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V0.3
Data Sheet
Jul 2006
DESCRIPTION
The RTC6691 silicon-germanium (SiGe) power amplifier (PA) is designed to operate in
2.4GHz ISM band, compatible with 802.11b/g wireless LAN system with high power, high
gain. The Amplifier consists of 3 gain stages with inter-stage matching, build-in input
matching network, and a power detector for close loop power control operation. In 802.11g
mode (OFDM 64QAM, 54Mbps), it provides a low EVM (Error-Vector magnitude) of 3% at
+21.5dBm linear output power. The device is packaged in a tiny industry-standard 16-lead
surface mount package QFN16 3x3.
FEATURE
APPLICATION
1
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Specifications subject to change without notice
RTC6691
Data Sheet
V0.3
PIN FUNCTION DESCRIPTION
Pin
Function
1
2
3
4
5
6
NC
RFin
RFin
NC
Vccb
Vref1
Vref2
8
9
10
11
12
13
14
15
16
Det_ref
Det
RFout
RFout
Vcc3
NC
Vcc2
NC
Vcc1
Jul 2006
Description
Not connected
RF input. Input matching network is built on chip.
Same as pin 2
Not connected
Power supply for bias circuit, typically 3.3V
Bias Control voltage 1. typically 2.9V.
Pin 6,7 can be used to control PA on/off.
Bias Control voltage 2. typically 2.9V.
Pin 6,7 can be used to control PA on/off.
Power detector enable. typically 3V.
Detector output voltage for output power index
RF output.
Same as pin 10
Power supply for power stage-3, typically 3.3V
Not connected
Power supply for power stage-2, typically 3.3V
Not connected
Power supply for power stage-1, typically 3.3V
RATING
-0.5 to +5.0
0.0 to +4.0
+10
-40 to +85
-40 to +150
UNITS
V
V
dBm
DC ELECTRICAL CHRACTERISTICS
T=25, Vcc=3.3v, Freq=2.45GHz
PARAMETER
CONDITION
MIN
TYP
MAX
UNITS
Vcc1
3.0
3.3
4.2
Volts
Vcc2
3.0
3.3
4.2
Volts
Vcc3
3.0
3.3
4.2
Volts
Supply Voltages
Vref1
2.9
Volts
Vref2
2.9
Volts
240
mA
Supply Currents
Icc1 + Icc2 + Icc3
(for 802.11g usage)
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Specifications subject to change without notice
RTC6691
Data Sheet
V0.3
Jul 2006
Pout = 26 dBm
360
mA
Ioff
Standby current
0.05
uA
Iref1
1.2
mA
Iref2
2.0
mA
Vpd
Pout=22 dBm
1.09
PDR
25
dBm
AC ELECTRICAL CHRACTERISTICS
T=25, Vcc=3.3V, Freq=2.45GHz
PARAMETER
CONDITION
Frequency Range
Saturated Output Power
MIN
TYP
MAX
UNITS
2.4
2.45
2.5
GHz
29
dBm
Measured @ P1dB
36.3
Pin=-30dBm
33.5
dB
Input VSWR
Pin=-30 dBm
2:1
21.5
dBm
23.5
dBm
26
dBm
within band(2.4~2.5GHz)
+/-0.1
dB
Linear efficiency
Gain Flatness
Input return loss
-8
dