CASE 318F-05
STYLE 1
SC-74 PLASTIC

Max
Reverse
Surge
Current

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)

Max
Temp
Coefficient
of VZ

IPP
(A)

VC
(V)

(mV/C)

MMQA5V6T1

5.32

5.6

5.88

1.0

2000

3.0

400

3.0

8.0

1.26

MMQA6V2T1,T3

5.89

6.2

6.51

1.0

700

4.0

300

2.66

9.0

10.6

MMQA6V8T1

6.46

6.8

7.14

1.0

500

4.3

300

2.45

9.8

10.9

MMQA12VT1

11.4

12

12.6

1.0

75

9.1

80

1.39

17.3

14

MMQA13VT1,T3

12.4

13

13.7

1.0

75

9.8

80

1.29

18.6

15

MMQA15VT1

14.3

15

15.8

1.0

75

11

80

1.1

21.7

16

MMQA18VT1

17.1

18

18.9

1.0

75

14

80

0.923

26

19

MMQA20VT1,T3

19

20

21

1.0

75

15

80

0.84

28.6

20.1

MMQA21VT1

20

21

22.1

1.0

75

16

80

0.792

30.3

21

MMQA22VT1

20.9

22

23.1

1.0

75

17

80

0.758

31.7

22

MMQA24VT1

22.8

24

25.2

1.0

75

18

100

0.694

34.6

25

MMQA27VT1

25.7

27

28.4

1.0

75

21

125

0.615

39

28

MMQA30VT1

28.5

30

31.5

1.0

75

23

150

0.554

43.3

32

MMQA33VT1,T3

31.4

33

34.7

1.0

75

25

200

0.504

48.6

37

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46

Multiple TVS Quads in Surface Mount (continued)


Table 30. SC74 Quad Transient Voltage Suppressor; 40 Watts Peak Power (10 x 1000 ms),
350 Watts Peak Power (8.0 x 20 ms)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6)
(VF = 0.9 V Max @ IF = 10 mA)

Max Reverse
Leakage Current

Breakdown Voltage

VZT (V)
Device

Min

Nom

Max

@ IZT

IR

VRWM

(mA)

(mA)

(V)

Max
Reverse
Surge
Current
8 x 20 ms

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)

Max
Reverse
Surge
Current
10 x 1000 ms

Max
Reverse
Voltage @
IPP
(Clamping
Voltage)

IPP
(A)

VC
(V)

IPP
(A)

VC
(V)

CASE 318F-05
STYLE 1
SC-74 PLASTIC

SMS05T1

6.0

6.6

7.2

20

5.0

23

15.5

5.0

9.8

SMS12T1

13.3

14.2

15

1 mA

12

5.0

19

15

23

1.25

SMS15T1

16.7

17.6

18.5

1 mA

15

5.0

24

12

29

1.25

SMS24T1

26.7

29.3

32

1 mA

24

5.0

40

44

1.25

MSQA6V1W5
Table 31. SC88A/SOT353 Quad Array for ESD Protection; 150 Watts (8.0 x 20 ms)

Device

Breakdown Voltage
VBR @ 1.0 mA (Volts)
Min

Nom

Leakage Current
IR @ VRWM = 3.0 V

Typical
Capacitance
@ 0 V Bias

Max
VF @ IF = 200 mA

(A)

(pF)

(V)

Max

1
CASE 419A
SC88A/SOT353

2
3

MSQA6V1W5

6.1

6.6

7.2

1.0

NOTE: Contact ON Semiconductor Sales for additional voltages.

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47

4
90

1.25

Multiple TVS Quads in Surface Mount (continued)


DF6A6.8FU
Table 32. SC88 Quad Array for ESD Protection

Device

Breakdown Voltage
VBR @ 1.0 mA (Volts)
Min

Nom

Maximum Leakage
Current
IR @ VRWM = 5 V

Typical
Capacitance
@ 0 V Bias

Max
VF @ IF = 10 mA

(A)

(pF)

(V)

Max

CASE 419B
SC88 (SOT363)
PLASTIC

DF6A6.8FU

6.4

6.8

7.2

1.0

NOTE: Contact ON Semiconductor Sales for additional voltages.

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48

40

1.25

CHAPTER 2
Data Sheets

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49


  
     
  
  
 
Unidirectional*
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The SMC series is designed to protect voltage sensitive


components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMC series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:

PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8 78 VOLTS
1500 WATT PEAK POWER

Cathode

Working Peak Reverse Voltage Range 5.8 to 77.8 V


Standard Zener Breakdown Voltage Range 6.8 to 91 V
Peak Power 1500 Watts @ 1.0 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Maximum Temperature Coefficient Specified
Response Time is Typically < 1.0 ns
PbFree Packages are Available

Anode

SMC
CASE 403
PLASTIC

MARKING DIAGRAM

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

YWW
xxxA
Y
WW
xxxA

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by molded polarity notch
MOUNTING POSITION: Any

ORDERING INFORMATION
Device**
1.5SMCxxxAT3

MAXIMUM RATINGS

1.5SMCxxxAT3G

Please See the Table on the Following Page

= Year
= Work Week
= Specific Device Code
= (See Table on Page 52)

Package

Shipping

SMC

2500/Tape & Reel

SMC
(PbFree)

2500/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Bidirectional devices will not be available in this series.
**The T3 suffix refers to a 13 inch reel.
Individual devices are listed on page 52 of this data sheet.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 5

50

Publication Order Number:


1.5SMC6.8AT3/D

1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from JunctiontoLead

Symbol

Value

Unit

PPK

1500

PD

4.0

RqJL

54.6
18.3

mW/C
C/W
W
mW/C
C/W

DC Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance from JunctiontoAmbient

PD
RqJA

0.75
6.1
165

Forward Surge Current (Note 4) @ TA = 25C

IFSM

200

TJ, Tstg

65 to +150

Operating and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 100 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

5. 1/2 sine wave or equivalent, PW = 8.3 ms


nonrepetitive duty cycle

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51

1.5SMC6.8AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage

VC @ IPP (Note 8)

VRWM
(Note 6)

IR @VRWM

@ IT

VC

IPP

QVBR

Volts

mA

Min

Nom

Max

mA

Volts

Amps

%/C

VBR Volts (Note 7)

Device

Device
Marking

1.5SMC6.8AT3
1.5SMC7.5AT3
1.5SMC8.2AT3
1.5SMC9.1AT3

6V8A
7V5A
8V2A
9V1A

5.8
6.4
7.02
7.78

1000
500
200
50

6.45
7.13
7.79
8.65

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

10.5
11.3
12.1
13.4

143
132
124
112

0.057
0.061
0.065
0.068

1.5SMC10AT3
1.5SMC11AT3
1.5SMC12AT3
1.5SMC13AT3

10A
11A
12A
13A

8.55
9.4
10.2
11.1

10
5
5
5

9.5
10.5
11.4
12.4

10
11
12
13

10.5
11.6
12.6
13.7

1
1
1
1

14.5
15.6
16.7
18.2

103
96
90
82

0.073
0.075
0.078
0.081

1.5SMC15AT3
1.5SMC15AT3G
1.5SMC16AT3
1.5SMC18AT3
1.5SMC20AT3

15A
15A
16A
18A
20A

12.8
12.8
13.6
15.3
17.1

5
5
5
5
5

14.3
14.3
15.2
17.1
19

15
15
16
18
20

15.8
15.8
16.8
18.9
21

1
1
1
1
1

21.2
21.2
22.5
25.2
27.7

71
71
67
59.5
54

0.084
0.084
0.086
0.088
0.09

1.5SMC22AT3
1.5SMC24AT3
1.5SMC27AT3
1.5SMC30AT3

22A
24A
27A
30A

18.8
20.5
23.1
25.6

5
5
5
5

20.9
22.8
25.7
28.5

22
24
27
30

23.1
25.2
28.4
31.5

1
1
1
1

30.6
33.2
37.5
41.4

49
45
40
36

0.092
0.094
0.096
0.097

1.5SMC33AT3
1.5SMC36AT3
1.5SMC39AT3
1.5SMC43AT3

33A
36A
39A
43A

28.2
30.8
33.3
36.8

5
5
5
5

31.4
34.2
37.1
40.9

33
36
39
43

34.7
37.8
41
45.2

1
1
1
1

45.7
49.9
53.9
59.3

33
30
28
25.3

0.098
0.099
0.1
0.101

1.5SMC47AT3
1.5SMC51AT3
1.5SMC56AT3
1.5SMC62AT3
1.5SMC62AT3G

47A
51A
56A
62A

40.2
43.6
47.8
53
53

5
5
5
5
5

44.7
48.5
53.2
58.9
58.9

47
51
56
62
62

49.4
53.6
58.8
65.1
65.1

1
1
1
1
1

64.8
70.1
77
85
85

23.2
21.4
19.5
17.7
17.7

0.101
0.102
0.103
0.104
0.104

1.5SMC68AT3
1.5SMC75AT3
1.5SMC82AT3
1.5SMC91AT3

68A
75A
82A
91A

58.1
64.1
70.1
77.8

5
5
5
5

64.6
71.3
77.9
86.5

68
75
82
91

71.4
78.8
86.1
95.5

1
1
1
1

92
103
113
125

16.3
14.6
13.3
12

0.104
0.105
0.105
0.106

NOTE:

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future
use and best overall value.
* The G suffix indicates PbFree package available.
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 1500 Watt at the beginning of this group.

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52

1.5SMC6.8AT3 Series

    !
"#
 %&!'

(%  ')"  

"#
 %+ (   
+'+
&
(&  %(  ( &/
"  +&5
 '  ,

6  m


&/ !&#" . 

!&#"-

Ppk, PEAK POWER (kW)





(&#' !&#" .





, m

 m

 m

 m

 

 

 * "#
 %+ (

*   

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform





IT, TEST CURRENT (AMPS)

&/ "#
+ & )-'
&/ %  "  0 & 1 





2









3









!4 6 616,26 66!


6!
6!
6!
36!

#616
 6166m




6!



26!






,

, ,3 







D!4 * 
& &"
 &
  !4 &4! !4   !#


&* & 4   & "  

Figure 4. Dynamic Impedance

Figure 3. Pulse Derating Curve

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-Withstand
test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

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53

1.5SMC6.8AT3 Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMC series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

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54

1.5SMC6.8AT3 Series
TYPICAL PROTECTION CIRCUIT
7 

! 

LOAD

Vin (TRANSIENT)

!#

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 5.

Figure 6.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 ms

0.02
10 ms
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 7. Typical Derating Factor for Duty Cycle

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55

  !   
  " #E $
    % 
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
siliconoxide passivated junctions. All this in an axiallead,
transfermolded plastic package that offers protection in all common
environmental conditions.
Specification Features:

http://onsemi.com

Cathode

Anode

Zener Voltage Range 3.3 V to 200 V


ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of up to 180 W @ 8.3 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters

Mechanical Characteristics:
CASE: Void free, transfermolded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

AXIAL LEAD
CASE 17
PLASTIC

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

MARKING DIAGRAM
L
1N
53xxB
YWW

MAXIMUM RATINGS
Rating
Max. Steady State Power Dissipation
@ TL = 75C, Lead Length = 3/8
Derate above 75C
Operating and Storage
Temperature Range

Symbol

Value

Unit

PD

40

mW/C

65 to
+200

TJ, Tstg

L
1N53xxB
Y
WW

= Assembly Location
= Device Code
= (See Table Next Page)
= Year
= Work Week

ORDERING INFORMATION
Device

Package

Shipping

1N53xxB

Axial Lead

1000 Units/Box

1N53xxBRL

Axial Lead

4000/Tape & Reel

1N53xxBTA*

Axial Lead

2000/Ammo Pack

*1N5361B Not Available in 2000/Ammo Pack


For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2003

December, 2003 Rev. 3

56

Publication Order Number:


1N5333B/D

1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Breakdown Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IR

Maximum Surge Current @ TA = 25C

DVZ

Reverse Zener Voltage Change

IZM

Maximum DC Zener Current

VZ VR

V
IR VF
IZT

Zener Voltage Regulator

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57

1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Impedance (Note 2)

Leakage
Current

@ IZT

ZZT @ IZT

IR @ VR

Zener Voltage (Note 2)


VZ (Volts)

ZZK @ IZK

IZK

IR
(Note 3)

D Z
DV
(Note 4)

IZM
(Note 5)

Device
(Note 1)

Device
Marking

Min

Nom

Max

mA

mA

mA Max

Volts

Volts

mA

1N5333B
1N5334B
1N5335B
1N5336B
1N5337B

1N5333B
1N5334B
1N5335B
1N5336B
1N5337B

3.14
3.42
3.71
4.09
4.47

3.3
3.6
3.9
4.3
4.7

3.47
3.78
4.10
4.52
4.94

380
350
320
290
260

3
2.5
2
2
2

400
500
500
500
450

1
1
1
1
1

300
150
50
10
5

1
1
1
1
1

20
18.7
17.6
16.4
15.3

0.85
0.8
0.54
0.49
0.44

1440
1320
1220
1100
1010

1N5338B
1N5339B
1N5340B
1N5341B
1N5342B

1N5338B
1N5339B
1N5340B
1N5341B
1N5342B

4.85
5.32
5.70
5.89
6.46

5.1
5.6
6.0
6.2
6.8

5.36
5.88
6.30
6.51
7.14

240
220
200
200
175

1.5
1
1
1
1

400
400
300
200
200

1
1
1
1
1

1
1
1
1
10

1
2
3
3
5.2

14.4
13.4
12.7
12.4
11.5

0.39
0.25
0.19
0.1
0.15

930
865
790
765
700

1N5343B
1N5344B
1N5345B
1N5346B
1N5347B

1N5343B
1N5344B
1N5345B
1N5346B
1N5347B

7.13
7.79
8.27
8.65
9.50

7.5
8.2
8.7
9.1
10

7.88
8.61
9.14
9.56
10.5

175
150
150
150
125

1.5
1.5
2
2
2

200
200
200
150
125

1
1
1
1
1

10
10
10
7.5
5

5.7
6.2
6.6
6.9
7.6

10.7
10
9.5
9.2
8.6

0.15
0.2
0.2
0.22
0.22

630
580
545
520
475

1N5348B
1N5349B
1N5350B
1N5351B
1N5352B

1N5348B
1N5349B
1N5350B
1N5351B
1N5352B

10.45
11.4
12.35
13.3
14.25

11
12
13
14
15

11.55
12.6
13.65
14.7
15.75

125
100
100
100
75

2.5
2.5
2.5
2.5
2.5

125
125
100
75
75

1
1
1
1
1

5
2
1
1
1

8.4
9.1
9.9
10.6
11.5

8.0
7.5
7.0
6.7
6.3

0.25
0.25
0.25
0.25
0.25

430
395
365
340
315

1N5353B
1N5354B
1N5355B
1N5356B
1N5357B

1N5353B
1N5354B
1N5355B
1N5356B
1N5357B

15.2
16.15
17.1
18.05
19

16
17
18
19
20

16.8
17.85
18.9
19.95
21

75
70
65
65
65

2.5
2.5
2.5
3
3

75
75
75
75
75

1
1
1
1
1

1
0.5
0.5
0.5
0.5

12.2
12.9
13.7
14.4
15.2

6.0
5.8
5.5
5.3
5.1

0.3
0.35
0.4
0.4
0.4

295
280
264
250
237

1N5358B
1N5359B
1N5360B
1N5361B*
1N5362B

1N5358B
1N5359B
1N5360B
1N5361B
1N5362B

20.9
22.8
23.75
25.65
26.6

22
24
25
27
28

23.1
25.2
26.25
28.35
29.4

50
50
50
50
50

3.5
3.5
4
5
6

75
100
110
120
130

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

16.7
18.2
19
20.6
21.2

4.7
4.4
4.3
4.1
3.9

0.45
0.55
0.55
0.6
0.6

216
198
190
176
170

1. TOLERANCE AND TYPE NUMBER DESIGNATION


The JEDEC type numbers shown indicate a tolerance of 5%.
2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior to reading. Mounting contacts are located 3/8
to 1/2 from the inside edge of mounting clips to the body of the diode (TA = 25C +8C, 2C).
3. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (TA = 25C +8C, 2C).
4. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 10 ms. Mounting contact located as specified
in Note 2 (TA = 25C +8C, 2C).
5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the Bsuffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device
body.
*Not Available in the 2000/Ammo Pack.

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58

1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Voltage (Note 7)
VZ (Volts)

Zener Impedance (Note 7)

@ IZT

ZZT @ IZT

ZZK @ IZK

IZK

Leakage
Current
IR @ VR

IR
(Note 8)

D Z
DV
(Note 9)

IZM
(Note 10)

Device
(Note 6)

Device
Marking

Min

Nom

Max

mA

mA

mA Max

Volts

Volts

mA

1N5363B
1N5364B
1N5365B
1N5366B
1N5367B

1N5363B
1N5364B
1N5365B
1N5366B
1N5367B

28.5
31.35
34.2
37.05
40.85

30
33
36
39
43

31.5
34.65
37.8
40.95
45.15

40
40
30
30
30

8
10
11
14
20

140
150
160
170
190

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

22.8
25.1
27.4
29.7
32.7

3.7
3.5
3.5
3.1
2.8

0.6
0.6
0.65
0.65
0.7

158
144
132
122
110

1N5368B
1N5369B
1N5370B
1N5371B
1N5372B

1N5368B
1N5369B
1N5370B
1N5371B
1N5372B

44.65
48.45
53.2
57
58.9

47
51
56
60
62

49.35
53.55
58.8
63
65.1

25
25
20
20
20

25
27
35
40
42

210
230
280
350
400

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

35.8
38.8
42.6
45.5
47.1

2.7
2.5
2.3
2.2
2.1

0.8
0.9
1.0
1.2
1.35

100
93
86
79
76

1N5373B
1N5374B
1N5375B
1N5376B
1N5377B

1N5373B
1N5374B
1N5375B
1N5376B
1N5377B

64.6
71.25
77.9
82.65
86.45

68
75
82
87
91

71.4
78.75
86.1
91.35
95.55

20
20
15
15
15

44
45
65
75
75

500
620
720
760
760

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

51.7
56
62.2
66
69.2

2.0
1.9
1.8
1.7
1.6

1.52
1.6
1.8
2.0
2.2

70
63
58
54.5
52.5

1N5378B
1N5379B
1N5380B
1N5381B
1N5382B

1N5378B
1N5379B
1N5380B
1N5381B
1N5382B

95
104.5
114
123.5
133

100
110
120
130
140

105
115.5
126
136.5
147

12
12
10
10
8

90
125
170
190
230

800
1000
1150
1250
1500

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

76
83.6
91.2
98.8
106

1.5
1.4
1.3
1.2
1.2

2.5
2.5
2.5
2.5
2.5

47.5
43
39.5
36.6
34

1N5383B
1N5384B
1N5385B
1N5386B
1N5387B

1N5383B
1N5384B
1N5385B
1N5386B
1N5387B

142.5
152
161.5
171
180.5

150
160
170
180
190

157.5
168
178.5
189
199.5

8
8
8
5
5

330
350
380
430
450

1500
1650
1750
1750
1850

1
1
1
1
1

0.5
0.5
0.5
0.5
0.5

114
122
129
137
144

1.1
1.1
1.0
1.0
0.9

3.0
3.0
3.0
4.0
5.0

31.6
29.4
28
26.4
25

1N5388B

1N5388B

190

200

210

480

1850

0.5

152

0.9

5.0

23.6

6. TOLERANCE AND TYPE NUMBER DESIGNATION


The JEDEC type numbers shown indicate a tolerance of 5%.
7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior to reading. Mounting contacts are located 3/8
to 1/2 from the inside edge of mounting clips to the body of the diode (TA = 25C +8C, 2C).
8. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (TA = 25C +8C, 2C).
9. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 10 ms. Mounting contact located as specified
in Note 7 (TA = 25C +8C, 2C).
10. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the Bsuffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device
body.

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59

8#*8" 9 9#&+ ( &# 



&:%

1N5333B Series





#


 & 5 & ( '


+"  
( ")(
( & (+ #&+


,
,
,
,2
#* #&+ #) (  (&
/ (

Figure 1. Typical Thermal Resistance






!7 *   & " ''


!:0 7

!7 *   & " ''


!:0 7

TEMPERATURE COEFFICIENTS







&)


.


3


2
!7* 7 !# &) 0 7 !#




&)








Figure 2. Temperature Coefficient-Range


for Units 3 to 10 Volts





 2     2


!7* 7 !# &) 0 7 !#


 

Figure 3. Temperature Coefficient-Range


for Units 10 to 220 Volts

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60

8# *+* &
  ( &# 

&
8" 9 9#&+ :%

1N5333B Series



+ 1 ,

+ 1 ,



,



+ 1 ,



+ 1 ,
+ 1 ,

+" 5 5#* + 1 :

)# "#
 D 8# 1 q8# /
   ! "#

D 8# 1 q8#* + /

 < 4#% ,


+* ( &#
 < 

 " ! 
& #&4#
 <  &5 #&+ #) ( #,

+1
,
,


,


,

,

,

,









*   
+


Figure 4. Typical Thermal Response


L, Lead Length = 3/8 Inch



  * &/
" )"  &


  * &/
" )"  &



%6166=



%6162,6=




,

=
>"&  %&!

%6166=

,
,

%6166=


2 







 2 







,

!76166!
# + '  ' & 
)!  ')"  

,
,



!7616,6!



 &# !7 !

Figure 5. Maximum Non-Repetitive Surge Current


versus Nominal Zener Voltage
(See Note 3)


%* "#
 %+ ( 



Figure 6. Peak Surge Current versus Pulse Width


(See Note 3)


616

616

616

 7 *7 "  &

 7 *7 "  &





,




3
2
!7* 7 !# &) !#






,





Figure 7. Zener Voltage versus Zener Current


VZ = 3.3 thru 10 Volts







!7* 7 !# &) !#


3

Figure 8. Zener Voltage versus Zener Current


VZ = 11 thru 75 Volts

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61

2

 7 *7 "  &

1N5333B Series





,

2







2
!7* 7 !# &) !#






Figure 9. Zener Voltage versus Zener Current


VZ = 82 thru 200 Volts

APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:

For worst-case design, using expected limits of IZ, limits


of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ

qVZ, the zener voltage temperature coefficient, is found


from Figures 2 and 3.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.

TL = qLA PD + TA

qLA is the lead-to-ambient thermal resistance and PD is the


power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL

DTJL is the increase in junction temperature above the lead


temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD

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62

 &
  '   

    


Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

http://onsemi.com

Cathode

Anode

Specification Features:

Working Peak Reverse Voltage Range 5 V


Peak Power 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
Response Time is Typically < 1 ns

AXIAL LEAD
CASE 41A
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

L
1N
5908
YYWW

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

L = Assembly Location
1N5908 = JEDEC Device Code
YY = Year
WW = Work Week

MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ TL 25C
Steady State Power Dissipation
@ TL 75C, Lead Length = 3/8
Derated above TL = 75C

Symbol

Value

Unit

PPK

1500

Watts

PD

5.0

Watts

50

mW/C

ORDERING INFORMATION

Thermal Resistance, JunctiontoLead

RqJL

20

C/W

Forward Surge Current (Note 2.)


@ TA = 25C

IFSM

200

Amps

TJ, Tstg

65 to
+175

Operating and Storage


Temperature Range

Device

Package

Shipping

1N5908

Axial Lead

500 Units/Box

1N5908RL4

Axial Lead

1500/Tape & Reel

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25C


per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
* Bidirectional device will not be available in this device

Semiconductor Components Industries, LLC, 2002

February, 2002 Rev. 3

63

Publication Order Number:


1N5908/D

1N5908
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 53 A)

Device
(Note 4.)
1N5908

Breakdown Voltage

VC (Volts) (Note 7.)

VRWM
(Note 5.)

IR @ VRWM

(Volts)

(A)

Min

Nom

Max

(mA)

@ IPP = 120 A

@ IPP = 60 A

@ IPP = 30 A

5.0

300

6.0

1.0

8.5

8.0

7.6

VBR

(Note 6.) (Volts)

@ IT

NOTES:
3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25C and minimum voltages in VBR are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data 1500 W at the beginning of this group

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64



/ * &/ % ?%

    !
"#
 %&!'

(%  ')"  

&/ "#
+ & )-'
&/ %  "  0 &1 

1N5908





,6

6

6

6

 

2






 





3
   3 
&* & 4   & "  

 * "#
 %+ (

Figure 2. Pulse Derating Curve

&/ !&#" . 



:2

!&#"-

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5
 '  ,

 6

:2




(&#' !&#" .















3
   3
#* #&+   & "  



Figure 4. Pulse Waveform


,3
,
,
,

"#
 %+ (
 

,
,3
,

 

,

 

,
,
,

 
,

,


*   

Figure 3. Steady State Power Derating

+ & )'& 

+ *
&+5
&  % +

 & %&


Figure 1. Pulse Rating Curve




+* +" 5 5# -







Figure 5. Typical Derating Factor for Duty Cycle

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65

1N5908
APPLICATION NOTES
RESPONSE TIME

circuit layout, minimum lead lengths and placing the


suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 5. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 5 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 5 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

TYPICAL PROTECTION CIRCUIT


7 

#&+

! 

!   &
 

!#

!
( +" 
+" ! ''

!   &
 
!#

!#

! 
@
+ 1   +#&5 +"  & & ! ''


Figure 6.

Figure 7.

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66

1N5908
CLIPPER BIDIRECTIONAL DEVICES
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a CA suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.

1. Clipper-bidirectional devices are available in the


1.5KEXXA series and are designated with a CA
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for VF which does not apply).

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67

 & !   
 ()*$ " #E 
    % 
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of siliconoxide passivated junctions. All this in an axiallead,
transfermolded plastic package that offers protection in all common
environmental conditions.
Specification Features:

Zener Voltage Range 3.3 V to 200 V


ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package

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Cathode

Mechanical Characteristics:
CASE: Void free, transfermolded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

Anode

AXIAL LEAD
CASE 59
PLASTIC

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

MARKING DIAGRAM
L
1N59
xxB
YYWW

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Max. Steady State Power Dissipation


@ TL = 75C, Lead Length = 3/8
Derate above 75C

PD

24

mW/C

Steady State Power Dissipation


@ TA = 50C
Derate above 50C

PD

6.67

mW/C

TJ, Tstg

65 to
+200

Operating and Storage


Temperature Range

L
1N59xxB
YY
WW

= Assembly Location
= Device Code
= (See Table Next Page)
= Year
= Work Week

ORDERING INFORMATION
Device

Package

Shipping

1N59xxB

Axial Lead

2000 Units/Box

1N59xxBRL

Axial Lead

6000/Tape & Reel

1N59xxBRR1 

Axial Lead

2000/Tape & Reel

1N59xxBRR2 

Axial Lead

2000/Tape & Reel

 Polarity band up with cathode lead off first


 Polarity band down with cathode lead off first
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

February, 2002 Rev. 2

68

Publication Order Number:


1N5913B/D

1N5913B Series
ELECTRICAL CHARACTERISTICS

(TL = 30C unless otherwise noted,


VF = 1.5 V Max @ IF = 200 mAdc for all types)
Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Breakdown Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IZM

Maximum DC Zener Current

VZ VR

V
IR VF
IZT

Zener Voltage Regulator

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69

1N5913B Series
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2)
VZ (Volts)

Zener Impedance (Note 3)

Leakage Current

@ IZT

ZZT @ IZT

Max

mA

mA

A Max

Volts

mA

3.3
4.7
5.6
6.2
6.8

3.47
4.94
5.88
6.51
7.14

113.6
79.8
66.9
60.5
55.1

10
5
2
2
2.5

500
500
250
200
200

1
1
1
1
1

100
5
5
5
5

1
1.5
3
4
5.2

454
319
267
241
220

7.79
8.65
9.50
10.45
11.40

8.2
9.1
10
11
12

8.61
9.56
10.50
11.55
12.60

45.7
41.2
37.5
34.1
31.2

3.5
4
4.5
5.5
6.5

400
500
500
550
550

0.5
0.5
0.25
0.25
0.25

5
5
5
1
1

6.5
7
8
8.4
9.1

182
164
150
136
125

1N5929B
1N5930B
1N5931B
1N5932B
1N5933B

14.25
15.20
17.10
19.00
20.90

15
16
18
20
22

15.75
16.80
18.90
21.00
23.10

25.0
23.4
20.8
18.7
17.0

9
10
12
14
17.5

600
600
650
650
650

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

11.4
12.2
13.7
15.2
16.7

100
93
83
75
68

1N5934B
1N5935B
1N5936B
1N5937B
1N5938B

1N5934B
1N5935B
1N5936B
1N5937B
1N5938B

22.80
25.65
28.50
31.35
34.20

24
27
30
33
36

25.20
28.35
31.50
34.65
37.80

15.6
13.9
12.5
11.4
10.4

19
23
28
33
38

700
700
750
800
850

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

18.2
20.6
22.8
25.1
27.4

62
55
50
45
41

1N5940B
1N5941B
1N5942B
1N5943B
1N5944B

1N5940B
1N5941B
1N5942B
1N5943B
1N5944B

40.85
44.65
48.45
53.20
58.90

43
47
51
56
62

45.15
49.35
53.55
58.80
65.10

8.7
8.0
7.3
6.7
6.0

53
67
70
86
100

950
1000
1100
1300
1500

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

32.7
35.8
38.8
42.6
47.1

34
31
29
26
24

1N5945B
1N5946B
1N5947B
1N5948B
1N5950B

1N5945B
1N5946B
1N5947B
1N5948B
1N5950B

64.60
71.25
77.90
86.45
104.5

68
75
82
91
110

71.40
78.75
86.10
95.55
115.5

5.5
5.0
4.6
4.1
3.4

120
140
160
200
300

1700
2000
2500
3000
4000

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

51.7
56
62.2
69.2
83.6

22
20
18
16
13

1N5951B
1N5952B
1N5953B
1N5954B
1N5955B

1N5951B
1N5952B
1N5953B
1N5954B
1N5955B

114
123.5
142.5
152
171

120
130
150
160
180

126
136.5
157.5
168
189

3.1
2.9
2.5
2.3
2.1

380
450
600
700
900

4500
5000
6000
6500
7000

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

91.2
98.8
114
121.6
136.8

12
11
10
9
8

1N5956B

1N5956B

190

200

210

1.9

1200

8000

0.25

152

Device
(Note 1)

Device
Marking

Min

Nom

1N5913B
1N5917B
1N5919B
1N5920B
1N5921B

1N5913B
1N5917B
1N5919B
1N5920B
1N5921B

3.14
4.47
5.32
5.89
6.46

1N5923B
1N5924B
1N5925B
1N5926B
1N5927B

1N5923B
1N5924B
1N5925B
1N5926B
1N5927B

1N5929B
1N5930B
1N5931B
1N5932B
1N5933B

ZZK @ IZK

IR @ VR

IZM

1. TOLERANCE AND TYPE NUMBER DESIGNATION


Tolerance designation device tolerance of 5% are indicated by a B suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30C 1C,
3/8 from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.

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70

PD, STEADY STATE DISSIPATION (WATTS)

1N5913B Series


# 1 #&+ #) (
 (&
/

# 1 :2


# 1 :2




# 1 









2    
TL, LEAD TEMPERATURE (C)

2



Figure 1. Power Temperature Derating Curve

8#*+ &
  ( &# 

&
8" 9 9#&+:%




3





,3
,

+ 1,
,
,

+" 5 5#* + 1:

,
,

 < 4#% ,


+* ( &#


 " ! 
& #&4#
 &5 #&+ #) ( #,

+1

,
, ,



,

,

,

,

,

,
,
,
*   
+


,

,

)# "#
 8# 1 8#  /
   ! "#

8# 1 8# *+
,



*
/ &/
" ) % %&


/

 * !
#&/&) &@0!
&

'+#,(& , &4#

Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

 &)"#&
    !
%&!'
8616 
  &# "#










,

, , ,

 


%* "#
 %+ ( 

  




,

,
,
,

,
,
,
,



& 1 

,
,
,

& 1 

Figure 3. Maximum Surge Power



 
 &# !7 !#






Figure 4. Typical Reverse Leakage

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71



1N5913B Series
APPLICATION NOTE
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.

Since the actual voltage available from a given zener


diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:

TJL = JL PD

For worst-case design, using expected limits of IZ, limits


of PD and the extremes of TJ (TJ) may be estimated.
Changes in voltage, VZ, can then be found from:

TL = LA PD + TA

LA is the lead-to-ambient thermal resistance (C/W) and PD


is the power dissipation. The value for LA will vary and
depends on the device mounting method. LA is generally
3040C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:

V = VZ TJ

VZ, the zener voltage temperature coefficient, is found


from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.

TJ = TL + TJL

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72

1N5913B Series
TEMPERATURE COEFFICIENT RANGES




2


&)



.
.

!7*   & " '' !:0

!7*   & " '' !:0

(90% of the Units are in the Ranges Indicated)


3
2
;

!7* 7 !# &) 0 7 !#





















!7* 7 !# &) 0 7 !#


Figure 5. Units To 12 Volts



Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT














*7 "  &


7

*7 "  &


7

(Figures 7, 8 and 9)






,
,
,
,




3
!7* 7 !# &) !#







,
,
,
,









*7 "  &


7




,
,
,








!7* 7 !# &) !#


;



Figure 8. VZ = 12 thru 82 Volts



8#*8" 9 9#&+ ( &# 



& :%

Figure 7. VZ = 3.3 thru 10 Volts





3
2
!7* 7 !# &) !#


2
3


#






 & 5 & ( '


+"  
( ")(
( & (+ #&+




Figure 9. VZ = 100 thru 400 Volts

:2

:
:2
:
:2
:
#* #&+ #) (  (&
/ (

3:2

Figure 10. Typical Thermal Resistance

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73

 +,   
  '   

  
 
Unidirectional*
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Mosorb devices are designed to protect voltage sensitive


components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Cathode

Anode

Specification Features:

Working Peak Reverse Voltage Range 5.8 V to 214 V


Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns

AXIAL LEAD
CASE 41A
PLASTIC

L
1N6
xxxA
1.5KE
xxxA
YYWW

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

ORDERING INFORMATION
Device

MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 4)
@ TL 25C
Steady State Power Dissipation
@ TL 75C, Lead Length = 3/8
Derated above TL = 75C

Symbol

Value

Unit

PPK

1500

Watts

PD

5.0

Watts

20

mW/C

Thermal Resistance, JunctiontoLead

RqJL

20

C/W

Forward Surge Current (Note 5)


@ TA = 25C

IFSM

200

Amps

TJ, Tstg

65 to
+175

Operating and Storage


Temperature Range

Package

Shipping

1.5KExxxA

Axial Lead

500 Units/Box

1.5KExxxARL4

Axial Lead

1500/Tape & Reel

1N6xxxA

Axial Lead

500 Units/Box

1N6xxxARL4*

Axial Lead

1500/Tape & Reel

*1N6302A Not Available in 1500/Tape & Reel


Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

4. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per
Figure 2.
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

Semiconductor Components Industries, LLC, 2002

June, 2002 Rev. 5

74

Publication Order Number:


1N6267A/D

1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max., IF (Note 6) = 100 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

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75

1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 100 A)
Breakdown Voltage

VC @ IPP (Note 10)

VRWM
(Note 8)

IR @ VRWM

@ IT

VC

IPP

QVBR

(Volts)

(mA)

Min

Nom

Max

(mA)

(Volts)

(A)

(%/C)

Device

JEDEC
Device
(Note 7)

1.5KE6.8A
1.5KE7.5A
1.5KE8.2A
1.5KE9.1A

1N6267A
1N6268A
1N6269A
1N6270A

5.8
6.4
7.02
7.78

1000
500
200
50

6.45
7.13
7.79
8.65

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

10.5
11.3
12.1
13.4

143
132
124
112

0.057
0.061
0.065
0.068

1.5KE10A
1.5KE11A
1.5KE12A
1.5KE13A

1N6271A
1N6272A
1N6273A
1N6274A

8.55
9.4
10.2
11.1

10
5
5
5

9.5
10.5
11.4
12.4

10
11
12
13

10.5
11.6
12.6
13.7

1
1
1
1

14.5
15.6
16.7
18.2

103
96
90
82

0.073
0.075
0.078
0.081

1.5KE15A
1.5KE16A
1.5KE18A
1.5KE20A

1N6275A
1N6276A
1N6277A
1N6278A

12.8
13.6
15.3
17.1

5
5
5
5

14.3
15.2
17.1
19

15
16
18
20

15.8
16.8
18.9
21

1
1
1
1

21.2
22.5
25.2
27.7

71
67
59.5
54

0.084
0.086
0.088
0.09

1.5KE22A
1.5KE24A
1.5KE27A
1.5KE30A

1N6279A
1N6280A
1N6281A
1N6282A

18.8
20.5
23.1
25.6

5
5
5
5

20.9
22.8
25.7
28.5

22
24
27
30

23.1
25.2
28.4
31.5

1
1
1
1

30.6
33.2
37.5
41.4

49
45
40
36

0.092
0.094
0.096
0.097

1.5KE33A
1.5KE36A
1.5KE39A
1.5KE43A

1N6283A
1N6284A
1N6285A
1N6286A

28.2
30.8
33.3
36.8

5
5
5
5

31.4
34.2
37.1
40.9

33
36
39
43

34.7
37.8
41
45.2

1
1
1
1

45.7
49.9
53.9
59.3

33
30
28
25.3

0.098
0.099
0.1
0.101

1.5KE47A
1.5KE51A
1.5KE56A
1.5KE62A

1N6287A
1N6288A
1N6289
1N6290A

40.2
43.6
47.8
53

5
5
5
5

44.7
48.5
53.2
58.9

47
51
56
62

49.4
53.6
58.8
65.1

1
1
1
1

64.8
70.1
77
85

23.2
21.4
19.5
17.7

0.101
0.102
0.103
0.104

1.5KE68A
1.5KE75A
1.5KE82A
1.5KE91A

1N6291A
1N6292A
1N6293A
1N6294A

58.1
64.1
70.1
77.8

5
5
5
5

64.6
71.3
77.9
86.5

68
75
82
91

71.4
78.8
86.1
95.5

1
1
1
1

92
103
113
125

16.3
14.6
13.3
12

0.104
0.105
0.105
0.106

1.5KE100A
1.5KE110A
1.5KE120A
1.5KE130A

1N6295A
1N6296A
1N6297A
1N6298A

85.5
94
102
111

5
5
5
5

95
105
114
124

100
110
120
130

105
116
126
137

1
1
1
1

137
152
165
179

11
9.9
9.1
8.4

0.106
0.107
0.107
0.107

1.5KE150A
1.5KE160A
1.5KE170A
1.5KE180A

1N6299A
1N6300A
1N6301A
1N6302A*

128
136
145
154

5
5
5
5

143
152
162
171

150
160
170
180

158
168
179
189

1
1
1
1

207
219
234
246

7.2
6.8
6.4
6.1

0.108
0.108
0.108
0.108

1.5KE200A
1.5KE220A
1.5KE250A

1N6303A

171
185
214

5
5
5

190
209
237

200
220
250

210
231
263

1
1
1

274
328
344

5.5
4.6
5

0.108
0.109
0.109

VBR (Note 9) (Volts)

6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
7. Indicates JEDEC registered data
8. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
9. VBR measured at pulse test current IT at an ambient temperature of 25C
10. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel

http://onsemi.com
76



/ * &/ % ?%




 
   ! 

&/ "#
+ & )-'
&/ %  "  0 & 1

1N6267A Series





,6m

6m

6m

6m

 

2





 





 * "#
 %+ (

Figure 1. Pulse Rating Curve

Figure 2. Pulse Derating Curve

1N6373, ICTE-5, MPTE-5,


through
1N6389, ICTE-45, C, MPTE-45, C
*

1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
*

 "
# $

 "
# $


*& & &A'

*& & &A'


 " 




3
   3 
&* & 4   & "  





 " 









!4 * 4 &/+% !# &) !#








!4 * 4 &/+% !# &) !#




:2




*!&#"-

:2


 
   



 
 


   
 m



+ *
&+5
&  % +

 & %&


Figure 3. Capacitance versus Breakdown Voltage

&/ !&#" . 



(&#' !&#" .















3
   3
#* #&+   & "  



*   

Figure 4. Steady State Power Derating

Figure 5. Pulse Waveform

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77

1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
!4  616,2 B 6!
6!
6!
6!

%&
%m










 * 
"  &


 * 
"  &





1.5KE6.8CA
through
1.5KE200CA



6!
36!





26!



6!

,
, ,3 


 3 
 
D!4 * 
& &"
 &
  !4 &4! !4   !#


!4  616,2 B 6!


6!
6!

%&
%m

,
, ,3 


 3 
 
D!4 * 
& &"
 &
  !4 &4! !4   !#


Figure 6. Dynamic Impedance



,3
,
+ & )'& 

,
,

"#
 %+ (
 

,
,3
,

 

,

 m

,
,
,

 m
,

,




+* +" 5 5# -







Figure 7. Typical Derating Factor for Duty Cycle

APPLICATION NOTES
RESPONSE TIME

application, since the main purpose for adding a transient


suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or

http://onsemi.com
78

1N6267A Series
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

ambient temperature rises above 25C. The average power


derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than

TYPICAL PROTECTION CIRCUIT


7 

#&+

! 

!   &
 

!#

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

!   &
 
!#

!#

! 
@
+ 1   +#&5 +"  & & ! ''


Figure 8.

Figure 9.

UL RECOGNITION*
Conditioning, Temperature test, Dielectric VoltageWithstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance

*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA

CLIPPER BIDIRECTIONAL DEVICES


3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a CA suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.

1. Clipper-bidirectional devices are available in the


1.5KEXXA series and are designated with a CA
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for VF which does not apply).

http://onsemi.com
79

  , *      
-.
/* * .
/* 0

/*1*1
/*$2
     
'   
 
  

http://onsemi.com

Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Cathode

AXIAL LEAD
CASE 41A
PLASTIC
L
MPTE
xx
1N
63xx
YYWW

Specification Features:

Anode

Working Peak Reverse Voltage Range 5 V to 45 V


Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
Response Time is Typically < 1 ns

L
ICTE
xx
YYWW
L = Assembly Location
MPTExx = ON Device Code
ICTExx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

ORDERING INFORMATION
Device

MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ TL 25C
Steady State Power Dissipation
@ TL 75C, Lead Length = 3/8
Derated above TL = 75C

Symbol

Value

Unit

PPK

1500

Watts

PD

5.0

Watts

20

mW/C

Thermal Resistance, JunctiontoLead

RqJL

20

C/W

Forward Surge Current (Note 2.)


@ TA = 25C

IFSM

200

Amps

TJ, Tstg

65 to
+175

Operating and Storage


Temperature Range

*Please see 1N6382 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C)


for Bidirectional Devices

Semiconductor Components Industries, LLC, 2002

June, 2002 Rev. 2

80

Package

Shipping

MPTExx

Axial Lead

500 Units/Box

MPTExxRL4

Axial Lead

1500/Tape & Reel

ICTExx

Axial Lead

500 Units/Box

ICTExxRL4

Axial Lead

1500/Tape & Reel

1N63xx

Axial Lead

500 Units/Box

1N63xxRL4*

Axial Lead

1500/Tape & Reel

NOTES:
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maximum.
*1N6378 Not Available in 1500/Tape & Reel

Publication Order Number:


1N6373/D

1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)


ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Variation of VBR

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
VRWM
(Note 4.)

IR @
VRWM

(Volts)

1N6373
MPTE5

1N6374
(MPTE8)

1N6374
MPTE8

1N6375
(MPTE10)

JEDEC
Device
(ON Device)

Device
Marking

1N6373
(MPTE5)

Breakdown Voltage

VC @ IPP (Note 6.)

VC (Volts) (Note 6.)

VBR (Note 5.) (Volts)

@ IT

VC

IPP

(mA)

Min

Nom

Max

(mA)

(Volts)

(A)

@ IPP =
1A

@ IPP =
10 A

(mV/C)

5.0

300

6.0

1.0

9.4

160

7.1

7.5

4.0

8.0

25

9.4

1.0

15

100

11.3

11.5

8.0

1N6375
MPTE10

10

2.0

11.7

1.0

16.7

90

13.7

14.1

12

1N6376
(MPTE12)

1N6376
MPTE12

12

2.0

14.1

1.0

21.2

70

16.1

16.5

14

1N6377
(MPTE15)

1N6377
MPTE15

15

2.0

17.6

1.0

25

60

20.1

20.6

18

1N6378*
(MPTE18)

1N6378*
MPTE18

18

2.0

21.2

1.0

30

50

24.2

25.2

21

1N6379
(MPTE22)

1N6379
MPTE22

22

2.0

25.9

1.0

37.5

40

29.8

32

26

1N6380
(MPTE36)

1N6380
MPTE36

36

2.0

42.4

1.0

65.2

23

50.6

54.3

50

1N6381
(MPTE45)

1N6381
MPTE45

45

2.0

52.9

1.0

78.9

19

63.3

70

60

ICTE5
ICTE10
ICTE12

ICTE5
ICTE10
ICTE12

5.0
10
12

300
2.0
2.0

6.0
11.7
14.1

1.0
1.0
1.0

9.4
16.7
21.2

160
90
70

7.1
13.7
16.1

7.5
14.1
16.5

4.0
8.0
12

ICTE15
ICTE18
ICTE22
ICTE36

ICTE15
ICTE18
ICTE22
ICTE36

15
18
22
36

2.0
2.0
2.0
2.0

17.6
21.2
25.9
42.4

1.0
1.0
1.0
1.0

25
30
37.5
65.2

60
50
40
23

20.1
24.2
29.8
50.6

20.6
25.2
32
54.3

14
18
21
26

QVBR

NOTES:
3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25C and minimum voltage in VBR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel

http://onsemi.com
81



/ * &/ % ?%




 
   ! 

&/ "#
+ & )-'
&/ %  "  0 & 1

1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)





,6m

6m

6m

6m

 

2





 





3
   3 
&* & 4   & "  

 * "#
 %+ (

Figure 1. Pulse Rating Curve

Figure 2. Pulse Derating Curve

1N6373, ICTE-5, MPTE-5,


through
1N6389, ICTE-45, C, MPTE-45, C
*

 "
# $

*& & &A'


 " 










!4 * 4 &/+% !# &) !#




:2




*!&#"-

:2


 
   



 
 


   

  m

+ *
&+5
&  % +

 & %&


Figure 3. Capacitance versus Breakdown Voltage

&/ !&#" . 



(&#' !&#" .















3
   3
#* #&+   & "  



*   

Figure 4. Steady State Power Derating

Figure 5. Pulse Waveform

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82

1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)


1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C










 * 
"  &


!4  616, B ,36!
;6!
,6!
,6!

%&
%m

36!




26!



6!





,
, ,3 


 3 
 
D!4 * 
& &"
 &
  !4 &4! !4   !#


Figure 6. Dynamic Impedance



,3
,
,
,

"#
 %+ (
 

,
,3
,

 

,

 m

,
,
,

 m
,

,

6!



,
, ,3 


 3 
 
D!4 * 
& &"
 &
  !4 &4! !4   !#


!4  616,2 B 6!


6!
6!

%&
%m



+ & )'& 

 * 
"  &





1.5KE6.8CA
through
1.5KE200CA




+* +" 5 5# -





Figure 7. Typical Derating Factor for Duty Cycle

http://onsemi.com
83



1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)


APPLICATION NOTES
RESPONSE TIME

circuit layout, minimum lead lengths and placing the


suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

TYPICAL PROTECTION CIRCUIT


7 

#&+

! 

!   &
 

!#

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

!   &
 
!#

!#

! 
@
+ 1   +#&5 +"  & & ! ''


Figure 8.

Figure 9.

http://onsemi.com
84



3
  
  
 
  
)/%.
/ #
The 1PMT5.0AT1/T3 Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low Zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heatsink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it
is ideal for use in cellular phones, portable devices, business
machines, power supplies and many other industrial/consumer
applications.

http://onsemi.com

PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 58 V
200 W PEAK POWER
1

2
1: CATHODE
2: ANODE

Specification Features:

Standoff Voltage: 5 V 58 V
Peak Power 200 W @ 1 ms (1PMT5.0A 1PMT36A)

175 W @ 1 ms (1PMT40A 1PMT58A)


Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile Maximum Height of 1.1 mm
Integral Heatsink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint Footprint Area of 8.45 mm2
POWERMITE is JEDEC Registered as DO216AA
Cathode Indicated by Polarity Band
PbFree Package is Available

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

POWERMITE
CASE 457
PLASTIC


MARKING DIAGRAM

1
CATHODE
Mxx
xx
D

260C for 10 Seconds

D
2
ANODE

= Specific Device Code


= 5 58
= (See Table Next Page)
= Date Code

LEAD ORIENTATION IN TAPE:


Cathode (Short) Lead to Sprocket Holes
ORDERING INFORMATION
Device

MOUNTING POSITION: Any


MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

Mxx

Package

Shipping

1PMT5.0AT1

POWERMITE 3,000/Tape & Reel

1PMT5.0AT3

POWERMITE 12,000/Tape & Reel

1PMT5.0AT3G POWERMITE 12,000/Tape & Reel


(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

August, 2004 Rev. 8

85

Publication Order Number:


1PMT5.0AT3/D

1PMT5.0AT1/T3 Series
MAXIMUM RATINGS
Symbol

Value

Unit

Maximum Ppk Dissipation, (PW10/1000 ms) (Note 1) (1PMT5.0A 1PMT36A)

Rating

Ppk

200

Maximum Ppk Dissipation, (PW10/1000 ms) (Note 1) (1PMT40A 1PMT58A)

Ppk

175

Maximum Ppk Dissipation, (PW8/20 ms) (Note 1)

Ppk

1000

DC Power Dissipation @ TA = 25C (Note 2)


Derate above 25C
Thermal Resistance from JunctiontoAmbient

PD
RqJA

500
4.0
248

mW
mW/C
C/W

Thermal Resistance from JunctiontoLead (Anode)

RqJanode

35

C/W

Maximum DC Power Dissipation (Note 3)


Thermal Resistance from JunctiontoTab (Cathode)

PD
RqJcathode

3.2
23

W
C/W

Operating and Storage Temperature Range


TJ, Tstg
55 to +150
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse at TA = 25C.
2. Mounted with recommended minimum pad size, DC board FR4.
3. At Tab (Cathode) temperature, Ttab = 75C

ELECTRICAL CHARACTERISTICS (TA = 25C unless


otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 35 A)
Symbol

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

IR
VBR

IF

Parameter

IPP

VRWM

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

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86

1PMT5.0AT1/T3 Series
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
VRWM

VBR @ IT (V) (Note 6)

IT

IR @ VRWM

VC @ IPP

IPP (A)

Marking

(Note 5)

Min

Nom

Max

(mA)

(mA)

(V)

(Note 7)

1PMT5.0AT1, T3

MKE

5.0

6.4

6.7

7.0

10

50

9.2

21.7

1PMT7.0AT1, T3

MKM

7.0

7.78

8.2

8.6

10

30

12

16.7

1PMT12AT1, T3

MLE

12

13.3

14.0

14.7

1.0

1.0

19.9

10.1

1PMT16AT1, T3

MLP

16

17.8

18.75

19.7

1.0

1.0

26

7.7

1PMT18AT1, T3

MLT

18

20.0

21.0

22.1

1.0

1.0

29.2

6.8

1PMT22AT1, T3

MLX

22

24.4

25.6

26.9

1.0

1.0

35.5

5.6

1PMT24AT1, T3

MLZ

24

26.7

28.1

29.5

1.0

1.0

38.9

5.1

1PMT26AT1, T3

MME

26

28.9

30.4

31.9

1.0

1.0

42.1

4.8

1PMT28AT1, T3

MMG

28

31.1

32.8

34.4

1.0

1.0

45.4

4.4

1PMT30AT1, T3

MMK

30

33.3

35.1

36.8

1.0

1.0

48.4

4.1

1PMT33AT1, T3

MMM

33

36.7

38.7

40.6

1.0

1.0

53.3

3.8

1PMT36AT1, T3

MMP

36

40.0

42.1

44.2

1.0

1.0

58.1

3.4

1PMT40AT1, T3

MMR

40

44.4

46.8

49.1

1.0

1.0

64.5

2.7

1PMT48AT1, T3

MMX

48

53.3

56.1

58.9

1.0

1.0

77.4

2.3

1PMT51AT1, T3

MMZ

51

56.7

59.7

62.7

1.0

1.0

82.4

2.1

1PMT58AT1, T3

MNG

58

64.4

67.8

71.2

1.0

1.0

93.6

1.9

Device

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at ambient temperature of 25C.
7. Surge current waveform per Figure 2 and derate per Figure 4.

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87

1PMT5.0AT1/T3 Series
TYPICAL PROTECTION CIRCUIT
7 

#&+

! 

!#

*





&/ !&#" . 

!&#"-

* &/ % %&






6  m


(&#' !&#" .







"#
 %+ (   
+'+
&
(&  %(  ( &/
"  +&5
 ' 
,







;
-' &/ "#
" 

,





Figure 2. 10 X 1000 ms Pulse Waveform



&/ !&#" 
0 2 m



(&#' !&#" 
: 0  m








Figure 1. Pulse Rating Curve

3

*   

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m



 * "#
 %+ ( m

2



*

&/ "#
+ & )-'
&/ %  "  0 & 1 












2





2





3





&* & 4   & "  

*   m

Figure 3. 8 X 20 ms Pulse Waveform

Figure 4. Pulse Derating Curve

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88



P D , MAXIMUM POWER DISSIPATION (W)

1PMT5.0AT1/T3 Series
1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 ms

0.02
10 ms
0.01

0.1 0.2

0.5

10

20

50 100

3.5
3
2.5
2
TL
1.5
1
0.5
0
25

75

100

125

150

175

T, TEMPERATURE (C)

D, DUTY CYCLE (%)

Figure 5. Typical Derating Factor for Duty Cycle

Figure 6. Steady State Power Derating

10,000

1.2
1.0

C, CAPACITANCE (pF)

V F, TYPICAL FORWARD VOLTAGE (VOLTS)

50

0.8
0.6
0.4

1000
MEASURED @ ZERO BIAS

MEASURED @ 50% VRWM

100

0.2
10

0
55

25

85

150

T, TEMPERATURE (C)

10
WORKING PEAK REVERSE VOLTAGE (VOLTS)

Figure 7. Forward Voltage

Figure 8. Capacitance versus Working Peak


Reverse Voltage

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89

100


&+!   
+  #
4# 
)/%.
/ #
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles (1.1
mm) in the industry. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines and many other
industrial/consumer applications.

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PLASTIC SURFACE MOUNT


3.2 WATT ZENER DIODES
6.2 47 VOLTS

Features

Zener Breakdown Voltage: 6.2 47 V


DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75C
Low Leakage < 5 mA
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint Footprint Area of 8.45 mm2

2
1: CATHODE
2: ANODE

Supplied in 12 mm Tape and Reel


T1 = 3,000 Units per Reel
T3 = 12,000 Units per Reel
POWERMITE is JEDEC Registered as DO216AA
Cathode Indicated by Polarity Band
PbFree Packages are Available

POWERMITE
CASE 457
PLASTIC

MARKING DIAGRAM

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

1
CATHODE
xxB
xx
D

xxB

D
2
ANODE

= Specific Device Code


= 20 41
= (See Table Next Page)
= Date Code

ORDERING INFORMATION
Shipping

Device

Package

1PMT59xxBT1

POWERMITE

3,000/Tape&Reel

1PMT59xxBT1G POWERMITE
(PbFree)

3,000/Tape&Reel

1PMT59xxBT3

POWERMITE 12,000/Tape&Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 91 of this data sheet.

LEAD ORIENTATION IN TAPE:


Cathode (Short) Lead to Sprocket Holes
Semiconductor Components Industries, LLC, 2004

May, 2004 Rev. 2

90

Publication Order Number:


1PMT5920B/D

1PMT5920B Series
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

PD
RqJA

500
4.0
248

mW
mW/C
C/W

Thermal Resistance from JunctiontoLead (Anode)

RqJanode

35

C/W

Maximum DC Power Dissipation (Note 2)


Thermal Resistance from JunctiontoTab (Cathode)

PD
RqJcathode

3.2
23

W
C/W

DC Power Dissipation @ TA = 25C (Note 1)


Derate above 25C
Thermal Resistance from JunctiontoAmbient

Operating and Storage Temperature Range


TJ, Tstg
55 to +150
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR4.
2. At Tab (Cathode) temperature, Ttab = 75C

ELECTRICAL CHARACTERISTICS (TL = 25C unless

otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
Zener Voltage (Note 3)
VZ @ IZT (Volts)

ZZT @ IZT
(Note 4)

ZZK @ IZK
(Note 4)

Max

IZT
(mA)

IR @ VR
(mA)

VR
(V)

(W)

(W)

IZK
(mA)

6.51

60.5

5.0

4.0

2.0

200

1.0

6.8

7.14

55.1

5.0

5.2

2.5

200

1.0

7.12

7.5

7.88

50

5.0

6.0

3.0

400

0.5

23B

7.79

8.2

8.61

45.7

5.0

6.5

3.5

400

0.5

1PMT5924BT1, T3

24B

8.64

9.1

9.56

41.2

5.0

7.0

4.0

500

0.5

1PMT5925BT1, T3

25B

9.5

10

10.5

37.5

5.0

8.0

4.5

500

0.25

Device

Device
Marking

Min

Nom

1PMT5920BT1, G*, T3

20B

5.89

6.2

1PMT5921BT1, T3

21B

6.46

1PMT5922BT1, T3

22B

1PMT5923BT1, T3

1PMT5927BT1, T3

27B

11.4

12

12.6

31.2

1.0

9.1

6.5

550

0.25

1PMT5929BT1, G*, T3

29B

14.25

15

15.75

25

1.0

11.4

9.0

600

0.25

1PMT5930BT1, T3

30B

15.2

16

16.8

23.4

1.0

12.2

10

600

0.25

1PMT5931BT1, T3

31B

17.1

18

18.9

20.8

1.0

13.7

12

650

0.25

1PMT5933BT1, T3

33B

20.9

22

23.1

17

1.0

16.7

17.5

650

0.25

1PMT5934BT1, T3

34B

22.8

24

25.2

15.6

1.0

18.2

19

700

0.25

1PMT5935BT1, T3

35B

25.65

27

28.35

13.9

1.0

20.6

23

700

0.25

1PMT5936BT1, G*, T3

36B

28.5

30

31.5

12.5

1.0

22.8

28

750

0.25

1PMT5939BT1, T3

39B

37.05

39

40.95

9.6

1.0

29.7

45

900

0.25

1PMT5941BT1, T3
41B
44.65
47
49.35
8.0
1.0
35.8
67
1000
0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25C.
4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
* The G suffix indicates PbFree package available.

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91

1PMT5920B Series

3.5

100

IZ, ZENER CURRENT (mA)

P D , MAXIMUM POWER DISSIPATION (W)

TYPICAL CHARACTERISTICS

2.5
2

1.5
1

10

0.5
0

0.1
25

50

75

100

125

150

175

7
8
9
10
VZ, ZENER VOLTAGE (VOLTS)

T, TEMPERATURE (C)

Figure 2. VZ to 10 Volts
10

100
50
30
20

IZ , ZENER CURRENT (mA)

qVZ, TEMPERATURE COEFFICIENT (mV/C)

Figure 1. Steady State Power Derating

10
5
3
2
1
0.5
0.3
0.2

VZ @ IZT

6
4
2
0

0.1
0

10

20

30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)

90

100

ZZ , DYNAMIC IMPEDANCE (OHMS)

200
VZ @ IZT

100
70
50
30
20

10
10

6
8
10
VZ, ZENER VOLTAGE (VOLTS)

12

Figure 4. Zener Voltage To 12 Volts

Figure 3. VZ = 12 thru 47 Volts


qVZ, TEMPERATURE COEFFICIENT (mV/C)

11

20
30
50
70
100
VZ, ZENER VOLTAGE (VOLTS)

200
IZ(dc) = 1mA
100
70
50
30
20
10
7
5

10 mA

20 mA

3
2
5

200

Figure 5. Zener Voltage 14 To 47 Volts

iZ(rms) = 0.1 IZ(dc)

10
20
30
50
VZ, ZENER VOLTAGE (VOLTS)

Figure 6. Effect of Zener Voltage

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92

70

100

Z Z , DYNAMIC IMPEDANCE (OHMS)

1PMT5920B Series
1k
TJ = 25C
iZ(rms) = 0.1 IZ(dc)

500
200
100
50
20
10
5

22 V

12 V

1
0.5 1

6.8 V
2
5
10
20
50 100 200
500
IZ, ZENER TEST CURRENT (mA)

Figure 7. Effect of Zener Current

C, CAPACITANCE (pF)

10,000

1000
MEASURED @ 0 V BIAS
MEASURED @ 50% VR
100

10
1

10
VZ, REVERSE ZENER VOLTAGE (VOLTS)

Figure 8. Capacitance versus Reverse


Zener Voltage

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93

100

 
  
$        

  
 
Bidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.

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PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
1078 V VR
400 W PEAK POWER

Specification Features

Working Peak Reverse Voltage Range 10 V to 78 V


Standard Zener Breakdown Voltage Range 11.7 V to 91.3 V
Peak Power 400 Watts @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Response Time is Typically < 1 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
PbFree Packages are Available

SMA
CASE 403B
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are

MARKING DIAGRAM

xxC
LLYWW

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


POLARITY: Cathode polarity notch does not indicate polarity
MOUNTING POSITION: Any

xxC
LL
Y
WW

= Specific Device Code


= (See Table Next Page)
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
Device*
1SMAxxCAT3
1SMAxxCAT3G

Package

Shipping

SMA

5000/Tape & Reel

SMA
(PbFree)

5000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 96 of this data sheet.

*The T3 suffix refers to a 13 inch reel.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 6

94

Publication Order Number:


1SMA10CAT3/D

1SMA10CAT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
@ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from JunctiontoLead
DC Power Dissipation (Note 3) @ TA = 25C
Derate Above 25C
Thermal Resistance from JunctiontoAmbient

Symbol

Value

Unit

PPK

400

PD

1.5

RqJL

20
50

mW/C
C/W

RqJA

0.5
4.0
250

W
mW/C
C/W

TJ, Tstg

65 to +150

PD

Operating and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
*Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.

ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT

Parameter

IPP

IT
VC VBR VRWM IR

Working Peak Reverse Voltage

IR VRWM VBR VC
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current

IPP

BiDirectional TVS

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95

1SMA10CAT3 Series

ELECTRICAL CHARACTERISTICS
Breakdown Voltage

VC @ IPP (Note 6)

VRWM
(Note 4)

IR @ VRWM

@ IT

VC

IPP

Volts

mA

Min

Nom

Max

mA

Volts

Amps

VBR (Volts) (Note 5)

Device

Device
Marking

1SMA10CAT3
1SMA11CAT3
1SMA12CAT3
1SMA13CAT3, G*

QXC
QZC
REC
RGC

10
11
12
13

2.5
2.5
2.5
2.5

11.1
12.2
13.3
14.4

11.69
12.84
14.00
15.16

12.27
13.48
14.70
15.92

1.0
1.0
1.0
1.0

17.0
18.2
19.9
21.5

23.5
22.0
20.1
18.6

1SMA14CAT3
1SMA15CAT3, G*
1SMA16CAT3, G*

RKC
RMC
RPC

14
15
16

2.5
2.5
2.5

15.6
16.7
17.8

16.42
17.58
18.74

17.24
18.46
19.67

1.0
1.0
1.0

23.2
24.4
26.0

17.2
16.4
15.4

1SMA18CAT3
1SMA20CAT3, G*
1SMA22CAT3
1SMA24CAT3, G*

RTC
RVC
RXC
RZC

18
20
22
24

2.5
2.5
2.5
2.5

20
22.2
24.4
26.7

21.06
23.37
25.69
28.11

22.11
24.54
26.97
29.51

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

13.7
12.3
11.3
10.3

1SMA26CAT3, G*
1SMA28CAT3
1SMA30CAT3
1SMA33CAT3, G*

SEC
SGC
SKC
SMC

26
28
30
33

2.5
2.5
2.5
2.5

28.9
31.1
33.3
36.7

30.42
32.74
35.06
38.63

31.94
34.37
36.81
40.56

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

9.5
8.8
8.3
7.5

1SMA36CAT3, G*
1SMA40CAT3
1SMA43CAT3

SPC
SRC
STC

36
40
43

2.5
2.5
2.5

40
44.4
47.8

42.11
46.74
50.32

44.21
49.07
52.83

1.0
1.0
1.0

58.1
64.5
69.4

6.9
6.2
5.8

1SMA48CAT3
1SMA51CAT3
1SMA54CAT3
1SMA58CAT3, G*

SXC
SZC
TEC
TGC

48
51
54
58

2.5
2.5
2.5
2.5

53.3
56.7
60
64.4

56.11
59.69
63.16
67.79

58.91
62.67
66.32
71.18

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

5.2
4.9
4.6
4.3

1SMA60CAT3, G*
1SMA64CAT3
1SMA70CAT3
1SMA78CAT3

TKC
TMC
TPC
TTC

60
64
70
78

2.5
2.5
2.5
2.5

66.7
71.1
77.8
86.7

70.21
74.84
81.90
91.27

73.72
78.58
85.99
95.83

1.0
1.0
1.0
1.0

96.8
103
113
126

4.1
3.9
3.5
3.2

4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. VBR measured at pulse test current IT at an ambient temperature of 25C
6. Surge current waveform per Figure 2 and derate per Figure 3
* The G suffix indicates PbFree package available.

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96

1SMA10CAT3 Series
RATING AND TYPICAL CHARACTERISTIC CURVES




AA* &/ "#


"  -

    !
"#
 %&!'

(%  ')"  ,
& 1 

,

.

,

,
,
 * "#
 %+ ( 

1  m




(&#' !&#" . AA:


: m %&!'
&
+'+ 45 ,,&,



@


Figure 2. Pulse Waveform

 C  %&!'
&
+'+ 45 ,,&,


2




*   



& 1 
% + 
+'+ &
(
 %(  ( &/ " 
+&5
 - ' AA,





&/ !&#"
AA

2

Figure 1. Pulse Rating Curve

&/ "#
+ & )-'
&/ %  " 

A? * &/ % ?%





2


&* & 4   & "  

Figure 3. Pulse Derating Curve

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97



 & !
  
  #
4# 
    % 
This complete new line of 1.5 Watt Zener Diodes offers the
following advantages.

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Specification Features

Standard Zener Breakdown Voltage Range 3.3 V to 68 V


ESD Rating of Class 3 (>16 kV) per Human Body Model
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
Ideal Replacement for MELF Packages
PbFree Packages are Available

CATHODE

ANODE

SMA
CASE 403D
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant with readily

MARKING DIAGRAM

solderable leads
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 seconds


POLARITY: Cathode indicated by molded polarity notch or cathode
band
FLAMMABILITY RATING: UL 94 V0 @ 0.125 in

Rating

Symbol

Value

Unit

DC Power Dissipation @ TL = 75C,


Measured Zero Lead Length (Note 1.)
Derate above 75C
Thermal Resistance
JunctiontoLead

PD

1.5
20

Watts
mW/C

Operating and Storage


Temperature Range

8xxB
LL
Y
WW

MAXIMUM RATINGS

DC Power Dissipation @ TA = 25C


(Note 2.) Derate above 25C
Thermal Resistance
JunctiontoAmbient

8xxB
LLYWW

RqJL

50

C/W

PD

0.5
4.0

Watts
mW/C

RqJA

250

C/W

TJ, Tstg

65 to
+150

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

= Specific Device Code


= (See Table Next Page)
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
Device*

Package

Shipping

1SMA59xxBT3

SMA

5000/Tape & Reel

SMA
(PbFree)

5000/Tape & Reel

1SMA59xxBT3G

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 99 of this data sheet.

*The T3 suffix refers to a 13 inch reel.

1. 1 square copper pad, FR4 board


2. FR4 Board, using ON Semiconductor minimum recommended footprint

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 4

98

Publication Order Number:


1SMA5913BT3/D

1SMA5913BT3 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 1.5 V Max. @ IF = 200 mA for all types)
Symbol

Parameter

IF

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

VZ VR

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IZM

Maximum DC Zener Current

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mA for all types)
Zener Voltage (Note 8)
VZ (Volts)

Zener Impedance

Leakage Current

@ IZT

ZZT @ IZT

Device (Note 7)

Device
Marking

Min

Nom

Max

mA

mA

mA

Volts

mA(dc)

1SMA5913BT3
1SMA5914BT3
1SMA5915BT3
1SMA5916BT3

813B
814B
815B
816B

3.13
3.42
3.70
4.08

3.3
3.6
3.9
4.3

3.47
3.78
4.10
4.52

113.6
104.2
96.1
87.2

10
9.0
7.5
6.0

500
500
500
500

1.0
1.0
1.0
1.0

50
35.5
12.5
2.5

1.0
1.0
1.0
1.0

455
417
385
349

1SMA5917BT3
1SMA5918BT3
1SMA5919BT3
1SMA5920BT3

817B
818B
819B
820B

4.46
4.84
5.32
5.89

4.7
5.1
5.6
6.2

4.94
5.36
5.88
6.51

79.8
73.5
66.9
60.5

5.0
4.0
2.0
2.0

500
350
250
200

1.0
1.0
1.0
1.0

2.5
2.5
2.5
2.5

1.5
2.0
3.0
4.0

319
294
268
242

1SMA5921BT3
1SMA5922BT3
1SMA5923BT3
1SMA5924BT3, G*

821B
822B
823B
824B

6.46
7.12
7.79
8.64

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.56

55.1
50
45.7
41.2

2.5
3.0
3.5
4.0

200
400
400
500

1.0
0.5
0.5
0.5

2.5
2.5
2.5
2.5

5.2
6.0
6.5
7.0

221
200
183
165

1SMA5925BT3
1SMA5926BT3
1SMA5927BT3, G*
1SMA5928BT3

825B
826B
827B
828B

9.5
10.45
11.4
12.35

10
11
12
13

10.5
11.55
12.6
13.65

37.5
34.1
31.2
28.8

4.5
5.5
6.5
7.0

500
550
550
550

0.25
0.25
0.25
0.25

2.5
0.5
0.5
0.5

8.0
8.4
9.1
9.9

150
136
125
115

1SMA5929BT3, G*
1SMA5930BT3
1SMA5931BT3
1SMA5932BT3

829B
830B
831B
832B

14.25
15.2
17.1
19

15
16
18
20

15.75
16.8
18.9
21

25
23.4
20.8
18.7

9.0
10
12
14

600
600
650
650

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

11.4
12.2
13.7
15.2

100
94
83
75

1SMA5933BT3
1SMA5934BT3
1SMA5935BT3
1SMA5936BT3

833B
834B
835B
836B

20.9
22.8
25.65
28.5

22
24
27
30

23.1
25.2
28.35
31.5

17
15.6
13.9
12.5

17.5
19
23
26

650
700
700
750

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

16.7
18.2
20.6
22.8

68
63
56
50

1SMA5937BT3
1SMA5938BT3
1SMA5939BT3
1SMA5940BT3, G*

837B
838B
839B
840B

31.35
34.2
37.05
40.85

33
36
39
43

34.65
37.8
40.95
45.15

11.4
10.4
9.6
8.7

33
38
45
53

800
850
900
950

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

25.1
27.4
29.7
32.7

45
42
38
35

1SMA5941BT3
841B
44.65
47
49.35
8.0
67
1000
0.25
1SMA5942BT3
842B
48.45
51
53.55
7.3
70
1100
0.25
1SMA5943BT3, G*
843B
53.2
56
58.8
6.7
86
1300
0.25
1SMA5944BT3
844B
58.9
62
65.1
6.0
100
1500
0.25
1SMA5945BT3
845B
64.6
68
71.4
5.5
120
1700
0.25
7. Tolerance and Voltage Regulation Designation The type number listed indicates a tolerance of 5%.
8. VZ limits are to be guaranteed at thermal equilibrium.
* The G suffix indicates PbFree package available.

0.5
0.5
0.5
0.5
0.5

35.8
38.8
42.6
47.1
51.7

32
29
27
24
22

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99

ZZK @ IZK

IR @ VR

IZM

1SMA5913BT3 Series



,

7*7 "  &

+ * &D "  % +

 & %&


Rating and Typical Characteristic Curves (TA = 25C)

,
#
,
,2



&





3

*   & "  



,



Figure 4. Steady State Power Derating

!7 *   & " '' !: 

7* 7 "  &











!7* 7 !# &) !#




3

2


!7 0 7

2




.
.

Figure 6. VZ = 12 thru 68 Volts


2
!7* 7 !# &) !#






Figure 7. Zener Voltage 3.3 to 12 Volts


!7 0 7

77*+5&  +&(




!7 *   & " '' !: 



!7* 7 !# &) !#


Figure 5. VZ 3.3 thru 10 Volts



,


7@ 1  &



 &

 &



7 1 , 7@






!7* 7 !# &) !#


!7* 7 !# &) !#




Figure 9. Effect of Zener Voltage

Figure 8. Zener Voltage 14 to 68 Volts

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100

1SMA5913BT3 Series
Rating and Typical Characteristic Curves (TA = 25C)




&
" + 0
!7:



8 1 




4 &/+% !# &) !#


    !* D  &#


"#
 %&!' * 8 1 

A? * &/ % ?%

*& & &A'

&
" + 0
7  4&

,

,



,

Figure 10. Capacitance Curve

&/ !&#"
AA



: m %&!'
&
+'+ 45 ,,&,




,;  &/

(&#' !&#" . AA:



,  &/



*   

2


,  &/




@


2: m %&!'
&
+'+ 45 &
 ,
&+  2.,



"  -


2



& 1 
% + 
+'+ &
(
 %(  ( &/ " 
+&5
 - ' AA,

 m



Figure 11. Typical Pulse Rating Curve

AA* &/ "#




AA* &/ "#


"  -



,

* "#
 %+ ( 

1 2 m


,


 m

Figure 12. Pulse Waveform

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101

,
,
*   

,2

Figure 13. Pulse Waveform

,

 
  
$        

    


Unidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.

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PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 78 V, 400 W PEAK POWER

Specification Features

Working Peak Reverse Voltage Range 5.0 V to 78 V


Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V
Peak Power 400 W @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Response Time is Typically < 1 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
PbFree Packages are Available

CATHODE

SMA
CASE 403D
PLASTIC

MARKING DIAGRAM
xx
LLYWW

Mechanical Characteristics
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

xx

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


POLARITY: Cathode indicated by molded polarity notch or polarity
band
MOUNTING POSITION: Any

ANODE

LL
Y
WW

= Specific Device Code


= (See Table on Page 104)
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
Device
1SMAxxAT3
1SMAxxAT3G

Package

Shipping

SMA

5000/Tape & Reel

SMA
(PbFree)

5000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 104 of this data sheet.

*Please see 1SMA10CAT3 to 1SMA78CAT3 for


Bidirectional devices.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 6

102

Publication Order Number:


1SMA5.0AT3/D

1SMA5.0AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction to Lead

Symbol

Value

Unit

PPK

400

PD

1.5

RqJL

20
50

mW/C
C/W
W
mW/C
C/W

DC Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance from Junction to Ambient

PD
RqJA

0.5
4.0
250

Forward Surge Current (Note 4) @ TA = 25C

IFSM

40

TJ, Tstg

65 to +150

Operating and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted, VF = 3.5 V Max. @


IF = 30 A for all types) (Note 5)

IF

Symbol

VC VBR VRWM
IR VF
IT

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR

IPP

UniDirectional TVS

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive


duty cycle.

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103

Parameter

1SMA5.0AT3 Series

ELECTRICAL CHARACTERISTICS
Breakdown Voltage

VRWM
(Note 6)

IR @ VRWM

Volts

mA

Min

Nom

VBR (Volts) (Note 7)

VC @ IPP (Note 8)
@ IT

VC

IPP

Max

mA

Volts

Amps

Device

Device
Marking

1SMA5.0AT3
1SMA6.0AT3
1SMA6.5AT3
1SMA7.0AT3

QE
QG
QK
QM

5.0
6.0
6.5
7.0

400
400
250
250

6.4
6.67
7.22
7.78

6.7
7.02
7.6
8.19

7.0
7.37
7.98
8.6

10
10
10
10

9.2
10.3
11.2
12.0

43.5
38.8
35.7
33.3

1SMA7.5AT3
1SMA8.0AT3
1SMA8.5AT3
1SMA9.0AT3

QP
QR
QT
QV

7.5
8.0
8.5
9.0

50
25
5.0
2.5

8.33
8.89
9.44
10

8.77
9.36
9.92
10.55

9.21
9.83
10.4
11.1

1
1
1
1

12.9
13.6
14.4
15.4

31.0
29.4
27.8
26.0

1SMA10AT3
1SMA11AT3
1SMA12AT3
1SMA13AT3

QX
QZ
RE
RG

10
11
12
13

2.5
2.5
2.5
2.5

11.1
12.2
13.3
14.4

11.7
12.85
14.0
15.15

12.3
13.5
14.7
15.9

1
1
1
1

17.0
18.2
19.9
21.5

23.5
22.0
20.1
18.6

1SMA14AT3
1SMA15AT3
1SMA16AT3, G*
1SMA17AT3

RK
RM
RP
RR

14
15
16
17

2.5
2.5
2.5
2.5

15.6
16.7
17.8
18.9

16.4
17.6
18.75
19.9

17.2
18.5
19.7
20.9

1
1
1
1

23.2
24.4
26.0
27.6

17.2
16.4
15.4
14.5

1SMA18AT3, G*
1SMA20AT3
1SMA22AT3
1SMA24AT3

RT
RV
RX
RZ

18
20
22
24

2.5
2.5
2.5
2.5

20
22.2
24.4
26.7

21.05
23.35
25.65
28.1

22.1
24.5
26.9
29.5

1
1
1
1

29.2
32.4
35.5
38.9

13.7
12.3
11.3
10.3

1SMA26AT3
1SMA28AT3
1SMA30AT3
1SMA33AT3

SE
SG
SK
SM

26
28
30
33

2.5
2.5
2.5
2.5

28.9
31.1
33.3
36.7

30.4
32.75
35.05
38.65

31.9
34.4
36.8
40.6

1
1
1
1

42.1
45.4
48.4
53.3

9.5
8.8
8.3
7.5

1SMA36AT3
1SMA40AT3
1SMA43AT3
1SMA45AT3

SP
SR
ST
SV

36
40
43
45

2.5
2.5
2.5
2.5

40
44.4
47.8
50

42.1
46.75
50.3
52.65

44.2
49.1
52.8
55.3

1
1
1
1

58.1
64.5
69.4
72.2

6.9
6.2
5.8
5.5

1SMA48AT3
1SMA51AT3
1SMA54AT3
1SMA58AT3

SX
SZ
TE
TG

48
51
54
58

2.5
2.5
2.5
2.5

53.3
56.7
60
64.4

56.1
59.7
63.15
67.8

58.9
62.7
66.3
71.5

1
1
1
1

77.4
82.4
87.1
93.6

5.2
4.9
4.6
4.3

1SMA60AT3
1SMA64AT3
1SMA70AT3
1SMA75AT3
1SMA78AT3

TK
TM
TP
TR
TS

60
64
70
75
78

2.5
2.5
2.5
2.5
2.5

66.7
71.1
77.8
83.3
86.7

70.2
74.85
81.9
87.7
91.25

73.7
78.6
86.0
92.1
95.8

1
1
1
1
1

96.8
103
113
121
126

4.1
3.9
3.5
3.3
3.2

6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
7. VBR measured at pulse test current IT at an ambient temperature of 25C
8. Surge current waveform per Figure 2 and derate per Figure 3
* The G suffix indicates PbFree package available.

http://onsemi.com
104

1SMA5.0AT3 Series
RATING AND TYPICAL CHARACTERISTIC CURVES

    !
"#
 %&!'

(%  ')"  ,
& 1 



AA* &/ "#


"  -

A? * &/ % ?%



,

.

,

,
,
 * "#
 %+ ( 


&/ !&#"
AA

2


(&#' !&#" . AA:



: m %&!'
&
+'+ 45 ,,&,






@


Figure 2. Pulse Waveform


&/ "#
+ & )-'
&/ %  " 

*   

Figure 1. Pulse Rating Curve

*
 C  %&!'
&
+'+ 45 ,,&,
*& & &A'


2



&
" + &
7  4&

*



2


&* & 4   & "  





Figure 3. Pulse Derating Curve

+ * &D "  % +

 & %&






!4 * 4 &/+% !# &) !#




@ TL = 75C
PD = 1.5 W


@ TA = 25C
PD = 0.5 W






 

Figure 4. Typical Junction Capacitance

8 1 
E 1  (F
!  1  !A.A

&
" + &

&+.''
!# &)* !%






& 1 
% + 
+'+ &
(
 %(  ( &/ " 
+&5
 - ' AA,

 m



3
*   & "  



Figure 5. Steady State Power Derating

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105



!
  
       

    


Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.

http://onsemi.com

PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
1078 V, 600 W PEAK POWER

Features

Working Peak Reverse Voltage Range 10 V to 78 V


Standard Zener Breakdown Voltage Range 11.7 V to 91.3 V
Peak Power 600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
PbFree Package is Available

SMB
CASE 403A
PLASTIC

MARKING DIAGRAM

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

YWW
xxC

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any

Y
WW
xxC

= Year
= Work Week
= Specific Device Code
= (See Table Next Page)

ORDERING INFORMATION
Device*
1SMBxxCAT3
1SMBxxCAT3G

Package

Shipping

SMB

2500/Tape & Reel

SMB
(PbFree)

2500/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 108 of this data sheet.

*The T3 suffix refers to a 13 inch reel.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 5

106

Publication Order Number:


1SMB10CAT3/D

1SMB10CAT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2.)
Derate Above 75C
Thermal Resistance from JunctiontoLead
DC Power Dissipation (Note 3.) @ TA = 25C
Derate Above 25C
Thermal Resistance from JunctiontoAmbient

Symbol

Value

Unit

PPK

600

PD

3.0

RqJL

40
25

mW/C
C/W

RqJA

0.55
4.4
226

W
mW/C
C/W

TJ, Tstg

65 to +150

PD

Operating and Storage


Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT

IPP

IT
VC VBR VRWM IR
IR VRWM VBR VC
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT

IPP

Test Current

BiDirectional TVS

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107

1SMB10CAT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device

Device
Marking

Breakdown Voltage

VRWM
(Note 9)

IR @ VRWM

Volts

mA

Min

Nom

VBR (Note 10) Volts

VC @ IPP (Note 11)


@ IT

VC

IPP

Max

mA

Volts

Amps

1SMB10CAT3
1SMB11CAT3
1SMB12CAT3
1SMB13CAT3

KXC
KZC
LEC
LGC

10
11
12
13

5.0
5.0
5.0
5.0

11.1
12.2
13.3
14.4

11.69
12.84
14.00
15.16

12.27
13.5
14.7
15.9

1.0
1.0
1.0
1.0

17.0
18.2
19.9
21.5

35.3
33.0
30.2
27.9

1SMB14CAT3
1SMB15CAT3
1SMB16CAT3
1SMB17CAT3

LKC
LMC
LPC
LRC

14
15
16
17

5.0
5.0
5.0
5.0

15.6
16.7
17.8
18.9

16.42
17.58
18.74
19.90

17.2
18.5
19.7
20.9

1.0
1.0
1.0
1.0

23.2
24.4
26.0
27.6

25.8
24.0
23.1
21.7

1SMB18CAT3
1SMB20CAT3
1SMB22CAT3
1SMB24CAT3

LTC
LVC
LXC
LZC

18
20
22
24

5.0
5.0
5.0
5.0

20.0
22.2
24.4
26.7

21.06
23.37
25.69
28.11

22.1
24.5
27.0
29.5

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

20.5
18.5
16.9
15.4

1SMB26CAT3
1SMB28CAT3
1SMB30CAT3, G*
1SMB33CAT3

MEC
MGC
MKC
MMC

26
28
30
33

5.0
5.0
5.0
5.0

28.9
31.1
33.3
36.7

30.42
32.74
35.06
38.63

31.9
34.4
36.8
40.6

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

14.2
13.2
12.4
11.3

1SMB36CAT3
1SMB40CAT3
1SMB43CAT3
1SMB45CAT3

MPC
MRC
MTC
MVC

36
40
43
45

5.0
5.0
5.0
5.0

40.0
44.4
47.8
50.0

42.11
46.74
50.32
52.63

44.2
49.1
52.8
55.3

1.0
1.0
1.0
1.0

58.1
64.5
69.4
72.2

10.3
9.3
8.6
8.3

1SMB48CAT3
1SMB51CAT3
1SMB54CAT3
1SMB58CAT3

MXC
MZC
NEC
NGC

48
51
54
58

5.0
5.0
5.0
5.0

53.3
56.7
60.0
64.4

56.11
59.69
63.16
67.79

58.9
62.7
66.32
71.18

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

7.7
7.3
6.9
6.4

1SMB60CAT3
1SMB64CAT3
1SMB70CAT3
1SMB75CAT3

NKC
NMC
NPC
NRC

60
64
70
75

5.0
5.0
5.0
5.0

66.7
71.1
77.8
83.3

70.21
74.84
81.90
91.65

73.72
78.58
85.99
92.07

1.0
1.0
1.0
1.0

96.8
103
113
121

6.2
5.8
5.3
4.9

1SMB78CAT3

NTC

78

5.0

86.7

91.26

95.83

1.0

126

4.7

9. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
10. VBR measured at pulse test current IT at an ambient temperature of 25C.
11. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group.
* The G suffix indicates PbFree package available.

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108

1SMB10CAT3 Series

    !
"#
 %&!'

(%  ')"  

"#
 %+ (   
+'+
&
(&  %(  ( &/
"  +&5
 - '  ,

6  m




&/ !&#" . 

!&#"-

PPK, PEAK POWER (kW)



(&#' !&#" .



,

, m

 m

 m

 m

 

 

 * "#
 %+ (

*   

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform

&/ "#
+ & )-'
&/ %  "  0 & 1 




TYPICAL PROTECTION CIRCUIT



7 


2
! 



#&+

!#









3







&* & 4   & "  

Figure 3. Pulse Derating Curve

APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

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109

1SMB10CAT3 Series

Vin (TRANSIENT)

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 4.

Figure 5.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 ms

0.02
10 ms
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 6. Typical Derating Factor for Duty Cycle

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

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110

!& !
  
Preferred Device

 # 4# 


    % 
This complete new line of 3 Watt Zener diodes offers the following
advantages.
Specification Features

Zener Voltage Range 3.3 V to 200 V


ESD Rating of Class 3 (>16 kV) per Human Body Model
Flat Handling Surface for Accurate Placement
Package Design for Top Side or Bottom Circuit Board Mounting
PbFree Packages are Available

Mechanical Characteristics
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are

http://onsemi.com

PLASTIC SURFACE MOUNT


ZENER VOLTAGE
REGULATOR DIODES
3.3200 V, 3 W DC POWER

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

Cathode

Anode

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

SMB
CASE 403A
PLASTIC

MAXIMUM RATINGS
Rating
Maximum Steady State Power
Dissipation @ TL = 75C
Measured at Zero Lead Length
Derate Above 75C
Thermal Resistance from JunctiontoLead
Maximum Steady State Power Dissipation
@ TA = 25C (Note )
Derate Above 25C
Thermal Resistance from JunctiontoAmbient
Operating and Storage
Temperature Range

Symbol

Value

Unit

PD

3.0

RqJL

40
25

mW/C
C/W

PD

550

mW

RqJA

4.4
226

mW/C
C/W

65
to
+150

TJ, Tstg

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR4 board, within 1 to device, using recommended footprint.

MARKING DIAGRAM
YWW
9xxB
Y
WW
9xxB

= Year
= Work Week
= Specific Device Code
= (See Table page 113)

ORDERING INFORMATION
Device

Package

Shipping

1SMB59xxBT3

SMB

2500/Tape & Reel

SMB
(PbFree)

2500/Tape & Reel

1SMB59xxBT3G

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 4

111

Publication Order Number:


1SMB5913BT3/D

1SMB5913BT3 Series
ELECTRICAL CHARACTERISTICS
(TL = 30C unless otherwise noted,
VF = 1.5 V Max. @ IF = 200 mA(dc) for all types)
Symbol

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IZM

Maximum DC Zener Current

IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

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112

1SMB5913BT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
(TL = 30C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mA(dc) for all types)
Zener Voltage (Note 3)

Leakage Current

@ IZT

ZZT @ IZT

Max

mA

mA

mA

Volts

mA(dc)

3.3
3.6
3.9
4.3

3.47
3.78
4.10
4.52

113.6
104.2
96.1
87.2

10
9
7.5
6

500
500
500
500

1
1
1
1

100
75
25
5

1
1
1
1

454
416
384
348

4.46
4.84
5.32
5.89

4.7
5.1
5.6
6.2

4.94
5.36
5.88
6.51

79.8
73.5
66.9
60.5

5
4
2
2

500
350
250
200

1
1
1
1

5
5
5
5

1.5
2
3
4

319
294
267
241

921B
922B
923B
924B

6.46
7.12
7.79
8.64

6.8
7.5
8.2
9.1

7.14
7.88
8.61
9.56

55.1
50
45.7
41.2

2.5
3
3.5
4

200
400
400
500

1
0.5
0.5
0.5

5
5
5
5

5.2
6
6.5
7

220
200
182
164

1SMB5925BT3
1SMB5926BT3
1SMB5927BT3, G*
1SMB5928BT3

925B
926B
927B
928B

9.5
10.45
11.4
12.35

10
11
12
13

10.5
11.55
12.6
13.65

37.5
34.1
31.2
28.8

4.5
5.5
6.5
7

500
550
550
550

0.25
0.25
0.25
0.25

5
1
1
1

8
8.4
9.1
9.9

150
136
125
115

1SMB5929BT3
1SMB5930BT3
1SMB5931BT3
1SMB5932BT3

929B
930B
931B
932B

14.25
15.2
17.1
19

15
16
18
20

15.75
16.8
18.9
21

25
23.4
20.8
18.7

9
10
12
14

600
600
650
650

0.25
0.25
0.25
0.25

1
1
1
1

11.4
12.2
13.7
15.2

100
93
83
75

1SMB5933BT3
1SMB5934BT3
1SMB5935BT3
1SMB5936BT3, G*

933B
934B
935B
936B

20.9
22.8
25.65
28.5

22
24
27
30

23.1
25.2
28.35
31.5

17
15.6
13.9
12.5

17.5
19
23
28

650
700
700
750

0.25
0.25
0.25
0.25

1
1
1
1

16.7
18.2
20.6
22.8

68
62
55
50

1SMB5937BT3, G*
1SMB5938BT3
1SMB5939BT3
1SMB5940BT3

937B
938B
939B
940B

31.35
34.2
37.05
40.85

33
36
39
43

34.65
37.8
40.95
45.15

11.4
10.4
9.6
8.7

33
38
45
53

800
850
900
950

0.25
0.25
0.25
0.25

1
1
1
1

25.1
27.4
29.7
32.7

45
41
38
34

1SMB5941BT3
1SMB5942BT3
1SMB5943BT3, G*
1SMB5944BT3

941B
942B
943B
944B

44.65
48.45
53.2
58.9

47
51
56
62

49.35
53.55
58.8
65.1

8
7.3
6.7
6

67
70
86
100

1000
1100
1300
1500

0.25
0.25
0.25
0.25

1
1
1
1

35.8
38.8
42.6
47.1

31
29
26
24

1SMB5945BT3
1SMB5946BT3
1SMB5947BT3
1SMB5948BT3

945B
946B
947B
948B

64.6
71.25
77.9
86.45

68
75
82
91

71.4
78.75
86.1
95.55

5.5
5
4.6
4.1

120
140
160
200

1700
2000
2500
3000

0.25
0.25
0.25
0.25

1
1
1
1

51.7
56
62.2
69.2

22
20
18
16

1SMB5949BT3
1SMB5950BT3
1SMB5951BT3, G*
1SMB5952BT3

949B
950B
951B
952B

95
104.5
114
123.5

100
110
120
130

105
115.5
126
136.5

3.7
3.4
3.1
2.9

250
300
380
450

3100
4000
4500
5000

0.25
0.25
0.25
0.25

1
1
1
1

76
83.6
91.2
98.8

15
13
12
11

1SMB5953BT3, G*
1SMB5954BT3
1SMB5955BT3
1SMB5956BT3

953B
954B
955B
956B

142.5
152
171
190

150
160
180
200

157.5
168
189
210

2.5
2.3
2.1
1.9

600
700
900
1200

6000
6500
7000
8000

0.25
0.25
0.25
0.25

1
1
1
1

114
121.6
136.8
152

10
9
8
7

Device
(Note 2)

VZ (Volts)

Zener Impedance (Note 4)

Device
Marking

Min

Nom

1SMB5913BT3
1SMB5914BT3
1SMB5915BT3
1SMB5916BT3

913B
914B
915B
916B

3.13
3.42
3.70
4.08

1SMB5917BT3
1SMB5918BT3, G*
1SMB5919BT3, G*
1SMB5920BT3, G*

917B
918B
919B
920B

1SMB5921BT3
1SMB5922BT3
1SMB5923BT3, G*
1SMB5924BT3

ZZK @ IZK

IR @ VR

IZM

2. TOLERANCE AND TYPE NUMBER DESIGNATION The type numbers listed indicate a tolerance of 5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal Zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25C.
4. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
* The G suffix indicates PbFree package available.

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113

1SMB5913BT3 Series
/
*
/ &/
" ) % %&


* &D " 


% +

 & %&

+




#






&






3

*   & "  



 &)"#&
    !
%&!'
8616 
  &# "#










,



, , ,


2

!7 0 7





.
.


2
!7* 7 !# &) !#






3











IZT, REVERSE CURRENT (mA)

IZT, REVERSE CURRENT (mA)









,
,
,





3
!7* 7 !# &) !#






3

!7* 7 !# &) !#




Figure 4. Zener Voltage 14 To 200 Volts



!7 0 7









Figure 3. Zener Voltage To 12 Volts

,

 

   
%* "#
 %+ ( 

Figure 2. Maximum Surge Power

!7 *   & " '' !:

!7 *   & " '' !:

Figure 1. Steady State Power Derating








,
,
,
,









3
2
!7* 7 !# &) !#


Figure 6. VZ = 12 thru 82 Volts

Figure 5. VZ = 3.3 thru 10 Volts

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114

;



1SMB5913BT3 Series


?

7@ 1 &
7*+5& 
+&(

7

7*+5& 
+&(

7


3



&


3




&




7 1 , 7@





!7* 7 !# &) !#


3

8 1 
7 1 , 7@




!7 1!



;!



!





!

!


,



Figure 7. Effect of Zener Voltage






7* 7 
"  &



,2!


Figure 8. Effect of Zener Current

Rating and Typical Characteristic Curves (TA = 25C)






&
" + 0
!7:



8 1 




4 &/+% !# &) !#


    !* D  &#


"#
 %&!' * 8 1 

A? * &/ % ?%

*& & &A'

&
" + 0
7  4&

,

,



,

Figure 9. Capacitance Curve

&/ !&#"
AA



: m %&!'
&
+'+ 45 ,,&,




,;  &/

(&#' !&#" . AA:



,  &/



*   

2


,  &/




@


2: m %&!'
&
+'+ 45 &
 ,
&+  2.,



"  -


2



& 1 
% + 
+'+ &
(
 %(  ( &/ " 
+&5
 - ' AA,

 m



Figure 10. Typical Pulse Rating Curve

AA* &/ "#




AA* &/ "#


"  -



,

* "#
 %+ ( 

1 2 m


,


 m

Figure 11. Pulse Waveform

http://onsemi.com
115

,
,
*   

,2

Figure 12. Pulse Waveform

,

!
  
        

  
 
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.

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PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V 170 V,
600 W PEAK POWER

Specification Features

Working Peak Reverse Voltage Range 5.0 V to 170 V


Standard Zener Breakdown Voltage Range 6.7 V to 199 V
Peak Power 600 W @ 1.0 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1.0 ns
PbFree Packages are Available

Cathode

Anode

SMB
CASE 403A
PLASTIC

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

MARKING DIAGRAM
YWW
xx

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

Y
WW
xx

= Year
= Work Week
= Specific Device Code
= (See Table Page 118)

*Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.

ORDERING INFORMATION
Device
1SMBxxxAT3
1SMBxxxAT3G

Package

Shipping

SMB

2500/Tape & Reel

SMB
(PbFree)

2500/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 118 of this data sheet.

Semiconductor Components Industries, LLC, 2004

May, 2004 Rev. 7

116

Publication Order Number:


1SMB5.0AT3/D

1SMB5.0AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from JunctiontoLead

Symbol

Value

Unit

PPK

600

PD

3.0

RqJL

40
25

mW/C
C/W
W
mW/C
C/W

DC Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance from JunctiontoAmbient

PD
RqJA

0.55
4.4
226

Forward Surge Current (Note 4) @ TA = 25C

IFSM

100

TJ, Tstg

65 to +150

Operating and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,


nonrepetitive duty cycle.

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117

1SMB5.0AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device

Device
Marking

Breakdown Voltage

VRWM
(Note 6)

IR @ VRWM

Volts

mA

Min

Nom

VBR (Note 7) Volts

VC @ IPP (Note 8)
@ IT

VC

IPP

Max

mA

Volts

Amps

1SMB5.0AT3
1SMB6.0AT3, G*
1SMB6.5AT3
1SMB7.0AT3

KE
KG
KK
KM

5.0
6.0
6.5
7.0

800
800
500
500

6.40
6.67
7.22
7.78

6.7
7.02
7.6
8.19

7.0
7.37
7.98
8.6

10
10
10
10

9.2
10.3
11.2
12.0

65.2
58.3
53.6
50.0

1SMB7.5AT3
1SMB8.0AT3
1SMB8.5AT3
1SMB9.0AT3

KP
KR
KT
KV

7.5
8.0
8.5
9.0

100
50
10
5.0

8.33
8.89
9.44
10.0

8.77
9.36
9.92
10.55

9.21
9.83
10.4
11.1

1.0
1.0
1.0
1.0

12.9
13.6
14.4
15.4

46.5
44.1
41.7
39.0

1SMB10AT3
1SMB11AT3
1SMB12AT3
1SMB13AT3

KX
KZ
LE
LG

10
11
12
13

5.0
5.0
5.0
5.0

11.1
12.2
13.3
14.4

11.7
12.85
14
15.15

12.3
13.5
14.7
15.9

1.0
1.0
1.0
1.0

17.0
18.2
19.9
21.5

35.3
33.0
30.2
27.9

1SMB14AT3
1SMB15AT3, G*
1SMB16AT3
1SMB17AT3

LK
LM
LP
LR

14
15
16
17

5.0
5.0
5.0
5.0

15.6
16.7
17.8
18.9

16.4
17.6
18.75
19.9

17.2
18.5
19.7
20.9

1.0
1.0
1.0
1.0

23.2
24.4
26.0
27.6

25.8
24.0
23.1
21.7

1SMB18AT3
1SMB20AT3
1SMB22AT3
1SMB24AT3, G*

LT
LV
LX
LZ

18
20
22
24

5.0
5.0
5.0
5.0

20.0
22.2
24.4
26.7

21.05
23.35
25.65
28.1

22.1
24.5
26.9
29.5

1.0
1.0
1.0
1.0

29.2
32.4
35.5
38.9

20.5
18.5
16.9
15.4

1SMB26AT3
1SMB28AT3, G*
1SMB30AT3, G*
1SMB33AT3, G*

ME
MG
MK
MM

26
28
30
33

5.0
5.0
5.0
5.0

28.9
31.1
33.3
36.7

30.4
32.75
35.05
38.65

31.9
34.4
36.8
40.6

1.0
1.0
1.0
1.0

42.1
45.4
48.4
53.3

14.2
13.2
12.4
11.3

1SMB36AT3
1SMB40AT3
1SMB43AT3
1SMB45AT3

MP
MR
MT
MV

36
40
43
45

5.0
5.0
5.0
5.0

40.0
44.4
47.8
50.0

42.1
46.75
50.3
52.65

44.2
49.1
52.8
55.3

1.0
1.0
1.0
1.0

58.1
64.5
69.4
72.7

10.3
9.3
8.6
8.3

1SMB48AT3
1SMB51AT3
1SMB54AT3
1SMB58AT3

MX
MZ
NE
NG

48
51
54
58

5.0
5.0
5.0
5.0

53.3
56.7
60.0
64.4

56.1
59.7
63.15
67.8

58.9
62.7
66.3
71.2

1.0
1.0
1.0
1.0

77.4
82.4
87.1
93.6

7.7
7.3
6.9
6.4

1SMB60AT3
1SMB64AT3
1SMB70AT3
1SMB75AT3

NK
NM
NP
NR

60
64
70
75

5.0
5.0
5.0
5.0

66.7
71.1
77.8
83.3

70.2
74.85
81.9
87.7

73.7
78.6
86
92.1

1.0
1.0
1.0
1.0

96.8
103
113
121

6.2
5.8
5.3
4.9

1SMB85AT3
1SMB90AT3
1SMB100AT3

NV
NX
NZ

85
90
100

55.0
5.0
5.0

94.4
100
111

99.2
105.5
117

104
111
123

1.0
1.0
1.0

137
146
162

4.4
4.1
3.7

1SMB110AT3
1SMB120AT3
1SMB130AT3
1SMB150AT3

PE
PG
PK
PM

110
120
130
150

5.0
5.0
5.0
5.0

122
133
144
167

128.5
140
151.5
176

135
147
159
185

1.0
1.0
1.0
1.0

177
193
209
243

3.4
3.1
2.9
2.5

1SMB160AT3
1SMB170AT3

PP
PR

160
170

5.0
5.0

178
189

187.5
199

197
209

1.0
1.0

259
275

2.3
2.2

6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data 600 W at the beginning of this group.
* The G suffix indicates PbFree package available.

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118

1SMB5.0AT3 Series

    !
"#
 %&!'

(%  ')"  

"#
 %+ (   
+'+ &

(&  %(  ( &/


"  +&5
 - '  ,

6  m




&/ !&#" . 

!&#"-

PPK, PEAK POWER (kW)



(&#' !&#" .




,

, m

 m

 m

 m

 

 

tP, PULSE WIDTH

t, TIME (ms)

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform




10,000
C, CAPACITANCE (pF)

&/ "#
+ & )-'
&/ %  "  0 & 1 




2









3







MEASURED @
ZERO BIAS
1000
MEASURED @ VRWM
100

10
0.1

10

100

1000

TA, AMBIENT TEMPERATURE (C)

VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 4. Pulse Derating Curve

Figure 5. Capacitance versus Breakdown


Voltage

Zin

LOAD

Vin

VL

Figure 3. Typical Protection Circuit

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119

1SMB5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.

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120

1SMB5.0AT3 Series

Vin (TRANSIENT)

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 6.

Figure 7.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 ms

0.02
10 ms
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 8. Typical Derating Factor for Duty Cycle

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

http://onsemi.com
121


  
        

    


Unidirectional*
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMC series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:

Working Peak Reverse Voltage Range 5.0 V to 78 V


Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V
Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
UL 497B for Isolated Loop Circuit Protection
Maximum Temperature Coefficient Specified
Response Time is Typically < 1 ns

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PLASTIC SURFACE MOUNT


ZENER TRANSIENT
VOLTAGE SUPPRESSORS
5.078 VOLTS
1500 WATT PEAK POWER

Cathode

Anode

SMC
CASE 403
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

MARKING DIAGRAM

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

YWW
Gxx

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by molded polarity notch
MOUNTING POSITION: Any
MAXIMUM RATINGS

Y
WW
Gxx

= Year
= Work Week
= Specific Device Code
= (See Table on Page

124)

Please See the Table on the Following Page

ORDERING INFORMATION
Device {
1SMCxxxAT3

Package

Shipping

SMC

2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor


Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

*Bidirectional devices will not be available in this


series.
The T3 suffix refers to a 13 inch reel.

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 3

122

Publication Order Number:


1SMC5.0AT3/D

1SMC5.0AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction to Lead

Symbol

Value

Unit

PPK

1500

PD

4.0

RqJL

54.6
18.3

mW/C
C/W
W
mW/C
C/W
A

DC Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance from Junction to Ambient

PD
RqJA

0.75
6.1
165

Forward Surge Current (Note 4) @ TA = 25C

IFSM

200

Operating and Storage Temperature Range


TJ, Tstg
65 to +150
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max @ IF = 100 A) (Note 5)


Symbol

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR

IF

Parameter

IPP

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

IPP

VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms
nonrepetitive duty cycle

UniDirectional TVS

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123

1SMC5.0AT3 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Device

Device
Marking

Breakdown Voltage

VC @ IPP (Note 8)

VRWM
(Note 6)

IR @ VRWM

@ IT

VC

IPP

Volts

Min

Nom

Max

mA

Volts

Amps

VBR Volts (Note 7)

1SMC5.0AT3
1SMC6.0AT3
1SMC6.5AT3
1SMC7.0AT3

GDE
GDG
GDK
GDM

5.0
6.0
6.5
7.0

1000
1000
500
200

6.4
6.67
7.22
7.78

6.7
7.02
7.6
8.19

7.0
7.37
7.98
8.6

10
10
10
10

9.2
10.3
11.2
12

163
145.6
133.9
125

1SMC7.5AT3
1SMC8.0AT3
1SMC8.5AT3
1SMC9.0AT3

GDP
GDR
GDT
GDV

7.5
8.0
8.5
9.0

100
50
25
10

8.33
8.89
9.44
10

8.77
9.36
9.92
10.55

9.21
9.83
10.4
11.1

1
1
1
1

12.9
13.6
14.4
15.4

116.3
110.3
104.2
97.4

1SMC10AT3
1SMC11AT3
1SMC12AT3
1SMC13AT3

GDX
GDZ
GEE
GEG

10
11
12
13

5
5
5
5

11.1
12.2
13.3
14.4

11.7
12.85
14
15.15

12.3
13.5
14.7
15.9

1
1
1
1

17
18.2
19.9
21.5

88.2
82.4
75.3
69.7

1SMC14AT3
1SMC15AT3
1SMC16AT3
1SMC17AT3

GEK
GEM
GEP
GER

14
15
16
17

5
5
5
5

15.6
16.7
17.8
18.9

16.4
17.6
18.75
19.9

17.2
18.5
19.7
20.9

1
1
1
1

23.2
24.4
26
27.6

64.7
61.5
57.7
53.3

1SMC18AT3
1SMC20AT3
1SMC22AT3
1SMC24AT3

GET
GEV
GEX
GEZ

18
20
22
24

5
5
5
5

20
22.2
24.4
26.7

21.05
23.35
25.65
28.1

22.1
24.5
26.9
29.5

1
1
1
1

29.2
32.4
35.5
38.9

51.4
46.3
42.2
38.6

1SMC26AT3
1SMC28AT3
1SMC30AT3
1SMC33AT3

GFE
GFG
GFK
GFM

26
28
30
33

5
5
5
5

28.9
31.1
33.3
36.7

30.4
32.75
35.05
38.65

31.9
34.4
36.8
40.6

1
1
1
1

42.1
45.4
48.4
53.3

35.6
33
31
28.1

1SMC36AT3
1SMC40AT3
1SMC43AT3
1SMC45AT3

GFP
GFR
GFT
GFV

36
40
43
45

5
5
5
5

40
44.4
47.8
50

42.1
46.75
50.3
52.65

44.2
49.1
52.8
55.3

1
1
1
1

58.1
64.5
69.4
72.2

25.8
32.2
21.6
20.6

1SMC48AT3
1SMC51AT3
1SMC54AT3
1SMC58AT3

GFX
GFZ
GGE
GGG

48
51
54
58

5
5
5
5

53.3
56.7
60
64.4

56.1
59.7
63.15
67.8

58.9
62.7
66.3
71.2

1
1
1
1

77.4
82.4
87.1
93.6

19.4
18.2
17.2
16

1SMC60AT3
GGK
60
5
66.7
70.2
73.7
1
96.8
15.5
1SMC64AT3
GGM
64
5
71.1
74.85
78.6
1
103
14.6
1SMC70AT3
GGP
70
5
77.8
81.9
86
1
113
13.3
1SMC75AT3
GGR
75
5
83.3
87.7
92.1
1
121
12.4
1SMC78AT3
GGT
78
5
86.7
91.25
95.8
1
126
11.4
6. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 1500 Watt at the beginning of this group.

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124

1SMC5.0AT3 Series

    !
"#
 %&!'

(%  ')"  



"#
 %+ (   
+'+
&
(&  %(  ( &/
"  +&5
 '  ,

6  


&/ !&#" . 

!&#"-

Ppk, PEAK POWER (kW)



(&#' !&#" .





, 

 

 

 

 

 

 * "#
 %+ (

*   

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform





IT, TEST CURRENT (AMPS)

&/ "#
+ & )-'
&/ %  "  0 & 1 





2









3









!4 6 616,26 66!


6!
6!
6!
36!

#616
 6166




6!



26!






,

, ,3 







&* & 4   & "  

!4 * 
& &"
 &
  !4 &4! !4   !#


Figure 3. Pulse Derating Curve

Figure 4. Dynamic Impedance

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-Withstand
test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

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125

1SMC5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMC series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

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126

1SMC5.0AT3 Series
TYPICAL PROTECTION CIRCUIT
Zin

LOAD

Vin

Vin (TRANSIENT)

VL

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 5.

Figure 6.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 s

0.02
10 s
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 7. Typical Derating Factor for Duty Cycle

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127

!5    
        
 % 6 
% 
The SMA series is supplied in ON Semiconductors exclusive,
cost-effective, highly reliable SURMETIC package and is ideally
suited for use in communication systems, automotive, numerical
controls, process controls, medical equipment, business machines,
power supplies and many other industrial/consumer applications.
This new line of 1.5 watt Zener diodes offers the following
advantages:
Specification Features:

Standard Zener Breakdown Voltage 15 V to 150 V


Peak Power 600 Watts @ 100 s
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Response Time is Typically < 1.0 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package

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PLASTIC SURFACE MOUNT


ZENER VOLTAGE
REGULATORS
600 WATTS PEAK POWER

CATHODE

Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are

ANODE

SMA
CASE 403D
PLASTIC

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


POLARITY: Cathode indicated by molded polarity notch or polarity

MARKING DIAGRAM

band
MOUNTING POSITION: Any

xx
LLYWW

MAXIMUM RATINGS
Please See the Table on the Following Page

xx
LL
Y
WW

= Specific Device Code


= (See Table on Page 129)
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
Device *

Package

Shipping

BZG03C15

SMA

5000/Tape & Reel

BZG03C150

SMA

5000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

January, 2004 Rev. 3

128

Publication Order Number:


BZG03C15/D

BZG03C15 Series
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

PZSM

600

Peak Power Dissipation (Note 9) @ TL = 25C, tP = 100 ms


DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 10)
Derate Above 75C
Thermal Resistance from Junction to Lead

PD

1.5

RqJL

20
50

mW/C
C/W

Forward Surge Current (Note 11) @ TA = 25C

IFSM

40

TJ, Tstg

65 to +150

Operating and Storage Temperature Range

9. 100 ms, nonrepetitive square pulse


10. 1 square copper pad, FR4 board
11. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum

SYMBOLS DEFINITIONS

Symbol

IF

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

VC VBR VRWM

IR VF
IT

IR

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM

VBR

IPP

Parameter

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max. @ IF = 0.5 A for all types)

Device

Device
Marking

Breakdown Voltage

VRWM
(Note 12)

IR @ VRWM

Volts

mA

Min

Nom

VBR (V) (Note 13)

Zzt @ IT
@ IT

Typ

Max

Max

mA

BZG03C15

G15

11

13.8

15.0

15.6

50

5.0

10.0

BZG03C150

G150

110

138

150

156

130

300

12. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
13. VBR measured at pulse test current IT at an ambient temperature of 25C

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129

BZG03C15 Series
RATING AND TYPICAL CHARACTERISTIC CURVES

*
    !
"#
 %&!'

(%  ')"  ,
& 1 



*& & &A'

A? * &/ % ?%



,

.

,

,
,
 * "#
 %+ ( 

&
" + &
7  4&

*

&
" + &

&+.''
!# &)* !%







Figure 8. Pulse Rating Curve

+ * &D "  % +

 & %&


&/ "#
+ & )-'
&/ %  " 

 C  %&!'
&
+'+ 45 ,,&,

2







2


&* & 4   & "  





!4 * 4 &/+% !# &) !#


 

Figure 10. Typical Junction Capacitance




8 1 
E 1  (F
!  1  !A.A








@ TL = 75C
PD = 1.5 W


@ TA = 25C
PD = 0.5 W








3
*   & "  



Figure 11. Steady State Power Derating

Figure 9. Pulse Derating Curve

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130



!7$+$/
   
    % 
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

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Specification Features

3
Cathode

225 mW Rating on FR4 or FR5 Board


Zener Breakdown Voltage Range 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 X 20 ms)
PbFree Package is Available

1
Anode

SOT23
CASE 318
STYLE 8

1
2

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

MARKING DIAGRAM

260C for 10 Seconds

xxxM

POLARITY: Cathode indicated by polarity band


FLAMMABILITY RATING: UL 94 V0
xxx = Specific Device Code
M = Date Code

MAXIMUM RATINGS
Rating

Symbol

Max

Unit

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C

Ppk

225

Watts

Total Power Dissipation on FR5 Board,


(Note 2) @ TA = 25C
Derated above 25C

PD

Thermal Resistance,
JunctiontoAmbient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25C
Derated above 25C

RqJA

225
1.8

mW
mW/C

556

C/W

ORDERING INFORMATION
Device

Package

Shipping

BZX84CxxxET1

SOT23

3000/Tape & Reel

SOT23
(PbFree)

3000/Tape & Reel

SOT23

10,000/Tape & Reel

BZX84CxxxET1G
BZX84CxxxET3

PD
300
2.4

mW
mW/C

Thermal Resistance,
JunctiontoAmbient

RqJA

417

C/W

Junction and Storage


Temperature Range

TJ, Tstg

65 to
+150

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 132 of
this data sheet.

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

July, 2004 Rev. 3

131

Publication Order Number:


BZX84C2V4ET1/D

BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IF

Parameter

VZ

QVZ

VZ VR

IR VF
IZT

Maximum Temperature Coefficient of VZ


Max. Capacitance @ VR = 0 and f = 1 MHz

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking

Min

Nom

Max

ZZT1
(W)
@ IZT1
=
5 mA

BZX84C3V3ET1

BA4

3.1

3.3

3.5

BZX84C4V7ET1

BA9

4.4

4.7

BZX84C5V1ET1

BB1

4.8

5.1

BZX84C5V6ET1

BB2

5.2

BZX84C6V2ET1, G*

BB3

5.8

BZX84C6V8ET1

BB4

BZX84C7V5ET1

BB5

BZX84C10ET1

BB8

BZX84C12ET1
BZX84C15ET1

VZ2 (V)
@ IZT2 = 1 mA
(Note 4)
Min

Max

ZZT2
(W)
@ IZT2
=
1 mA

95

2.3

2.9

80

3.7

4.7

5.4

60

4.2

5.6

40

6.2

6.6

10

6.4

6.8

7.2

7.5

7.9

9.4

10

BC1

11.4

BC3

14.3

BZX84C16ET1

BC4

BZX84C18ET1

BC5

BZX84C24ET1

BC8

Device

Max
Reverse
Leakage
Current

qVZ
C (pF)
(mV/k)
@
@ IZT1=5 mA
VR = 0
f=
Min Max 1 MHz

Min

Max

ZZT3
(W)
@
IZT3=
20 mA

600

3.6

4.2

40

3.5

450

500

4.5

5.4

15

3.5

0.2

260

5.3

480

5.9

15

2.7

1.2

225

4.8

400

5.2

6.3

10

2.0

2.5

200

5.6

6.6

150

5.8

6.8

0.4

3.7

185

15

6.3

7.2

80

6.4

7.4

1.2

4.5

155

15

6.9

7.9

80

2.5

5.3

140

10.6

20

9.3

10.6

150

9.4

10.7

10

0.2

4.5

8.0

130

12

12.7

25

11.2

12.7

150

11.4

12.9

10

0.1

6.0

10.0

130

15

15.8

30

13.7

15.5

200

13.9

15.7

20

0.05

10.5

9.2

13.0

110

15.3

16

17.1

40

15.2

17

200

15.4

17.2

20

0.05

11.2

10.4

14.0

105

16.8

18

19.1

45

16.7

19

225

16.9

19.2

20

0.05

12.6

12.4

16.0

100

22.8

24

25.6

70

22.7

25.5

250

22.9

25.7

25

0.05

16.8

18.4

22.0

80

VZ1 Below
@ IZT1 = 2 mA

Device
Marking

Min

Nom

Max

BZX84C27ET1

BC9

25.1

27

28.9

BZX84C43ET1

BK6

40

43

46

Device

VZ3 (V)
@ IZT3=20 mA
(Note 4)

ZZT1
Below
@ IZT1
=
2 mA

VZ2 Below
@ IZT2 =
0.1 mA
Min

Max

ZZT2
Below
@ IZT4
=
0.5 mA

80

25

28.9

150

39.7

46

VZ3 Below
@ IZT3 = 10 m
A
Min

Max

ZZT3
Below
@ IZT3
=
10 mA

300

25.2

29.3

375

40.1

46.5

* The G suffix indicates PbFree package available.


4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C

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132

V
IR
@ R
(V)
mA

Max
Reverse
Leakage
Current

qVZ
(mV/k) Below
@ IZT1 = 2
mA

V
IR
@ R
(V)
mA

Min

Max

C (pF)
@ VR
=0
f=
1 MHz

45

0.05

18.9

21.4

25.3

70

80

0.05

30.1

37.6

46.6

40

BZX84C2V4ET1 Series

100

!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

TYPICAL TC VALUES

6
5
4

VZ @ IZT

TYPICAL TC VALUES

VZ @ IZT

10

2
1
0

2
3
2

4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)

11

12

10

100
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1000
IZ = 1 mA

TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

7 7 *+5&  +& 

1000

100

75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)

100

5 mA
20 mA
10

10

150C
1

10
VZ, NOMINAL ZENER VOLTAGE

100

1
0.4

Figure 3. Effect of Zener Voltage on


Zener Impedance

0.5

75C 25C

0C

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

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133

1.1

1.2

BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000

1000
0 V BIAS

 *#&/&)"  &

TA = 25C

*& & &A'

1 V BIAS

100
BIAS AT
50% OF VZ NOM

10
1
+150C

0.1

0.01

10

100

100

10
VZ, NOMINAL ZENER VOLTAGE (V)

0.001

+ 25C

0.0001

55C

0.00001

10

Figure 5. Typical Capacitance

100
I Z, ZENER CURRENT (mA)

TA = 25C
10

0.1

4
6
8
VZ, ZENER VOLTAGE (V)

10

0.1

0.01

12

10

TA = 25C

10

100

50
70
VZ, ZENER VOLTAGE (V)

PEAK VALUE IRSM @ 8 ms

tr

90

30

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10
0

90

Figure 8. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 7. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% OF PEAK PULSE CURRENT

 7 *7 "  &

80

Figure 6. Typical Leakage Current

100

0.01

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

20

40

60

t, TIME (ms)

Figure 9. 8 20 ms Pulse Waveform

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134

80

90

!7$!$,8
0
!7$+$8
   
    % 
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

http://onsemi.com

3
Cathode

Specification Features

PbFree Packages are Available


225 mW Rating on FR4 or FR5 Board
Zener Breakdown Voltage Range 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 138)

1
Anode

3
SOT23
CASE 318
STYLE 8

1
2

MARKING DIAGRAM

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

xxxM

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

xxx = Specific Device Code


M = Date Code

ORDERING INFORMATION

MAXIMUM RATINGS
Rating

Symbol

Total Power Dissipation on FR5 Board,


(Note 1) @ TA = 25C
25 C
Derated above 25C
Thermal Resistance, JunctiontoAmbient

PD

Total Power Dissipation on Alumina


Substrate, (Note 2) @ TA = 25C
25 C
Derated above 25C
Thermal Resistance, JunctiontoAmbient
Junction and Storage
Temperature Range

RqJA

Max

Unit

225
1.8
556

mW
mW/C
C/W

TJ, Tstg

Shipping

SOT23

3000/Tape & Reel

SOT23
(PbFree)

3000/Tape & Reel

BZX84CxxxLT3

SOT23

10,000/Tape & Reel

SOT23

3000/Tape & Reel

SOT23
(PbFree)

3000/Tape & Reel

SOT23

10,000/Tape & Reel

BZX84CxxxLT1

PD

RqJA

Package

Device*

BZX84CxxxLT1G

300
2.4
417

mW
mW/C
C/W

BZX84BxxxLT1

65 to
+150

BZX84BxxxLT3

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

BZX84BxxxLT1G

*The T1 suffix refers to an 8 mm, 7 inch reel.


The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 137 of
this data sheet.

Semiconductor Components Industries, LLC, 2004

June, 2004 Rev. 7

135

Publication Order Number:


BZX84C2V4LT1/D

BZX84B4V7LT1, BZX84C2V4LT1 Series


ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C


unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Parameter

Symbol
VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

QVZ
C

IF

VZ VR
IR VF
IZT

Maximum Temperature Coefficient of VZ

Zener Voltage Regulator

Max. Capacitance @ VR = 0 and f = 1 MHz

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136

BZX84B4V7LT1, BZX84C2V4LT1 Series


ELECTRICAL CHARACTERISTICS BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking

Min

Nom

Max

ZZT1
(W)
W
@ IZT1 =
5 mA

BZX84C2V4LT1, G*

Z11

2.2

2.4

2.6

BZX84C2V7LT1, G*

Z12

2.5

2.7

2.9

BZX84C3V0LT1

Z13

2.8

BZX84C3V3LT1, G*

Z14

3.1

BZX84C3V6LT1, G*

Z15

3.4

BZX84C3V9LT1, G*

Z16

BZX84C4V3LT1, G*
BZX84C4V7LT1

VZ2 (V)
@ IZT2 = 1 mA
(Note 3)

Min

Max

ZZT2
(W)
W
@ IZT2 =
1 mA

100

1.7

2.1

100

1.9

2.4

3.2

95

2.1

3.3

3.5

95

3.6

3.8

90

3.7

3.9

4.1

W9

4.3

Z1

4.4

4.7

BZX84C5V1LT1

Z2

4.8

BZX84C5V6LT1

Z3

5.2

BZX84C6V2LT1

Z4

BZX84C6V8LT1
BZX84C7V5LT1

VZ3 (V)
@ IZT3 = 20 mA
(Note 3)

Min

Max

ZZT3
(W)
W
@ IZT3 =
20 mA

600

2.6

3.2

50

600

3.6

50

2.7

600

3.3

3.9

2.3

2.9

600

3.6

2.7

3.3

600

3.9

90

2.9

3.5

600

4.6

90

3.3

80

3.7

4.7

5.1

5.4

60

4.2

5.3

5.6

40

4.8

5.8

6.2

6.6

10

5.6

Z5

6.4

6.8

7.2

15

Z6

7.5

7.9

15

BZX84C8V2LT1

Z7

7.7

8.2

8.7

BZX84C9V1LT1

Z8

8.5

9.1

BZX84C10LT1, G*

Z9

9.4

10

BZX84C11LT1, G*

Y1

10.4

11

BZX84C12LT1

Y2

11.4

BZX84C13LT1, G*

Y3

12.4

BZX84C15LT1

Y4

BZX84C16LT1, G*
BZX84C18LT1

Max Reverse
Leakage
Current

qVZ
(mV/k)
@ IZT1 = 5 mA

VR
Volts

Min

Max

C (pF)
@ VR = 0
f = 1 MHz

50

3.5

450

20

3.5

450

50

10

3.5

450

4.2

40

3.5

450

4.5

40

3.5

450

4.1

4.7

30

3.5

2.5

450

600

4.4

5.1

30

3.5

450

500

4.5

5.4

15

3.5

0.2

260

480

5.9

15

2.7

1.2

225

400

5.2

6.3

10

2.0

2.5

200

6.6

150

5.8

6.8

0.4

3.7

185

6.3

7.2

80

6.4

7.4

1.2

4.5

155

6.9

7.9

80

2.5

5.3

140

15

7.6

8.7

80

7.7

8.8

0.7

3.2

6.2

135

9.6

15

8.4

9.6

100

8.5

9.7

0.5

3.8

7.0

130

10.6

20

9.3

10.6

150

9.4

10.7

10

0.2

4.5

8.0

130

11.6

20

10.2

11.6

150

10.4

11.8

10

0.1

5.4

9.0

130

12

12.7

25

11.2

12.7

150

11.4

12.9

10

0.1

6.0

10.0

130

13

14.1

30

12.3

14

170

12.5

14.2

15

0.1

7.0

11.0

120

14.3

15

15.8

30

13.7

15.5

200

13.9

15.7

20

0.05

10.5

9.2

13.0

110

Y5

15.3

16

17.1

40

15.2

17

200

15.4

17.2

20

0.05

11.2

10.4

14.0

105

Y6

16.8

18

19.1

45

16.7

19

225

16.9

19.2

20

0.05

12.6

12.4

16.0

100

BZX84C20LT1

Y7

18.8

20

21.2

55

18.7

21.1

225

18.9

21.4

20

0.05

14

14.4

18.0

85

BZX84C22LT1

Y8

20.8

22

23.3

55

20.7

23.2

250

20.9

23.4

25

0.05

15.4

16.4

20.0

85

BZX84C24LT1

Y9

22.8

24

25.6

70

22.7

25.5

250

22.9

25.7

25

0.05

16.8

18.4

22.0

80

Device

VZ1 Below
@ IZT1 = 2 mA

VZ2 Below
@ IZT2 = 0.1 m
A

VZ3 Below
ZZT2
@ IZT3 = 10 mA
Below
@ IZT4 =
Min
Max
0.5 mA

Device
Marking

Min

Nom

Max

ZZT1
Below
@ IZT1 =
2 mA

Min

Max

BZX84C27LT1, G*

Y10

25.1

27

28.9

80

25

28.9

300

25.2

29.3

45

BZX84C30LT1

Y11

28

30

32

80

27.8

32

300

28.1

32.4

BZX84C33LT1

Y12

31

33

35

80

30.8

35

325

31.1

BZX84C36LT1

Y13

34

36

38

90

33.8

38

350

34.1

BZX84C39LT1, G*

Y14

37

39

41

130

36.7

41

350

BZX84C43LT1, G*

Y15

40

43

46

150

39.7

46

375

BZX84C47LT1

Y16

44

47

50

170

43.7

50

BZX84C51LT1

Y17

48

51

54

180

47.6

BZX84C56LT1

Y18

52

56

60

200

51.5

BZX84C62LT1

Y19

58

62

66

215

BZX84C68LT1

Y20

64

68

72

BZX84C75LT1, G*

Y21

70

75

79

Device

ZZT3
Below
@ IZT3 =
10 mA

IR
mA

Max Reverse
Leakage
Current

qVZ
(mV/k) Below
@ IZT1 = 2 mA

VR
(V)

Min

Max

C (pF)
@ VR = 0
f = 1 MHz

0.05

18.9

21.4

25.3

70

50

0.05

21

24.4

29.4

70

35.4

55

0.05

23.1

27.4

33.4

70

38.4

60

0.05

25.2

30.4

37.4

70

37.1

41.5

70

0.05

27.3

33.4

41.2

45

40.1

46.5

80

0.05

30.1

37.6

46.6

40

375

44.1

50.5

90

0.05

32.9

42.0

51.8

40

54

400

48.1

54.6

100

0.05

35.7

46.6

57.2

40

60

425

52.1

60.8

110

0.05

39.2

52.2

63.8

40

57.4

66

450

58.2

67

120

0.05

43.4

58.8

71.6

35

240

63.4

72

475

64.2

73.2

130

0.05

47.6

65.6

79.8

35

255

69.4

79

500

70.3

80.2

140

0.05

52.5

73.4

88.6

35

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
* The G suffix indicates PbFree package available.

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137

IR
mA

BZX84B4V7LT1, BZX84C2V4LT1 Series


ELECTRICAL CHARACTERISTICS BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

VZ (Volts) @ IZT = 5 mA
(Note 4)

IR
mA

qVZ
(mV/k)
@ IZT = 5 mA

Volts

Min

Max

C (pF)
@ VR =0,
f = 1 MHz

3.5

0.2

260

2.7

1.2

225

40

2.5

200

6.32

10

0.4

3.7

185

6.94

15

1.2

4.5

155

7.5

7.65

15

2.5

5.3

140

8.2

8.36

15

0.7

3.2

6.2

135

8.92

9.1

9.28

15

0.5

3.8

130

T19

15.7

16

16.3

40

0.05

11.2

10.4

14

105

T20

17.6

18

18.4

45

0.05

12.6

12.4

16

100

Device
Marking

Min

Nom

Max

Max

BZX84B4V7LT1

T10

4.61

4.7

4.79

80

BZX84B5V1LT1

T11

5.00

5.1

5.20

60

BZX84B5V6LT1

T12

5.49

5.6

5.71

BZX84B6V2LT1, G*

T13

6.08

6.2

BZX84B6V8LT1, G*

T14

6.66

6.8

BZX84B7V5LT1

T15

7.35

BZX84B8V2LT1, G*

T16

8.04

BZX84B9V1LT1, G*

T17

BZX84B16LT1
BZX84B18LT1

Device

Max Reverse
Leakage
Current

ZZT (W) @
IZT = 5 mA
(Note 4)

VR
@

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
* The G suffix indicates PbFree package available.

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138

BZX84B4V7LT1, BZX84C2V4LT1 Series



!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

5 &#  !&#"





!7 0 7





.
.G
.G



3
2
;

!7*  &# 7 !# &) !





5 &#  !&#"

!7 0 7





!7*  &# 7 !# &) !

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)


7 1  &



8 1 
7& 1 , 7+
E 1  ?(F

'*' %& +"  &

7 7 *+5&  +& 



3 !  4734# 
; !  4734# 



 &
 &

10




1


!7*  &# 7 !# &)




,

Figure 3. Effect of Zener Voltage on


Zener Impedance

,

3 
,



,3
,2
,;
,
!'* ' %& + !# &) !

Figure 4. Typical Forward Voltage

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139

,

,

BZX84B4V7LT1, BZX84C2V4LT1 Series


TYPICAL CHARACTERISTICS




*& & &A'

 ! 4&

 ! 4&

 *#&/&)"  &

& 1 


4&
&
- ' !7 





!7*  &# 7 !# &) !




H

,
,

,

HG 

,

.G 

,



Figure 5. Typical Capacitance



& 1 



,

,



2
!7* 7 !# &) !





3
!7*  &# 7 !# &) !

2

Figure 6. Typical Leakage Current

 7 *7 "  &

 7 *7 "  &









& 1 



,

,






3
!7* 7 !# &) !

;

Figure 8. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 7. Zener Voltage versus Zener Current


(VZ Up to 12 V)

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140

;

(9 9:

Preferred Device

  
  
 
Dual Common Anode Zeners for ESD
Protection
http://onsemi.com

These dual monolithic silicon zener diodes are designed for


applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.

1
3
2

MARKING
DIAGRAM

Features

PbFree Package is Available


SC70 Package Allows Two Separate Unidirectional Configurations
Low Leakage < 1.0 mA @ 5.0 V
Breakdown Voltage: 6.47.2 V @ 5.0 mA
ESD Protection Meeting:16 kV Human Body Model
30 kV Contact = IEC6100042
Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1
Peak Power: 150 W @ 20 ms (Unidirectional), per Figure 2
Void Free, TransferMolded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications

Symbol

Value

Unit

PD

200
1.6

mW
mW/C

RqJA

618

C/W

TJ, Tstg

55 to
+150

Peak Power Dissipation @ 1.0 ms


(Note 2) @ TA = 25C

PPK

20

Peak Power Dissipation @ 20 ms (Note 3)


@ TA = 25C

PPK

150

ESD Discharge
MIL STD 883C Method 30156
IEC6100042, Air Discharge
IEC6100042, Contact Discharge

VPP

Steady State Power Dissipation


Derate above 25C (Note 1)
Thermal Resistance JunctiontoAmbient
Operating Junction and Storage
Temperature Range

68

68
M

= Specific Device Code


= Date Code

Device

Package

Shipping

DF3A6.8FUT1

SC70

3000/Tape & Reel

SC70
(PbFree)

3000/Tape & Reel

DF3A6.8FUT1G

MAXIMUM RATINGS
Rating

2
SC70/SOT323
CASE 419
STYLE 4

ORDERING INFORMATION

Mechanical Characteristics

1
M

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.

kV
16
30
30

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in.
2. Nonrepetitive pulse per Figure 1.
3. Nonrepetitive pulse per Figure 2.
Semiconductor Components Industries, LLC, 2004

July, 2004 Rev. 1

141

Publication Order Number:


DF3A6.8FUT1/D

DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter

Symbol
VRWM
IR
VBR

IF

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM

VC VBR VRWM

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

ZZK

Maximum Zener Impedance @ IZK

IR VF
IT

Breakdown Voltage @ IT

IPP

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter

Symbol

Conditions

Forward Voltage

VF

IF = 10 mA

Zener Voltage (Note 4)

VZ

IZT = 5 mA

Operating Resistance (Note 5)

ZZK

IZK = 0.5 mA

Min

6.4

Typ

Max

Unit

0.8

0.9

6.8

7.2

200

ZZT

IZT = 5 mA

50

Reverse Current

IR1

VRWM = 5 V

0.5

mA

Clamping Voltage

VC

IPP = 2.0 A (Figure 1)


IPP = 9.37 A (Figure 2)

9.6

16

ESD Protection

kV
Human Body Model (HBM)
Contact IEC6100042
Air Discharge

16
30
30

4. VZ measured at pulse test current IZT at an ambient temperature of 25C.


5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.

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142

DF3A6.8FUT1

PULSE WIDTH (tP) IS


DEFINED AS THAT POINT
WHERE THE PEAK
CURRENT DECAYS TO
50%OF IRSM.
tr 10 ms

tr
PEAK VALUE IRSM

VALUE (%)

100

50

% OF PEAK PULSE CURRENT

TYPICAL CHARACTERISTICS

IRS
HALF VALUE
2
M


100

PEAK VALUE IRSM @ 8 ms

tr

90

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10

20

40

t, TIME (ms)

Figure 1. 10 1000 ms Pulse Waveform


REVERSE VOLTAGE IS
MEASURED WITH A PULSE
TEST CURRENT IT AT 25C

,

FORWARD VOLTAGE IS
MEASURED WITH A PULSE
TEST CURRENT IF AT 25C

2
 ' *' %& +"  &

 7 *7 "  &

2,
,
,
,
2,
,
,
,





2




,

,

,

,2

3,

3,

3,


,

3,2

,

!7* 7 !# &) !

,3

,2

,;

,

,

,

!'* ' %& + !# &) !

Figure 3. Zener Voltage vs. Zener Current

Figure 4. Forward Voltage vs. Forward


Current




2

+ * % +

 & %

f = 1 MHz
TA = 25C

;
*& & &A'

80

Figure 2. 8 20 ms Pulse Waveform

,

60

t, TIME (ms)

3
UniDirectional Pin 1/23






BiDirectional Pin 12














!* 4&
!# &) !





3







&* & 4   & "  

Figure 5. Capacitance vs. Bias Voltage

Figure 6. Steady State Power Derating Curve

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143

3

DF3A6.8FUT1

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144

(9 9:

;6 < 4
/(  #
This quad voltage suppressor is designed for applications requiring
transient overvoltage protection capability. It is intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its quad junction common anode design protects
four separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
Specification Features

SC88 Package Allows Four Separate Unidirectional Configurations


Low Leakage < 1 mA @ 5 Volt
Breakdown Voltage: 6.4 7.2 Volt @ 5 mA
Low Capacitance (40 pF typical)
ESD Protection Meeting 6100042 Level 4
and 16 kV Human Body Model

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MARKING
DIAGRAM

Mechanical Characteristics

Void Free, TransferMolded, Thermosetting Plastic Case


Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications

SC88
CASE 419B
PLASTIC

Rating

Symbol

Value

Unit

Peak Power Dissipation @ 8 x 20 ms


(Note 1)

Ppk

75

Watts

Steady State Power Dissipation


(Note 2)

PD

68d
1

ORDERING INFORMATION

Thermal Resistance
Junction to Ambient
Derate Above 25C

RqJA

Maximum Junction Temperature


Operating Junction and Storage
Temperature Range

Lead Solder Temperature


(10 seconds duration)

68 = Device Marking
d = One Digit Date Code
= Pin 1 Indicator

MAXIMUM RATINGS (TA = 25C unless otherwise noted)

ESD Discharge
MIL STD 883C Method 30156
IEC6100042, Air Discharge
IEC6100042, Contact Discharge

385

mW

Device
DF6A6.8FUT1

328
3.0

C/W
mW/C

TJmax

150

TJ, Tstg

55 to
+150

VPP

Package

Shipping

SC88

3000/Tape & Reel

kV
16
16
8

TL

260

1. Per Waveform Figure 1


2. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in.

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 0

145

Publication Order Number:


DF6A6.8FUT1/D

DF6A6.8FUT1
I
IF

VBR VRWM

IR VF
IT

VI Curve
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VBR @ 5 mA (Volts)

Leakage Current
IRM @ VRWM = 5 V

Typical
Capacitance
@ 0 V Bias

Max
VF @ IF = 10 mA

Max
ZZ @
5 mA

Max
ZZK @
0.5 mA

Device

Device
Marking

Min

Nom

Max

(mA)

(pF)

(V)

(W)

(W)

DF6A6.8FUT1

68

6.4

6.8

7.2

1.0

40

1.25

30

300



90

50

&/ !&#" 
0 2 m
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY

% OF PEAK PULSE CURRENT

100

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

80
70
60

(&#' !&#" 
: 0  m

50
40
30

20
10
0

45
40
35
30
25
20
15
10

20

40

60

80

t, TIME (ms)

BIAS VOLTAGE (VOLTS)

Figure 1. 8 20 ms Pulse Waveform

Figure 2. Capacitance

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146

DF6A6.8FUT1
Ipp , PEAK PULSE CURRENT (AMPS)

IF, FORWARD CURRENT (A)

0.1

0.01

0.001

0.0001
0.6

0.7

0.8

0.9

1.0

1.1

1.2

10

8 x 20 ms per Figure 1

1
8

10

11

VF, FORWARD VOLTAGE (VOLTS)

VC, CLAMPING VOLTAGE (VOLTS)

Figure 3. Forward Voltage

Figure 4. Clamping Voltage versus Peak


Pulse Current

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147

12

 , 8

Preferred Device

  
  
 
SOT23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.

http://onsemi.com
PIN 1. CATHODE
2. CATHODE
3. ANODE

Specification Features:

Configurations
Low Leakage < 1 mA @ 5 Volt
Breakdown Voltage: 7.27.9 Volt @ 5 mA
Low Capacitance (80 pF typical @ 0 Volts, 1 MHz)
ESD Protection Meeting: 16 kV Human Body Model
ESD Protection Meeting: 30 kV Air and Contact Discharge

M = Date Code

ORDERING INFORMATION
Device

Package

Shipping

MA3075WALT1

SOT23

3000/Tape & Reel

Preferred devices are recommended choices for future use


and best overall value.

MAXIMUM RATINGS
Symbol

Value

Unit

Peak Power Dissipation @ 100 s


(Note 1)

Ppk

15

Watts

Steady State Power Dissipation


Derate above 25C
(Note 2)

PD

225
1.8

mW
mW/C

Thermal Resistance
Junction to Ambient

RJA

556

C/W

Maximum Junction Temperature

RJA

417

C/W

Operating Junction and Storage


Temperature Range

TJ, Tstg

55 to +150

ESD Discharge
MIL STD 883C Method 30156
IEC6100042, Air Discharge
IEC6100042, Contact Discharge

7W5

2
SOT23
CASE 318
STYLE 12

Void Free, TransferMolded, Thermosetting Plastic Case


Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications

Rating

MARKING
DIAGRAM

Mechanical Characteristics:

3
2

SOT23 Package Allows Two Separate Unidirectional

VPP

kV
16
30
30

1. Nonrepetitive 100 ms pulse width


2. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in.

Semiconductor Components Industries, LLC, 2002

January, 2002 Rev. 1

148

Publication Order Number:


MA3075WALT1/D

MA3075WALT1
I
IF

VC VBR VRWM
IR VF
IT

IPP

UniDirectional TVS

ELECTRICAL CHARACTERISTICS
Parameter

Symbol

Conditions

Forward Voltage

VF

IF = 10 mA

Zener Voltage*2

VZ

IZ = 5 mA

Operating Resistance

RZK

Reverse Current

7.2

Typ

Max

Unit

0.8

0.9

7.5

7.9

120

15

mA

IZ = 0.5 mA

RZ

IZ = 5 mA

IR1

VR = 5 V

IR2

VR = 6.5 V

Temperature Coefficient of Zener Voltage*3

SZ

IZ = 5 mA

Terminal Capacitance

Ct

VR = 0 V

300

2.5

250
200
150
100
50
0

4.0

60

mA

5.3

mV/C

80

100
% OF PEAK PULSE CURRENT

PD, POWER DISSIPATION (mW)

Min

PEAK VALUE IRSM @ 8 ms

tr

90

pF

PULSE WIDTH (tp) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tp

20
10
0

25

50

75
100
125
TEMPERATURE (C)

150

175

20

40
t, TIME (ms)

60

Figure 2. 8 X 20 ms Pulse Waveform

Figure 1. Steady State Power Derating Curve

http://onsemi.com
149

80

MA3075WALT1
100
IF, FORWARD CURRENT (mA)

PPK, PEAK POWER (W)

1000

100

10

TA = 85C

10

25C
1

0.1

0.01
10

100
tp, PULSE WIDTH (ms)

1000

0.2

Figure 3. Pulse Rating Curve

1.2

1000
IR, LEAKAGE CURRENT (nA)

VF, FORWARD VOLTAGE (V)

0.8
0.4
0.6
VF, FORWARD VOLTAGE (V)

Figure 4. Forward Current versus


Forward Voltage

1.2
1
IF = 100 mA
0.8
3 mA
0.6
10 mA
0.4
0.2
0
60

100

TA = 85C
40C

10
25C
1

0.1

0.01
40

20
0
40
60
20
TA, AMBIENT TEMPERATURE (C)

80

100

Figure 5. Forward Voltage versus Temperature

4
5
6
2
3
VR, REVERSE VOLTAGE (V)

Figure 6. Leakage Current versus


Reverse Voltage

1000

100
TA = 40C

VR = 6 V

IZ, ZENER CURRENT (mA)

IR, LEAKAGE CURRENT (nA)

40C

100
VR = 5 V
10

85C

10
25C
1

0.1

0.01

VR = 1 V
0.1
60

0.001
40

20
0
40
60
20
TA, AMBIENT TEMPERATURE (C)

80

100

5.5

Figure 7. Leakage Current versus Temperature

7
7.5
6.5
VZ, ZENER VOLTAGE (V)

Figure 8. Zener Current versus


Zener Voltage

http://onsemi.com
150

8.5

MA3075WALT1
90

RZ, OPERATING RESISTANCE (W)

100

Cd, CAPACITANCE (pF)

80
f = 1 MHz
TA = 25C

70
60
50
40
30
20
10
0

10

0.1
0

2
3
4
5
6
VR, REVERSE VOLTAGE (V)

0.1

Figure 9. Capacitance

10
1
IZ, ZENER CURRENT (mA)

Figure 10. Operating Resistance versus


Zener Current

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151

100

MA3075WALT1
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

interface between the board and the package. With the


correct pad geometry, the packages will self align when
subjected to a solder reflow process.
,3
,;

,3
,;

,3;
,
,
,;
,
,2

inches
mm

SOT23
SOT23 POWER DISSIPATION
SOLDERING PRECAUTIONS

The power dissipation of the SOT23 is a function of the


drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT23 package, PD can be calculated as
follows:
PD =

The melting temperature of solder is higher than the rated


temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10C.
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.

TJ(max) TA
RJA

The values for the equation are found in the maximum


ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD = 150C 25C = 225 milliwatts
556C/W

The 556C/W for the SOT23 package assumes the use


of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

* Soldering a device without preheating can cause excessive


thermal shock and stress which can result in damage to the
device.

http://onsemi.com
152

 +$
 /%./
    % 
200 mW SOD323 Surface Mount
Tight Tolerance Portfolio
This series of Zener diodes is packaged in a SOD323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, handheld portables,
and high density PC boards.

http://onsemi.com

1
Cathode

2
Anode

MARKING
DIAGRAM

Specification Features:

Standard Zener Breakdown Voltage Range

2.4 V to 12 V
Steady State Power Rating of 200 mW
Small Body Outline Dimensions:
0.067 x 0.049 (1.7 mm x 1.25 mm)
Low Body Height: 0.035 (0.9 mm)
Package Weight: 4.507 mg/unit
ESD Rating of Class 3 (>16 kV) per Human Body Model
Tight Tolerance VZ
PbFree Packages are Available

xx M

SOD323
CASE 477
STYLE 1

xx = Specific Device Code


M = Date Code

ORDERING INFORMATION

Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


LEADS: Plated with PbSn or Sn only (PbFree)
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0
MOUNTING POSITION: Any

Device

Package

Shipping

MM3ZxxxST1

SOD323

3000/Tape & Reel

MM3ZxxxST3

SOD323

10,000/Tape & Reel

MM3ZxxxST1G

SOD323
(PbFree)

3000/Tape & Reel

MM3ZxxxST3G

SOD323
(PbFree)

10,000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


MAXIMUM RATINGS
Rating
Total Device Dissipation FR5 Board,
(Note 1) @ TA = 25C
Derate above 25C
Thermal Resistance from
JunctiontoAmbient
Junction and Storage
Temperature Range

Symbol

Max

Unit

200
1.5

mW
mW/C

RqJA

635

C/W

TJ, Tstg

65 to +150

PD

See specific marking information in the device marking


column of the Electrical Characteristics table on page 154 of
this data sheet.

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 Minimum Pad

Semiconductor Components Industries, LLC, 2004

July, 2004 Rev. 9

153

Publication Order Number:


MM3Z2V4ST1/D

MM3Z2V4ST1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol

Parameter

VZ

Reverse Zener Voltage @ IZT

I
IF

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

QVZ
C

VZ VR

IR VF
IZT

Maximum Temperature Coefficient of VZ

Zener Voltage Regulator

Max. Capacitance @VR = 0 and f = 1 MHz

ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)


ZZT
IZ = IZT
@ 10%
Mod W
Max

mA

Min

Max

C pF Max @
VR = 0
f = 1 MHz

Max
IR @ VR

dVZ/dt (mV/k)
@ IZT1 = 5 mA

Min

Max

ZZK IZ
= 0.5
mA W
Max

5.0

2.43

2.63

1000

100

120

1.0

3.5

450

T3

5.0

2.67

2.91

1000

100

100

1.0

3.5

450

MM3Z3V3ST1

T5

5.0

3.32

3.53

1000

95

5.0

1.0

3.5

450

MM3Z3V3TT1, G

TX

5.0

3.19

3.41

100

95

5.0

1.0

3.5

450

MM3Z3V6ST1, G

T6

5.0

3.60

3.85

1000

90

5.0

1.0

3.5

450

MM3Z3V9ST1, G

T7

5.0

3.89

4.16

1000

90

3.0

1.0

3.5

2.5

450

MM3Z4V3ST1

T8

5.0

4.17

4.43

1000

90

3.0

1.0

3.5

450

MM3Z4V7ST1, G

T9

5.0

4.55

4.75

800

80

3.0

2.0

3.5

0.2

260

MM3Z5V1ST1

TA

5.0

4.98

5.2

500

60

2.0

2.0

2.7

1.2

225

MM3Z5V6ST1

TC

5.0

5.49

5.73

200

40

1.0

2.0

2.0

2.5

200

MM3Z6V2ST1

TE

5.0

6.06

6.33

100

10

3.0

4.0

0.4

3.7

185

MM3Z6V8ST1

TF

5.0

6.65

6.93

160

15

2.0

4.0

1.2

4.5

155

MM3Z7V5ST1

TG

5.0

7.28

7.6

160

15

1.0

5.0

2.5

5.3

140

MM3Z8V2ST1

TH

5.0

8.02

8.36

160

15

0.7

5.0

3.2

6.2

1358

MM3Z9V1ST1

TK

5.0

8.85

9.23

160

15

0.5

6.0

3.8

7.0

130

MM3Z10VST1

WB

5.0

9.80

10.20

160

15

0.5

6.0

4.5

8.0

130

MM3Z11VST1

WC

5.0

10.78

11.22

160

15

0.5

7.0

5.4

9.0

130

MM3Z12VST1

TN

5.0

11.74

12.24

80

25

0.1

8.0

6.0

10

130

MM3Z15VST1*

WF

5.0

14.7

15.3

80

30

0.05

10.5

9.2

13

110

Device
Marking

Test
Current
Izt mA

MM3Z2V4ST1

T2

MM3Z2V7ST1

Device

Zener Voltage VZ

*Product preview parts available upon request.

http://onsemi.com
154

MM3Z2V4ST1 SERIES
Typical Characteristics
1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

IF, FORWARD CURRENT (mA)

Z ZT , DYNAMIC IMPEDANCE ( )

1000

100

100

IZ = 1 mA
10
5 mA

150C

10

75C
3.0

10

0.4

0.5

0C

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

VZ, NOMINAL ZENER VOLTAGE

Figure 1. Effect of Zener Voltage on


Zener Impedance

1.1

1.2

Figure 2. Typical Forward Voltage

1000
TA = 25C
0 V BIAS

1 V BIAS

100
BIAS AT
50% OF VZ NOM
10

IR, LEAKAGE CURRENT ( A)

1000

C, CAPACITANCE (pF)

25C

1.0

1.0

100
10
1.0
+150C

0.1
0.01

+ 25C

0.001

55C

0.0001
0.00001

1.0
4.0

10
VZ, NOMINAL ZENER VOLTAGE (V)

5.0
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 3. Typical Capacitance

Figure 4. Typical Leakage Current

100

10

100

80
10

% +

 & -

I Z , ZENER CURRENT (mA)

TA = 25C

1.0

0.1

0.01

60

40

20

2.0

4.0
6.0
VZ, ZENER VOLTAGE (V)

8.0

10

25

50
75
100
TEMPERATURE (C)

125

Figure 6. Steady State Power Derating

Figure 5. Zener Voltage versus Zener Current


(VZ Up to 9 V)

http://onsemi.com
155

150

 +$
 /%./
    % 
200 mW SOD323 Surface Mount
This series of Zener diodes is packaged in a SOD323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

http://onsemi.com

Specification Features:

1
Cathode

Standard Zener Breakdown Voltage Range 2.4 V to 75 V


Steady State Power Rating of 200 mW
Small Body Outline Dimensions:

MARKING
DIAGRAM

0.067 x 0.049 (1.7 mm x 1.25 mm)


Low Body Height: 0.035 (0.9 mm)
Package Weight: 4.507 mg/unit
ESD Rating of Class 3 (>16 kV) per Human Body Model
PbFree Package is Available

xx M
SOD323
CASE 477

Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

Thermal Resistance from


Junction to Ambient
Junction and Storage
Temperature Range

Symbol

TJ, Tstg

Shipping{

MM3ZxxxT1

SOD323

3000/Tape & Reel

MM3ZxxxT1G

SOD323
(PbFree)

3000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Max

Unit

200
1.5

mW
mW/C

635

C/W

DEVICE MARKING INFORMATION

See specific marking information in the device marking


column of the Electrical Characteristics table on page 158 of
this data sheet.

PD

RqJA

Package

Device

MAXIMUM RATINGS

Total Device Dissipation FR5 Board,


(Note 1) @ TA = 25C
Derate above 25C

xx = Specific Device Code


M = Date Code

ORDERING INFORMATION

LEADS: Plated with PbSn or Sn only (PbFree)


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0
MOUNTING POSITION: Any

Rating

2
Anode

65 to
+150

1. FR4 Minimum Pad

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 6

156

Publication Order Number:


MM3Z2V4T1/D

MM3Z2V4T1 SERIES
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted,


VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

QVZ
C

IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

Maximum Temperature Coefficient of VZ


Max. Capacitance @VR = 0 and f = 1 MHz

http://onsemi.com
157

MM3Z2V4T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Zener Voltage (Note 2)

Zener Impedance

Leakage Current

Q Z
QV
(mV/k)
@ IZT

C
@ VR = 0
f = 1 MHz

@ IZT

ZZT
@ IZT

Max

mA

mA

mA

Volts

Min

Max

pF

2.4
2.7
3.0
3.3
3.6

2.6
2.9
3.2
3.5
3.8

5
5
5
5
5

100
100
100
95
90

1000
1000
1000
1000
1000

0.5
0.5
0.5
0.5
0.5

50
20
10
5
5

1.0
1.0
1.0
1.0
1.0

3.5
3.5
3.5
3.5
3.5

0
0
0
0
0

450
450
450
450
450

3.7
4.0
4.4
4.8
5.2

3.9
4.3
4.7
5.1
5.6

4.1
4.6
5.0
5.4
6.0

5
5
5
5
5

90
90
80
60
40

1000
1000
800
500
200

0.5
0.5
0.5
0.5
0.5

3
3
3
2
1

1.0
1.0
2.0
2.0
2.0

3.5
3.5
3.5
2.7
2.0

2.5
0
0.2
1.2
2.5

450
450
260
225
200

0E
0F
0G
0H
0K

5.8
6.4
7.0
7.7
8.5

6.2
6.8
7.5
8.2
9.1

6.6
7.2
7.9
8.7
9.6

5
5
5
5
5

10
15
15
15
15

100
160
160
160
160

0.5
0.5
0.5
0.5
0.5

3
2
1
0.7
0.2

4.0
4.0
5.0
5.0
7.0

0.4
1.2
2.5
3.2
3.8

3.7
4.5
5.3
6.2
7.0

185
155
140
135
130

MM3Z10VT1
MM3Z11VT1
MM3Z12VT1
MM3Z13VT1
MM3Z15VT1

0L
0M
0N
0P
0T

9.4
10.4
11.4
12.4
14.3

10
11
12
13.25
15

10.6
11.6
12.7
14.1
15.8

5
5
5
5
5

20
20
25
30
30

160
160
80
80
80

0.5
0.5
0.5
0.5
0.5

0.1
0.1
0.1
0.1
0.05

8.0
8.0
8.0
8.0
10.5

4.5
5.4
6.0
7.0
9.2

8.0
9.0
10
11
13

130
130
130
120
110

MM3Z16VT1
MM3Z18VT1
MM3Z20VT1
MM3Z22VT1
MM3Z24VT1

0U
0W
0Z
10
11

15.3
16.8
18.8
20.8
22.8

16.2
18
20
22
24.2

17.1
19.1
21.2
23.3
25.6

5
5
5
5
5

40
45
55
55
70

80
80
100
100
120

0.5
0.5
0.5
0.5
0.5

0.05
0.05
0.05
0.05
0.05

11.2
12.6
14.0
15.4
16.8

10.4
12.4
14.4
16.4
18.4

14
16
18
20
22

105
100
85
85
80

MM3Z27VT1
MM3Z30VT1
MM3Z33VT1
MM3Z36VT1
MM3Z39VT1

12
14
18
19
20

25.1
28
31
34
37

27
30
33
36
39

28.9
32
35
38
41

2
2
2
2
2

80
80
80
90
130

300
300
300
500
500

0.5
0.5
0.5
0.5
0.5

0.05
0.05
0.05
0.05
0.05

18.9
21.0
23.2
25.2
27.3

21.4
24.4
27.4
30.4
33.4

25.3
29.4
33.4
37.4
41.2

70
70
70
70
45

MM3Z43VT1
MM3Z47VT1
MM3Z51VT1
MM3Z56VT1
MM3Z62VT1

21
1A
1C
1D
1E

40
44
48
52
58

43
47
51
56
62

46
50
54
60
66

2
2
2
2
2

150
170
180
200
215

500
500
500
500
500

0.5
0.5
0.5
0.5
0.5

0.05
0.05
0.05
0.05
0.05

30.1
32.9
35.7
39.2
43.4

37.6
42.0
46.6
52.2
58.8

46.6
51.8
57.2
63.8
71.6

40
40
40
40
35

MM3Z68VT1
MM3Z75VT1

1F
1G

64
70

68
75

72
79

2
2

240
255

500
500

0.5
0.5

0.05
0.05

47.6
52.5

65.6
73.4

79.8
88.6

35
35

VZ (Volts)

Device

Device
Marking

Min

Nom

MM3Z2V4T1
MM3Z2V7T1
MM3Z3V0T1
MM3Z3V3T1
MM3Z3V6T1

00
01
02
05
06

2.2
2.5
2.8
3.1
3.4

MM3Z3V9T1
MM3Z4V3T1
MM3Z4V7T1
MM3Z5V1T1
MM3Z5V6T1

07
08
09
0A
0C

MM3Z6V2T1
MM3Z6V8T1
MM3Z7V5T1
MM3Z8V2T1
MM3Z9V1T1

ZZK @ IZK

IR @ VR

2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.

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158

MM3Z2V4T1 SERIES
TYPICAL CHARACTERISTICS
1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

IF, FORWARD CURRENT (mA)

Z ZT , DYNAMIC IMPEDANCE ( )

1000

100

100

IZ = 1 mA

5 mA

10

150C

10

75C
3.0

10
VZ, NOMINAL ZENER VOLTAGE

80

0.4

Figure 1. Effect of Zener Voltage on


Zener Impedance

0C

0.5

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

1.1

1.2

Figure 2. Typical Forward Voltage

1000
TA = 25C
0 V BIAS

100

1 V BIAS

BIAS AT
50% OF VZ NOM

10

IR, LEAKAGE CURRENT ( A)

1000

C, CAPACITANCE (pF)

25C

1.0

1.0

100
10
1.0
+150C

0.1
0.01

0.001

+ 25C

0.0001

55C

0.00001

1.0
4.0

10
VZ, NOMINAL ZENER VOLTAGE (V)

70

Figure 3. Typical Capacitance

10

20
30
40
50
60
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 4. Typical Leakage Current

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159

70

MM3Z2V4T1 SERIES
TYPICAL CHARACTERISTICS
100

100

TA = 25C
IZ , ZENER CURRENT (mA)

10

1.0

0.1

0.01

10

0.1

0.01
0

2.0

4.0
6.0
8.0
VZ, ZENER VOLTAGE (V)

10

12

10

30

50
70
VZ, ZENER VOLTAGE (V)

100

80

60

40

20
0

25

90

Figure 6. Zener Voltage versus Zener Current


(12 V to 75 V)

Figure 5. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% +

 & -

I Z , ZENER CURRENT (mA)

TA = 25C

50
75
100
TEMPERATURE (C)

125

Figure 7. Steady State Power Derating

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160

150

+$
 /%./
    % 
100 mW SOD523 Surface Mount
This series of Zener diodes is packaged in a SOD523 surface
mount package. They are designed to provide voltage regulation
protection and are especially attractive in situations where space is at a
premium. They are well suited for applications such as cellular
phones, hand held portables, and high density PC boards.

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Specification Features

Standard Zener Breakdown Voltage Range 2.4 V to 9.1 V


Steady State Power Rating of 100 mW
Small Body Outline Dimensions:

1
Cathode

0.047 x 0.032 (1.20 mm x 0.80 mm)


Low Body Height: 0.028 (0.7 mm)
ESD Rating of Class 3 (>16 kV) per Human Body Model
Tight Tolerance VZ
These devices are manufactured with a PbFree external lead
finish only.

2
Anode

2
1
SOD523
CASE 502

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic

MARKING DIAGRAM

Epoxy Meets UL 94, V0


LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any

XXd
1

QUALIFIED MAX REFLOW TEMPERATURE: 260C

Device Meets MSL 1 Requirements


XX = Specific Device Code
d
= Date Code

MAXIMUM RATINGS
Rating
Total Device Dissipation FR5 Board,
(Note 1) @ TA = 25C
Derate above 25C
Thermal Resistance from
JunctiontoAmbient
Junction and Storage Temperature Range

Symbol

Max

Unit

200
1.5

mW
mW/C

RqJA

635

C/W

TJ, Tstg

65 to
+150

PD

ORDERING INFORMATION

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 Minimum Pad.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 2

161

Device
MM5ZxxxST1

Package

Shipping

SOD523
(PbFree)

3000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 162 of
this data sheet.

Publication Order Number:


MM5Z2V4ST1/D

MM5Z2V4ST1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol

I
IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

QVZ

Maximum Temperature Coefficient of VZ

Max. Capacitance @VR = 0 and f = 1 MHz

VZ VR

IR VF
IZT

Figure 1. Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)


Zener Voltage
VZ

ZZT
IZ = IZT
@ 10%
Mod W
Max

Max
IR @ VR

dVZ/dt (mV/k)
@ IZT1 = 5 mA

Device

Device
Marking

Test
Current
Izt mA

Min

Max

ZZK IZ
= 0.5
mA W
Max

mA

Min

Max

C pF Max @
VR = 0
f = 1 MHz

MM5Z2V4ST1

T2

5.0

2.43

2.63

1000

100

120

1.0

3.5

450

MM5Z2V7ST1

T3

5.0

2.67

2.91

1000

100

100

1.0

3.5

450

MM5Z3V6ST1

T6

5.0

3.60

3.85

1000

90

5.0

1.0

3.5

450

MM5Z3V9ST1

T7

5.0

3.89

4.16

1000

90

3.0

1.0

3.5

2.5

450

MM5Z4V3ST1

T8

5.0

4.17

4.43

1000

90

3.0

1.0

3.5

450

MM5Z4V7ST1

T9

5.0

4.55

4.75

800

80

3.0

2.0

3.5

0.2

260

MM5Z5V1ST1

TA

5.0

4.98

5.2

500

60

2.0

2.0

2.7

1.2

225

MM5Z5V6ST1

TC

5.0

5.49

5.73

200

40

1.0

2.0

2.0

2.5

200

MM5Z6V2ST1

TE

5.0

6.06

6.33

100

10

3.0

4.0

0.4

3.7

185

MM5Z6V8ST1

TF

5.0

6.65

6.93

160

15

2.0

4.0

1.2

4.5

155

MM5Z7V5ST1

TG

5.0

7.28

7.6

160

15

1.0

5.0

2.5

5.3

140

MM5Z8V2ST1

TH

5.0

8.02

8.36

160

15

0.7

5.0

3.2

6.2

1358

MM5Z9V1ST1

TK

5.0

8.85

9.23

160

15

0.5

6.0

3.8

7.0

130

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162

MM5Z2V4ST1 SERIES
100

% +

 & -

80

60

40

20
0

25

50

75

100

125

TEMPERATURE (C)

Figure 2. Steady State Power Derating

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163

150

+$
 /%./
    % 
100 mW SOD523 Surface Mount
This series of Zener diodes is packaged in a SOD523 surface
mount package. They are designed to provide voltage regulation
protection and are especially attractive in situations where space is at a
premium. They are well suited for applications such as cellular
phones, hand held portables, and high density PC boards.

http://onsemi.com

Specification Features:

Standard Zener Breakdown Voltage Range 2.4 V to 75 V


Steady State Power Rating of 100 mW
Small Body Outline Dimensions:

1
Cathode

0.047 x 0.032 (1.20 mm x 0.80 mm)


Low Body Height: 0.028 (0.7 mm)
ESD Rating of Class 3 (>16 kV) per Human Body Model

2
Anode

2
1
SOD523
CASE 502
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any

MARKING DIAGRAM

QUALIFIED MAX REFLOW TEMPERATURE: 260C

Device Meets MSL 1 Requirements

XXd
1

XX = Specific Device Code


d
= Date Code

MAXIMUM RATINGS
Rating
Total Device Dissipation FR5 Board,
@ TA = 25C
Junction and Storage
Temperature Range

Symbol

Max

Unit

PD

100

mW

TJ, Tstg

65 to
+150

ORDERING INFORMATION
Device

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

MM5ZxxxxT1

Package

Shipping

SOD523

3000/Tape & Reel

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 166 of this data sheet.

Semiconductor Components Industries, LLC, 2004

July, 2004 Rev. 2

164

Publication Order Number:


MM5Z2V4T1/D

MM5Z2V4T1 SERIES
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted,


VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

QVZ
C

IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

Maximum Temperature Coefficient of VZ


Max. Capacitance @VR = 0 and f = 1 MHz

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165

MM5Z2V4T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Zener Voltage (Note 1)

Zener Impedance

Leakage Current

Q Z
QV
(mV/k)
@ IZT

C
@ VR = 0
f = 1 MHz

@ IZT

ZZT
@ IZT

Max

mA

mA

mA

Volts

Min

Max

pF

2.4
2.7
3.0
3.3
3.6

2.6
2.9
3.2
3.5
3.8

5
5
5
5
5

100
100
100
95
90

1000
1000
1000
1000
1000

1.0
1.0
1.0
1.0
1.0

50
20
10
5
5

1.0
1.0
1.0
1.0
1.0

3.5
3.5
3.5
3.5
3.5

0
0
0
0
0

450
450
450
450
450

3.7
4.0
4.4
4.8
5.2

3.9
4.3
4.7
5.1
5.6

4.1
4.6
5.0
5.4
6.0

5
5
5
5
5

90
90
80
60
40

1000
1000
800
500
200

1.0
1.0
1.0
1.0
1.0

3
3
3
2
1

1.0
1.0
2.0
2.0
2.0

3.5
3.5
3.5
2.7
2.0

2.5
0
0.2
1.2
2.5

450
450
260
225
200

0E
0F
0G
0H
0K

5.8
6.4
7.0
7.7
8.5

6.2
6.8
7.5
8.2
9.1

6.6
7.2
7.9
8.7
9.6

5
5
5
5
5

10
15
15
15
15

100
160
160
160
160

1.0
1.0
1.0
1.0
1.0

3
2
1
0.7
0.2

4.0
4.0
5.0
5.0
7.0

0.4
1.2
2.5
3.2
3.8

3.7
4.5
5.3
6.2
7.0

185
155
140
135
130

MM5Z10VT1
MM5Z11VT1
MM5Z12VT1
MM5Z13VT1
MM5Z15VT1

0L
0M
0N
0P
0T

9.4
10.4
11.4
12.4
14.3

10
11
12
13.25
15

10.6
11.6
12.7
14.1
15.8

5
5
5
5
5

20
20
25
30
30

160
160
80
80
80

1.0
1.0
1.0
1.0
1.0

0.1
0.1
0.1
0.1
0.05

8.0
8.0
8.0
8.0
10.5

4.5
5.4
6.0
7.0
9.2

8.0
9.0
10
11
13

130
130
130
120
110

MM5Z16VT1
MM5Z18VT1
MM5Z20VT1
MM5Z22VT1
MM5Z24VT1

0U
0W
0Z
10
11

15.3
16.8
18.8
20.8
22.8

16.2
18
20
22
24.2

17.1
19.1
21.2
23.3
25.6

2
2
2
2
2

40
45
55
55
70

80
80
100
100
120

1.0
1.0
1.0
1.0
1.0

0.05
0.05
0.05
0.05
0.05

11.2
12.6
14.0
15.4
16.8

10.4
12.4
14.4
16.4
18.4

14
16
18
20
22

105
100
85
85
80

MM5Z27VT1
MM5Z30VT1
MM5Z33VT1
MM5Z36VT1
MM5Z39VT1

12
14
18
19
20

25.1
28
31
34
37

27
30
33
36
39

28.9
32
35
38
41

2
2
2
2
2

80
80
80
90
130

300
300
300
500
500

1.0
1.0
1.0
1.0
1.0

0.05
0.05
0.05
0.05
0.05

18.9
21.0
23.2
25.2
27.3

21.4
24.4
27.4
30.4
33.4

25.3
29.4
33.4
37.4
41.2

70
70
70
70
45

MM5Z43VT1
MM5Z47VT1
MM5Z51VT1
MM5Z56VT1
MM5Z62VT1

21
1A
1C
1D
1E

40
44
48
52
58

43
47
51
56
62

46
50
54
60
66

1
1
1
1
1

150
170
180
200
215

500
500
500
500
500

1.0
1.0
1.0
1.0
1.0

0.05
0.05
0.05
0.05
0.05

30.1
32.9
35.7
39.2
43.4

37.6
42.0
46.6
52.2
58.8

46.6
51.8
57.2
63.8
71.6

40
40
40
40
35

MM5Z68VT1
MM5Z75VT1

1F
1G

64
70

68
75

72
79

1
1

240
255

500
500

1.0
1.0

0.05
0.05

47.6
52.5

65.6
73.4

79.8
88.6

35
35

VZ (Volts)

Device

Device
Marking

Min

Nom

MM5Z2V4T1
MM5Z2V7T1
MM5Z3V0T1
MM5Z3V3T1
MM5Z3V6T1

00
01
02
05
06

2.2
2.5
2.8
3.1
3.4

MM5Z3V9T1
MM5Z4V3T1
MM5Z4V7T1
MM5Z5V1T1
MM5Z5V6T1

07
08
09
0A
0C

MM5Z6V2T1
MM5Z6V8T1
MM5Z7V5T1
MM5Z8V2T1
MM5Z9V1T1

ZZK @ IZK

IR @ VR

1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.

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166

!(8
0
!+,8

Preferred Devices

$     
  
  
 
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SOT23 Dual Common Cathode Zeners


for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
The MMBZ27VCLT1 can be used to protect a single wire
communication network form EMI and ESD transient surge voltages.
T h e M M B Z 2 7 V C LT 1 i s r e c o m m e n d e d b y t h e
Society of Automotive Engineers (SAE), February 2000, J2411
Single Wire Can Network for Vehicle Applications specification as
a solution for transient voltage problems.

1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE

MARKING DIAGRAM
3
1

xxxM

2
SOT23
CASE 318
STYLE 9

Specification Features:

SOT23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration


Working Peak Reverse Voltage Range 12.8 V, 22 V
Standard Zener Breakdown Voltage Range 15 V, 27 V
Peak Power 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Low Leakage < 100 nA
Flammability Rating: UL 94 VO
PbFree Packages are Available

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

xxx
M

= 15D or 27C
= Date Code

ORDERING INFORMATION
Device
MMBZ15VDLT1

Package

Shipping

SOT23

3000/Tape & Reel

MMBZ15VDLT1G SOT23
(PbFree)
MMBZ15VDLT3

SOT23

3000/Tape & Reel


10,000/Tape & Reel

MMBZ15VDLT3G SOT23 10,000/Tape & Reel


(PbFree)
MMBZ27VCLT1

SOT23

MMBZ27VCLT1G SOT23
(PbFree)
MMBZ27VCLT3

SOT23

3000/Tape & Reel


3000/Tape & Reel
10,000/Tape & Reel

MMBZ27VCLT3G SOT23 10,000/Tape & Reel


(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use


and best overall value.
Semiconductor Components Industries, LLC, 2004

Setember, 2004 Rev. 6

167

Publication Order Number:


MMBZ15VDLT1/D

MMBZ15VDLT1, MMBZ27VCLT1
MAXIMUM RATINGS
Symbol

Value

Unit

Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C

Rating

Ppk

40

Watts

Total Power Dissipation on FR5 Board (Note 2) @ TA = 25C


Derate above 25C

PD

225
1.8

mW
mW/C

Thermal Resistance JunctiontoAmbient

RqJA

556

C/W

Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C


Derate above 25C

PD

300
2.4

mW
mW/C

Thermal Resistance JunctiontoAmbient

RqJA

417

C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

TL

260

Lead Solder Temperature Maximum (10 Second Duration)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
VBR

IF

VC VBR VRWM

IR VF
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current

IPP

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage

Device
MMBZ15VDLT1

VBR (Note 4) (V)

VC @ IPP (Note 5)
@ IT

VC

IPP

Device
Marking

VRWM
Volts

IR @ VRWM
nA

Min

Nom

Max

mA

VBR
mV/5C

15D

12.8

100

14.3

15

15.8

1.0

21.2

1.9

12

(VF = 1.1 V Max @ IF = 200 mA)


Breakdown Voltage

Device
MMBZ27VCLT1

VBR (Note 4) (V)

VC @ IPP (Note 5)
@ IT

VC

IPP

Device
Marking

VRWM
Volts

IR @ VRWM
nA

Min

Nom

Max

mA

VBR
mV/5C

27C

22

50

25.65

27

28.35

1.0

38

1.0

26

4. VBR measured at pulse test current IT at an ambient temperature of 25C.


5. Surge current waveform per Figure 5 and derate per Figure 6

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168

MMBZ15VDLT1, MMBZ27VCLT1
TYPICAL CHARACTERISTICS
MMBZ15VDLT1

MMBZ27VCLT1
4 &/+%!# &)!#
 !4 0 

4 &/+%!# &)!#
 !4 0 

3
4+  &#






"+  &#

.G

HG

HG
HG2
  & "  

;
4+  &#
2

3




.G

Figure 1. Typical Breakdown Voltage


versus Temperature

Figure 2. Typical Breakdown Voltage


versus Temperature





+ * % +

 & %



 &





,
,
.G

HG
HG2
  & "  

&#" &
"4
& 







HG

' . 4& +

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5

- '  ,

&/ !&#"6I6

!&#"-



(&#' !&#"6I









*   





3


  & "  



3

Figure 4. Steady State Power Derating Curve

&/ "#
+ & )-' &/ %
 "  0 & 1 

Figure 3. Typical Leakage Current


versus Temperature

  m

HG

HG
HG2
  & "  


;
2
3








Figure 5. Pulse Waveform




3



&* & 4   & "  

Figure 6. Pulse Derating Curve


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169

3



MMBZ15VDLT1, MMBZ27VCLT1
TYPICAL APPLICATIONS

VBatt

ECU Connector

Single Wire
CAN Transceiver
47 mH

Bus
Loss of
Ground
Protection
Circuit

RLoad
9.09 kW 1%
*
CLoad
220 pF 10%

Load
GND

*ESD Protection MMBZ27VCLT1 or equivalent. May be


located in each ECU (CLoad needs to be reduced accordingly)
or at a central point near the DLC.

Figure 7. Single Wire CAN Network

Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 Single Wire CAN Network for Vehicle Applications specification
(Figure 6, page 11).

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170

!++!8
   
Preferred Device

    % 
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

http://onsemi.com

Features
3
Cathode

PbFree Packages are Available


225 mW Rating on FR4 or FR5 Board
Zener Voltage Range 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model

1
Anode

MARKING
DIAGRAM
3

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

1
2

SOT23
CASE 318
STYLE 8

xxx

xxx = Specific Device Code


M = Date Code

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

ORDERING INFORMATION
MAXIMUM RATINGS

Device**

Rating

Symbol

Total Power Dissipation on FR5 Board,


(Note 1) @ TA = 25C
Derated above 25C

PD

Thermal Resistance,
JunctiontoAmbient
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25C
Derated above 25C

RqJA

Max

Unit

225
1.8

mW
mW/C

556

C/W

300
2.4

mW
mW/C

RqJA

417

C/W

Junction and Storage


Temperature Range

TJ, Tstg

65 to +150

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

August, 2004 Rev. 5

MMBZ52xxBLT1G

MMBZ52xxBLT3
MMBZ52xxBLT3G

PD

Thermal Resistance,
JunctiontoAmbient

Semiconductor Components Industries, LLC, 2004

MMBZ52xxBLT1

171

Package

Shipping

SOT23

3000/Tape & Reel

SOT23
(PbFree)

3000/Tape & Reel

SOT23

10,000/Tape & Reel

SOT23 10,000/Tape & Reel


(PbFree)

**The T1 suffix refers to an 8 mm, 7 inch reel.


The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 173 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Publication Order Number:


MMBZ5221BLT1/D

MMBZ5221BLT1 Series
ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C


unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

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172

MMBZ5221BLT1 Series
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 3)
VZ (Volts)

Zener Impedance
@ IZT

ZZT @ IZT

Leakage Current

ZZK @ IZK

IR @ VR

Device
Marking

Min

Nom

Max

mA

mA

mA

Volts

MMBZ5221BL
MMBZ5222BL
MMBZ5223BL
MMBZ5224BL
MMBZ5225BL

18A
18B
18C
18D
18E

2.28
2.37
2.56
2.66
2.85

2.4
2.5
2.7
2.8
3

2.52
2.63
2.84
2.94
3.15

20
20
20
20
20

30
30
30
30
29

1200
1250
1300
1400
1600

0.25
0.25
0.25
0.25
0.25

100
100
75
75
50

1
1
1
1
1

MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL

8A
8B
8C
8D
8E

3.13
3.42
3.70
4.08
4.46

3.3
3.6
3.9
4.3
4.7

3.47
3.78
4.10
4.52
4.94

20
20
20
20
20

28
24
23
22
19

1600
1700
1900
2000
1900

0.25
0.25
0.25
0.25
0.25

25
15
10
5
5

1
1
1
1
2

MMBZ5231BL
MMBZ5232BL
MMBZ5233BL
MMBZ5234BL
MMBZ5235BL

8F
8G
8H
8J
8K

4.84
5.32
5.70
5.89
6.46

5.1
5.6
6
6.2
6.8

5.36
5.88
6.30
6.51
7.14

20
20
20
20
20

17
11
7
7
5

1600
1600
1600
1000
750

0.25
0.25
0.25
0.25
0.25

5
5
5
5
3

2
3
3.5
4
5

MMBZ5236BL
MMBZ5237BL
MMBZ5238BL
MMBZ5239BL
MMBZ5240BL

8L
8M
8N
8P
8Q

7.12
7.79
8.26
8.64
9.50

7.5
8.2
8.7
9.1
10

7.88
8.61
9.14
9.56
10.50

20
20
20
20
20

6
8
8
10
17

500
500
600
600
600

0.25
0.25
0.25
0.25
0.25

3
3
3
3
3

6
6.5
6.5
7
8

MMBZ5241BL
MMBZ5242BL
MMBZ5243BL
MMBZ5244BL
MMBZ5245BL

8R
8S
8T
8U
8V

10.4
11.40
12.35
13.30
14.25

11
12
13
14
15

11.55
12.60
13.65
14.70
15.75

20
20
9.5
9
8.5

22
30
13
15
16

600
600
600
600
600

0.25
0.25
0.25
0.25
0.25

2
1
0.5
0.1
0.1

8.4
9.1
9.9
10
11

MMBZ5246BL
MMBZ5247BL
MMBZ5248BL
MMBZ5249BL
MMBZ5250BL

8W
8X
8Y
8Z
81A

15.20
16.15
17.10
18.05
19.00

16
17
18
19
20

16.80
17.85
18.90
19.95
21.00

7.8
7.4
7
6.6
6.2

17
19
21
23
25

600
600
600
600
600

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

12
13
14
14
15

MMBZ5251BL
MMBZ5252BL
MMBZ5253BL
MMBZ5254BL
MMBZ5255BL

81B
81C
81D
81E
81F

20.90
22.80
23.75
25.65
26.60

22
24
25
27
28

23.10
25.20
26.25
28.35
29.40

5.6
5.2
5
4.6
4.5

29
33
35
41
44

600
600
600
600
600

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

17
18
19
21
21

MMBZ5256BL
MMBZ5257BL
MMBZ5258BL
MMBZ5259BL
MMBZ5260BL

81G
81H
81J
81K
81L

28.50
31.35
34.20
37.05
40.85

30
33
36
39
43

31.50
34.65
37.80
40.95
45.15

4.2
3.8
3.4
3.2
3

49
58
70
80
93

600
700
700
800
900

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

23
25
27
30
33

MMBZ5261BL
MMBZ5262BL
MMBZ5263BL
MMBZ5264BL
MMBZ5265BL

81M
81N
81P
81Q
81R

44.65
48.45
53.20
57.00
58.90

47
51
56
60
62

49.35
53.55
58.80
63.00
65.10

2.7
2.5
2.2
2.1
2

105
125
150
170
185

1000
1100
1300
1400
1400

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

36
39
43
46
47

MMBZ5266BL
MMBZ5267BL
MMBZ5268BL
MMBZ5269BL
MMBZ5270BL

81S
81T
81U
81V
81W

64.60
71.25
77.90
82.65
86.45

68
75
82
87
91

71.40
78.75
86.10
91.35
95.55

1.8
1.7
1.5
1.4
1.4

230
270
330
370
400

1600
1700
2000
2200
2300

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

52
56
62
68
69

Device

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C
NOTE: MMBZ5233BLT1, MMBZ5246BLT1, MMBZ5251BLT1, and MMBZ5252BLT1 Not Available in 10,000/Tape & Reel.

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173

MMBZ5221BLT1 Series



!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES





!7 0 7





.
.G
.G




3
2
;

VZ, NOMINAL ZENER VOLTAGE (V)





TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
!7 0 7





VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)


7 1  &



TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

7 7 *+5&  +& 





 &
 &



75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)


VZ, NOMINAL ZENER VOLTAGE






,



Figure 3. Effect of Zener Voltage on


Zener Impedance

,

3





,
,3
,2
,;
,
VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

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174

,

,

MMBZ5221BLT1 Series
TYPICAL CHARACTERISTICS




*& & &A'

 ! 4&

 ! 4&

 *#&/&)"  &

& 1 


BIAS AT
50% OF VZ NOM





VZ, NOMINAL ZENER VOLTAGE (V)




+150C

,
,

,

+ 25C

,

55C

,



Figure 5. Typical Capacitance



& 1 



,

,



2
VZ, ZENER VOLTAGE (V)

2

Figure 6. Typical Leakage Current

 7 *7 "  &

 7 *7 "  &








3
VZ, NOMINAL ZENER VOLTAGE (V)





& 1 



,

,






3
VZ, ZENER VOLTAGE (V)

;

Figure 8. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 7. Zener Voltage versus Zener Current


(VZ Up to 12 V)

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175

;

!++/8
   
    % 
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:

http://onsemi.com

3
Cathode

225 mW Rating on FR4 or FR5 Board


Zener Voltage Range 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 x 20 ms)

3
1
2
SOT23
CASE 318
STYLE 8

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

MARKING DIAGRAM

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

xxx M

MAXIMUM RATINGS
Rating

Symbol

Max

Unit

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C

Ppk

225

Total Power Dissipation on FR5 Board,


(Note 2) @ TA = 25C
Derated above 25C

PD

Thermal Resistance
JunctiontoAmbient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25C
Derated above 25C

RqJA

225
1.8

mW
mW/C

Device

Package

Shipping

556

C/W

MMBZ52xxELT1

SOT23

3000/Tape & Reel

MMBZ52xxELT3*

SOT23

10,000/Tape & Reel

PD
300
2.4

mW
mW/C

RqJA

417

C/W

Junction and Storage


Temperature Range

TJ, Tstg

65 to
+150

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*MMBZ5246ELT1, and MMBZ5252ELT1
Not Available in 10,000/Tape & Reel.

DEVICE MARKING INFORMATION

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

June, 2004 Rev. 3

xxx = Specific Device Code


M = Date Code

ORDERING INFORMATION

Thermal Resistance
JunctiontoAmbient

Semiconductor Components Industries, LLC, 2004

1
Anode

176

See specific marking information in the device marking


column of the Electrical Characteristics table on page 177 of
this data sheet.

Publication Order Number:


MMBZ5221ELT1/D

MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C


unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

VZ VR

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 5)
VZ (V)

Zener Impedance
@ IZT

ZZT @ IZT

Leakage Current

ZZK @ IZK

IR @ VR

Device

Device
Marking

Min

Nom

Max

mA

mA

mA

MMBZ5221ELT1

BE2

2.28

2.4

2.52

20

30

1200

0.25

100

MMBZ5226ELT1

BE7

3.13

3.3

3.47

20

28

1600

0.25

25

MMBZ5228ELT1

BE9

3.70

3.9

4.10

20

23

1900

0.25

10

MMBZ5229ELT1

BF1

4.08

4.3

4.52

20

22

2000

0.25

MMBZ5230ELT1

BF2

4.46

4.7

4.94

20

19

1900

0.25

MMBZ5231ELT1

BF3

4.84

5.1

5.36

20

17

1600

0.25

MMBZ5232ELT1

BF4

5.32

5.6

5.88

20

11

1600

0.25

MMBZ5234ELT1

BF6

5.89

6.2

6.51

20

1000

0.25

MMBZ5235ELT1

BF7

6.46

6.8

7.14

20

750

0.25

MMBZ5236ELT1

BF8

7.12

7.5

7.88

20

500

0.25

MMBZ5237ELT1

BF9

7.79

8.2

8.61

20

500

0.25

6.5

MMBZ5239ELT1

BG2

8.65

9.1

9.55

20

10

600

0.25

MMBZ5240ELT1

BG3

9.50

10

10.50

20

17

600

0.25

MMBZ5242ELT1

BG5

11.40

12

12.60

20

30

600

0.25

9.1

MMBZ5243ELT1

BG6

12.35

13

13.65

9.5

13

600

0.25

0.5

9.9

MMBZ5244ELT1

BG7

13.30

14

14.70

15

600

0.25

0.1

10

MMBZ5245ELT1

BG8

14.25

15

15.75

8.5

16

600

0.25

0.1

11

MMBZ5246ELT1*

BG9

15.20

16

16.80

7.8

17

600

0.25

0.1

12

MMBZ5248ELT1

BH2

17.10

18

18.90

21

600

0.25

0.1

14

MMBZ5250ELT1

BH4

19.00

20

21.00

6.2

25

600

0.25

0.1

15

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
*Not Available in the 10,0000/Tape & Reel.

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177

MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 5)
VZ (V)

Zener Impedance
@ IZT

ZZT @ IZT

Leakage Current

ZZK @ IZK

IR @ VR

Device

Device
Marking

Min

Nom

Max

mA

mA

mA

MMBZ5252ELT1*

BH6

22.80

24

25.20

5.2

33

600

0.25

0.1

18

MMBZ5253ELT1

BH7

23.75

25

26.25

35

600

0.25

0.1

19

MMBZ5254ELT1

BH8

25.65

27

28.35

4.6

41

600

0.25

0.1

21

MMBZ5255ELT1

BH9

26.60

28

29.40

4.5

44

600

0.25

0.1

21

MMBZ5256ELT1

BJ1

28.50

30

31.50

4.2

49

600

0.25

0.1

23

MMBZ5257ELT1

BJ2

31.35

33

34.65

3.8

58

700

0.25

0.1

25

MMBZ5258ELT1

BJ3

34.20

36

37.80

3.4

70

700

0.25

0.1

27

MMBZ5262ELT1

BJ7

48.45

51

53.55

2.5

125

1100

0.25

0.1

37

MMBZ5263ELT1

BJ8

53.20

56

58.80

2.2

150

1300

0.25

0.1

43

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
*Not Available in the 10,0000/Tape & Reel.

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178

MMBZ5221ELT1 Series

100

!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES

6
5
4

!7 0 7

TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
!7 0 7

10

2
1
0

2
3
2

4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)

11

12

10

100
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1000
7 1  &

TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

7 7 *+5&  +& 

1000

100

75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)

100

 &
 &
10

10


1

10
VZ, NOMINAL ZENER VOLTAGE

100

1
0.4

Figure 3. Effect of Zener Voltage on


Zener Impedance

0.5

3 



0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

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179

1.1

1.2

MMBZ5221ELT1 Series
TYPICAL CHARACTERISTICS
1000

1000

*& & &A'

 ! 4&

 ! 4&

 *#&/&)"  m &

& 1 

100
BIAS AT
50% OF VZ NOM

100
10
1
H

0.1

0.01

10

HG 

0.00
1
0.0001
1

.G 

0.00001
0
100

10
VZ, NOMINAL ZENER VOLTAGE (V)

10

Figure 5. Typical Capacitance

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current


100

100

& 1 
 7 *7 "  &

10

10

0.1

0.1

4
6
8
VZ, ZENER VOLTAGE (V)

0.01

12

10

10

100

50
70
VZ, ZENER VOLTAGE (V)

PEAK VALUE IRSM @ 8 ms

tr

90

30

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10
0

20

90

Figure 8. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 7. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% OF PEAK PULSE CURRENT

 7 *7 "  &

& 1 

0.01

80

40

60

t, TIME (ms)

Figure 9. 8 20 ms Pulse Waveform

http://onsemi.com
180

80

90

! 8
   
Preferred Device

+$ 6 $     


  
  
 
SOT23 Dual Common Anode Zeners
for ESD Protection

http://onsemi.com

These dual monolithic silicon Zener diodes are designed for


applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.

1
3
2

Features

PbFree Packages are Available


SOT23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration


Working Peak Reverse Voltage Range 3 V to 26 V
Standard Zener Breakdown Voltage Range 5.6 V to 33 V
Peak Power 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 VO

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

SOT23
CASE 318
STYLE 12

xxx

MARKING
DIAGRAM

2
xxx
M

= Device Code
= Date Code

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 182 of this data sheet.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the table on page 183 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

260C for 10 Seconds


Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the T1 with T3 in the Device Number to order the
13 inch/10,000 unit reel.

Semiconductor Components Industries, LLC, 2004

August, 2004 Rev. 7

181

Publication Order Number:


MMBZ5V6ALT1/D

MMBZ5V6ALT1 Series
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Ppk

24
40

Watts

Total Power Dissipation on FR5 Board (Note 2) @ TA = 25C


Derate above 25C

PD

225
1.8

mW
mW/C

Thermal Resistance JunctiontoAmbient

RqJA

556

C/W

Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C


Derate above 25C

PD

300
2.4

mW
mW/C

Thermal Resistance JunctiontoAmbient

RqJA

417

C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

TL

260

Peak Power Dissipation @ 1.0 ms (Note 1)


@ TL 25C

MMBZ5V6ALT1 thru MMBZ10VALT1


MMBZ12VALT1 thru MMBZ33VALT1

Lead Solder Temperature Maximum (10 Second Duration)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.

ORDERING INFORMATION
Device
MMBZ5V6ALT1
MMBZ5V6ALT1G
MMBZ5V6ALT3
MMBZ5V6ALT3G
MMBZ6VxALT1
MMBZ6VxALT1G
MMBZ6VxALT3
MMBZ6VxALT3G
MMBZ9V1ALT1
MMBZ9V1ALT1G
MMBZ9V1ALT3
MMBZ9V1ALT13G
MMBZxxVALT1
MMBZxxVALT1G
MMBZxxVALT3
MMBZxxVALT3G

Package

Shipping

SOT23

3000 Tape & Reel

SOT23
(PbFree)

3000 Tape & Reel

SOT23

10,000 Tape & Reel

SOT23
(PbFree)

10,000 Tape & Reel

SOT23

3000 Tape & Reel

SOT23
(PbFree)

3000 Tape & Reel

SOT23

10,000 Tape & Reel

SOT23
(PbFree)

10,000 Tape & Reel

SOT23

3000 Tape & Reel

SOT23
(PbFree)

3000 Tape & Reel

SOT23

10,000 Tape & Reel

SOT23
(PbFree)

10,000 Tape & Reel

SOT23

3000 Tape & Reel

SOT23
(PbFree)

3000 Tape & Reel

SOT23

10,000 Tape & Reel

SOT23
(PbFree)

10,000 Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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182

MMBZ5V6ALT1 Series
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter

Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

VC VBR VRWM

IR VF
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current

IPP

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Breakdown Voltage
IR @
VRWM

Max Zener
Impedance (Note 5)

VC @ IPP
(Note 6)

ZZT
@ IZT

VC

Device

Device
Marking

VRWM
Volts

mA

Min

Nom

Max

mA

mA

QVBR
mV/5C

MMBZ5V6AL

5A6

3.0

5.0

5.32

5.6

5.88

20

11

1600

0.25

8.0

3.0

1.26

MMBZ6V2AL

6A2

3.0

0.5

5.89

6.2

6.51

1.0

8.7

2.76

2.80

MMBZ6V8AL

6A8

4.5

0.5

6.46

6.8

7.14

1.0

9.6

2.5

3.4

MMBZ9V1AL

9A1

6.0

0.3

8.65

9.1

9.56

1.0

14

1.7

7.5

MMBZ10VAL

10A

6.5

0.3

9.50

10

10.5

1.0

14.2

1.7

7.5

VBR (Note 4) (V)

@ IT

ZZK @ IZK

IPP

40 WATTS

(VF = 0.9 V Max @ IF = 10 mA)


IR @
VRWM

Breakdown Voltage

QVBR
mV/5C

@ IT

VC

IPP

Min

Nom

Max

mA

200

11.40

12

12.60

1.0

17

2.35

7.5

50

14.25

15

15.75

1.0

21

1.9

12.3

14.5

50

17.10

18

18.90

1.0

25

1.6

15.3

17

50

19.00

20

21.00

1.0

28

1.4

17.2

27A

22

50

25.65

27

28.35

1.0

40

1.0

24.3

33A

26

50

31.35

33

34.65

1.0

46

0.87

30.4

Device

Device
Marking

VRWM
Volts

MMBZ12VAL

12A

8.5

MMBZ15VAL

15A

12

MMBZ18VAL

18A

MMBZ20VAL

20A

MMBZ27VAL
MMBZ33VAL

nA

VBR (Note 4) (V)

VC @ IPP (Note 6)

4. VBR measured at pulse test current IT at an ambient temperature of 25C.


5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6

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183

MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS
1000

15

100

12
10

IR (nA)

BREAKDOWN VOLTAGE (VOLTS)


(VBR @ IT)

18

1
6
0.1

3
0
40

+ 50
+ 100
TEMPERATURE (C)

+ 150

0.01
40

Figure 1. Typical Breakdown Voltage


versus Temperature

+ 85
+ 25
TEMPERATURE (C)

+ 125

Figure 2. Typical Leakage Current


versus Temperature

(Upper curve for each voltage is bidirectional mode,


lower curve is unidirectional mode)

320
PD, POWER DISSIPATION (mW)

300

C, CAPACITANCE (pF)

280
240
200
5.6 V

160
120

15 V
80
40

250
ALUMINA SUBSTRATE
200
150
100
FR5 BOARD
50
0

0
0

BIAS (V)

Figure 3. Typical Capacitance versus Bias Voltage

25

50

75
100
125
TEMPERATURE (C)

150

175

Figure 4. Steady State Power Derating Curve

(Upper curve for each voltage is unidirectional mode,


lower curve is bidirectional mode)

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184

MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS

tr 10 ms

VALUE (%)

100

PEAK VALUE IPP


IPP
HALF VALUE
2
50
tP
0

3
t, TIME (ms)

PEAK PULSE DERATING IN % OF PEAK


POWER OR CURRENT @ TA = 25C

100

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.

90
80
70
60
50
40
30
20
10
0
0

25

Figure 5. Pulse Waveform

50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (C)

Figure 6. Pulse Derating Curve

MMBZ5V6ALT1

MMBZ5V6ALT1
100

RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL

RECTANGULAR
WAVEFORM, TA = 25C

Ppk, PEAK SURGE POWER (W)

Ppk, PEAK SURGE POWER (W)

100

10

200

BIDIRECTIONAL

10

UNIDIRECTIONAL

UNIDIRECTIONAL

1
0.1

10

100

1000

0.1

10

100

PW, PULSE WIDTH (ms)

PW, PULSE WIDTH (ms)

Figure 7. Maximum Nonrepetitive Surge


Power, Ppk versus PW

Figure 8. Maximum Nonrepetitive Surge


Power, Ppk(NOM) versus PW

Power is defined as VRSM x IZ(pk) where VRSM is


the clamping voltage at IZ(pk).

Power is defined as VZ(NOM) x IZ(pk) where


VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.

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185

1000

MMBZ5V6ALT1 Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples


of TVS applications are illustrated below.

Computer Interface Protection

A
KEYBOARD
TERMINAL
PRINTER
ETC.

B
C

I/O

FUNCTIONAL
DECODER

GND
MMBZ5V6ALT1
THRU
MMBZ33VALT1

Microprocessor Protection
VDD
VGG
ADDRESS BUS

RAM

ROM

DATA BUS
CPU

I/O

CLOCK

MMBZ5V6ALT1
THRU
MMBZ33VALT1

CONTROL BUS

GND
MMBZ5V6ALT1
THRU
MMBZ33VALT1

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186

; 
   
+$        

  
 
SC59 Quad Common Anode for Zeners
ESD Protection

http://onsemi.com

These quad monolithic silicon voltage suppressors are designed for


applications requiring transient voltage protection capability. They are
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems, medical
equipment, and other applications. Their quad junction common anode
design protects four separate lines using only one package. These devices
are ideal for situations where board space is at a premium.




Specification Features:

PIN ASSIGNMENT

SC59 Package Allows Four Separate Unidirectional Configurations


Working Peak Reverse Voltage Range 3.0 V to 2.5 V
Standard Zener Breakdown Voltage Range 5.6 V to 33 V
Peak Power Minimum 24 W @ 1 ms (Unidirectional), per Figure 5
Peak Power Minimum 150 W @ 20 ms (Unidirectional), per Figure 6
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Low Leakage < 2.0 mA

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

SC59
CASE 318F
STYLE 1

 ,
,
,
,
,
,

& (+
&+
& (+
& (+
&+
& (+

MARKING DIAGRAM

DEVM

DEV = Device Code


= (See Table Next Page)
M
= Date Code

260C for 10 Seconds


MAXIMUM RATINGS
Rating

ORDERING INFORMATION
Symbol

Value

Unit

Peak Power Dissipation (Note 1)


@ 1.0 ms @ TL 25C

PPK

24

Peak Power Dissipation (Note 2)


@ 20 ms @ TL 25C

PPK

150

PD

225
1.8
556

mW
mW/C
C/W

300
2.4
417

mW
mW/C
C/W

55 to
+150

Total Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance Junction to Ambient
Total Power Dissipation (Note 4) @ TA = 25C
Derate Above 25C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range

RqJA
PD
RqJA
TJ, Tstg

Device {

Package

Shipping

MMQAxxxT1

SC59

3000/Tape & Reel

MMQAxxxT3*

SC59

10,000/Tape & Reel

*MMQA13VT3 Not Available in 10,000/Tape & Reel


The T1 suffix refers to an 8 mm, 7 inch reel.
The T3 suffix refers to an 8 mm, 13 inch reel.

1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per
Figure 4
2. Nonrepetitive current pulse per Figure 6 and derated above TA = 25C per
Figure 4
3. FR5 board = 1.0 X 0.75 X 0.62 in.
4. Alumina substrate = 0.4 X 0.3 X 0.024 in., 99.5% alumina
Semiconductor Components Industries, LLC, 2002

July, 2002 Rev. 6

187

Publication Order Number:


MMQA5V6T1/D

MMQA5V6T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.9 V Max. @ IF (Note 5) = 10 mA)

IF

Unidirectional (Circuit tied to Pins 1, 2 and 5; Pins 2, 3 and


5; or 2, 4 and 6; or Pins 2, 5 and 6)
Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR

VC VBR VRWM

IR VF
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM

ZZT

Maximum Zener Impedance @ IZT

VBR

Breakdown Voltage @ IT

IT

IPP

Test Current

QVBR

UniDirectional TVS

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ELECTRICAL CHARACTERISTICS
Breakdown Voltage

VRWM

VC

IPP

QVBR

Volts

nA

Min

Nom

Max

mA

mA

Volts

Amps

mW/5C

VBR (Note 5) (Volts)

@ IT

ZZT (Note 6)
@ IZT

VC @ IPP (Note 7)

IR @
VRWM

Device

Device
Marking

MMQA5V6T1
MMQA6V2T1,T3
MMQA6V8T1
MMQA12VT1

5A6
6A2
6A8
12A

3.0
4.0
4.3
9.1

2000
700
500
75

5.32
5.89
6.46
11.4

5.6
6.2
6.8
12

5.88
6.51
7.14
12.6

1.0
1.0
1.0
1.0

400
300
300
80

1.0
1.0
1.0
1.0

8.0
9.0
9.8
17.3

3.0
2.66
2.45
1.39

1.26
10.6
10.9
14

MMQA13VT1,T3
MMQA15VT1
MMQA18VT1
MMQA20VT1,T3*

13A
15A
18A
20A

9.8
11
14
15

75
75
75
75

12.35
14.25
17.1
19.0

13
15
18
20

13.65
15.75
18.9
21.0

1.0
1.0
1.0
1.0

80
80
80
80

1.0
1.0
1.0
1.0

18.6
21.7
26
28.6

1.29
1.1
0.923
0.84

15
16
19
20.1

MMQA21VT1
MMQA22VT1
MMQA24VT1
MMQA27VT1

21A
22A
24A
27A

16
17
18
21

75
75
75
75

19.95
20.9
22.8
25.65

21
22
24
27

22.05
23.1
25.2
28.35

1.0
1.0
1.0
1.0

80
80
100
125

1.0
1.0
1.0
1.0

30.3
31.7
34.6
39.0

0.792
0.758
0.694
0.615

21
22
25
28

MMQA30VT1
MMQA33VT1

30A
33A

23
25

75
75

28.5
31.35

30
33

31.5
34.65

1.0
1.0

150
200

1.0
1.0

43.3
48.6

0.554
0.504

32
37

5. VBR measured at pulse test current IT at an ambient temperature of 25C


6. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(ac) = 0.1 IZ(dc)
with the AC frequency = 1.0 kHz
7. Surge current waveform per Figure 5 and derate per Figure 4
*Not Available in the 10,000/Tape & Reel.

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188

MMQA5V6T1 Series
TYPICAL CHARACTERISTICS


*
4&
+ &  !
4&
+ &  !
4&
+ & ' !7 



*
 *#&/&)&

*& & &A'






H



H


.



,

,2



3
!7*  &# 7 !# &) !



,

,2

Figure 1. Typical Capacitance

&/ "#
+ & )-' &/ %
 "  0 & 1 

+ * % +

 & %

&#" &
"4
& 





' 9 4& +








3





3



Figure 2. Typical Leakage Current






!7*  &# 7 !# &) !



3


;
2
3












3







&* & 4   & "  

&* & 4   & "  

Figure 3. Steady State Power Derating Curve

Figure 4. Pulse Derating Curve

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189

3



MMQA5V6T1 Series
TYPICAL CHARACTERISTICS

&/ !&#"6I6

!&#"-





(&#' !&#"6I






;
-' &/ "#
" 





"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5
 ' 
,
  m

&/ !&#" 
0 2 m
"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

2
3


(&#' !&#" 
: 0  m












*   

Figure 5. 10 1000 ms Pulse Waveform

2

Figure 6. 8 20 ms Pulse Waveform



 &)"#&
%&!' * & 1 

2
/ * &/
" ) % %

A? &/
" ) % %





*   m


"+  &#



2  %&!' &
 ')"  




2
  %&!' &
 ')"  





,
,

,







,

%* "#
 %+ ( 

,2





3

 &# !7

Figure 7. Maximum NonRepetitive Surge


Power, Ppk versus PW

Figure 8. Typical Maximum NonRepetitive


Surge Power, Ppk versus VBR

Power is defined as VRSM x IZ(pk) where VRSM


is the clamping voltage at IZ(pk).

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190



MMQA5V6T1 Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SC-74
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially

when board space is at a premium. A simplified example of


MMQA Series Device applications is illustrated below.

Computer Interface Protection

&
/54& +
 &#
 
 ,

4


:

'" &#
++

)+
>&
 
+!

Microprocessor Protection
!++
!))
&++ 

4"

&

+& & 4"

:

 "
#/

 # 4"

)+
>&
 
+!

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191

MMQA5V6T1 Series
INFORMATION FOR USING THE SC-59 6 LEAD SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection

interface between the board and the package. With the


correct pad geometry, the packages will self-align when
subjected to a solder reflow process.
,;
,

,3
,;
,3
,;
,3
,;
,2
,3
,;
,




SC-59 6 LEAD
SC-59 6 LEAD POWER DISSIPATION
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.

The power dissipation of the SC-59 6 Lead is a function


of the pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RqJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SC-59 6 Lead package, PD can be calculated as
follows:
PD =

PD =

150C 25C
556C/W

= 225 milliwatts

The 556C/W for the SC-59 6 Lead package assumes the


use of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SC-59 6 Lead package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

TJ(max) TA
RqJA

The values for the equation are found in the maximum


ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25C,

SOLDER STENCIL GUIDELINES


SC-59, SC-59 6 Lead, SC-70/SOT-323, SOD-123, SOT-23,
SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC
diode packages, the stencil opening should be the same as
the pad size or a 1:1 registration.

Prior to placing surface mount components onto a printed


circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the

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192

MMQA5V6T1 Series
SOLDERING PRECAUTIONS
The soldering temperature and time should not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.

The melting temperature of solder is higher than the rated


temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10C.

* * Soldering a device without preheating can cause


excessive thermal shock and stress which can result in
damage to the device.

TYPICAL SOLDER HEATING PROFILE


The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177189C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

For any given circuit board, there will be a group of


control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating profile for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 9 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems, but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.

 
(&
7 
J & K


 
 
!
(& )
J
&/K 7
 L 
J & K

 
(& )
7
 L 
J
&/K

 
(& )
7
 L 3
J
/K

 
!

  ;
&/ &

#+ 8

3

+
 + " ! ' ()(
&

&

 4#










#+ 
#>"+ '
  2
+

+ +) 
&

' &

 4#5

+
 + " ! ' #%
&

&

 4#



    3 " 
 &#

&D

Figure 9. Typical Solder Heating Profile

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193

 3
#)

+$/
   
    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.

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Specification Features

500 mW Rating on FR4 or FR5 Board


Wide Zener Reverse Voltage Range 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 X 20 ms)

1
Cathode

2
Anode

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

1
SOD123
CASE 425
STYLE 1

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

MARKING DIAGRAM

MAXIMUM RATINGS
Rating

Symbol

Max

Unit

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C

Ppk

225

Watts

Total Power Dissipation on FR5 Board,


(Note 2) @ TL = 75C
Derated above 75C

PD

500
6.7

mW
mW/C

Thermal Resistance
JunctiontoAmbient (Note 3)

RqJA

340

C/W

Thermal Resistance
JunctiontoLead (Note 3)

RqJL

150

C/W

TJ, Tstg

55 to
+150

Junction and Storage


Temperature Range

June, 2004 Rev. 1

194

= Specific Device Code


= Date Code

ORDERING INFORMATION
Package

Shipping

MMSZxxxET1

SOD123

3000/Tape & Reel

MMSZxxxET3

SOD123

10,000/Tape & Reel

Device

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR5 = 3.5 X 1.5 inches, using the On minimum recommended footprint as
shown in Figure NO TAG.
3. Thermal Resistance measurement obtained via infrared Scan Method

Semiconductor Components Industries, LLC, 2004

xx
M

xx M

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 195 of
this data sheet.

Publication Order Number:


MMSZ2V4ET1/D

MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 4 and 5)

ZZT1
(Note 6)

VZ2 (V)
(Notes 4 and 5)

@ IZT1 = 5 mA

ZZT2
(Note 6)

Leakage Current

@ IZT2 = 1 mA

IR @ VR

Device

Device
Marking

Min

Nom

Max

Min

Max

mA

MMSZ2V4ET1

CL1

2.28

2.4

2.52

100

1.7

2.1

600

50

MMSZ2V7ET1

CL2

2.57

2.7

2.84

100

1.9

2.4

600

20

MMSZ3V0ET1

CL3

2.85

3.0

3.15

95

2.1

2.7

600

10

MMSZ3V3ET1

CL4

3.14

3.3

3.47

95

2.3

2.9

600

MMSZ3V6ET1

CL5

3.42

3.6

3.78

90

2.7

3.3

600

MMSZ3V9ET1

CL6

3.71

3.9

4.10

90

2.9

3.5

600

MMSZ4V3ET1

CL7

4.09

4.3

4.52

90

3.3

4.0

600

MMSZ4V7ET1

CL8

4.47

4.7

4.94

80

3.7

4.7

500

MMSZ5V1ET1

CL9

4.85

5.1

5.36

60

4.2

5.3

480

MMSZ5V6ET1

CM1

5.32

5.6

5.88

40

4.8

6.0

400

MMSZ6V2ET1

CM2

5.89

6.2

6.51

10

5.6

6.6

150

MMSZ6V8ET1

CM3

6.46

6.8

7.14

15

6.3

7.2

80

MMSZ7V5ET1

CM4

7.13

7.5

7.88

15

6.9

7.9

80

MMSZ8V2ET1

CM5

7.79

8.2

8.61

15

7.6

8.7

80

0.7

MMSZ9V1ET1

CM6

8.65

9.1

9.56

15

8.4

9.6

100

0.5

MMSZ10ET1

CM7

9.50

10

10.50

20

9.3

10.6

150

0.2

MMSZ11ET1

CM8

10.45

11

11.55

20

10.2

11.6

150

0.1

MMSZ12ET1

CM9

11.40

12

12.60

25

11.2

12.7

150

0.1

MMSZ13ET1

CN1

12.35

13

13.65

30

12.3

14.0

170

0.1

MMSZ15ET1

CN2

14.25

15

15.75

30

13.7

15.5

200

0.05

10.5

MMSZ16ET1

CN3

15.20

16

16.80

40

15.2

17.0

200

0.05

11.2

MMSZ18ET1

CN4

17.10

18

18.90

45

16.7

19.0

225

0.05

12.6

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.

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195

MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 4 and 5)

ZZT1
(Note 6)

VZ2 (V)
(Notes 4 and 5)

@ IZT1 = 5 mA

ZZT2
(Note 6)

@ IZT2 = 1 mA

Leakage Current
IR @ VR

Device

Device
Marking

Min

Nom

Max

Min

Max

mA

MMSZ20ET1

CN5

19.00

20

21.00

55

18.7

21.1

225

0.05

14

MMSZ22ET1

CN6

20.90

22

23.10

55

20.7

23.2

250

0.05

15.4

MMSZ24ET1

CN7

22.80

24

25.20

70

22.7

25.5

250

0.05

16.8

MMSZ27ET1

CN8

25.65

27

28.35

80

25

28.9

300

0.05

18.9

MMSZ30ET1

CN9

28.50

30

31.50

80

27.8

32

300

0.05

21

MMSZ33ET1

CP1

31.35

33

34.65

80

30.8

35

325

0.05

23.1

MMSZ36ET1

CP2

34.20

36

37.80

90

33.8

38

350

0.05

25.2

MMSZ39ET1

CP3

37.05

39

40.95

130

36.7

41

350

0.05

27.3

MMSZ43ET1

CP4

40.85

43

45.15

150

39.7

46

375

0.05

30.1

MMSZ47ET1

CP5

MMSZ51ET1

CP6

48.45

51

53.55

180

47.6

54

400

0.05

35.7

MMSZ56ET1

CP7

53.20

56

58.80

200

51.5

60

425

0.05

39.2

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.

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196

MMSZ2V4ET1 Series

100

!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES

6
5
4

10

!7 0 7

3
2
1
0

2
13
2

4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)

11

TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES

VZ @ IZT

12

10

100
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1000

Ppk, PEAK SURGE POWER (WATTS)

+* % +

 & %&


1.2
1.0
PD versus TL

0.8
0.6

100

PD versus TA

0.4
0.2
0

25

50
75
100
T, TEMPERATURE (C)

RECTANGULAR
WAVEFORM, TA = 25C

125

10

150

0.1

Figure 3. Steady State Power Derating

1000

1000

IZ = 1 mA

TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

7 7 *+5&  +& 

10
100
PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1000

100

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

100

5 mA
20 mA
10

10
VZ, NOMINAL ZENER VOLTAGE

100

10
150C
1
0.4

Figure 5. Effect of Zener Voltage on


Zener Impedance

0.5

25C
0C
75C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 6. Typical Forward Voltage

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197

1.1

1.2

MMSZ2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
TA = 25C

0 V BIAS
1 V BIAS
*& & &A'

 *#&/&)"   &

1000

100
BIAS AT
50% OF VZ NOM

10
1
+150C

0.1

0.01

10

100

100

10
VZ, NOMINAL ZENER VOLTAGE (V)

0.001

+ 25C

0.0001

55C

0.00001
0

10

Figure 7. Typical Capacitance

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 8. Typical Leakage Current


100

100

 7 *7 "  &

TA = 25C

10

10

0.1

0.1

4
6
8
VZ, ZENER VOLTAGE (V)

0.01

12

10

10

100

50
70
VZ, ZENER VOLTAGE (V)

PEAK VALUE IRSM @ 8 ms

tr

90

30

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10
0

20

90

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% OF PEAK PULSE CURRENT

 7 *7 "  &

TA = 25C

0.01

80

40

60

t, TIME (ms)

Figure 11. 8 20 ms Pulse Waveform

http://onsemi.com
198

80

90

MMSZ2V4ET1 Series

http://onsemi.com
199

+$
   
    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.

http://onsemi.com

Specification Features:

500 mW Rating on FR4 or FR5 Board


Wide Zener Reverse Voltage Range 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
PbFree Package is Available

1
Cathode

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

1
SOD123
CASE 425
STYLE 1

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

MARKING DIAGRAM

MAXIMUM RATINGS
Rating
Total Power Dissipation on FR5 Board,
(Note 1) @ TL = 75C
Derated above 75C

Symbol
PD

Max

Unit

500
6.7

mW
mW/C

Thermal Resistance
JunctiontoAmbient (Note 2)

RqJA

340

C/W

Thermal Resistance
JunctiontoLead (Note 2)

RqJL

150

C/W

TJ, Tstg

55 to
+150

Junction and Storage


Temperature Range

2
Anode

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 3.5 X 1.5 inches.
2. Thermal Resistance measurement obtained via infrared Scan Method.

xx
M

xx M

= Specific Device Code


= Date Code

ORDERING INFORMATION
Package

Shipping

MMSZxxxT1

SOD123

3000/Tape & Reel

MMSZxxxT3*

SOD123

10,000/Tape & Reel

Device

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Individual devices are listed on page 202 of this data sheet.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 202 of
this data sheet.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 4

200

Publication Order Number:


MMSZ2V4T1/D

MMSZ2V4T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

http://onsemi.com
201

MMSZ2V4T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (Volts)
(Notes 3 and 4)

ZZT1
(Note 5)

VZ2 (Volts)
(Notes 3 and 4)

@ IZT1 = 5 mA

ZZT2
(Note 5)

Leakage Current

@ IZT2 = 1 mA

IR @ VR

Device
Marking

Min

Nom

Max

Min

Max

mA

Volts

MMSZ2V4T1

T1

2.28

2.4

2.52

100

1.7

2.1

600

50

MMSZ2V7T1

T2

2.57

2.7

2.84

100

1.9

2.4

600

20

MMSZ3V0T1*

T3

2.85

3.0

3.15

95

2.1

2.7

600

10

MMSZ3V3T1

T4

3.14

3.3

3.47

95

2.3

2.9

600

MMSZ3V6T1

T5

3.42

3.6

3.78

90

2.7

3.3

600

MMSZ3V9T1

U1

3.71

3.9

4.10

90

2.9

3.5

600

MMSZ4V3T1

U2

4.09

4.3

4.52

90

3.3

4.0

600

MMSZ4V7T1

U3

4.47

4.7

4.94

80

3.7

4.7

500

MMSZ5V1T1

U4

4.85

5.1

5.36

60

4.2

5.3

480

MMSZ5V6T1*

U5

5.32

5.6

5.88

40

4.8

6.0

400

MMSZ6V2T1*

V1

5.89

6.2

6.51

10

5.6

6.6

150

MMSZ6V8T1

V2

6.46

6.8

7.14

15

6.3

7.2

80

MMSZ7V5T1

V3

7.13

7.5

7.88

15

6.9

7.9

80

MMSZ8V2T1

V4

7.79

8.2

8.61

15

7.6

8.7

80

0.7

MMSZ9V1T1

V5

8.65

9.1

9.56

15

8.4

9.6

100

0.5

MMSZ10T1

A1

9.50

10

10.50

20

9.3

10.6

150

0.2

MMSZ11T1

A2

10.45

11

11.55

20

10.2

11.6

150

0.1

MMSZ12T1

A3

11.40

12

12.60

25

11.2

12.7

150

0.1

MMSZ13T1

A4

12.35

13

13.65

30

12.3

14.0

170

0.1

MMSZ15T1

A5

14.25

15

15.75

30

13.7

15.5

200

0.05

10.5

MMSZ16T1

X1

15.20

16

16.80

40

15.2

17.0

200

0.05

11.2

MMSZ18T1

X2

17.10

18

18.90

45

16.7

19.0

225

0.05

12.6

MMSZ20T1,G**

X3

19.00

20

21.00

55

18.7

21.1

225

0.05

14

MMSZ22T1

X4

20.90

22

23.10

55

20.7

23.2

250

0.05

15.4

MMSZ24T1

X5

22.80

24

25.20

70

22.7

25.5

250

0.05

16.8

MMSZ27T1

Y1

25.65

27

28.35

80

25

28.9

300

0.05

18.9

MMSZ30T1

Y2

28.50

30

31.50

80

27.8

32

300

0.05

21

MMSZ33T1

Y3

31.35

33

34.65

80

30.8

35

325

0.05

23.1

Device

MMSZ36T1

Y4

34.20

36

37.80

90

33.8

38

350

0.05

25.2

MMSZ39T1

Y5

37.05

39

40.95

130

36.7

41

350

0.05

27.3

MMSZ43T1

Z1

40.85

43

45.15

150

39.7

46

375

0.05

30.1

MMSZ51T1

Z3

48.45

51

53.55

180

47.6

54

400

0.05

35.7

MMSZ56T1

Z4

53.20

56

58.80

200

51.5

60

425

0.05

39.2

3. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
4. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.
The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
*Not Available in the 10,000/Tape & Reel.
* *The G suffix indicates PbFree package available.

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202

MMSZ2V4T1 Series

8
7

!7*   & " '' !:

!7*   & " '' !:

TYPICAL CHARACTERISTICS

TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES

6
5
4

VZ @ IZT

3
2
1
0
1
2

TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES

VZ @ IZT
10

3
2

10

11

10

12

100

VZ, NOMINAL ZENER VOLTAGE (V)

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1.2

A? * &/
" ) % %&


1000

1.0

PD versus TL

0.8

0.6

PD versus TA

0.4

0.2

RECTANGULAR
WAVEFORM, TA = 25C
100

10

1
0

25

50

75

100

125

150

0.1

10

100

1000

T, TEMPERATURE (C)

PW, PULSE WIDTH (ms)

Figure 3. Steady State Power Derating

Figure 4. Maximum Nonrepetitive Surge Power

1000

1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

'*' %& +"  &

7 7 *+5&  +& 

100

IZ = 1 mA
100
5 mA

20 mA
10

100

10

150C
1

75C

25C

0C

1
1

10

100

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VZ, NOMINAL ZENER VOLTAGE

VF, FORWARD VOLTAGE (V)

Figure 5. Effect of Zener Voltage on


Zener Impedance

Figure 6. Typical Forward Voltage

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203

1.1

1.2

MMSZ2V4T1 Series
TYPICAL CHARACTERISTICS
1000

 *#&/&)"   &

1000
TA = 25C
0 V BIAS

*& & &A'

1 V BIAS
100

BIAS AT
50% OF VZ NOM
10

100
10
1
+150C

0.1
0.01

+ 25C

0.001

55C

0.0001
1

0.00001
1

10

100

10

20

30

40

50

60

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Capacitance

Figure 8. Typical Leakage Current

TA = 25C

 7 *7 "  &

TA = 25C

 7 *7 "  &

80

100

100

10

0.1

0.01

70

VZ, NOMINAL ZENER VOLTAGE (V)

10

12

10

0.1

0.01

10

30

50

70

90

VZ, ZENER VOLTAGE (V)

VZ, ZENER VOLTAGE (V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

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204

90

$,/
   
    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Features

PbFree Packages are Available


500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 x 20 ms)

1
Cathode

2
Anode

SOD123
CASE 425
STYLE 1

2
1

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

MARKING DIAGRAM

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

xxx M

xxx = Specific Device Code


M = Date Code

MAXIMUM RATINGS
Rating

Symbol

Max

Unit

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C

Ppk

225

Total Power Dissipation on FR5 Board,


(Note 2) @ TL = 75C
Derated above 75C

PD

ORDERING INFORMATION
Package

Shipping

MMSZ4xxxET1

SOD123

3000/Tape & Reel

Device*
500
6.7

mW
mW/C

Thermal Resistance, (Note 3)


JunctiontoAmbient

RqJA

340

C/W

MMSZ4xxxET1G

SOD123
(PbFree)

3000/Tape & Reel

Thermal Resistance, (Note 3)


JunctiontoLead

RqJL

150

C/W

MMSZ4xxxET3

SOD123

10,000/Tape & Reel

MMSZ4xxxET3G
55 to
+150

SOD123
(PbFree)

10,000/Tape & Reel

TJ, Tstg

Junction and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.

*The T1 suffix refers to an 8 mm, 7 inch reel.


The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 206 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 2

205

Publication Order Number:


MMSZ4678ET1/D

MMSZ4678ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Note 1)
VZ (V)

Leakage Current
@ IZT

IR @ VR

Device
Marking

Min

Nom

Max

mA

mA

MMSZ4684ET1

CG3

3.13

3.3

3.47

50

7.5

1.5

MMSZ4688ET1, G

CG7

4.47

4.7

4.94

50

10

MMSZ4689ET1

CG8

4.85

5.1

5.36

50

10

MMSZ4690ET1

CG9

5.32

5.6

5.88

50

10

MMSZ4691ET1

CH1

5.89

6.2

6.51

50

10

MMSZ4692ET1

CH2

6.46

6.8

7.14

50

10

5.1

MMSZ4693ET1

CH3

7.13

7.5

7.88

50

10

5.7

MMSZ4697ET1

CH7

9.50

10

10.50

50

7.6

MMSZ4699ET1

CH9

11.40

12

12.60

50

0.05

9.1

MMSZ4702ET1

CJ3

14.25

15

15.75

50

0.05

11.4

MMSZ4703ET1

CJ4

15.20

16

16.80

50

0.05

12.1

MMSZ4705ET1

CJ6

17.10

18

18.90

50

0.05

13.6

MMSZ4709ET1

CK1

22.80

24

25.20

50

0.01

18.2

MMSZ4711ET1

CK3

25.65

27

28.35

50

0.01

20.4

MMSZ4717ET1

CK9

40.85

43

45.15

50

0.01

32.6

Device

1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.

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206

MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
100

!7*   & " '' !:

!7*   & " '' !:

8
TYPICAL TC VALUES

6
5
4

VZ @ IZT

3
2
1
0
1
2
3
2

10

11

VZ @ IZT
10

12

10
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

A? * &/
" ) % %&


PD, POWER DISSIPATION (WATTS)

1000

1.0
PD versus TL

0.8
0.6

PD versus TA

0.2

25

50
75
100
T, TEMPERATURE (C)

RECTANGULAR
WAVEFORM, TA = 25C

100

0.4

125

10

150

0.1

Figure 3. Steady State Power Derating

1000

1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

IZ = 1 mA

100

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

100

5 mA
20 mA
10

10

150C
1

10
100
PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1000
7 7 *+5&  +& 

100

VZ, NOMINAL ZENER VOLTAGE (V)

1.2

TYPICAL TC VALUES

10
VZ, NOMINAL ZENER VOLTAGE

100

1
0.4

Figure 5. Effect of Zener Voltage on


Zener Impedance

0.5

75C 25C

0C

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 6. Typical Forward Voltage

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207

1.1

1.2

MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
1000
TA = 25C

0 V BIAS
1 V BIAS

C, CAPACITANCE (pF)

 *#&/&)"   m &

1000

100
BIAS AT
50% OF VZ NOM

10
1
+150C

0.1

0.01

10

100

100

10
VZ, NOMINAL ZENER VOLTAGE (V)

0.001

+ 25C

0.0001

55C

0.00001

10

Figure 7. Typical Capacitance


100
I Z, ZENER CURRENT (mA)

TA = 25C
10

0.1

4
6
8
VZ, ZENER VOLTAGE (V)

10

12

TA = 25C
10

0.1

0.01

100

30

50
70
VZ, ZENER VOLTAGE (V)

PEAK VALUE IRSM @ 8 ms

tr

90

10

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10
0

90

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% OF PEAK PULSE CURRENT

I Z, ZENER CURRENT (mA)

80

Figure 8. Typical Leakage Current

100

0.01

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

20

40

60

t, TIME (ms)

Figure 11. 8 20 ms Pulse Waveform

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208

80

90

$,
   
    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.

http://onsemi.com

Features

PbFree Packages are Available

1
Cathode

For Additional PbFree Options, Please Consult Factory


500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model

2
Anode

SOD123
CASE 425
STYLE 1

2
1

Mechanical Characteristics

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

MARKING DIAGRAM

CASE: Void-free, transfer-molded, thermosetting plastic case


FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

xx
M

xx M

= Specific Device Code


= Date Code

MAXIMUM RATINGS
Rating
Total Power Dissipation on FR5 Board,
(Note 1) @ TL = 75C
Derated above 75C

Symbol
PD

Max

Unit

500
6.7

mW
mW/C

ORDERING INFORMATION
Device**

Package

Shipping

MMSZ4xxxT1

SOD123

3000/Tape & Reel

Thermal Resistance, (Note 2)


JunctiontoAmbient

RqJA

340

C/W

MMSZ4xxxT1G

SOD123
(PbFree)

3000/Tape & Reel

Thermal Resistance, (Note 2)


JunctiontoLead

RqJL

150

C/W

MMSZ4xxxT3

SOD123

10,000/Tape & Reel

55 to
+150

MMSZ4xxxT3G* SOD123
(PbFree)

10,000/Tape & Reel

TJ, Tstg

Junction and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.

*MMSZ4703T1 and MMSZ4711T1 Not Available in


10,000/Tape & Reel
**The T1 suffix refers to an 8 mm, 7 inch reel.
The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 211 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 4

209

Publication Order Number:


MMSZ4678T1/D

MMSZ4678T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

http://onsemi.com
210

MMSZ4678T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Note 3)
VZ (Volts)

Leakage Current
@ IZT

IR @ VR

Device
Marking

Min

Nom

Max

mA

mA

Volts

MMSZ4678T1

CC

1.71

1.8

1.89

50

7.5

MMSZ4678T1, G

CC

1.71

1.8

1.89

50

7.5

MMSZ4679T1

CD

1.90

2.0

2.10

50

MMSZ4680T1, G

CE

2.09

2.2

2.31

50

MMSZ4681T1, G

CF

2.28

2.4

2.52

50

MMSZ4682T1, G

CH

2.565

2.7

2.835

50

MMSZ4683T1

CJ

2.85

3.0

3.15

50

0.8

MMSZ4684T1, G

CK

3.13

3.3

3.47

50

7.5

1.5

MMSZ4685T1, G

CM

3.42

3.6

3.78

50

7.5

MMSZ4686T1

CN

3.70

3.9

4.10

50

MMSZ4687T1, G

CP

4.09

4.3

4.52

50

MMSZ4688T1

CT

4.47

4.7

4.94

50

10

Device

MMSZ4689T1

CU

4.85

5.1

5.36

50

10

MMSZ4690T1, G

CV

5.32

5.6

5.88

50

10

MMSZ4691T1

CA

5.89

6.2

6.51

50

10

MMSZ4692T1, G

CX

6.46

6.8

7.14

50

10

5.1

MMSZ4693T1

CY

7.13

7.5

7.88

50

10

5.7

MMSZ4694T1

CZ

7.79

8.2

8.61

50

6.2

MMSZ4695T1, G

DC

8.27

8.7

9.14

50

6.6

MMSZ4696T1, G

DD

8.65

9.1

9.56

50

6.9

MMSZ4697T1

DE

9.50

10

10.50

50

7.6

MMSZ4698T1

DF

10.45

11

11.55

50

0.05

8.4

MMSZ4699T1, G

DH

11.40

12

12.60

50

0.05

9.1

MMSZ4700T1

DJ

12.35

13

13.65

50

0.05

9.8

MMSZ4701T1

DK

13.30

14

14.70

50

0.05

10.6

MMSZ4702T1

DM

14.25

15

15.75

50

0.05

11.4

MMSZ4703T1*

DN

15.20

16

16.80

50

0.05

12.1

MMSZ4704T1

DP

16.15

17

17.85

50

0.05

12.9

MMSZ4705T1

DT

17.10

18

18.90

50

0.05

13.6

MMSZ4706T1

DU

18.05

19

19.95

50

0.05

14.4

MMSZ4707T1

DV

19.00

20

21.00

50

0.01

15.2

MMSZ4708T1

DA

20.90

22

23.10

50

0.01

16.7

MMSZ4709T1, G

DX

22.80

24

25.20

50

0.01

18.2

MMSZ4710T1

DY

23.75

25

26.25

50

0.01

19.0

MMSZ4711T1*

EA

25.65

27

28.35

50

0.01

20.4

MMSZ4712T1

EC

26.60

28

29.40

50

0.01

21.2

MMSZ4713T1

ED

28.50

30

31.50

50

0.01

22.8

MMSZ4714T1

EE

31.35

33

34.65

50

0.01

25.0

MMSZ4715T1

EF

34.20

36

37.80

50

0.01

27.3

MMSZ4716T1

EH

37.05

39

40.95

50

0.01

29.6

MMSZ4717T1

EJ

40.85

43

45.15

50

0.01

32.6

3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
*Not Available in the 10,000/Tape & Reel.

http://onsemi.com
211

MMSZ4678T1 Series
TYPICAL CHARACTERISTICS
!7*   & " '' !:

!7*   & " '' !:

2
3


5 &#  !&#"




!7 0 7





.
.G
.G



3
2
;

!7*  &# 7 !# &) !




5 &#  !&#"

!7 0 7


12




!7*  &# 7 !# &) !

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)


A? * &/
" ) % %&


PD, POWER DISSIPATION (WATTS)

,
,
+ M #

,2
,

+ M &

,
,





3

*   & "  



 &)"#&
%&!' * & 1 





,



Figure 3. Steady State Power Derating


%* "#
 %+ ( 





Figure 4. Maximum Nonrepetitive Surge Power



1000

7 1  &

TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

'*' %& +"  &

7 7 *+5&  +& 

100

 &
 &
10

3 ! 
734 
; ! 
734 





1


!7*  &# 7 !# &)



,

Figure 5. Effect of Zener Voltage on


Zener Impedance

,

3 
,



,3
,2
,;
,
!'* ' %& + !# &) !

Figure 6. Typical Forward Voltage

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212

,

,

MMSZ4678T1 Series
TYPICAL CHARACTERISTICS




*& & &A'

 ! 4&

 ! 4&

 *#&/&)"   &

& 1 


4&
&
- ' !7 



!7*  &# 7 !# &) !






H

,
,

,

HG

,

.G

,



Figure 7. Typical Capacitance



& 1 



,

,



2
!7* 7 !# &) !





3
!7*  &# 7 !# &) !

2

Figure 8. Typical Leakage Current

 7 *7 "  &

 7 *7 "  &









& 1 



,

,






3
!7* 7 !# &) !

;

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

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213

;

++!
   
Preferred Device

    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.

http://onsemi.com

Features

PbFree Packages are Available


500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (>16 kV) per Human Body Model

1
Cathode

2
Anode

SOD123
CASE 425
STYLE 1

2
1

Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

MARKING DIAGRAM

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

xx
M

xx M

= Specific Device Code


= Date Code

MAXIMUM RATINGS
Rating

Symbol

Total Power Dissipation on FR5 Board,


(Note 1) @ TL = 75C
Derated above 75C

PD

Max

Unit

500
6.7

mW
mW/C

ORDERING INFORMATION

Thermal Resistance, (Note 2)


JunctiontoAmbient

RqJA

340

C/W

Thermal Resistance, (Note 2)


JunctiontoLead

RqJL

150

C/W

TJ, Tstg

55 to
+150

Junction and Storage Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.

Package

Shipping

MMSZ52xxBT1

SOD123

3000/Tape & Reel

MMSZ52xxBT1G

SOD123
(PbFree)

3000/Tape & Reel

MMSZ52xxBT3

SOD123

10,000/Tape & Reel

MMSZ52xxBT3G

SOD123
(PbFree)

10,000/Tape & Reel

Device**

**The T1 suffix refers to an 8 mm, 7 inch reel.


The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 216 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 4

214

Publication Order Number:


MMSZ5221BT1/D

MMSZ5221BT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR
IR VF
IZT

Zener Voltage Regulator

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215

MMSZ5221BT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 3 and 4)
VZ (Volts)

@ IZT

Zener Impedance (Note 5)


ZZT @ IZT

Leakage Current

ZZK @ IZK

IR @ VR

Device
Marking

Min

Nom

Max

mA

mA

mA

Volts

MMSZ5221BT1
MMSZ5222BT1
MMSZ5223BT1, G
MMSZ5224BT1
MMSZ5225BT1

C1
C2
C3
C4
C5

2.28
2.38
2.57
2.66
2.85

2.4
2.5
2.7
2.8
3.0

2.52
2.63
2.84
2.94
3.15

20
20
20
20
20

30
30
30
30
29

1200
1250
1300
1400
1600

0.25
0.25
0.25
0.25
0.25

100
100
75
75
50

1
1
1
1
1

MMSZ5226BT1, G
MMSZ5227BT1, G
MMSZ5228BT1, G
MMSZ5229BT1
MMSZ5230BT1

D1
D2
D3
D4
D5

3.14
3.42
3.71
4.09
4.47

3.3
3.6
3.9
4.3
4.7

3.47
3.78
4.10
4.52
4.94

20
20
20
20
20

28
24
23
22
19

1600
1700
1900
2000
1900

0.25
0.25
0.25
0.25
0.25

25
15
10
5
5

1
1
1
1
2

MMSZ5231BT1
MMSZ5232BT1
MMSZ5233BT1, G
MMSZ5234BT1, G
MMSZ5235BT1

E1
E2
E3
E4
E5

4.85
5.32
5.70
5.89
6.46

5.1
5.6
6.0
6.2
6.8

5.36
5.88
6.30
6.51
7.14

20
20
20
20
20

17
11
7
7
5

1600
1600
1600
1000
750

0.25
0.25
0.25
0.25
0.25

5
5
5
5
3

2
3
3.5
4
5

MMSZ5236BT1
MMSZ5237BT1, G
MMSZ5238BT1
MMSZ5239BT1
MMSZ5240BT1, G

F1
F2
F3
F4
F5

7.13
7.79
8.27
8.65
9.50

7.5
8.2
8.7
9.1
10

7.88
8.61
9.14
9.56
10.50

20
20
20
20
20

6
8
8
10
17

500
500
600
600
600

0.25
0.25
0.25
0.25
0.25

3
3
3
3
3

6
6.5
6.5
7
8

MMSZ5241BT1
MMSZ5242BT1, G
MMSZ5243BT1, G
MMSZ5244BT1, G
MMSZ5245BT1

H1
H2
H3
H4
H5

10.45
11.40
12.35
13.30
14.25

11
12
13
14
15

11.55
12.60
13.65
14.70
15.75

20
20
9.5
9.0
8.5

22
30
13
15
16

600
600
600
600
600

0.25
0.25
0.25
0.25
0.25

2
1
0.5
0.1
0.1

8.4
9.1
9.9
10
11

MMSZ5246BT1
MMSZ5247BT1, G
MMSZ5248BT1
MMSZ5250BT1

J1
J2
J3
J5

15.20
16.15
17.10
19.00

16
17
18
20

16.80
17.85
18.90
21.00

7.8
7.4
7.0
6.2

17
19
21
25

600
600
600
600

0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1

12
13
14
15

MMSZ5251BT1, G
MMSZ5252BT1
MMSZ5253BT1
MMSZ5254BT1
MMSZ5255BT1

K1
K2
K3
K4
K5

20.90
22.80
23.75
25.65
26.60

22
24
25
27
28

23.10
25.20
26.25
28.35
29.40

5.6
5.2
5.0
4.6
4.5

29
33
35
41
44

600
600
600
600
600

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

17
18
19
21
21

MMSZ5256BT1
MMSZ5257BT1
MMSZ5258BT1
MMSZ5259BT1
MMSZ5260BT1

M1
M2
M3
M4
M5

28.50
31.35
34.20
37.05
40.85

30
33
36
39
43

31.50
34.65
37.80
40.95
45.15

4.2
3.8
3.4
3.2
3.0

49
58
70
80
93

600
700
700
800
900

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

23
25
27
30
33

MMSZ5261BT1
MMSZ5262BT1
MMSZ5263BT1
MMSZ5264BT1
MMSZ5265BT1

N1
N2
N3
N4
N5

44.65
48.45
53.20
57.00
58.90

47
51
56
60
62

49.35
53.55
58.80
63.00
65.10

2.7
2.5
2.2
2.1
2.0

105
125
150
170
185

1000
1100
1300
1400
1400

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

36
39
43
46
47

MMSZ5266BT1, G
MMSZ5267BT1, G
MMSZ5268BT1, G
MMSZ5269BT1
MMSZ5270BT1, G

P1
P2
P3
P4
P5

64.60
71.25
77.90
82.65
86.45

68
75
82
87
91

71.40
78.75
86.10
91.35
95.55

1.8
1.7
1.5
1.4
1.4

230
270
330
370
400

1600
1700
2000
2200
2300

0.25
0.25
0.25
0.25
0.25

0.1
0.1
0.1
0.1
0.1

52
56
62
68
69

MMSZ5272BT1

R2

104.5

110

115.5

1.1

750

3000

0.25

0.1

84

Device

3. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
4. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C $1C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 KHz.

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216

MMSZ5221BT1 Series

100

TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES

6
5
4

VZ @ IZT

3
2
1
0
1
2
3

qVZ, TEMPERATURE COEFFICIENT (mV/C)

qVZ, TEMPERATURE COEFFICIENT (mV/C)

TYPICAL CHARACTERISTICS

4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)

11

12

TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES

VZ @ IZT
10

10

100
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1.2

Ppk, PEAK SURGE POWER (WATTS)

1000

1.0
PD versus TL

0.8
0.6

100

PD versus TA

0.4
0.2
0

25

RECTANGULAR
WAVEFORM, TA = 25C

50
75
100
T, TEMPERATURE (C)

125

150

10

Figure 3. Steady State Power Derating

1000

1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

IF, FORWARD CURRENT (mA)

IZ = 1 mA

100

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

100

5 mA
20 mA
10

10

150C
1

10
100
PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1000
ZZT, DYNAMIC IMPEDANCE (W)

0.1

75C 25C

0C

1
1

10
VZ, NOMINAL ZENER VOLTAGE

100

0.4

Figure 5. Effect of Zener Voltage on


Zener Impedance

0.5

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 6. Typical Forward Voltage

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217

1.1

1.2

MMSZ5221BT1 Series

IR, LEAKAGE CURRENT (mA)

TYPICAL CHARACTERISTICS
1000
TA = 25C

C, CAPACITANCE (pF)

0 V BIAS
1 V BIAS

100
BIAS AT
50% OF VZ NOM
10

100

10
VZ, NOMINAL ZENER VOLTAGE (V)

1000
100
10
1
+150C

0.1
0.01

0.001

+ 25C

0.0001

55C

0.00001

10

Figure 7. Typical Capacitance

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 8. Typical Leakage Current

100

100

TA = 25C
IZ, ZENER CURRENT (mA)

IZ, ZENER CURRENT (mA)

TA = 25C
10

0.1

0.01

80

10

0.1

0.01
0

4
6
8
VZ, ZENER VOLTAGE (V)

10

12

10

30

50
70
VZ, ZENER VOLTAGE (V)

90

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

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218

90

++/
   
Preferred Device

    % 
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.

http://onsemi.com

Features

PbFree Packages are Available


500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 x 20 ms)

1
Cathode

2
Anode

SOD123
CASE 425
STYLE 1

2
1

MARKING DIAGRAM
Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case


FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0

xxx = Specific Device Code


M = Date Code

MAXIMUM RATINGS

ORDERING INFORMATION

Rating

Symbol

Max

Unit

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C

Ppk

225

Total Power Dissipation on FR5 Board,


(Note 2) @ TL = 75C
Derated above 75C

PD

500
6.7

mW
mW/C
C/W

Thermal Resistance, (Note 3)


JunctiontoAmbient

RqJA

340

Thermal Resistance, (Note 3)


JunctiontoLead

RqJL

150

C/W

TJ, Tstg

55 to
+150

Junction and Storage Temperature Range

xxx M

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.

Package

Shipping

MMSZ52xxET1

SOD123

3000/Tape & Reel

MMSZ52xxET1G

SOD123
(PbFree)

3000/Tape & Reel

MMSZ52xxET3

SOD123

10,000/Tape & Reel

MMSZ52xxET3G

SOD123
(PbFree)

10,000/Tape & Reel

Device**

**The T1 suffix refers to an 8 mm, 7 inch reel.


The T3 suffix refers to an 8 mm, 13 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 220 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 3

219

Publication Order Number:


MMSZ5221ET1/D

MMSZ5221ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Reverse Voltage

IF

Forward Current

VF

Forward Voltage @ IF

VZ VR

IR VF
IZT

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 4 and 5)
VZ (V)

Zener Impedance (Note 6)

Leakage Current

@ IZT

ZZT @ IZT

Max

mA

mA

mA

2.4

2.52

20

30

1200

0.25

100

2.57

2.7

2.84

20

30

1300

0.25

75

3.14

3.3

3.47

20

28

1600

0.25

25

CA8

3.71

3.9

4.10

20

23

1900

0.25

10

MMSZ5229ET1

CA9

4.09

4.3

4.52

20

22

2000

0.25

MMSZ5231ET1

CB2

4.85

5.1

5.36

20

17

1600

0.25

MMSZ5232ET1, G

CB3

5.32

5.6

5.88

20

11

1600

0.25

MMSZ5234ET1

CB5

5.89

6.2

6.51

20

1000

0.25

MMSZ5235ET1

CB6

6.46

6.8

7.14

20

750

0.25

MMSZ5236ET1, G

CB7

7.13

7.5

7.88

20

500

0.25

MMSZ5237ET1

CB8

7.79

8.2

8.61

20

500

0.25

6.5

MMSZ5240ET1, G

CC2

9.50

10

10.50

20

17

600

0.25

MMSZ5242ET1, G

CC4

11.40

12

12.60

20

30

600

0.25

9.1

MMSZ5243ET1

CC5

12.35

13

13.65

9.5

13

600

0.25

0.5

9.9

MMSZ5244ET1

CC6

13.30

14

14.70

9.0

15

600

0.25

0.1

10

MMSZ5245ET1

CC7

14.25

15

15.75

8.5

16

600

0.25

0.1

11

MMSZ5246ET1

CC8

15.20

16

16.80

7.8

17

600

0.25

0.1

12

MMSZ5248ET1

CD1

17.10

18

18.90

7.0

21

600

0.25

0.1

14

MMSZ5250ET1

CD3

19.00

20

21.00

6.2

25

600

0.25

0.1

15

MMSZ5252ET1

CD5

22.80

24

25.20

5.2

33

600

0.25

0.1

18

MMSZ5255ET1

CD8

26.60

28

29.40

4.5

44

600

0.25

0.1

21

MMSZ5257ET1

CE1

31.35

33

34.65

3.8

58

700

0.25

0.1

25

MMSZ5263ET1

CE7

53.20

56

58.80

2.2

150

1300

0.25

0.1

43

Device
Marking

Min

Nom

MMSZ5221ET1

CA1

2.28

MMSZ5223ET1

CA3

MMSZ5226ET1

CA6

MMSZ5228ET1

Device

ZZK @ IZK

4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C $1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.

http://onsemi.com
220

IR @ VR

MMSZ5221ET1 Series

100

TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES

6
5
4

VZ @ IZT

3
2
1
0
1
2
3

qVZ, TEMPERATURE COEFFICIENT (mV/C)

qVZ, TEMPERATURE COEFFICIENT (mV/C)

TYPICAL CHARACTERISTICS

4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)

11

12

TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES

VZ @ IZT
10

10

100
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients


(Temperature Range 55C to +150C)

Figure 2. Temperature Coefficients


(Temperature Range 55C to +150C)

1.2

Ppk, PEAK SURGE POWER (WATTS)

PD, POWER DISSIPATION (WATTS)

1000

1.0
PD versus TL

0.8
0.6

100

PD versus TA

0.4
0.2
0

25

RECTANGULAR
WAVEFORM, TA = 25C

50
75
100
T, TEMPERATURE (C)

125

150

10

Figure 3. Steady State Power Derating

1000

1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz

IF, FORWARD CURRENT (mA)

IZ = 1 mA

100

75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)

100

5 mA
20 mA
10

10

150C
1

10
100
PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1000
ZZT, DYNAMIC IMPEDANCE (W)

0.1

75C 25C

0C

1
1

10
VZ, NOMINAL ZENER VOLTAGE

100

0.4

Figure 5. Effect of Zener Voltage on


Zener Impedance

0.5

0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)

Figure 6. Typical Forward Voltage

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221

1.1

1.2

MMSZ5221ET1 Series

IR, LEAKAGE CURRENT (mA)

TYPICAL CHARACTERISTICS
1000
TA = 25C

C, CAPACITANCE (pF)

0 V BIAS
1 V BIAS

100
BIAS AT
50% OF VZ NOM
10

10
VZ, NOMINAL ZENER VOLTAGE (V)

100

1000
100
10
1
+150C

0.1
0.01

0.001

+ 25C

0.0001

55C

0.00001

10

Figure 7. Typical Capacitance

20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)

Figure 8. Typical Leakage Current

100

100

TA = 25C
IZ, ZENER CURRENT (mA)

10

0.1

10

0.1

0.01
0

4
6
8
VZ, ZENER VOLTAGE (V)

12

10

100

30

50
70
VZ, ZENER VOLTAGE (V)

PEAK VALUE IRSM @ 8 ms

tr

90

10

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80
70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20
10
0

20

90

Figure 10. Zener Voltage versus Zener Current


(12 V to 91 V)

Figure 9. Zener Voltage versus Zener Current


(VZ Up to 12 V)

% OF PEAK PULSE CURRENT

IZ, ZENER CURRENT (mA)

TA = 25C

0.01

80

40

60

t, TIME (ms)

Figure 11. 8 20 ms Pulse Waveform

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222

80

90

; 
+
;6 < 4
/(  #
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.

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MARKING
DIAGRAM
5

SC88A Package Allows Four Separate Unidirectional Configurations


Low Leakage < 1 mA @ 3 Volt
Breakdown Voltage: 6.1 Volt 7.2 Volt @ 1 mA
Low Capacitance (90 pF typical)
ESD Protection Meeting IEC100042

Specification Features
61
SC88A/SOT323
CASE 419A

61 = Device Marking
D = One Digit Date Code

Mechanical Characteristics

Void Free, TransferMolded, Thermosetting Plastic Case


Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications

2
3

ORDERING INFORMATION
Device

Package

Shipping

MSQA6V1W5T2

SC88A

3000/Tape & Reel

NOTE: T2 Suffix Devices are Packaged with Pin 1


NOTE: Opposing Sprocket Hole.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2003

November, 2003 Rev. 3

223

Publication Order Number:


MSQA6V1W5T2/D

MSQA6V1W5T2
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Value

Unit

Peak Power Dissipation @ 20 ms @TA 25C (Note 1)

Ppk

150

Steady State Power 1 Diode (Note 2)

PD

385

mW

RqJA

325
3.1

C/W
mW/C

Thermal Resistance Junction to Ambient


Above 25C, Derate
Maximum Junction Temperature

TJmax

150

Operating Junction and Storage Temperature Range

TJ Tstg

55 to +150

VPP

16
16
9

kV

TL

260

ESD Discharge

MIL STD 883C Method 30156


IEC100042, Air Discharge
IEC100042, Contact Discharge

Lead Solder Temperature (10 seconds duration)

ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VBR @ 1 mA (Volts)
Min

Device

Nom

Max

Leakage Current
IRM @ VRWM = 3 V
(mA)

Capacitance
@ 0 V Bias
(pF)

MSQA6V1W5
6.1
6.6
7.2
1.0
90
1. Nonrepetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad.





;
-' &/ "#
" 

A? * &/
" ) % %&







NOTE: NonRepetitive Surge.

Max
VF @ IF = 200 mA
(V)
1.25

&/ !&#" 
0 2 m
"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

2
3


(&#' !&#" 
: 0  m




















*   m

*   m

Figure 1. Pulse Width

Figure 2. 8 20 ms Pulse Waveform

http://onsemi.com
224

2





;

;

2

2

5 &#& & &A'


 (F' >"5

 "  0 & 1 

MSQA6V1W5T2

3






3













3







3






,

,

Figure 4. Capacitance

,

AA* &/ "#


"  &




,

,

,

,3

,2

,

,;

,



2.5 ms SQUARE WAVE

,

,

,









!'* ' %& + !# &) !#




!* #& ) !# &) !#




Figure 5. Forward Voltage

Figure 6. Clamping Voltage versus Peak


Pulse Current (Reverse Direction)

AA* &/' %& + "#


"  &


' *' %& +"  &

,

4&
!# &) !#


Figure 3. Pulse Derating Curve

,

,

,

&* & 4   & "  





,
2.5 ms SQUARE WAVE

,

,

,

,

2,



!* ' %& + #& ) !# &) !#




Figure 7. Clamping Voltage versus Peak


Pulse Current (Forward Direction)

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225





$,+&   
 ()*$ " #E 
    % 
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of siliconoxide passivated junctions. All this in an axiallead,
transfermolded plastic package that offers protection in all common
environmental conditions.
Specification Features:

Zener Voltage Range 3.6 V to 30 V


ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package

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Cathode

Mechanical Characteristics:
CASE: Void free, transfermolded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

Anode

AXIAL LEAD
CASE 59
PLASTIC

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

MARKING DIAGRAM
L
MZP4
7xxA
YYWW

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Max. Steady State Power Dissipation


@ TL = 75C, Lead Length = 3/8
Derate above 75C

PD

24

mW/C

Steady State Power Dissipation


@ TA = 50C
Derate above 50C

PD

6.67

mW/C

TJ, Tstg

65 to
+200

Operating and Storage


Temperature Range

L
= Assembly Location
MZP47xxA = Device Code
= (See Table Next Page)
YY
= Year
WW
= Work Week

ORDERING INFORMATION
Device

Package

Shipping

MZP47xxA

Axial Lead

2000 Units/Box

MZP47xxARL

Axial Lead

6000/Tape & Reel

MZP47xxATA

Axial Lead

4000/Ammo Pack

MZP47xxARR1 

Axial Lead

2000/Tape & Reel

MZP47xxARR2 

Axial Lead

2000/Tape & Reel

 Polarity band up with cathode lead off first


 Polarity band down with cathode lead off first

Semiconductor Components Industries, LLC, 2002

February, 2002 Rev. 2

226

Publication Order Number:


MZP4729A/D

MZP4729A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)


Symbol

IF

Parameter

VZ

Reverse Zener Voltage @ IZT

IZT

Reverse Current

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IR

Reverse Leakage Current @ VR

VR

Breakdown Voltage

IF

Forward Current

VF

Forward Voltage @ IF

IR

Surge Current @ TA = 25C

VZ VR

V
IR VF
IZT

Zener Voltage Regulator

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227

MZP4729A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
Zener Voltage (Note 2)
VZ (Volts)

Zener Impedance (Note 3)

@ IZT

ZZT @ IZT

Leakage Current

ZZK @ IZK

IR @ VR

IR
(Note 4)

Device
(Note 1)

Device
Marking

Min

Nom

Max

mA

mA

A Max

Volts

mA

MZP4729A
MZP4734A
MZP4735A
MZP4736A
MZP4737A

MZP4729A
MZP4734A
MZP4735A
MZP4736A
MZP4737A

3.42
5.32
5.89
6.46
7.13

3.6
5.6
6.2
6.8
7.5

3.78
5.88
6.51
7.14
7.88

69
45
41
37
34

10
5
2
3.5
4

400
600
700
700
700

1
1
1
1
0.5

100
10
10
10
10

1
2
3
4
5

1260
810
730
660
605

MZP4738A
MZP4740A
MZP4741A
MZP4744A
MZP4745A

MZP4738A
MZP4740A
MZP4741A
MZP4744A
MZP4745A

7.79
9.50
10.45
14.25
15.20

8.2
10
11
15
16

8.61
10.50
11.55
15.75
16.80

31
25
23
17
15.5

4.5
7
8
14
16

700
700
700
700
700

0.5
0.25
0.25
0.25
0.25

10
10
5
5
5

6
7.6
8.4
11.4
12.2

550
454
414
304
285

MZP4746A
MZP4749A
MZP4750A
MZP4751A
MZP4752A

MZP4746A
MZP4749A
MZP4750A
MZP4751A
MZP4752A

17.10
22.80
25.65
28.50
31.35

18
24
27
30
33

18.90
25.20
28.35
31.50
34.65

14
10.5
9.5
8.5
7.5

20
25
35
40
45

750
750
750
1000
1000

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

13.7
18.2
20.6
22.8
25.1

250
190
170
150
135

MZP4753A

MZP4753A

34.20

36

37.80

7.0

50

1000

0.25

27.4

125

1. TOLERANCE AND TYPE NUMBER DESIGNATION


The type numbers listed have a standard tolerance on the nominal zener voltage of 5%.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30C 1C,
3/8 from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
4. SURGE CURRENT (IR) NONREPETITIVE
The rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.

PD, MAXIMUM STEADY STATE


POWER DISSIPATION (WATTS)


# 1 :2

# 1 #&+ #) (
 (&
/

# 1 :2




# 1 









2    
TL, LEAD TEMPERATURE (C)

2

Figure 1. Power Temperature Derating Curve

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228



MZP4729A Series
8#*+ &
  ( &# 

&
8" 9 9#&+:%




3





,3
,

+ 1,
,
,

+" 5 5#* + 1:

,
,

 < 4#% ,


+* ( &#


 " ! 
& #&4#
 &5 #&+ #) ( #,

+1

,
, ,



,

,

,

,

,

,
,
,
*   
+


,

,

)# "#
 8# 1 8#  /
   ! "#

8# 1 8# *+
,



*
/ &/
" ) % %&


/

 * !
#&/&) &@0!
&

'+#,(& , &4#

Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

 &)"#&
    !
%&!'
8616 
  &# "#










,

, , ,

 


%* "#
 %+ ( 

  




,
,
,
,
,
,
,

,
,
,
,



& 1 

& 1 

Figure 3. Maximum Surge Power



 
 &# !7 !#






Figure 4. Typical Reverse Leakage

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229



MZP4729A Series
APPLICATION NOTE
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.

Since the actual voltage available from a given zener


diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:

TJL = JL PD

For worst-case design, using expected limits of IZ, limits


of PD and the extremes of TJ (TJ) may be estimated.
Changes in voltage, VZ, can then be found from:

TL = LA PD + TA

LA is the lead-to-ambient thermal resistance (C/W) and PD


is the power dissipation. The value for LA will vary and
depends on the device mounting method. LA is generally
3040C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:

V = VZ TJ

VZ, the zener voltage temperature coefficient, is found


from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.

TJ = TL + TJL

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230

MZP4729A Series
TEMPERATURE COEFFICIENT RANGES




2


&)



.
.

!7*   & " '' !:0

!7*   & " '' !:0

(90% of the Units are in the Ranges Indicated)


3
2
;

!7* 7 !# &) 0 7 !#





















!7* 7 !# &) 0 7 !#


Figure 5. Units To 12 Volts



Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT














*7 "  &


7

*7 "  &


7

(Figures 7, 8 and 9)






,
,
,
,




3
!7* 7 !# &) !#







,
,
,
,









*7 "  &


7




,
,
,








!7* 7 !# &) !#


;



Figure 8. VZ = 12 thru 82 Volts



8#*8" 9 9#&+ ( &# 



& :%

Figure 7. VZ = 3.3 thru 10 Volts





3
2
!7* 7 !# &) !#


2
3


#






 & 5 & ( '


+"  
( ")(
( & (+ #&+




Figure 9. VZ = 100 thru 400 Volts

:2

:
:2
:
:2
:
#* #&+ #) (  (&
/ (

3:2

Figure 10. Typical Thermal Resistance

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231

8 7
   
Preferred Devices

 
 
    % 
SC89 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring ESD protection capability. They are intended for
use in voltage and ESD sensitive equipment such as computers,
printers, business machines, communication systems, medical
equipment and other applications. Their dual junction common anode
design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.

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PIN 1. CATHODE
2. CATHODE
3. ANODE

1
3
2

MARKING
DIAGRAM

Specification Features:

SC89 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

Standard Zener Breakdown Voltage Ranges


ESD Rating of Class N (exceeding 16 kV) per the Human

Body Model and IEC6100042


Low Leakage < 5.0 mA

Lx D

SC89
CASE 463C
STYLE 4

1
Lx
D

2
= Device Code
= Date Code

ORDERING INFORMATION

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94, V0


LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any

Device

Package

Shipping

NZL5V6AXV3T1

SC89

3000/Tape & Reel

NZL6V8AXV3T1

SC89

3000/Tape & Reel

NZL7V5AXV3T1

SC89

3000/Tape & Reel

QUALIFIED MAX REFLOW TEMPERATURE: 260C

Device Meets MSL 1 Requirements

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the table on page 233 of this data sheet.

This document contains information on a new product. Specifications and information


herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2004

August, 2004 Rev. 1

232

Publication Order Number:


NZL5V6AXV3T1/D

NZL5V6AXV3T1 Series
MAXIMUM RATINGS
Symbol

Value

Unit

Total Power Dissipation on FR5 Board (Note 5) @ TA = 25C


Derate above 25C

Rating

PD

240
1.9

mW
mW/C

Thermal Resistance Junction to Ambient

RJA

525

C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

TL

260

Lead Solder Temperature Maximum (10 Second Duration)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
5. FR5 board with minimum recommended mounting pad.
*Other voltages may be available upon request.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter

Symbol
VRWM
IR

IF

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM

VBR
IT

VC VBR VRWM

IR VF
IT

Breakdown Voltage @ IT
Test Current

QVBR

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IPP

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max @ IF = 10 mA for all types)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
Breakdown Voltage
VBR (Note 6) (V)

Zener Impedance
@ IzT

ZZT @ IZT

ZZK @ IZK

Device

Device
Marking

VRWM
Volts

IR @ VRWM
mA

Min

Nom

Max

mA

mA

NZL5V6AXV3T1

L0

3.0

5.0

5.32

5.6

5.88

5.0

40

200

1.0

NZL6V8AXV3T1

L2

4.5

1.0

6.46

6.8

7.14

5.0

15

100

1.0

NZL7V5AXV3T1

L3

5.0

1.0

7.12

7.5

7.88

5.0

15

100

1.0

NZL15VAX3T1

L8

12.0

1.0

14.25

15

15.75

5.0

15

100

1.0

6. VBR measured at pulse test current IT at an ambient temperature of 25C.


7. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.

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233

NZL5V6AXV3T1 Series

8.0

250

7.5
NZL5V6AXV3T1

200

7.0
NZL5V6AXV3T1
IR (nA)

BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT)

TYPICAL CHARACTERISTICS

6.5
6.0

NZL6V8AXV3T1

150

100

5.5

NZL6V8AXV3T1
50

5.0
4.5
55

+ 45
+ 95
TEMPERATURE (C)

0
55

+ 145

Figure 1. Typical Breakdown Voltage


versus Temperature

+ 45
+ 95
TEMPERATURE (C)

+ 145

Figure 2. Typical Leakage Current


versus Temperature

(Upper curve for each voltage is bidirectional mode,


lower curve is unidirectional mode)

50

300
PD, POWER DISSIPATION (mW)

45
CAPACITANCE (pF)

40
35
30
5.6 V

25
20
15

6.8 V

10
5
0
0

0.4

0.8

1.2

1.6

250
200
150
100
FR5 BOARD
50
0

2.0

TEMPERATURE (C)

Figure 3. Typical Capacitance versus Bias Voltage

25

50

75
100
125
TEMPERATURE (C)

150

175

Figure 4. Steady State Power Derating Curve

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234

NZL5V6AXV3T1 Series
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in an SC89
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples


of TVS applications are illustrated below.

A
KEYBOARD
TERMINAL
PRINTER
ETC.

B
C

I/O

FUNCTIONAL
DECODER

GND
NZLxxxAXV3T1

Figure 5. Computer Interface Protection

VDD
VGG
ADDRESS BUS

RAM

ROM

DATA BUS
CPU

I/O

NZLxxxAXV3T1
CLOCK

CONTROL BUS

GND
NZLxxxAXV3T1

Figure 6. Microprocessor Protection

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235

=/   
     
" #*$   
 
  
Unidirectional*

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The P6KE6.8A series is designed to protect voltage sensitive


components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.

Cathode

Anode

Specification Features:

Working Peak Reverse Voltage Range 5.8 to 171 V


Peak Power 600 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A above 10 V
Maximum Temperature Coefficient Specified
UL 497B for Isolated Loop Circuit Protection
Response Time is typically < 1 ns

AXIAL LEAD
CASE 17
STYLE 1

Mechanical Characteristics:
CASE: Void-free, Transfer-molded, Thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

L
P6KE
xxxA
YYWW

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING:

L = Assembly Location
P6KExxxA = ON Device Code
YY = Year
WW = Work Week

230C, 1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ TL 25C
Steady State Power Dissipation
@ TL 75C, Lead Length = 3/8
Derated above TL = 75C

Symbol

Value

Unit

PPK

600

Watts

PD

5.0

Watts

50

mW/C

Thermal Resistance, JunctiontoLead

RqJL

20

C/W

Forward Surge Current (Note 2.)


@ TA = 25C

IFSM

100

Amps

TJ, Tstg

55 to
+175

Operating and Storage


Temperature Range

ORDERING INFORMATION
Device

Package

Shipping

P6KExxxA

Axial Lead

1000 Units/Box

P6KExxxARL

Axial Lead

4000/Tape & Reel

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see P6KE6.8CA P6KE200CA for Bidirectional devices.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 5

236

Publication Order Number:


P6KE6.8A/D

P6KE6.8A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 11) = 50 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

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237

P6KE6.8A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 11) = 50 A)
Breakdown Voltage

VC @ IPP (Note 10)

VRWM
(Note 8)

IR @ VRWM

@ IT

VC

IPP

QVBR

Volts

Min

Nom

Max

mA

Volts

%/C

VBR

(Note 9) (Volts)

Device

Device
Marking

P6KE6.8A
P6KE7.5A
P6KE8.2A
P6KE9.1A

P6KE6.8A
P6KE7.5A
P6KE8.2A
P6KE9.1A

5.8
6.4
7.02
7.78

1000
500
200
50

6.45
7.13
7.79
8.65

6.80
7.51
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

10.5
11.3
12.1
13.4

57
53
50
45

0.057
0.061
0.065
0.068

P6KE10A
P6KE11A
P6KE12A
P6KE13A

P6KE10A
P6KE11A
P6KE12A
P6KE13A

8.55
9.4
10.2
11.1

10
5
5
5

9.5
10.5
11.4
12.4

10
11.05
12
13.05

10.5
11.6
12.6
13.7

1
1
1
1

14.5
15.6
16.7
18.2

41
38
36
33

0.073
0.075
0.078
0.081

P6KE15A
P6KE16A
P6KE18A
P6KE20A

P6KE15A
P6KE16A
P6KE18A
P6KE20A

12.8
13.6
15.3
17.1

5
5
5
5

14.3
15.2
17.1
19

15.05
16
18
20

15.8
16.8
18.9
21

1
1
1
1

21.2
22.5
25.2
27.7

28
27
24
22

0.084
0.086
0.088
0.09

P6KE22A
P6KE24A
P6KE27A
P6KE30A

P6KE22A
P6KE24A
P6KE27A
P6KE30A

18.8
20.5
23.1
25.6

5
5
5
5

20.9
22.8
25.7
28.5

22
24
27.05
30

23.1
25.2
28.4
31.5

1
1
1
1

30.6
33.2
37.5
41.4

20
18
16
14.4

0.092
0.094
0.096
0.097

P6KE33A
P6KE36A
P6KE39A
P6KE43A

P6KE33A
P6KE36A
P6KE39A
P6KE43A

28.2
30.8
33.3
36.8

5
5
5
5

31.4
34.2
37.1
40.9

33.05
36
39.05
43.05

34.7
37.8
41
45.2

1
1
1
1

45.7
49.9
53.9
59.3

13.2
12
11.2
10.1

0.098
0.099
0.1
0.101

P6KE47A
P6KE51A
P6KE56A
P6KE62A

P6KE47A
P6KE51A
P6KE56A
P6KE62A

40.2
43.6
47.8
53

5
5
5
5

44.7
48.5
53.2
58.9

47.05
51.05
56
62

49.4
53.6
58.8
65.1

1
1
1
1

64.8
70.1
77
85

9.3
8.6
7.8
7.1

0.101
0.102
0.103
0.104

P6KE68A
P6KE75A
P6KE82A
P6KE91A

P6KE68A
P6KE75A
P6KE82A
P6KE91A

58.1
64.1
70.1
77.8

5
5
5
5

64.6
71.3
77.9
86.5

68
75.05
82
91

71.4
78.8
86.1
95.5

1
1
1
1

92
103
113
125

6.5
5.8
5.3
4.8

0.104
0.105
0.105
0.106

P6KE100A
P6KE110A
P6KE120A
P6KE130A

P6KE100A
P6KE110A
P6KE120A
P6KE130A

85.5
94
102
111

5
5
5
5

95
105
114
124

100
110.5
120
130.5

105
116
126
137

1
1
1
1

137
152
165
179

4.4
4
3.6
3.3

0.106
0.107
0.107
0.107

P6KE150A
P6KE150A
128
5
143
150.5
158
1
207
2.9
0.108
P6KE160A
P6KE160A
136
5
152
160
168
1
219
2.7
0.108
P6KE170A
P6KE170A
145
5
162
170.5
179
1
234
2.6
0.108
P6KE180A
P6KE180A
154
5
171
180
189
1
246
2.4
0.108
P6KE200A
P6KE200A
171
5
190
200
210
1
274
2.2
0.108
8. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
9. VBR measured at pulse test current IT at an ambient temperature of 25C
10. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
11. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

http://onsemi.com
238

PPK , PEAK POWER (kW)

100

NONREPETITIVE PULSE
WAVEFORM SHOWN IN
FIGURE 4

10

0.1
0.1 s

1 s

10 s

100 s

1 ms

PEAK PULSE DERATING IN % OF


PEAK POWER OR CURRENT @ TA = 25 C

P6KE6.8A Series

100
80
60
40
20
0
0

10 ms

25

50

75

100 125 150 175

tP, PULSE WIDTH

Figure 1. Pulse Rating Curve

Figure 2. Pulse Derating Curve

tr 10 s
10,000

PEAK VALUE IPP

VALUE (%)

C, CAPACITANCE (pF)

100
MEASURED @
ZERO BIAS
1000

HALF VALUE

PULSE WIDTH (tp) IS


DEFINED AS THAT
POINT WHERE THE
PEAK CURRENT
DECAYS TO 50% OF IPP.
IPP
2

50
MEASURED @
VRWM

100

10

0.1

tP

1
10
100
VBR, BREAKDOWN VOLTAGE (VOLTS)

1000

Figure 3. Capacitance versus Breakdown Voltage

3/8

4
3
2

Figure 4. Pulse Waveform

3/8
5

2
3
t, TIME (ms)

1
0.7
0.5
DERATING FACTOR

PD, STEADY STATE POWER DISSIPATION (WATTS)

200

TA, AMBIENT TEMPERATURE (C)

0.3
0.2

PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03

100 s

0.02
1
0
0

25

50
75 100 125 150 175
TL, LEAD TEMPERATURE C)

200

0.01
0.1

Figure 5. Steady State Power Derating

10 s
0.2

0.5

2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 6. Typical Derating Factor for Duty Cycle

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239

P6KE6.8A Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 7.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 8. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The P6KE6.8A series
has very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

TYPICAL PROTECTION CIRCUIT

Zin

LOAD

Vin

Vin (TRANSIENT)

VL

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT


t

Figure 7.

Figure 8.

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240

P6KE6.8A Series
UL RECOGNITION*
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and
several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their protector
category.

The entire series including the bidirectional CA suffix has


Underwriters Laboratory Recognition for the classification
of protectors (QVGV2) under the UL standard for safety
497B and File #E 116110. Many competitors only have one
or two devices recognized or have recognition in a
non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage

*Applies to P6KE6.8A, CA P6KE200A, CA.

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241

!
  
        

    


Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:

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PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.478 VOLTS
600 WATT PEAK POWER

Working Peak Reverse Voltage Range 9.4 to 77.8 V


Standard Zener Breakdown Voltage Range 11 to 91 V
Peak Power 600 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
SMB
CASE 403A
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

MARKING DIAGRAM

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any

YWW
xxC

MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2.)
Derate Above 75C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3.) @ TA = 25C
Derate Above 25C
Thermal Resistance from Junction
to Ambient
Operating and Storage
Temperature Range

Symbol

Value

Unit

PPK

600

PD

3.0

RqJL

40
25

mW/C
C/W

PD

0.55

RqJA

4.4
226

mW/C
C/W

65 to
+150

TJ, Tstg

1. 10 X 1000 ms, nonrepetitive


2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 4

242

Y
WW
xxC

= Year
= Work Week
= Specific Device Code
= (See Table Next Page)

ORDERING INFORMATION
Device {

Package

Shipping

P6SMBxxCAT3

SMB

2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor


Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

The T3 suffix refers to a 13 inch reel.

Publication Order Number:


P6SMB11CAT3/D

P6SMB11CAT3 Series
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


Symbol

IPP

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR

IT
VC VBR VRWM IR
IR V
V
V
IT RWM BR C

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR
IT

Breakdown Voltage @ IT
IPP

Test Current

QVBR

BiDirectional TVS

Maximum Temperature Coefficient of VBR

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage

VRWM
(Note 12)

IR @VRWM

Volts

VC @ IPP (Note 14)

VBR Volts (Note 13)

@ IT

VC

IPP

QVBR

Min

Nom

Max

mA

Volts

Amps

%/C

Device

Device
Marking

P6SMB11CAT3
P6SMB12CAT3
P6SMB13CAT3

11C
12C
13C

9.4
10.2
11.1

5
5
5

10.5
11.4
12.4

11.05
12
13.05

11.6
12.6
13.7

1
1
1

15.6
16.7
18.2

38
36
33

0.075
0.078
0.081

P6SMB15CAT3
P6SMB16CAT3
P6SMB18CAT3
P6SMB20CAT3

15C
16C
18C
20C

12.8
13.6
15.3
17.1

5
5
5
5

14.3
15.2
17.1
19

15.05
16
18
20

15.8
16.8
18.9
21

1
1
1
1

21.2
22.5
25.2
27.7

28
27
24
22

0.084
0.086
0.088
0.09

P6SMB22CAT3
P6SMB24CAT3
P6SMB27CAT3
P6SMB30CAT3

22C
24C
27C
30C

18.8
20.5
23.1
25.6

5
5
5
5

20.9
22.8
25.7
28.5

22
24
27.05
30

23.1
25.2
28.4
31.5

1
1
1
1

30.6
33.2
37.5
41.4

20
18
16
14.4

0.09
0.094
0.096
0.097

P6SMB33CAT3
P6SMB36CAT3
P6SMB39CAT3
P6SMB43CAT3

33C
36C
39C
43C

28.2
30.8
33.3
36.8

5
5
5
5

31.4
34.2
37.1
40.9

33.05
36
39.05
43.05

34.7
37.8
41
45.2

1
1
1
1

45.7
49.9
53.9
59.3

13.2
12
11.2
10.1

0.098
0.099
0.1
0.101

P6SMB47CAT3
P6SMB51CAT3
P6SMB56CAT3
P6SMB62CAT3

47C
51C
56C
62C

40.2
43.6
47.8
53

5
5
5
5

44.7
48.5
53.2
58.9

47.05
51.05
56
62

49.4
53.6
58.8
65.1

1
1
1
1

64.8
70.1
77
85

9.3
8.6
7.8
7.1

0.101
0.102
0.103
0.104

P6SMB68CAT3
68C
58.1
5
64.6
68
71.4
1
92
6.5
0.104
P6SMB75CAT3
75C
64.1
5
71.3
75.05
78.8
1
103
5.8
0.105
P6SMB82CAT3
82C
70.1
5
77.9
82
86.1
1
113
5.3
0.105
P6SMB91CAT3
91C
77.8
5
86.5
91
95.5
1
125
4.8
0.106
12. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
13. VBR measured at pulse test current IT at an ambient temperature of 25C.
14. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group.

http://onsemi.com
243

P6SMB11CAT3 Series

    !
"#
 %&!'

(%  ')"  

"#
 %+ (   
+'+ &

(&  %(  ( &/


"  +&5
 - '  ,

6  




&/ !&#" . 

!&#"-

* &/ % ?%



(&#' !&#" .



,

, 

 

 

 

 

 

 * "#
 %+ (

*   

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform


&/ "#
+ & )-'
&/ %  "  0 & 1 

TYPICAL PROTECTION CIRCUIT


7 



2

! 










3







&* & 4   & "  

Figure 3. Pulse Derating Curve

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244

#&+

!#

P6SMB11CAT3 Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

http://onsemi.com
245

P6SMB11CAT3 Series

Vin (TRANSIENT)

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 4.

Figure 5.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 s

0.02
10 s
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 6. Typical Derating Factor for Duty Cycle

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

http://onsemi.com
246

!
  
        

    


Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:

Working Peak Reverse Voltage Range 5.8 to 171 V


Standard Zener Breakdown Voltage Range 6.8 to 200 V
Peak Power 600 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns

http://onsemi.com

PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8171 VOLTS
600 WATT PEAK POWER

Cathode

Anode

SMB
CASE 403A
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

readily solderable
MARKING DIAGRAM

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

YWW
xxxA
Y
WW
xxxA

MAXIMUM RATINGS
Please See the Table on the Following Page
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.

= Year
= Work Week
= Specific Device Code
= (See Table on Page

249)

ORDERING INFORMATION
Device {

Package

Shipping

P6SMBxxxAT3

SMB

2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor


Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

The T3 suffix refers to a 13 inch reel.

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 5

247

Publication Order Number:


P6SMB6.8AT3/D

P6SMB6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction to Lead

Symbol

Value

Unit

PPK

600

PD

3.0

RqJL

40
25

mW/C
C/W
W
mW/C
C/W
A

DC Power Dissipation (Note 3) @ TA = 25C


Derate Above 25C
Thermal Resistance from Junction to Ambient

PD
RqJA

0.55
4.4
226

Forward Surge Current (Note 4) @ TA = 25C

IFSM

100

Operating and Storage Temperature Range


TJ, Tstg
65 to +150
1. 10 X 1000 ms, nonrepetitive
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted, VF = 3.5 V Max. @


IF (Note 4) = 30 A) (Note 5)
Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR
IF

IF

VC VBR VRWM
IR VF
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current

IPP

Maximum Temperature Coefficient of VBR


Forward Current

UniDirectional TVS

VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive
duty cycle

http://onsemi.com
248

P6SMB6.8AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage

VC @ IPP (Note 8)

VRWM
(Note 6)

IR @VRWM

@ IT

VC

IPP

QVBR

Volts

Min

Nom

Max

mA

Volts

Amps

%/C

VBR Volts (Note 7)

Device

Device
Marking

P6SMB6.8AT3
P6SMB7.5AT3
P6SMB8.2AT3
P6SMB9.1AT3

6V8A
7V5A
8V2A
9V1A

5.8
6.4
7.02
7.78

1000
500
200
50

6.45
7.13
7.79
8.65

6.8
7.51
8.2
9.1

7.14
7.88
8.61
9.55

10
10
10
1

10.5
11.3
12.1
13.4

57
53
50
45

0.057
0.061
0.065
0.068

P6SMB10AT3
P6SMB11AT3
P6SMB12AT3
P6SMB13AT3

10A
11A
12A
13A

8.55
9.4
10.2
11.1

10
5
5
5

9.5
10.5
11.4
12.4

10
11.05
12
13.05

10.5
11.6
12.6
13.7

1
1
1
1

14.5
15.6
16.7
18.2

41
38
36
33

0.073
0.075
0.078
0.081

P6SMB15AT3
P6SMB16AT3
P6SMB18AT3
P6SMB20AT3

15A
16A
18A
20A

12.8
13.6
15.3
17.1

5
5
5
5

14.3
15.2
17.1
19

15.05
16
18
20

15.8
16.8
18.9
21

1
1
1
1

21.2
22.5
25.2
27.7

28
27
24
22

0.084
0.086
0.088
0.09

P6SMB22AT3
P6SMB24AT3
P6SMB27AT3
P6SMB30AT3

22A
24A
27A
30A

18.8
20.5
23.1
25.6

5
5
5
5

20.9
22.8
25.7
28.5

22
24
27.05
30

23.1
25.2
28.4
31.5

1
1
1
1

30.6
33.2
37.5
41.4

20
18
16
14.4

0.092
0.094
0.096
0.097

P6SMB33AT3
P6SMB36AT3
P6SMB39AT3
P6SMB43AT3

33A
36A
39A
43A

28.2
30.8
33.3
36.8

5
5
5
5

31.4
34.2
37.1
40.9

33.05
36
39.05
43.05

34.7
37.8
41
45.2

1
1
1
1

45.7
49.9
53.9
59.3

13.2
12
11.2
10.1

0.098
0.099
0.1
0.101

P6SMB47AT3
P6SMB51AT3
P6SMB56AT3
P6SMB62AT3

47A
51A
56A
62A

40.2
43.6
47.8
53

5
5
5
5

44.7
48.5
53.2
58.9

47.05
51.05
56
62

49.4
53.6
58.8
65.1

1
1
1
1

64.8
70.1
77
85

9.3
8.6
7.8
7.1

0.101
0.102
0.103
0.104

P6SMB68AT3
P6SMB75AT3
P6SMB82AT3
P6SMB91AT3

68A
75A
82A
91A

58.1
64.1
70.1
77.8

5
5
5
5

64.6
71.3
77.9
86.5

68
75.05
82
91

71.4
78.8
86.1
95.5

1
1
1
1

92
103
113
125

6.5
5.8
5.3
4.8

0.104
0.105
0.105
0.106

P6SMB100AT3
P6SMB110AT3
P6SMB120AT3
P6SMB130AT3

100A
110A
120A
130A

85.5
94
102
111

5
5
5
5

95
105
114
124

100
110.5
120
130.5

105
116
126
137

1
1
1
1

137
152
165
179

4.4
4.0
3.6
3.3

0.106
0.107
0.107
0.107

P6SMB150AT3
P6SMB160AT3
P6SMB170AT3
P6SMB180AT3

150A
160A
170A
180A

128
136
145
154

5
5
5
5

143
152
162
171

150.5
160
170
180

158
168
179
189

1
1
1
1

207
219
234
246

2.9
2.7
2.6
2.4

0.108
0.108
0.108
0.108

P6SMB200AT3
200A
171
5
190
200
210
1
274
2.2
0.108
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3.

http://onsemi.com
249

P6SMB6.8AT3 Series

    !
"#
 %&!'

(%  ')"  

"#
 %+ (   
+'+ &

(&  %(  ( &/


"  +&5
 - '  ,

6  




&/ !&#" . 

!&#"-

* &/ % ?%



(&#' !&#" .



,

, 

 

 

 

 

 

 * "#
 %+ (

*   

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform



TYPICAL PROTECTION CIRCUIT


7 



2

#&+

! 










3







&* & 4   & "  

Figure 3. Pulse Derating Curve

C, CAPACITANCE (pF)

&/ "#
+ & )-'
&/ %  "  0 & 1 

10,000
MEASURED @
ZERO BIAS
1000
MEASURED @ VRWM
100

10
0.1

1
10
100
VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 4. Capacitance versus Breakdown


Voltage

http://onsemi.com
250

1000

!#

P6SMB6.8AT3 Series
APPLICATION NOTES
RESPONSE TIME

minimum lead lengths and placing the suppressor device as


close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions


and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

http://onsemi.com
251

P6SMB6.8AT3 Series

Vin (TRANSIENT)

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 5.

Figure 6.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 s

0.02
10 s
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 7. Typical Derating Factor for Duty Cycle

UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

http://onsemi.com
252

    
     
))%!E   

  
 
Unidirectional

http://onsemi.com

The SA5.0A series is designed to protect voltage sensitive


components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SA5.0A series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.

Cathode

Anode

Specification Features:

Working Peak Reverse Voltage Range 5.0 to 170 V


Peak Power 500 Watts @ 1.0 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 1 mA above 8.5 V
UL 497B for Isolated Loop Circuit Protection
Maximum Temperature Coefficient Specified
Response Time is typically < 1.0 ns

AXIAL LEAD
CASE 59
PLASTIC

Mechanical Characteristics:
CASE: Void-free, Transfer-molded, Thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

L
SA
xxxA
YYWW

readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING: 230C,

L = Assembly Location
SAxxxA = ON Device Code
YY = Year
WW = Work Week

1/16 from the case for 10 seconds


POLARITY: Cathode indicated by polarity band.
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
@ TL 25C
Steady State Power Dissipation
@ TL 75C, Lead Length = 3/8
Derated above TL = 75C

ORDERING INFORMATION
Symbol

Value

Unit

PPK

500

Watts

PD

3.0

Watts

30

mW/C

Thermal Resistance, JunctiontoLead

RqJL

33.3

C/W

Forward Surge Current (Note 2)


@ TA = 25C

IFSM

70

Amps

TJ, Tstg

55 to +175

Operating and Storage Temperature Range

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute.

Semiconductor Components Industries, LLC, 2004

April, 2004 Rev. 9

253

Package

Shipping

SAxxxA

Axial Lead

1000 Units / Box

SAxxxARL*

Axial Lead

5000 / Tape & Reel

SAxxxALF**

Axial Lead

2000 Units / Box

Device

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*SA8.0A, SA130A, and SA160A Not Available in
5000/Tape & Reel.
** Lead formed device.

Publication Order Number:


SA5.0A/D

SA5.0A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 35 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Variation of VBR

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 35 A)
Breakdown Voltage

VRWM
(Note 3)

IR @ VRWM

Volts

mA

Min

Nom

VC @ IPP (Note 5)
@ IT

VC

IPP

QVBR

Max

mA

Volts

mV/C

VBR (Note 4) (Volts)

Device

Device
Marking

SA5.0A

SA5.0A

600

6.4

6.7

10

9.2

54.3

SA6.0A

SA6.0A

600

6.67

7.02

7.37

10

10.3

48.5

SA7.0A

SA7.0A

150

7.78

8.19

8.6

10

12

41.7

SA7.5A

SA7.5A

7.5

50

8.33

8.77

9.21

12.9

38.8

SA8.0A*

SA8.0A*

25

8.89

9.36

9.83

13.6

36.7

SA8.5A

SA8.5A

8.5

9.44

9.92

10.4

14.4

34.7

SA9.0A

SA9.0A

10

10.55

11.1

15.4

32.5

SA10A

SA10A

10

11.1

11.7

12.3

17

29.4

10

SA11A

SA11A

11

12.2

12.85

13.5

18.2

27.4

11

SA12A

SA12A

12

13.3

14

14.7

19.9

25.1

12

SA13A

SA13A

13

14.4

15.15

15.9

21.5

23.2

13

SA14A

SA14A

14

15.6

16.4

17.2

23.2

21.5

14

SA15A

SA15A

15

16.7

17.6

18.5

24.4

20.6

16

SA16A

SA16A

16

17.8

18.75

19.7

26

19.2

17

SA17A

SA17A

17

18.9

19.9

20.9

27.6

18.1

19

SA18A

SA18A

18

20

21.05

22.1

29.2

17.2

20

SA20A

SA20A

20

22.2

23.35

24.5

32.4

15.4

23

SA22A

SA22A

22

24.4

25.65

26.9

35.5

14.1

25

SA24A

SA24A

24

26.7

28.1

29.5

38.9

12.8

28

SA26A

SA26A

26

28.9

30.4

31.9

42.1

11.9

30

SA28A

SA28A

28

31.1

32.75

34.4

45.4

11

31

SA30A

SA30A

30

33.3

35.05

36.8

48.4

10.3

36

NOTE:

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for
future use and best overall value.
3. MiniMOSORB transients suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which
should be equal to or greater than the dc or continuous peak operating voltage level.
4. VBR measured at pulse test current IT at an ambient temperature of 25C.
5. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
*Not Available in the 5000/Tape & Reel.

http://onsemi.com
254

SA5.0A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 35 A)

Device

Device
Marking

Breakdown Voltage

VC @ IPP (Note 5)

VRWM
(Note 3)

IR @ VRWM

@ IT

VC

IPP

QVBR

Volts

mA

Min

Nom

Max

mA

Volts

mV/C

VBR (Note 4) (Volts)

SA33A

SA33A

33

36.7

38.65

40.6

53.3

9.4

39

SA36A

SA36A

36

40

42.1

44.2

58.1

8.6

41

SA40A

SA40A

40

44.4

46.55

49.1

64.5

7.8

46

SA43A

SA43A

43

47.8

50.3

52.8

69.4

7.2

50

SA45A

SA45A

45

50

52.65

55.3

72.7

6.9

52

SA48A

SA48A

48

53.3

56.1

58.9

77.4

6.5

56

SA51A

SA51A

51

56.7

59.7

62.7

82.4

6.1

61

SA58A

SA58A

58

64.4

67.8

71.2

93.6

5.3

70

SA60A

SA60A

60

66.7

70.2

73.7

96.8

5.2

71

SA64A

SA64A

64

71.1

74.85

78.6

103

4.9

76

SA64ALF

SA64A

64

71.1

74.85

78.6

103

4.9

76

SA70A

SA70A

70

77.8

81.9

86

113

4.4

85

SA78A

SA78A

78

86.7

91.25

95.8

126

4.0

95

SA90A

SA90A

90

100

105.5

111

146

3.4

110

SA100A

SA100A

100

111

117

123

162

3.1

123

SA110A

SA110A

110

122

128.5

135

177

2.8

133

SA120A

SA120A

120

133

140

147

193

2.5

146

SA130A*

SA130A*

130

144

151.5

159

209

2.4

158

SA150A

SA150A

150

167

176

185

243

2.1

184

SA160A*

SA160A*

160

178

187.5

197

259

1.9

196

SA170A

SA170A

170

189

199

209

275

1.8

208

NOTE:

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for
future use and best overall value.
3. MiniMOSORB transients suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which
should be equal to or greater than the dc or continuous peak operating voltage level.
4. VBR measured at pulse test current IT at an ambient temperature of 25C.
5. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
*Not Available in the 5000/Tape & Reel.

http://onsemi.com
255

SA5.0A Series
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T A = 25 C

PPK , PEAK POWER (kW)

100

NONREPETITIVE PULSE
WAVEFORM SHOWN IN
FIGURE 4
10

0.1
0.1 ms

1 ms

10 ms

100 ms

1 ms

100
80
60
40
20
0

10 ms

tp, PULSE WIDTH

25

Figure 1. Pulse Rating Curve

50 75 100 125 150 175 200


TA, AMBIENT TEMPERATURE (C)

Figure 2. Pulse Derating Curve

tr 10 ms
100
VALUE (%)

C, CAPACITANCE (pF)

10,000
MEASURED @
ZERO BIAS

1000

100

PEAK VALUE IPP

HALF VALUE

IPP
2

50

MEASURED @
(VRWM)

10
0.1

PULSE WIDTH (tp) IS


DEFINED AS THAT POINT
WHERE THE PEAK
CURRENT DECAYS TO
50% OF IPP.

tP

10

100

1000

t, TIME (ms)

Figure 3. Capacitance versus Breakdown Voltage

Figure 4. Pulse Waveform

PD, STEADY STATE POWER DISSIPATION (WATTS)

VBR, BREAKDOWN VOLTAGE (VOLTS)

5
4

3/8
3/8

0
0 25 50 75 100 125 150 175 200
TL, LEAD TEMPERATURE (C)

Figure 5. Steady State Power Derating

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256

SA5.0A Series
UL RECOGNITION*
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and
several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their protector
category.

The entire series including the bidirectional CA suffix has


Underwriters Laboratory Recognition for the classification
of protectors (QVGV2) under the UL standard for safety
497B and File #E 116110. Many competitors only have one
or two devices recognized or have recognition in a
non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage

*Applies to SA5.0A, CA SA170A, CA.

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257

(
   
Preferred Device

  
  (6
SOD323 Zeners for ESD Protection
These Zener diodes are designed for applications requiring transient
overvoltage protection capability. They are intended for use in voltage
and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other
applications. These devices are ideal for situations where board space is
at a premium.

http://onsemi.com

Specification Features:

Steady State Power Routing of 200 mW


Peak Power 350 W (8 20 ms)
Low Leakage
Cathode Indicated by Polarity Band
Package Weight: 4.507 mg/wmt
Meets IEC6100042 Level 4, 15 kV (Air), 8 kV (Contact)
Meets IEC610044 Level 4, 40 A
Meets IEC610045 (Lightning), 24 A
Meets 16 kV Human Body Model ESD Requirements
PbFree Packages are Available

1
SOD323
CASE 477
STYLE 1

MARKING DIAGRAM

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic

xx M

Epoxy Meets UL 94, V0


LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any

xx = Specific Device Code


ZA = SD05T1
ZC = SD12T1
M = Date Code

QUALIFIED MAX REFLOW TEMPERATURE: 260C

Device Meets MSL 1 Requirements


Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the T1 with T3 in the Device Number to order the
13 inch/10,000 unit reel.

ORDERING INFORMATION
Package

Shipping

SD05T1

SOD323

3000/Tape & Reel

SD05T1G

SOD323
(PbFree)

3000/Tape & Reel

SD12T1

SOD323

3000/Tape & Reel

SD12T1G

SOD323
(PbFree)

3000/Tape & Reel

Device

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use


and best overall value.
Semiconductor Components Industries, LLC, 2004

September, 2004 Rev. 1

258

Publication Order Number:


SD05T1/D

SD05T1 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25C
IEC 6100042 (ESD)

Symbol

Value

Unit

Ppk

350

Watts

15
8.0

kV

40

Air
Contact

IEC 6100044 (EFT)


ESD Voltage (Human Body Model (HBM) Waveform per IEC 6100042)

VPP

30

kV

Total Power Dissipation on FR5 Board (Note 2) @ TA = 25C


Derate above 25C

PD

200
1.6

mW
mW/C

Thermal Resistance JunctiontoAmbient

RqJA

635

C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

TL

260

Lead Solder Temperature Maximum (10 Second Duration)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


Symbol

IF

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

VC VBR VRWM

IR VF
IT

IPP

UniDirectional TVS

ELECTRICAL CHARACTERISTICS
VBR, Breakdown Voltage
(V)

Max
Capacitance
(pF)

Max

IT
mA

VC @ IPP = 5 A
(Note 3)
(V)

Max IPP
(Note 3)
(A)

VC @ Max IPP
(Note 3)
(V)

6.2

7.3

1.0

9.8

24

14.5

350

13.3

15.75

1.0

19

15

25

150

Device

VRWM
(V)

IR @ VRWM
(mA)

Min

SD05T1, G

5.0

10

SD12T1, G

12

1.0

3. 8 20 ms pulse waveform.

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259

VR = 0 V
f = 1.0 MHz

SD05T1 Series
TYPICAL CHARACTERISTICS
280

140
120
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

260
240
220
200
180
160
140

100
80
60
40
20

120

100
1

0.5

1.5

3
2.5
BIAS (V)

3.5

4.5

Figure 1. SD05 Typical Capacitance versus Bias


Voltage

12

10

100
LEAKAGE CURRENT (nA)

LEAKAGE CURRENT (nA)

6
BIAS (V)

Figure 2. SD12 Typical Capacitance versus


Bias Voltage

1000

100

10
55 35 15

25
45 65 85
TEMPERATURE (C)

10

0.1
55

105 125 145

30

Figure 3. SD05 Typical Leakage Current


versus Temperature

20
45
70
TEMPERATURE (C)

95

120

145

Figure 4. SD12 Typical Leakage Current


versus Temperature



90

;

80

2

-' &/ "#


" 

100

PEAK PULSE DERATING IN % OF PEAK


POWER OR CURRENT @ TA = 25C

70
60
50
40
30
20
10



&/ !&#" 
0 2 m
"#
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+'+
&
(&  %(  (
&/ "  +&5 1 2 m

3


(&#' !&#" 
: 0  m








0
0

25

50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (C)

200




*   m



Figure 6. 8 20 ms Pulse Waveform

Figure 5. Pulse Derating Curve


http://onsemi.com
260

2

+

Preferred Device

  
  (6 <
SOT23 Dual Common Anode Zeners
for ESD Protection
http://onsemi.com
PIN 1. CATHODE
2. CATHODE
3. ANODE

Specification Features:

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the T1 with T3 in the Device Number to order the
13 inch/10,000 unit reel.

Semiconductor Components Industries, LLC, 2001

September, 2001 Rev. 0

261

3
2

MARKING
DIAGRAM

SOT23 Package Allows Either Two Separate Unidirectional


Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range 12 V
Standard Zener Breakdown Voltage Range 13.3 V to 15.75 V
Peak Power 300 Watt (8 X 20 ms)
Low Leakage
Flammability Rating UL 94 V0

1
2

12M

SOT23
CASE 318
STYLE 12

These dual monolithic silicon zener diodes are designed for


applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.

12M = Device Code


M
= Date Code

ORDERING INFORMATION
Device
SM12T1

Package

Shipping

SOT23

3000/Tape & Reel

Preferred devices are recommended choices for future use


and best overall value.

Publication Order Number:


SM12T1/D

SM12T1
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Ppk

300

Watts

15
8.0

kV

IEC 6100044 (EFT)

40

IEC 6100045 (Lightening)

12

Peak Power Dissipation @ 20 ms (Note 1)


@ TL 25C
IEC 6100042 (ESD)

Air
Contact

Total Power Dissipation on FR5 Board (Note 2) @ TA = 25C


Derate above 25C

PD

225
1.8

mW
mW/C

Thermal Resistance Junction to Ambient

RJA

556

C/W

Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C


Derate above 25C

PD

300
2.4

mW
mW/C

Thermal Resistance Junction to Ambient

RJA

417

C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

TL

260

Lead Solder Temperature Maximum (10 Second Duration)


1. Nonrepetitive current pulse per Figure 3
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter

Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

IF

VC VBR VRWM

IR VF
IT

Working Peak Reverse Voltage


Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current

IPP

Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

UniDirectional TVS

ELECTRICAL CHARACTERISTICS
VBR, Breakdown Voltage
(Volts)

VC @
IPP = 1 Amp

Max IPP
(Note 4)

Typical Capacitance
(pF)

Device

Device
Marking

VRWM
(Volts)

IR @ VRWM
(mA)

Min

Max

(Volts)

(Amps)

Pin 1 to 3 @ 0 Volts

SM12T1

12M

12

1.0

13.3

15.75

19

12

95

4. 8 20 ms pulse waveform per Figure 3

http://onsemi.com
262

SM12T1
TYPICAL CHARACTERISTICS
300
PD, POWER DISSIPATION (mW)

PPP, PEAK PULSE POWER (kW)

10

0.1

0.01

250
ALUMINA SUBSTRATE
200
150
100
FR5 BOARD
50
0

0.1

10
100
tp, PULSE DURATION (ms)

1000

Figure 1. NonRepetitive Peak Pulse Power


versus Pulse Time

70
60

HALF VALUE IRSM/2 @ 20 ms

50
40
30

tP

20

80
70
60
50
40
30
20
10

10
0

150

90

PULSE WIDTH (tP) IS DEFINED


AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms

80

75
100
125
TEMPERATURE (C)

100

PEAK VALUE IRSM @ 8 ms

tr

90

50

Figure 2. Steady State Power Derating Curve

C, CAPACITANCE (pF)

% OF PEAK PULSE CURRENT

100

25

0
0

20

40

60

80

t, TIME (ms)

Figure 3. 8 20 ms Pulse Waveform

1
5
8
BIAS VOLTAGE (VOLTS)

Figure 4. Typical Diode Capacitance

http://onsemi.com
263

12

175

SM12T1
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples


of TVS applications are illustrated below.

Computer Interface Protection

&
/54& +
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4


:

'" &#
++

)+

 

Microprocessor Protection
!++
!))
&++ 

4"

&

+& & 4"

:

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#/

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)+

 

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264

SM12T1
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

interface between the board and the package. With the


correct pad geometry, the packages will self align when
subjected to a solder reflow process.
,3
,;

,3
,;

,3;
,
,
,;
,
,2

inches
mm

SOT23
SOT23 POWER DISSIPATION
SOLDERING PRECAUTIONS

The power dissipation of the SOT23 is a function of the


drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT23 package, PD can be calculated as
follows:
PD =

The melting temperature of solder is higher than the rated


temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10C.
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.

TJ(max) TA
RJA

The values for the equation are found in the maximum


ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD = 150C 25C = 225 milliwatts
556C/W

The 556C/W for the SOT23 package assumes the use


of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

* * Soldering a device without preheating can cause


excessive thermal shock and stress which can result in
damage to the device.

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265

!>+ )
   
        

  
 
http://onsemi.com

Unidirectional*
The SMBJ12AON is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMBJ12AON is ideally suited
for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other
industrial/consumer applications.
Specification Features:

Working Peak Reverse Voltage Range 12 V


Peak Power 600 Watts @ 1 ms at Maximum Clamp Voltage @

PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER

Cathode

Peak Pulse Current


ESD Rating of Class 3 (>16 KV) per Human Body Model
ESD Rating IEC 61000 4.2 Level 4
Low Leakage < 5 mA at 12 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns

SMB
CASE 403A
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are

MARKING DIAGRAM
YWW
LEM

readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds


LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
ABSOLUTE MAXIMUM RATINGS

Anode

Y
WW
LEM

= Year
= Work Week
= Specific Device Code

ORDERING INFORMATION

Please See the Table on the Following Page


This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

Device {

Package

Shipping

SMBJ12AONT3

SMB

2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor


Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

The T3 suffix refers to a 13 inch reel.


For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2003

October, 2003 Rev. P1

266

Publication Order Number:


SMBJ12AON/D

SMBJ12AON
ABSOLUTE MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ TA = 25C
Derate Above 25C
Thermal Resistance from Junction to Ambient

Symbol

Value

Unit

PPK

600

PD

3.0

RqJL

40
25

mW/C
C/W

RqJA

0.55
4.4
226

W
mW/C
C/W

TJ, Tstg

65 to +150

PD

Operating and Storage Temperature Range

1. 10 X 1000 ms, nonrepetitive at maximum IPPM and VCM, see electrical characteristics.
2. 1 square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 30 A)


Symbol
IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR

IF

Parameter

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,


nonrepetitive duty cycle.

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)


Parameter
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
Absolute Maximum Clamping Voltage

Conditions

Symbol

Min

Typ

Max

Unit

IT = 1 mA

VZ

13.2

13.75

14.3

VRWM = 12 V

IR

5.0

mA

IPP = 17.5 A
(Per Figures 1 & 2)

VC

15.6

IPPM = 30.2 A
(Per Figure 3, Note 6)

VCM

19.9

5. VZ measured at pulse test IT at an ambient temperature of 25C.


6. Absolute Maximum Peak Current, IPPM.

http://onsemi.com
267

SMBJ12AON


-' &/ "#


" 

;



&/ !&#" 
0 , m
"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 , m

2
3


(&#' !&#" 
: 0 , m











;
-' &/ "#
" 



&/ !&#" 
0 2 m
"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

2
3


(&#' !&#" 
: 0  m








,





*   m

Figure 1. 1.6 6.5 ms Pulse Waveform


!&#"-

&/ !&#" . 

(&#' !&#" .





Figure 2. 8 20 ms Pulse Waveform


&/ "#
+ & )-'
&/ %  "  0 & 1 

"#
 %+ (   
+'+ &

(&  %(  ( &/


"  +&5
 - '  ,

6  m

2



*   m




2









3



*   

&* & 4   & "  

Figure 3. 10 1000 ms Pulse Waveform

Figure 4. Pulse Derating Curve

TYPICAL PROTECTION CIRCUIT


7 

#&+

! 

http://onsemi.com
268

!#





SMBJ12AON
APPLICATION NOTES
RESPONSE TIME

a very good response time, typically < 1 ns and negligible


inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

In most applications, the transient suppressor device is


placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have

DUTY CYCLE DERATING

If the duty cycle increases, the peak power must be


reduced as indicated by the curves of Figure 7. Average
power must be derated as the lead or ambient temperature
rises above 25C. The average power derating curve
normally given on data sheets may be normalized and used
for this purpose.

Vin (TRANSIENT)

OVERSHOOT DUE TO
INDUCTIVE EFFECTS

Vin (TRANSIENT)
VL

VL

Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t

Figure 5.

Figure 6.

1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 ms

0.02
10 ms
0.01

0.1 0.2

0.5

1
2
5
10
D, DUTY CYCLE (%)

20

50 100

Figure 7. Typical Derating Factor for Duty Cycle

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269

SMBJ12AON
UL RECOGNITION
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

The entire series has Underwriters Laboratory


Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests

http://onsemi.com
270

9
   
  
 
  
)(*+ 9 8 6 #
The SMF5.0A Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and
fast response time. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines, power supplies
and many other industrial/consumer applications.
Specification Features:

Standoff Voltage: 5 170 Volts


Peak Power 200 Watts @ 1 ms (SMF5.0A SMF58A)

Peak Power 175 Watts @ 1 ms (SMF60A SMF170A)


Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
IEC6100044 40 A ESD Protection
Low Profile Maximum Height of 1.0 mm
Small Footprint Footprint Area of 8.45 mm2

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PLASTIC SURFACE MOUNT


ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 170 VOLTS
200 WATT PEAK POWER

2
1: CATHODE
2: ANODE

Supplied in 8 mm Tape and Reel 3,000 Units per Reel


Cathode Indicated by Polarity Band

SOD123FL
CASE 498
PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL94, VO


LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any

MARKING DIAGRAM

QUALIFIED MAX REFLOW TEMPERATURE: 260C

1
CATHODE

Device Meets MSL 1 Requirements

2
ANODE

XX D

XX = Specific Device Code


D
= Date Code

ORDERING INFORMATION
Device

Package

Shipping

SMFxxxAT1

SOD123FL

3,000/Tape & Reel

LEAD ORIENTATION IN TAPE:


Cathode Lead to Sprocket Holes

Semiconductor Components Industries, LLC, 2003

March, 2003 Rev. 0

271

Publication Order Number:


SMF5.0AT1/D

SMF5.0AT1 Series
MAXIMUM RATINGS
Symbol

Value

Unit

Maximum Ppk Dissipation (PW10/1000 ms) (Note 1) SMF60A SMF170A

Rating

Ppk

175

Maximum Ppk Dissipation (PW10/1000 ms) (Note 1) SMF5.0A SMF58A

Ppk

200

Maximum Ppk Dissipation @ TA = 25C, (PW8/20 ms) (Note 2)

Ppk

1000

PD
RJA

385
4.0
325

mW
mW/C
C/W

RJcathode

26

C/W

TJ, Tstg

55 to +150

DC Power Dissipation @ TA = 25C (Note 3)


Derate above 25C
Thermal Resistance from Junction to Ambient (Note 3)
Thermal Resistance from Junction to Lead (Note 3)
Operating and Storage Temperature Range
1. Nonrepetitive current pulse at TA = 25C, per waveform of Figure 2.
2. Nonrepetitive current pulse at TA = 25C, per waveform of Figure 3.
3. Mounted with recommended minimum pad size, DC board FR4.

ELECTRICAL CHARACTERISTICS (TA = 25C unless


otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 12 A)
Symbol

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

IR
VBR

IF

Parameter

IPP

VRWM

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

IPP

UniDirectional TVS

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,


duty cycle = 4 pulses per minute maximum.

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272

SMF5.0AT1 Series
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
VRWM (V)

VBR @ IT (V) (Note 6)

IT

IR @ VRWM

VC(Max)

IPP(Max) (A)

Device

Marking

(Note 5)

Min

Nom

Max

(mA)

(mA)

(V)

(Note 7)

SMF5.0A

KE

6.4

6.7

10

400

9.2

21.7

SMF6.0A

KG

6.67

7.02

7.37

10

400

10.3

19.4

SMF6.5A

KK

6.5

7.22

7.6

7.98

10

250

11.2

17.9

SMF7.0A

KM

7.78

8.2

8.6

10

100

12

16.7

SMF7.5A

KP

7.5

8.33

8.77

9.21

50

12.9

15.5

SMF8.0A

KR

8.89

9.36

9.83

25

13.6

14.7

SMF8.5A

KT

8.5

9.44

9.92

10.4

10

14.4

13.9

SMF9.0A

KV

10

10.55

11.1

15.4

13.0

SMF10A

KX

10

11.1

11.7

12.3

2.5

17

11.8

SMF11A

KZ

11

12.2

12.85

13.5

2.5

18.2

11.0

SMF12A

LE

12

13.3

14

14.7

2.5

19.9

10.1

SMF13A

LG

13

14.4

15.15

15.9

21.5

9.3

SMF14A

LK

14

15.6

16.4

17.2

23.2

8.6

SMF15A

LM

15

16.7

17.6

18.5

24.4

8.2

SMF16A

LP

16

17.8

18.75

19.7

26

7.7

SMF17A

LR

17

18.9

19.9

20.9

27.6

7.2

SMF18A

LT

18

20

21

22.1

29.2

6.8

SMF20A

LV

20

22.2

23.35

24.5

32.4

6.2

SMF22A

LX

22

24.4

25.6

26.9

35.5

5.6

SMF24A

LZ

24

26.7

28.1

29.5

38.9

5.1

SMF26A

ME

26

28.9

30.4

31.9

42.1

4.8

SMF28A

MG

28

31.1

32.8

34.4

45.4

4.4

SMF30A

MK

30

33.3

35.1

36.8

48.4

4.1

SMF33A

MM

33

36.7

38.7

40.6

53.3

3.8

SMF36A

MP

36

40

42.1

44.2

58.1

3.4

SMF40A

MR

40

44.4

46.8

49.1

64.5

3.1

SMF43A

MT

43

47.8

50.3

52.8

69.4

2.9

SMF45A

MV

45

50

52.65

55.3

72.7

2.8

SMF48A

MX

48

53.3

56.1

58.9

77.4

2.6

SMF51A

MZ

51

56.7

59.7

62.7

82.4

2.4

SMF54A

NE

54

60

63.15

66.3

87.1

2.3

SMF58A

NG

58

64.4

67.8

71.2

93.6

2.1

SMF60A

NK

60

66.7

70.2

73.7

96.8

1.8

SMF64A

NM

64

71.1

74.85

78.6

103

1.7

SMF70A

NP

70

77.8

81.9

86

113

1.5

SMF75A

NR

75

83.3

87.7

92.1

121

1.4

SMF78A

NT

78

86.7

91.25

95.8

126

1.4

SMF85A

NV

85

94.4

99.2

104

137

1.3

SMF90A

NX

90

100

105.5

111

146

1.2

SMF100A

NZ

100

111

117

123

162

1.1

SMF110A

PE

110

122

128.5

135

177

1.0

SMF120A

PG

120

133

140

147

193

0.9

SMF130A

PK

130

144

151.5

159

209

0.8

SMF150A

PM

150

167

176

185

243

0.7

SMF160A

PP

160

178

187.5

197

259

0.7

SMF170A

PR

170

189

199

209

275

0.6

5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at ambient temperature of 25C.
7. Surge current waveform per Figure 2 and derate per Figure 3.

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273

SMF5.0AT1 Series
TYPICAL PROTECTION CIRCUIT
Zin

LOAD

Vin

VL

PP, PEAK POWER (WATTS)

10,000

100
VALUE (%)

1000

I
HALF VALUE RSM
2

50

100


0

10

100

10



90

100

1000

10,000

tP, PULSE WIDTH (ms)

t, TIME (ms)

Figure 1. Pulse Rating Curve

Figure 2. 10 X 1000 ms Pulse Waveform

160

&/ !&#" 
0 2 m

140

"#
 %+ (   
+'+
&
(&  %(  (
&/ "  +&5 1 2 m

80
70

120
100

60

(&#' !&#" 
: 0  m

50
40
30

20
10
0

PEAK PULSE DERATING IN % OF


PEAK POWER OR CURRENT @ TA = 25C

1.0

% OF PEAK PULSE CURRENT

PULSE WIDTH (tP) IS DEFINED


AS
THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50%
OF IRSM.
tr 10 s
PEAK VALUE IRSM

20

40

60

80

80
60
40
20
0

t, TIME (ms)

25

50

75

100

125

TA, AMBIENT TEMPERATURE (C)

Figure 3. 8 X 20 ms Pulse Waveform

Figure 4. Pulse Derating Curve

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274

150

P D , MAXIMUM POWER DISSIPATION (W)

SMF5.0AT1 Series
1
0.7
DERATING FACTOR

0.5
0.3
0.2
PULSE WIDTH
10 ms

0.1
0.07
0.05

1 ms

0.03
100 s

0.02
10 s
0.1 0.2

0.5

10

20

50 100

2.5
2
TL
1.5
1
0.5
0
25

50

75

100

125

150

D, DUTY CYCLE (%)

T, TEMPERATURE (C)

Figure 5. Typical Derating Factor for Duty Cycle

Figure 6. Steady State Power Derating

175

1000

1.2
1.0

C, CAPACITANCE (pF)

V F, TYPICAL FORWARD VOLTAGE (VOLTS)

0.01

0.8
0.6
0.4

MEASURED @ ZERO BIAS


100

MEASURED @ 50% VRWM


10

0.2
1

0
55

25

85

150

10

100

1000

WORKING PEAK REVERSE VOLTAGE (VOLTS)

T, TEMPERATURE (C)

Figure 7. Forward Voltage

Figure 8. Capacitance versus Working Peak


Reverse Voltage

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275

SMF5.0AT1 Series
INFORMATION FOR USING THE SOD123 FLAT LEAD SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

interface between the board and the package. With the


correct pad geometry, the packages will self align when
subjected to a solder reflow process.

RECOMMENDED FOOTPRINT FOR SOD123FL

,;
,

,
,;
,;
,

,
,2




POWERMITE POWER DISSIPATION


one can calculate the power dissipation of the device which
in this case is 385 milliwatts.

The power dissipation of the SOD123 Flat Lead is a


function of the mounting pad size. This can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RJA, the
thermal resistance from the device junction to ambient, and
the operating temperature, TA. Using the values provided
on the data sheet for the SOD123 Flat Lead package, PD
can be calculated as follows:
PD =

PD = 150C 25C = 385 milliwatts


325C/W

The 325C/W for the SOD123 Flat Lead package


assumes the use of the recommended footprint on a glass
epoxy printed circuit board to achieve a power dissipation
of 385 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOD123 Flat Lead
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.

TJ(max) TA
RJA

The values for the equation are found in the maximum


ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25C,

SOLDERING PRECAUTIONS
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.

The melting temperature of solder is higher than the rated


temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10C.

* Soldering a device without preheating can cause excessive


thermal shock and stress which can result in damage to the
device.

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276


   
*,$ ;6
 
  
for ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems and
other applications. This quad device provides superior surge
protection over current quad Zener MMQA series by providing up to
350 watts peak power.
Features:

SC-74 Package Allows Four Separate Unidirectional Configurations


Peak Power 350 Watts, 8 x 20 mS
ESD Rating of Class N (Exceeding 25 kV) per the

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SC74 QUAD TRANSIENT


VOLTAGE SUPPRESSOR
350 WATTS PEAK POWER
5 VOLTS


Human Body Model

ESD Rating:

IEC 6100042 (ESD) 15 kV (air) 8 kV (contact)


IEC 6100044 (EFT) 40 Amps (5/50 ns)
IEC 6100045 (lightning) 23 Amps (8/20 ms)
UL Flammability Rating of 94V0

PIN ASSIGNMENT


SC74
CASE 318F
STYLE 1

Hand Held Portable Applications such as Cell Phones, Pagers,


 ,
,
,
,
,
,

MARKING
DIAGRAM

Typical Applications:

Notebooks and Notebook Computers


xxx d

& (+
&+
& (+
& (+
&+
& (+

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Peak Power Dissipation


8 x 20 mS @ TA = 25C (Note 1)

Ppk

350

Total Power Dissipation on FR5 Board


@ TA = 25C (Note 2)
Derate Above 25C

PD

225

mW

1.8

mW/C

Thermal Resistance,
JunctiontoAmbient

RqJA

556

C/W

Junction and Storage


Temperature Range

TJ, Tstg

55 to
+150

260

Lead Solder Temperature


Maximum 10 Seconds Duration

TL

1. Nonrepetitive current pulse 8 x 20 mS exponential decay waveform


2. FR5 = 1.0 x 0.75 x 0.62 in.

xxx
d

= Device Code
= Date Code

ORDERING INFORMATION
Device

Package

Shipping

SMS05T1

SC74

3000/Tape & Reel

SMS12T1

SC74

3000/Tape & Reel

SMS15T1

SC74

3000/Tape & Reel

SMS24T1

SC74

3000/Tape & Reel

DEVICE MARKING INFORMATION


See specific marking information in the device marking
column of the Electrical Characteristics table on page 278 of
this data sheet.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 5

277

Publication Order Number:


SMS05T1/D

SMS05T1 Series
ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)


Symbol

IF

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM
IR
VBR
IT
QVBR

VC VBR VRWM

Working Peak Reverse Voltage

IR VF
IT

Maximum Reverse Leakage Current @ VRWM


Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR

IF

Forward Current

VF

Forward Voltage @ IF

ZZT

Maximum Zener Impedance @ IZT

IZK

Reverse Current

ZZK

Maximum Zener Impedance @ IZK

IPP

UniDirectional

ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL


Max
Reverse
Leakage
Current

Max Reverse Voltage


(Clamping Voltage)
At Specified Reverse
Surge Current (IRSM)

Max Reverse Voltage


(Clamping Voltage)
At Specified Reverse
Surge Current (IRSM)

IT

IR

VR

IRSM
(8x20 ms)

VRSM
(8x20 ms)

IRSM
(8x20 ms)

VRSM
(8x20 ms)

Breakdown
Voltage
VBR(V)

Capacitance
@ 0 Volt Bias,
1 MHz
(pF)

Device

Device
Marking

Min

Nom

Max

(mA)

(mA)

(V)

(A)

(V)

(A)

(V)

Min

Max

SMS05T1

5V0

6.0

7.2

1.0

20

5.0

5.0

9.8

23

15.5

250

400

SMS12T1

12V

13.3

15

1.0

1.0

12

5.0

19.0

15

23.0

80

150

SMS15T1

15V

16.7

18.5

1.0

1.0

15

5.0

24.0

12

29.0

60

125

SMS24T1

24V

26.7

32

1.0

1.0

24

5.0

40.0

44.0

40

75

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278

SMS05T1 Series
110
% OF RATED POWER OR IPP

PPP, PEAK PULSE POWER (kW)

10

0.1

100
90
80
70
60
50
40
30
20
10
0

0.01
0.1

10

100

1000

75

100

125

Figure 10. Power Derating Curve

150

50

80
70

VC, CLAMPING VOLTAGE (V)

WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms

90
PERCENT OF IPP

50

Figure 9. NonRepetitive Peak Pulse Power


versus Pulse Time

110

ct

60

td = IPP/2

50
40
30
20

45

WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms

SMS24

40
35
30

SMS15

25

SMS12

20
15
SMS05

10
5

10

15

20

25

30

10

15

20

25

t, TIME (ms)

IPP, PEAK PULSE CURRENT (A)

Figure 11. Pulse Waveform

Figure 12. Clamping Voltage versus


Peak Pulse Current
300

5
PULSE
WAVEFORM
tr = 8 ms
td = 20 ms

250
C, CAPACITANCE (pF)

VF, FORWARD VOLTAGE (V)

25

TA, AMBIENT TEMPERATURE (C)

100

10
0

tp, PULSE DURATION (ms)

8 X 20 ms SURGE

TJ = 25C

200
SMS05
150
100
SMS12
50

SMS15
SMS24

0
0

10

15

20

10

15

20

25

IF, FORWARD CURRENT (A)

VR, REVERSE VOLTAGE (V)

Figure 13. 8 x 20 ms VF

Figure 14. Typical Capacitance (SMS05 Series)

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279

CHAPTER 3
Case Outlines and Package Dimensions

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280

CASE OUTLINES AND PACKAGE DIMENSIONS

SOD523
CASE 50201
ISSUE A

2
1

DATE 07 JUL 2004

SCALE 4:1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

A
Y
B
1

D 2 PL


DIM
A
B
C
D
J
K
S

MILLIMETERS
MIN
NOM
MAX
 
 







 



 
 
 
 
 




MIN

 
 
 
 



INCHES
NOM


 





MAX


 
 

 


C
K
J

GENERIC
MARKING DIAGRAM*

SEATING
PLANE

XXd
1

SOLDERING FOOTPRINT*
1.40
0.0547

0.40
0.0157

XX
d

= Specific Device Code


= Date Code

*This information is generic. Please refer to


device data sheet for actual part marking.
PbFree indicator, G or microdot G,
may or may not be present.

0.40
0.0157

SCALE 10:1

mm
inches

SOD523
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com
281

SOD323
CASE 47702
ISSUE E

DATE 12 JUL 2004


1
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F
DRAWING WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.

K
A

DIM
A
B
C
D
E
H
J
K
L

E
C

J
NOTE 3

L
NOTE 5

MILLIMETERS
MIN
MAX
1.60
1.80
1.15
1.35
0.80
1.00
0.25
0.40
0.15 REF
0.00
0.10
0.089
0.177
2.30
2.70
0.075

INCHES
MIN
MAX
0.063
0.071
0.045
0.053
0.031
0.039
0.010
0.016
0.006 REF
0.000
0.004
0.0035 0.0070
0.091
0.106
0.003

H
STYLE 1:
PIN 1. CATHODE
2. ANODE

SOLDERING FOOTPRINT*

0.83
0.033

xx M

1.60
0.063
2.85
0.112

xx

GENERIC
MARKING DIAGRAM*

0.63
0.025

xx = Specific Device Code


M = Date Code

*For additional information on our PbFree strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

*This information is generic. Please refer to


device data sheet for actual part marking.
PbFree indicator, G or microdot G,
may or may not be present.

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282

CASE OUTLINES AND PACKAGE DIMENSIONS


SOT23 (TO236)
CASE 31808
ISSUE AK
DATE 14 SEP 2004
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 31801 THRU 07 AND 09 OBSOLETE,
NEW STANDARD 31808.

A
L
3
1

B S

DIM
A
B
C
D
G
H
J
K
L
S
V

G
C
H

INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236

MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60

GENERIC
MARKING DIAGRAM*
STYLE 1 THRU 5:
CANCELLED

STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR

STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE

STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE

STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE

STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODEANODE
3. ANODE

xxxM

STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE

STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE

STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE

STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE

STYLE 17:
STYLE 18:
STYLE 20:
STYLE 19:
PIN 1. NO CONNECTION
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. ANODE
2. CATHODE
2. ANODE
2. ANODE
3. CATHODE
3. ANODE
3. GATE
3. CATHODEANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT

STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE

STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE

STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION

STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE

STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE

http://onsemi.com
283

1
xxx
M
G

= Specific Device Code


= Date Code
= PbFree Package

*This information is generic. Please refer to device data sheet for actual part marking.
PbFree indicator, G or microdot G,
may or may not be present.

SOD123
CASE 42504
ISSUE C

DATE 10/26/1992

SCALE 5:1
A


     
!  
   "

DIM
A
B
C
D
E
H
J
K

http://onsemi.com
284

INCHES
MIN
MAX


 



 
 

###


###

 
 

  
  "
 

MILLIMETERS
MIN
MAX








 
###

 
###
 



CASE OUTLINES AND PACKAGE DIMENSIONS

SMA
CASE 403B02
ISSUE C

DATE 11/27/2001

SCALE 1:1

S

     
!  
   "
 $# $! %  $# 

DIM
A
B
C
D
H
J
K
S

POLARITY INDICATOR OPTIONAL


AS NEEDED

MILLIMETERS
MIN
MAX


 



 


 
 






MARKING
DIAGRAM

INCHES
MIN
MAX
 
 

 







 


 
 

xxxx
AWW#

xx
A
WW
#

http://onsemi.com
285

= Specific Device Code


= Assembly Location
= Work Week
= Die Fab Location Code

POWERMITE
CASE 45704
ISSUE D

DATE 01/02/2000

SCALE 4:1

F


 $

TERM. 1

B
K
TERM. 2

R
L
J
D

H
T



 $

http://onsemi.com
286


     
!  
   
     ' 
("! '   $' 
("! '   $' "
 
     
DIM
A
B
C
D
F
H
J
K
L
R
S

MILLIMETERS
INCHES
MIN
MAX
MIN
MAX





 



 




 
 


 

# &  # &
 
 

 


 
 


 

 



(
 (

CASE OUTLINES AND PACKAGE DIMENSIONS

SMB
CASE 403A03
ISSUE D

DATE 06/04/1999

SCALE 1:1

S
A


     
!  
   "
   " $ ' %"
 

INCHES
DIM MIN
MAX
A
 
 
B
 
 
C


D


H   
J


K


P
 (
S
 
 

MILLIMETERS
MIN
MAX









 
 


 
 (



AXIAL LEAD, DO41


CASE 5910
ISSUE S


     
!  
   "
 # $! %  #
 # $! %  # 
  '    %"
) # ' "  
   $ " $
     %" (


DATE 01/28/2002

D
F

DIM
A
B
D
F
K

A
SCALE 1:1
F
K

http://onsemi.com
287

INCHES
MIN
MAX
 
 

 
 

###


###

MILLIMETERS
MIN
MAX
 
 




###
 

###

AXIAL LEAD
CASE 1702
ISSUE C

DATE 02/28/1973


    (" 
 %"  (

DIM
A
B
D
F
K

D
K
F
2

INCHES
MIN
MAX


 
 


###


 

MILLIMETERS
MIN
MAX






###
 

 

A
  
  
 "

SCALE 1:1

F
K

MOSORB
CASE 41A04
ISSUE D

DATE 01/14/2002

B

*+     
 !  
*+    "
*+  ("  
'   
*+  # "'  # $! %
  #

K
P
P

DIM
A
B
D
K
P

SCALE 1:1
K

http://onsemi.com
288

INCHES
MIN
MAX


 
 



###
###


MILLIMETERS
MIN
MAX







###
###
 

SOD123FL
CASE 49801
ISSUE O
DATE 02/18/2002
SCALE 4:1

B
L


     
!  
   
    $   ' 
("
    )   $ '
 (  ( "  $%  
    ( "   

POLARITY INDICATOR
OPTIONAL AS NEEDED

DIM
A
B
C
D
E
H
J
K
L

MILLIMETERS
MIN
MAX







 



 
 
 





INCHES
MIN
MAX



 


 







 
 



MARKING
DIAGRAM

RECOMMENDED FOOTPRINT FOR SOD123FL

XXXD






 
 




,,
-./012

SOD123

http://onsemi.com
289

XXX = Specific Device Code


D
= Date Code

SC70 (SOT323)
CASE 41904
ISSUE L

DATE 09/10/2000

SCALE 4:1

A
L

     
!  
   "

S
1

D
G

C


  

  
  
 $
 

INCHES
MIN
MAX







 





 
 (
 $
 (



MILLIMETERS
MIN
MAX

 
 





 


 
 
 
 (
$
(





DIM
A
B
C
D
G
H
J
K
L
N
S

  
  
 
 "

  
  $
 
 

  
  "
 "
 

  
  
 
 "

  
  $
 
 

  
  
 '
 

  
  
 "
 "#

  
  "
 
 #"

http://onsemi.com
290

SC89, 3 LEAD
CASE 463C03
ISSUE C

DATE 31 JUL 2003

SCALE 4:1
A
X

3
1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C01 OBSOLETE, NEW STANDARD 463C02.

B Y S

K
G
2 PL

D


DIM
A
B
C
D
G
H
J
K
L
M
N
S

3 PL

M
C

J
T

STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR

STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHOD
E

STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE

SEATING
PLANE

MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF

10 _

10 _
1.50
1.60
1.70

INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF

10 _

10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009

GENERIC
MARKING DIAGRAM*

STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE

3
xx D
1

H
xx = Specific Device Code
D = Date Code
L

*This information is generic. Please refer to


device data sheet for actual part
marking.

G
RECOMMENDED PATTERN
OF SOLDER PADS

http://onsemi.com
291

SC74
CASE 318F05
ISSUE K

DATE 06/03/2003

1
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03 OBSOLETE. NEW
STANDARD 318F04.

A
L
6

S
1

D
G
M
J



STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE

STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE

STYLE 4:
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3

STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4

STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1

STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1

STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1

STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE

http://onsemi.com
292

DIM
A
B
C
D
G
H
J
K
L
M
S

INCHES
MIN
MAX
   
 
 
  
  
 
  
  
 
_
_
  

MILLIMETERS
MIN
MAX

 



 
 



 
 
 
 
 

 

_
_



GENERIC
MARKING DIAGRAM

DEVM

DEV
M

= Specific Device Code


= Date Code

SC88A (SOT353)
CASE 419A02
ISSUE G

DATE 25 JUN 2003

SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A01 OBSOLETE. NEW STANDARD
419A02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

A
G

DIM
A
B
C
D
G
H
J
K
N
S

S
1

D 5 PL

 

N
J
C

MILLIMETERS
MIN
MAX

 
 


 
 

$
###
 
 
 
 

 (

 

GENERIC MARKING
DIAGRAM*

INCHES
MIN
MAX








 $
###


 


(



XXd

XX = Specific Device Code


d = Date Code
*This infomration is generic. Please refer to
device data sheet for actual part
marking.

STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR

STYLE 2:
PIN 1. ANODE
2. EMITTER
3. BASE
4. COLLECTOR
5. CATHODE

STYLE 3:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. CATHODE 1

STYLE 4:
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
5. GATE 2

STYLE 6:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
5. COLLECTOR

STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR

STYLE 8:
PIN 1. CATHODE
2. COLLECTOR
3. N/C
4. BASE
5. EMITTER

STYLE 9:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE

http://onsemi.com
293

STYLE 5:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4

CHAPTER 4
Index

http://onsemi.com
294

TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

1.5KE100A

25 , 76

1.5SMC18AT3

41 , 52

1N5354B

10 , 58

1.5KE10A

25 , 76

1.5SMC20AT3

41 , 52

1N5355B

10 , 58

1.5KE110A

25 , 76

1.5SMC22AT3

41 , 52

1N5356B

10 , 58

1.5KE11A

25 , 76

1.5SMC24AT3

41 , 52

1N5357B

10 , 58

1.5KE120A

25 , 76

1.5SMC27AT3

41 , 52

1N5358B

10 , 58

1.5KE12A

25 , 76

1.5SMC30AT3

41 , 52

1N5359B

10 , 58

1.5KE130A

25 , 76

1.5SMC33AT3

41 , 52

1N5360B

11 , 58

1.5KE13A

25 , 76

1.5SMC36AT3

41 , 52

1N5361B

11 , 58

1.5KE150A

26 , 76

1.5SMC39AT3

41 , 52

1N5362B

11 , 58

1.5KE15A

25 , 76

1.5SMC43AT3

41 , 52

1N5363B

11 , 59

1.5KE160A

26 , 76

1.5SMC47AT3

41 , 52

1N5364B

11 , 59

1.5KE16A

25 , 76

1.5SMC51AT3

41 , 52

1N5365B

11 , 59

1.5KE170A

26 , 76

1.5SMC56AT3

41 , 52

1N5366B

11 , 59

1.5KE180A

26 , 76

1.5SMC6.8AT3

41 , 52

1N5367B

11 , 59

1.5KE18A

25 , 76

1.5SMC6.8AT3 Series

50

1N5368B

11 , 59

1.5KE200A

26 , 76

1.5SMC62AT3

41 , 52

1N5369B

11 , 59

1.5KE20A

25 , 76

1.5SMC68AT3

41 , 52

1N5370B

11 , 59

1.5KE220A

26 , 76

1.5SMC7.5AT3

41 , 52

1N5371B

11 , 59

1.5KE22A

25 , 76

1.5SMC75AT3

41 , 52

1N5372B

11 , 59

1.5KE24A

25 , 76

1.5SMC8.2AT3

41 , 52

1N5373B

11 , 59

1.5KE250A

26 , 76

1.5SMC82AT3

41 , 52

1N5374B

11 , 59

1.5KE27A

25 , 76

1.5SMC9.1AT3

41 , 52

1N5375B

11 , 59

1.5KE30A

25 , 76

1.5SMC91AT3

41 , 52

1N5376B

11 , 59

1.5KE33A

25 , 76

1N5333B

10 , 58

1N5377B

11 , 59

1.5KE36A

25 , 76

1N5333B Series

56

1N5378B

11 , 59

1.5KE39A

25 , 76

1N5334B

10 , 58

1N5379B

11 , 59

1.5KE43A

25 , 76

1N5335B

10 , 58

1N5380B

11 , 59

1.5KE47A

25 , 76

1N5336B

10 , 58

1N5381B

11 , 59

1.5KE51A

25 , 76

1N5337B

10 , 58

1N5382B

11 , 59

1.5KE56A

25 , 76

1N5338B

10 , 58

1N5383B

11 , 59

1.5KE6.8A

25 , 76

1N5339B

10 , 58

1N5384B

11 , 59

1.5KE62A

25 , 76

1N5340B

10 , 58

1N5385B

11 , 59

1.5KE68A

25 , 76

1N5341B

10 , 58

1N5386B

11 , 59

1.5KE7.5A

25 , 76

1N5342B

10 , 58

1N5387B

11 , 59

1.5KE75A

25 , 76

1N5343B

10 , 58

1N5388B

11 , 59

1.5KE8.2A

25 , 76

1N5344B

10 , 58

1N5908

24 , 63

1.5KE82A

25 , 76

1N5345B

10 , 58

1N5913B

10 , 70

1.5KE9.1A

25 , 76

1N5346B

10 , 58

1N5913B Series

1.5KE91A

25 , 76

1N5347B

10 , 58

1N5917B

70

1.5SMC10AT3

41 , 52

1N5348B

10 , 58

1N5919B

10 , 70

1.5SMC11AT3

52

1N5349B

10 , 58

1N5920B

10 , 70

1.5SMC12AT3

41 , 52

1N5350B

10 , 58

1N5921B

10 , 70

1.5SMC13AT3

41 , 52

1N5351B

10 , 58

1N5923B

70

1.5SMC15AT3

41 , 52

1N5352B

10 , 58

1N5924B

10 , 70

1.5SMC16AT3

41 , 52

1N5353B

10 , 58

1N5925B

70

http://onsemi.com
295

68

TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

1N5926B

10 , 70

1N6283A

25

1PMT30AT1

87

1N5927B

10 , 70

1N6284A

25

1PMT30AT3

29 , 87

1N5929B

10 , 70

1N6285A

25

1PMT33AT1

87

1N5930B

10 , 70

1N6286A

25

1PMT33AT3

29 , 87

1N5931B

10 , 70

1N6287A

25

1PMT36AT1

87

1N5932B

10 , 70

1N6288A

25

1PMT36AT3

29 , 87

1N5933B

10 , 70

1N6289A

25

1PMT40AT1

87

1N5934B

10 , 70

1N6290A

25

1PMT40AT3

29 , 87

1N5935B

11 , 70

1N6291A

25

1PMT48AT1

87

1N5936B

11 , 70

1N6292A

25

1PMT48AT3

29 , 87

1N5937B

11 , 70

1N6293A

25

1PMT5.0AT1

87

1N5938B

11 , 70

1N6294A

25

1PMT5.0AT1/T3 Series

85

1N5940B

11 , 70

1N6295A

25

1PMT5.0AT3

1N5941B

11 , 70

1N6296A

25

1PMT51AT1

87

1N5942B

11 , 70

1N6297A

25

1PMT51AT3

29 , 87

1N5943B

11 , 70

1N6298A

25

1PMT58AT1

87

1N5944B

11 , 70

1N6299A

26

1PMT58AT3

29 , 87

1N5945B

70

1N6300A

26

1PMT5920B Series

1N5946B

11 , 70

1N6301A

26

1PMT5920BT1

91

1N5947B

11 , 70

1N6302A

26

1PMT5920BT3

18 , 91

1N5948B

11 , 70

1N6303A

1N5950B

11 , 70

1N6373

1N5951B

11 , 70

1N6373 1N6381 Series

1N5952B

11 , 70

1N5953B

11 , 70

1N5954B
1N5955B

29 , 87

90

26

1PMT5921BT1

91

24 , 81

1PMT5921BT3

18 , 91

80

1PMT5922BT1

91

1N6374

24 , 81

1PMT5922BT3

18 , 91

1N6375

24 , 81

1PMT5923BT1

91

11 , 70

1N6376

24 , 81

1PMT5923BT3

18 , 91

11 , 70

1N6377

24 , 81

1PMT5924BT1

91

1N5956B

11 , 70

1N6378

81

1PMT5924BT3

18 , 91

1N6267A

25

1N6379

24 , 81

1PMT5925BT1

91

1N6267A Series

74

1N6380

24 , 81

1PMT5925BT3

18 , 91

1N6268A

25

1N6381

24 , 81

1PMT5927BT1

91

1N6269A

25

1PMT12AT1

87

1PMT5927BT3

18 , 91

1N6270A

25

1PMT12AT3

29 , 87

1PMT5929BT1

91

1N6271A

25

1PMT16AT1

87

1PMT5929BT3

18 , 91

1N6272A

25

1PMT16AT3

29 , 87

1PMT5930BT1

91

1N6273A

25

1PMT18AT1

87

1PMT5930BT3

18 , 91

1N6274A

25

1PMT18AT3

29 , 87

1PMT5931BT1

91

1N6275A

25

1PMT22AT1

87

1PMT5931BT3

18 , 91

1N6276A

25

1PMT22AT3

29 , 87

1PMT5933BT1

91

1N6277A

25

1PMT24AT1

87

1PMT5933BT3

18 , 91

1N6278A

25

1PMT24AT3

29 , 87

1PMT5934BT1

91

1N6279A

25

1PMT26AT1

87

1PMT5934BT3

18 , 91

1N6280A

25

1PMT26AT3

29 , 87

1PMT5935BT1

91

1N6281A

25

1PMT28AT1

87

1PMT5935BT3

18 , 91

1N6282A

25

1PMT28AT3

29 , 87

1PMT5936BT1

91

http://onsemi.com
296

TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

1PMT5936BT3

18 , 91

1SMA45AT3

32 , 104

1SMA6.0AT3

32 , 104

1PMT5939BT1

91

1SMA48AT3

32 , 104

1SMA6.5AT3

32 , 104

1PMT5939BT3

19 , 91

1SMA48CAT3

33 , 96

1SMA60AT3

104

1SMA5.0AT3

32 , 104

1PMT5941BT1

91

1PMT5941BT3

19 , 91

1PMT7.0AT1

87

1PMT7.0AT3

29 , 87

1SMA10AT3

32 , 104

1SMA10CAT3
1SMA10CAT3 Series
1SMA11AT3
1SMA11CAT3
1SMA12AT3
1SMA12CAT3

33 , 96
94

1SMA5.0AT3 Series
1SMA51AT3
1SMA51CAT3
1SMA54AT3
1SMA54CAT3
1SMA58AT3

102

1SMA60CAT3
1SMA64AT3

33 , 96
32 , 104

32 , 104

1SMA64CAT3

33 , 96

33 , 96

1SMA7.0AT3

32 , 104

32 , 104

1SMA7.5AT3

32 , 104

33 , 96

1SMA70AT3

32 , 104

32 , 104

1SMA70CAT3

33 , 96

32 , 104

1SMA58CAT3

33 , 96

1SMA75AT3

32 , 104

33 , 96

1SMA5913BT3

18 , 99

1SMA78AT3

104

32 , 104

1SMA5913BT3 Series

98

1SMA78CAT3

33 , 96

33 , 96

1SMA5914BT3

18 , 99

1SMA8.0AT3

32 , 104

32 , 104

1SMA5915BT3

18 , 99

1SMA8.5AT3

32 , 104

33 , 96

1SMA5916BT3

18 , 99

1SMA9.0AT3

32 , 104

104

1SMA5917BT3

18 , 99

1SMB100AT3

34 , 118

33 , 96

1SMA5918BT3

18 , 99

1SMB10AT3

34 , 118

32 , 104

1SMA5919BT3

18 , 99

1SMB10CAT3

36 , 108

33 , 96

1SMA5920BT3

18 , 99

1SMB10CAT3 Series

32 , 104

1SMA5921BT3

18 , 99

1SMB110AT3

35 , 118

33 , 96

1SMA5922BT3

18 , 99

1SMB11AT3

34 , 118

1SMA17AT3

32 , 104

1SMA5923BT3

18 , 99

1SMB11CAT3

36 , 108

1SMA18AT3

32 , 104

1SMA5924BT3

18 , 99

1SMB120AT3

35 , 118

33 , 96

1SMA5925BT3

18 , 99

1SMB12AT3

34 , 118

32 , 104

1SMA5926BT3

18 , 99

1SMB12CAT3

36 , 108

33 , 96

1SMA5927BT3

18 , 99

1SMB130AT3

35 , 118

32 , 104

1SMA5928BT3

18 , 99

1SMB13AT3

34 , 118

1SMA13AT3
1SMA13CAT3
1SMA14AT3
1SMA14CAT3
1SMA15AT3
1SMA15CAT3
1SMA16AT3
1SMA16CAT3

1SMA18CAT3
1SMA20AT3
1SMA20CAT3
1SMA22AT3
1SMA22CAT3
1SMA24AT3
1SMA24CAT3
1SMA26AT3
1SMA26CAT3
1SMA28AT3
1SMA28CAT3
1SMA30AT3
1SMA30CAT3
1SMA33AT3
1SMA33CAT3
1SMA36AT3
1SMA36CAT3
1SMA40AT3
1SMA40CAT3
1SMA43AT3
1SMA43CAT3

106

33 , 96

1SMA5929BT3

18 , 99

1SMB13CAT3

36 , 108

32 , 104

1SMA5930BT3

18 , 99

1SMB14AT3

34 , 118

96

1SMA5931BT3

18 , 99

1SMB14CAT3

36 , 108

32 , 104

1SMA5932BT3

18 , 99

1SMB150AT3

35 , 118

33 , 96

1SMA5933BT3

18 , 99

1SMB15AT3

34 , 118

32 , 104

1SMA5934BT3

18 , 99

1SMB15CAT3

36 , 108

33 , 96

1SMA5935BT3

18 , 99

1SMB160AT3

35 , 118

32 , 104

1SMA5936BT3

18 , 99

1SMB16AT3

34 , 118

33 , 96

1SMA5937BT3

18 , 99

1SMB16CAT3

36 , 108

32 , 104

1SMA5938BT3

19 , 99

1SMB170AT3

35 , 118

33 , 96

1SMA5939BT3

19 , 99

1SMB17AT3

34 , 118

32 , 104

1SMA5940BT3

19 , 99

1SMB17CAT3

36 , 108

33 , 96

1SMA5941BT3

19 , 99

1SMB18AT3

34 , 118

32 , 104

1SMA5942BT3

19 , 99

1SMB18CAT3

36 , 108

33 , 96

1SMA5943BT3

19 , 99

1SMB20AT3

34 , 118

32 , 104

1SMA5944BT3

19 , 99

1SMB20CAT3

36 , 108

33 , 96

1SMA5945BT3

19 , 99

1SMB22AT3

34 , 118

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TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

36 , 108

1SMB5928BT3

18 , 113

1SMB9.0AT3

34 , 118

34

1SMB5929BT3

18 , 113

1SMB90AT3

34 , 118

36 , 108

1SMB5930BT3

18 , 113

1SMC10AT3

40 , 124

1SMB26AT3

34 , 118

1SMB5931BT3

18 , 113

1SMC11AT3

124

1SMB26CAT3

36 , 108

1SMB5932BT3

18 , 113

1SMC12AT3

40 , 124

1SMB28AT3

34 , 118

1SMB5933BT3

18 , 113

1SMC13AT3

40 , 124

1SMB28CAT3

36 , 108

1SMB5934BT3

18 , 113

1SMC14AT3

40 , 124

34

1SMB5935BT3

18 , 113

1SMC15AT3

40 , 124

36 , 108

1SMB5936BT3

18 , 113

1SMC16AT3

40 , 124

34

1SMB5937BT3

18 , 113

1SMC17AT3

40 , 124

1SMB33CAT3

36 , 108

1SMB5938BT3

19 , 113

1SMC18AT3

40 , 124

1SMB36AT3

34 , 118

1SMB5939BT3

19 , 113

1SMC20AT3

40 , 124

1SMB36CAT3

36 , 108

1SMB5940BT3

19 , 113

1SMC22AT3

40 , 124

1SMB40AT3

34 , 118

1SMB5941BT3

19 , 113

1SMC24AT3

40 , 124

1SMB40CAT3

36 , 108

1SMB5942BT3

19 , 113

1SMC26AT3

40 , 124

1SMB43AT3

34 , 118

1SMB5943BT3

19 , 113

1SMC28AT3

40 , 124

1SMB43CAT3

36 , 108

1SMB5944BT3

19 , 113

1SMC30AT3

40 , 124

1SMB45AT3

34 , 118

1SMB5945BT3

19 , 113

1SMC33AT3

40 , 124

1SMB45CAT3

36 , 108

1SMB5946BT3

19 , 113

1SMC36AT3

40 , 124

1SMB48AT3

34 , 118

1SMB5947BT3

19 , 113

1SMC40AT3

40 , 124

1SMB48CAT3

36 , 108

1SMB5948BT3

19 , 113

1SMC43AT3

40 , 124

1SMB5.0AT3

34 , 118

1SMB5949BT3

19 , 113

1SMC45AT3

40 , 124

116

1SMB5950BT3

19 , 113

1SMC48AT3

40 , 124

1SMB51AT3

34 , 118

1SMB5951BT3

19 , 113

1SMC5.0AT3

40 , 124

1SMB51CAT3

36 , 108

1SMB5952BT3

19 , 113

1SMC5.0AT3 Series

1SMB54AT3

34 , 118

1SMB5953BT3

19 , 113

1SMC51AT3

40 , 124

1SMB54CAT3

36 , 108

1SMB5954BT3

19 , 113

1SMC54AT3

40 , 124

1SMB58AT3

34 , 118

1SMB5955BT3

19 , 113

1SMC58AT3

40 , 124

1SMB58CAT3

36 , 108

1SMB5956BT3

19 , 113

1SMC6.0AT3

40 , 124

1SMB5913BT3

18 , 113

1SMB6.0AT3

34

1SMC6.5AT3

40 , 124

1SMB22CAT3
1SMB24AT3
1SMB24CAT3

1SMB30AT3
1SMB30CAT3
1SMB33AT3

1SMB5.0AT3 Series

1SMB5913BT3 Series

122

111

1SMB6.5AT3

34 , 118

1SMC60AT3

40 , 124

1SMB5914BT3

18 , 113

1SMB60AT3

34 , 118

1SMC64AT3

40 , 124

1SMB5915BT3

18 , 113

1SMB60CAT3

36 , 108

1SMC7.0AT3

40 , 124

1SMB5916BT3

18 , 113

1SMB64AT3

34 , 118

1SMC7.5AT3

40 , 124

1SMB5917BT3

18 , 113

1SMB64CAT3

36 , 108

1SMC70AT3

40 , 124

1SMB5918BT3

18 , 113

1SMB7.0AT3

34 , 118

1SMC75AT3

40 , 124

1SMB5919BT3

18 , 113

1SMB7.5AT3

34 , 118

1SMC78AT3

40 , 124

1SMB5920BT3

18 , 113

1SMB70AT3

34 , 118

1SMC8.0AT3

40 , 124

1SMB5921BT3

18 , 113

1SMB70CAT3

108

1SMC8.5AT3

40 , 124

1SMB5922BT3

18 , 113

1SMB75AT3

34 , 118

1SMC9.0AT3

40 , 124

1SMB5923BT3

18 , 113

1SMB75CAT3

36 , 108

BZG03C15

18 , 129

1SMB5924BT3

18 , 113

1SMB78CAT3

108

1SMB5925BT3

18 , 113

1SMB8.0AT3

34 , 118

BZG03C150

1SMB5926BT3

18 , 113

1SMB8.5AT3

34 , 118

BZX84B16LT1

14

1SMB5927BT3

18 , 113

1SMB85AT3

34 , 118

BZX84B18LT1

14

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298

BZG03C15 SERIES

128
19 , 129

TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

BZX84B4V7LT1

14 , 135

BZX84C51LT1

15 , 137

MM3Z2V4T1

BZX84B5V1LT1

14

BZX84C56LT1

15 , 137

MM3Z2V4T1 SERIES

BZX84B5V6LT1

14

BZX84C5V1ET1

BZX84B6V2LT1

14

BZX84C5V1LT1

14 , 137

MM3Z2V7T1

158

BZX84B6V8LT1

14

BZX84C5V6ET1

14 , 27 , 132

MM3Z30VT1

12 , 158

BZX84B7V5LT1

14

BZX84C5V6LT1

14 , 137

MM3Z33VT1

12 , 158

BZX84B8V2LT1

14

BZX84C62LT1

15 , 137

MM3Z36VT1

13 , 158

BZX84B9V1LT1

14

BZX84C68LT1

15 , 137

MM3Z39VT1

13 , 158

MM3Z3V0T1

12 , 158

14 , 27 , 132

BZX84C10ET1

14 , 27 , 132

BZX84C6V2ET1

14 , 27

BZX84C10LT1

14 , 137

BZX84C6V2LT1

14 , 137

BZX84C11LT1

MM3Z2V7ST1

MM3Z3V3ST1

156
12

12

14 , 137

BZX84C6V8ET1

14 , 27 , 132

BZX84C12ET1

14 , 27 , 132

BZX84C6V8LT1

14 , 137

MM3Z3V3TT1

12

BZX84C12LT1

14 , 137

BZX84C75LT1

15 , 137

MM3Z3V6ST1

12

BZX84C13LT1

14 , 137

BZX84C7V5ET1

14 , 27 , 132

BZX84C15ET1

14 , 27 , 132

BZX84C7V5LT1

14 , 137

MM3Z3V9ST1

BZX84C15LT1

14 , 137

BZX84C8V2LT1

14 , 137

MM3Z3V9T1

12 , 158

BZX84C16ET1

14 , 27 , 132

BZX84C9V1LT1

14 , 137

MM3Z43VT1

13 , 158

BZX84C16LT1

14 , 137

DF3A6.8FUT1

45, 141

MM3Z47VT1

13 , 158

BZX84C18ET1

14 , 27 , 132

DF3A6.8FUT1

45

MM3Z4V3ST1

BZX84C18LT1

14 , 137

DF6A6.8FU

48

MM3Z4V3T1

BZX84C20LT1

14 , 137

DF6A6.8FUT1

BZX84C22LT1

14 , 137

ICTE10

24 , 81

MM3Z4V7T1

12 , 158

BZX84C24ET1

14 , 27 , 132

ICTE12

24 , 81

MM3Z51VT1

13 , 158

BZX84C24LT1

14 , 137

ICTE15

24 , 81

MM3Z56VT1

13 , 158

BZX84C27ET1

14 , 27 , 132

ICTE18

24 , 81

MM3Z5V1ST1

BZX84C27LT1

14 , 137

ICTE22

24 , 81

MM3Z5V1T1

131

ICTE36

24 , 81

MM3Z5V6ST1

ICTE5

24 , 81

MM3Z5V6T1

12 , 158

148

MM3Z62VT1

13 , 158

44

MM3Z68VT1

13 , 158

BZX84C2V4ET1 Series
BZX84C2V4LT1
BZX84C2V4LT1 Series

14 , 132 , 135

145

44

MM3Z3V3T1

12 , 158

MM3Z3V6T1

MM3Z4V7ST1

135

MA3075WALT1

BZX84C2V7LT1

14 , 137

MA3075WALT1

BZX84C30LT1

14 , 137

MM3Z10VT1

12 , 158

MM3Z6V2ST1

BZX84C33LT1

14 , 137

MM3Z11VT1

12 , 158

MM3Z6V2T1

BZX84C36LT1

15 , 137

MM3Z12VST1

BZX84C39LT1

12

MM3Z6V8ST1

12 , 158

12 , 158
12

12
12 , 158
12

12
12 , 158
12

12
12 , 158
12

15 , 137 , 138

MM3Z12VT1

12 , 158

MM3Z6V8T1

12 , 158

BZX84C3V0LT1

14 , 137

MM3Z13VT1

12 , 158

MM3Z75VT1

13 , 158

BZX84C3V3ET1

14 , 27 , 132

MM3Z15VT1

12 , 158

MM3Z7V5ST1

BZX84C3V3LT1

14 , 137

MM3Z16VST1

BZX84C3V6LT1

14 , 137

MM3Z16VT1

14 , 137

MM3Z18VST1

BZX84C3V9LT1

12
12 , 158
12

MM3Z7V5T1
MM3Z8V2ST1
MM3Z8V2T1

12
12 , 158
12
12 , 158

BZX84C43ET1

15 , 28 , 132

MM3Z18VT1

12 , 158

MM3Z9V1ST1

BZX84C43LT1

15 , 137

MM3Z20VT1

12 , 158

MM3Z9V1T1

12 , 158

BZX84C47LT1

15 , 137

MM3Z22VT1

12 , 158

MM5Z10VT1

12

BZX84C4V3LT1

14 , 137

MM3Z24VT1

12 , 158

MM5Z11VT1

12

BZX84C4V7ET1

14 , 27 , 132

MM3Z27VT1

12 , 158

MM5Z12VST1

12

BZX84C4V7LT1

14 , 137

MM5Z12VT1

12

MM3Z2V4ST1 SERIES

http://onsemi.com
299

153

12

TVS/Zeners Device Index


Device Number

Page

Device Number

MM5Z13VT1

12

MM5Z75VT1

13

MMBZ5237ELT1

14 , 27 , 177

MM5Z15VT1

12

MM5Z7V5ST1

12

MMBZ5238BLT1

14 , 173

MM5Z16VST1

12

MM5Z7V5T1

12

MMBZ5239BLT1

14 , 173

MM5Z16VT1

12

MM5Z8V2ST1

12

MMBZ5239ELT1

14 , 27 , 177

MM5Z18VST1

12

MM5Z8V2T1

12

MMBZ5240BLT1

14 , 173

MM5Z18VT1

12

MM5Z9V1ST1

12

MMBZ5240ELT1

14 , 27 , 177

MM5Z20VT1

12

MM5Z9V1T1

12

MMBZ5241BLT1

14 , 173

MM5Z22VT1

12

MMBZ12VALT1

43

MMBZ5242BLT1

14 , 173

MM5Z24VT1

12

MMBZ15VALT1

43

MMBZ5242ELT1

14 , 27 , 177

MM5Z27VT1

12

MMBZ15VDLT1

42

MMBZ5243BLT1

14 , 173

MM5Z2V4ST1
MM5Z2V4ST1 SERIES
MM5Z2V4T1
MM5Z2V4T1 SERIES

Page

Device Number

Page

12

MMBZ15VDLT3

167

MMBZ5243ELT1

14 , 27 , 177

161

MMBZ18VALT1

43

MMBZ5244BLT1

14 , 173

12

MMBZ20VALT1

43

MMBZ5244ELT1

14 , 27 , 177

164

MMBZ27VALT1

43

MMBZ5245BLT1

14 , 173

MM5Z2V7ST1

12

MMBZ27VCLT1

42, 167

MMBZ5245ELT1

14 , 27 , 177

MM5Z2V7T1

12

MMBZ33VALT1

MM5Z30VT1

12

MMBZ5221BLT1

MM5Z33VT1

12

MMBZ5221BLT1 Series

MM5Z36VT1

13

MMBZ5221ELT1

MM5Z39VT1

13

MMBZ5221ELT1 Series

MM5Z3V0T1

12

MM5Z3V3ST1

12

MM5Z3V3T1

43

MMBZ5246BLT1

14 , 173

14 , 173

MMBZ5246ELT1

14 , 27 , 177

171

MMBZ5247BLT1

14 , 173

27 , 177

MMBZ5248BLT1

14 , 173

176

MMBZ5248ELT1

14 , 27 , 177

MMBZ5222BLT1

14 , 173

MMBZ5249BLT1

14 , 173

MMBZ5223BLT1

14 , 173

MMBZ5250BLT1

14 , 173

12

MMBZ5224BLT1

14 , 173

MMBZ5250ELT1

14 , 27 , 177

MM5Z3V6ST1

12

MMBZ5225BLT1

14 , 173

MMBZ5251BLT1

14 , 173

MM5Z3V6T1

12

MMBZ5226BLT1

14 , 173

MMBZ5252BLT1

14 , 173

MM5Z3V9ST1

12

MMBZ5226ELT1

14 , 27 , 177

MMBZ5252ELT1

14 , 27 , 178

MM5Z3V9T1

12

MMBZ5227BLT1

14 , 173

MMBZ5253BLT1

14 , 173

MM5Z43VT1

13

MMBZ5228BLT1

14 , 173

MMBZ5253ELT1

14 , 27 , 178

MM5Z47VT1

13

MMBZ5228ELT1

14 , 27 , 177

MMBZ5254BLT1

14 , 173

MM5Z4V3ST1

12

MMBZ5229BLT1

14 , 173

MMBZ5254ELT1

14 , 27 , 178

MM5Z4V3T1

12

MMBZ5229ELT1

14 , 27 , 177

MMBZ5255BLT1

14 , 173

MM5Z4V7ST1

12

MMBZ5230BLT1

14 , 173

MMBZ5255ELT1

14 , 27 , 178

MM5Z4V7T1

12

MMBZ5230ELT1

14 , 27 , 177

MMBZ5256BLT1

14 , 173

MM5Z51VT1

13

MMBZ5231BLT1

14 , 173

MMBZ5256ELT1

14 , 27 , 178

MM5Z56VT1

13

MMBZ5231ELT1

14 , 27 , 177

MMBZ5257BLT1

14 , 173

MM5Z5V1ST1

12

MMBZ5232BLT1

14 , 173

MMBZ5257ELT1

14 , 27 , 178

MM5Z5V1T1

12

MMBZ5232ELT1

14 , 27 , 177

MMBZ5258BLT1

15 , 173

MM5Z5V6ST1

12

MMBZ5233BLT1

14 , 173

MMBZ5258ELT1

15 , 28

MM5Z5V6T1

12

MMBZ5234BLT1

14 , 173

MMBZ5259BLT1

15 , 173

MM5Z62VT1

13

MMBZ5234ELT1

14 , 27 , 177

MMBZ5260BLT1

15 , 173

MM5Z68VT1

13

MMBZ5235BLT1

14 , 173

MMBZ5261BLT1

15 , 173

MM5Z6V2ST1

12

MMBZ5235ELT1

14 , 27 , 177

MMBZ5262BLT1

15 , 173

MM5Z6V2T1

12

MMBZ5236BLT1

14 , 173

MMBZ5262ELT1

15 , 28

MM5Z6V8ST1

12

MMBZ5236ELT1

14 , 27 , 177

MMBZ5263BLT1

15 , 173

MM5Z6V8T1

12

MMBZ5237BLT1

14 , 173

MMBZ5263ELT1

15 , 28 , 178

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300

TVS/Zeners Device Index


Device Number

Page

Device Number

MMBZ5264BLT1

15 , 173

MMSZ20ET1

MMBZ5265BLT1

15 , 173

MMSZ20T1

MMBZ5266BLT1

15 , 173

MMSZ22ET1

MMBZ5267BLT1

15 , 173

MMSZ22T1

MMBZ5268BLT1

15 , 173

MMSZ24ET1

MMBZ5269BLT1

173

MMBZ5270BLT1

15 , 173

MMBZ5V6ALT1

42 , 43

MMBZ5V6ALT1 Series

181

Page
196
16 , 202
196
16 , 202
196

MMSZ24T1

16 , 202

MMSZ27ET1

196

MMSZ27T1

16 , 202

MMSZ2V4ET1

16 , 27 , 195

MMBZ6V2ALT1

42

MMSZ2V4ET1 Series

MMBZ6V8ALT1

42

MMSZ2V4T1

MMBZ9V1ALT1

42

MMSZ2V4T1 Series

MMQA12VT1

46

MMSZ2V7ET1

MMQA13VT1

46

MMQA13VT3

46

MMQA15VT1

46

MMSZ30T1

MMQA18VT1

46

MMSZ33ET1

MMQA20VT1

46

MMSZ33T1

MMQA20VT3

46

MMSZ36ET1

MMQA21VT1

46

MMSZ36T1

MMQA22VT1

46

MMSZ39ET1

MMQA24VT1

46

MMSZ39T1

MMQA27VT1

46

MMSZ3V0ET1

MMQA30VT1

46

MMSZ3V0T1

MMQA33VT1

46

MMSZ3V3ET1

MMQA33VT3

46

MMSZ3V3T1

MMQA5V6T1

46

MMSZ3V6ET1

MMQA5V6T1 Series

187

MMSZ15T1
MMSZ16ET1
MMSZ16T1
MMSZ18ET1
MMSZ18T1

MMSZ4693ET1

16 , 27 , 206
16 , 211
16 , 27 , 206

MMSZ4695T1

16 , 211

MMSZ4696T1

16 , 211

16 , 202

MMSZ4697ET1

16 , 27 , 206

196

MMSZ4697T1

16 , 211

16 , 202

MMSZ4698T1

16 , 211

196

MMSZ4699ET1

16 , 27 , 206

17 , 202

MMSZ4699T1

16 , 211

196

MMSZ4700T1

16 , 211

17 , 202

MMSZ4701T1

16 , 211

16 , 27 , 195
16 , 202
16 , 27 , 195

MMSZ4702ET1
MMSZ4702T1
MMSZ4703ET1

16 , 27 , 206
16 , 211
16 , 27 , 206

16 , 202

MMSZ4703T1

16 , 211

16 , 27 , 195

MMSZ4704T1

16 , 211

MMSZ3V6T1

MMSZ43ET1

MMSZ15ET1

MMSZ4692T1

196

46

MMSZ13T1

MMSZ4692ET1

16 , 211

16 , 202

16 , 27 , 195

MMSZ13ET1

MMSZ4691T1

16 , 211
16 , 27 , 206

MMSZ30ET1

MMSZ10ET1

MMSZ12T1

MMSZ4691ET1

MMSZ2V7T1

MMQA6V8T1

MMSZ12ET1

MMSZ4690T1

16 , 211
16 , 27 , 206

16 , 211

MMSZ3V9T1

16 , 202

MMSZ4690ET1

MMSZ4694T1

MMSZ3V9ET1

16 , 27 , 195

MMSZ4689T1

16 , 27 , 206

16 , 27 , 195

46

MMSZ11T1

MMSZ4689ET1

16 , 211

16 , 211

46

MMSZ11ET1

MMSZ4688T1

Page
16 , 27 , 206

MMSZ4693T1

MMQA6V2T3

16 , 202

16 , 202

MMSZ4688ET1

200

MMQA6V2T1

MMSZ10T1

194

Device Number

16 , 202

MMSZ4705ET1

16 , 27 , 206

16 , 27 , 195

MMSZ4705T1

16 , 211

16 , 202

MMSZ4706T1

16 , 211

196

MMSZ4707T1

16 , 211

17 , 202

MMSZ4708T1

16 , 211

MMSZ43T1
MMSZ4678ET1 Series

205

MMSZ4678T1
MMSZ4678T1 Series

MMSZ4709ET1

16 , 27 , 206

16 , 211

MMSZ4709T1

16 , 211

209

MMSZ4710T1

16 , 211

16 , 27 , 195

MMSZ4679T1

16 , 211

MMSZ4711ET1

16 , 202

MMSZ4680T1

16 , 211

MMSZ4711T1

16 , 211

16 , 27 , 195

MMSZ4681T1

16 , 211

MMSZ4712T1

16 , 211

16 , 202

MMSZ4682T1

16 , 211

MMSZ4713T1

16 , 211

16 , 27 , 195

MMSZ4683T1

16 , 211

MMSZ4714T1

16 , 211

16 , 202

MMSZ4684ET1

16 , 27 , 206

16 , 27 , 206

MMSZ4715T1

17 , 211

16 , 27 , 195

MMSZ4684T1

16 , 211

MMSZ4716T1

17 , 211

16 , 202

MMSZ4685T1

16 , 211

MMSZ4717ET1

16 , 27 , 195

MMSZ4686T1

16 , 211

MMSZ4717T1

17 , 211

16 , 202

MMSZ4687T1

16 , 211

MMSZ4V3ET1

16 , 27 , 195

http://onsemi.com
301

17 , 28 , 206

TVS/Zeners Device Index


Device Number
MMSZ4V3T1
MMSZ4V7ET1
MMSZ4V7T1
MMSZ51ET1

Page

Device Number

Page

16 , 202

MMSZ5244ET1

16 , 27 , 220

16 , 27 , 195

MMSZ5245BT1

16 , 216

16 , 202

MMSZ5245ET1

16 , 27 , 220

Device Number
MMSZ6V8T1
MMSZ7V5ET1
MMSZ7V5T1

16 , 27 , 195
16 , 202

196

MMSZ5246BT1

16 , 216

MMSZ51T1

17 , 202

MMSZ5246ET1

16 , 27 , 220

MMSZ5221BT1

16 , 216

MMSZ5247BT1

16 , 216

MMSZ9V1ET1

214

MMSZ5248BT1

16 , 216

MMSZ9V1T1

16 , 27 , 220

MMSZ5248ET1

16 , 27 , 220

MPTE10

24

MMSZ5221BT1 Series
MMSZ5221ET1
MMSZ5221ET1 Series

MMSZ8V2ET1

Page
16 , 202

MMSZ8V2T1

16 , 27 , 195
16 , 202
16 , 27 , 195
16 , 202

219

MMSZ5250BT1

16 , 216

MPTE12

24

16 , 216

MMSZ5250ET1

16 , 27 , 220

MPTE15

24

MMSZ5223BT1

16 , 216

MMSZ5251BT1

16 , 216

MPTE18

24

MMSZ5223ET1

16 , 27 , 220

MMSZ5252BT1

16 , 216

MPTE22

24

MMSZ5224BT1

16 , 216

MMSZ5252ET1

16 , 27 , 220

MPTE5

24

MMSZ5225BT1

16 , 216

MMSZ5253BT1

16 , 216

MPX4729A

10

MMSZ5226BT1

16 , 216

MMSZ5254BT1

16 , 216

MSQA6V1W5

47

MMSZ5226ET1

16 , 27 , 220

MMSZ5255BT1

16 , 216

MSQA6V1W5T2

223

MMSZ5227BT1

16 , 216

MMSZ5255ET1

16 , 27 , 220

MZP4729A

228

MMSZ5228BT1

16 , 216

MMSZ5256BT1

16 , 216

MZP4729A Series

226

MMSZ5228ET1

16 , 27 , 220

MMSZ5257BT1

16 , 216

MZP4734A

10 , 228

MMSZ5229BT1

16 , 216

MMSZ5257ET1

16 , 27 , 220

MZP4735A

10 , 228

MMSZ5229ET1

16 , 27 , 220

MMSZ5258BT1

17 , 216

MZP4736A

10 , 228

MMSZ5230BT1

16 , 216

MMSZ5259BT1

17 , 216

MZP4737A

10 , 228

MMSZ5231BT1

16 , 216

MMSZ5260BT1

17 , 216

MZP4738A

10 , 228

MMSZ5231ET1

16 , 27 , 220

MMSZ5261BT1

17 , 216

MZP4740A

10 , 228

MMSZ5232BT1

16 , 216

MMSZ5262BT1

17 , 216

MZP4741A

10 , 228

MMSZ5232ET1

16 , 27 , 220

MMSZ5263BT1

17 , 216

MZP4744A

10 , 228

MMSZ5233BT1

16 , 216

MMSZ5263ET1

17 , 28 , 220

MZP4745A

10 , 228

MMSZ5234BT1

16 , 216

MMSZ5264BT1

17 , 216

MZP4746A

10 , 228

MMSZ5234ET1

16 , 27 , 220

MMSZ5265BT1

17 , 216

MZP4749A

10 , 228

MMSZ5235BT1

16 , 216

MMSZ5266BT1

17 , 216

MZP4750A

11 , 228

MMSZ5235ET1

16 , 27 , 220

MMSZ5267BT1

17 , 216

MZP4751A

11 , 228

MMSZ5236BT1

16 , 216

MMSZ5268BT1

17 , 216

MZP4752A

228

MMSZ5236ET1

16 , 27 , 220

MMSZ5269BT1

17 , 216

MZP4753A

228

MMSZ5237BT1

16 , 216

MMSZ5270BT1

17 , 216

NZL5V6AXV3T1

45

MMSZ5237ET1

16 , 27 , 220

MMSZ5272BT1

216

NZL5V6AXV3T1

45

MMSZ5238BT1

16 , 216

MMSZ5272BT3

MMSZ5239BT1

16 , 216

MMSZ56ET1

MMSZ5240BT1

16 , 216

MMSZ56T1

MMSZ5240ET1

16 , 27 , 220

MMSZ5241BT1

16 , 216

MMSZ5V1T1

MMSZ5242BT1

16 , 216

MMSZ5V6ET1

MMSZ5242ET1

16 , 27 , 220

MMSZ5243BT1

16 , 216

MMSZ5243ET1

16 , 27 , 220

MMSZ5244BT1

16 , 216

MMSZ5222BT1

17

MMSZ5V1ET1

45

17 , 202

NZL7V5AXV3T1

45

16 , 202
16 , 27 , 195
16 , 202

MMSZ6V2ET1

16 , 27 , 195

MMSZ6V2T1

16 , 202

MMSZ6V8ET1

16 , 27 , 195

http://onsemi.com
302

232

NZL6V8AXV3T1

16 , 27 , 195

MMSZ5V6T1

NZL5V6AXV3T1 Series

196

P6KE100A

22 , 238

P6KE10A

22 , 238

P6KE110A

22 , 238

P6KE11A

22 , 238

P6KE120A

22 , 238

P6KE12A

22 , 238

P6KE130A

22 , 238

TVS/Zeners Device Index


Device Number

Page

Device Number

Page

Device Number

Page

P6KE13A

22 , 238

P6SMB15CAT3

38 , 243

P6SMB9.1AT3

37 , 249

P6KE150A

23 , 238

P6SMB160AT3

37 , 249

P6SMB91AT3

37 , 249

P6KE15A

22 , 238

P6SMB16AT3

37 , 249

P6SMB91CAT3

38 , 243

P6KE160A

23 , 238

P6SMB16CAT3

38 , 243

SA100A

21 , 255

P6KE16A

22 , 238

P6SMB170AT3

249

SA10A

20 , 254

P6KE170A

23 , 238

P6SMB180AT3

37 , 249

SA110A

21 , 255

P6KE180A

23 , 238

P6SMB18AT3

37 , 249

SA11A

20 , 254

P6KE18A

22 , 238

P6SMB18CAT3

38 , 243

SA120A

21 , 255

P6KE200A

23 , 238

P6SMB200AT3

37 , 249

SA12A

20 , 254

P6KE20A

22 , 238

P6SMB20AT3

37 , 249

SA130A

21 , 255

P6KE22A

22 , 238

P6SMB20CAT3

38 , 243

SA13A

20 , 254

P6KE24A

22 , 238

P6SMB22AT3

37 , 249

SA14A

20 , 254

P6KE27A

22 , 238

P6SMB22CAT3

38 , 243

SA150A

P6KE30A

22 , 238

P6SMB24AT3

37 , 249

SA15A

20 , 254

P6KE33A

22 , 238

P6SMB24CAT3

38 , 243

SA160A

21 , 255

P6KE36A

22 , 238

P6SMB27AT3

37 , 249

SA16A

20 , 254

P6KE39A

22 , 238

P6SMB27CAT3

38 , 243

SA170A

21 , 255

P6KE43A

22 , 238

P6SMB30AT3

37 , 249

SA17A

20 , 254

P6KE47A

22 , 238

P6SMB30CAT3

38 , 243

SA18A

20 , 254

P6KE51A

22 , 238

P6SMB33AT3

37 , 249

SA20A

20 , 254

P6KE56A

22 , 238

P6SMB33CAT3

38 , 243

SA22A

254

P6KE6.8A

22 , 238

P6SMB36AT3

37 , 249

SA24A

20 , 254

P6SMB36CAT3

38 , 243

SA26A

20 , 254

P6KE6.8A Series

236

255

P6KE62A

22 , 238

P6SMB39AT3

37 , 249

SA28A

20 , 254

P6KE68A

22 , 238

P6SMB39CAT3

38 , 243

SA30A

20 , 254

P6KE7.5A

22 , 238

P6SMB43AT3

37 , 249

SA33A

20 , 255

P6KE75A

22 , 238

P6SMB43CAT3

38 , 243

SA36A

20 , 255

P6KE8.2A

22 , 238

P6SMB47AT3

37 , 249

SA40A

20 , 255

P6KE82A

22 , 238

P6SMB47CAT3

38 , 243

SA43A

20 , 255

P6KE9.1A

22 , 238

P6SMB51AT3

37 , 249

SA45A

20 , 255

P6KE91A

22 , 238

P6SMB51CAT3

38 , 243

SA48A

20 , 255

P6SMB100AT3

37 , 249

P6SMB56AT3

37 , 249

SA5.0A

20 , 254

P6SMB10AT3

37 , 249

P6SMB56CAT3

38 , 243

SA5.0A Series

P6SMB110AT3

37 , 249

P6SMB6.8AT3

37 , 249

SA51A

20 , 255

P6SMB11AT3

37 , 249

P6SMB6.8AT3 Series

247

SA58A

21 , 255

P6SMB11CAT3

38 , 243

P6SMB62AT3

37 , 249

SA6.0A

20 , 254

P6SMB62CAT3

38 , 243

SA60A

21 , 255

P6SMB11CAT3 Series

242

253

P6SMB120AT3

37 , 249

P6SMB68AT3

37 , 249

SA64A

21 , 255

P6SMB12AT3

37 , 249

P6SMB68CAT3

38 , 243

SA7.0A

20 , 254

P6SMB12CAT3

38 , 243

P6SMB7.5AT3

37 , 249

SA7.5A

20 , 254

P6SMB130AT3

37 , 249

P6SMB75AT3

37 , 249

SA70A

21 , 255

P6SMB13AT3

37 , 249

P6SMB75CAT3

38 , 243

SA78A

21 , 255

P6SMB13CAT3

38 , 243

P6SMB8.2AT3

37 , 249

SA8.0A

20 , 254

P6SMB150AT3

37 , 249

P6SMB82AT3

37 , 249

SA8.5A

20 , 254

P6SMB15AT3

37 , 249

P6SMB82CAT3

38 , 243

SA9.0A

20 , 254

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303

TVS/Zeners Device Index


Device Number

Page

Page

Device Number

Page

31

SMF6.0A

30

12

SMF17A

30

SMF6.5A

30

258

SMF18A

30

SMF60A

30

SD12T1

12

SMF20A

30

SMF64A

30

SM05T1

44

SMF22A

30

SMF7.0A

30

SM12T1

44 , 261

SMF24A

30

SMF7.5A

30

SMBJ12AON

39 , 266

SMF26A

30

SMF70A

30

SMF100A

31

SMF28A

30

SMF75A

31

SMF10A

30

SMF30A

30

SMF78A

31

SMF110A

31

SMF33A

30

SMF8.0A

30

SMF11A

30

SMF36A

30

SMF8.5A

30

SMF120A

31

SMF40A

30

SMF85A

31

SMF12A

30

SMF43A

30

SMF9.0A

30

SMF130A

31

SMF45A

30

SMF90A

31

SMF13A

30

SMF48A

30

SMS05T1

47

SMF14A

30

SMF5.0A

30

SMS05T1 Series

SMF150A

31

SMF5.0AT1 Series

SMF15A

30

SMF160A
SMF16A

SD05T1
SD05T1 Series

21 , 255

Device Number
SMF170A

SA90A

277

271

SMS12T1

47

SMF51A

30

SMS15T1

47

31

SMF54A

30

SMS24T1

47

30

SMF58A

30

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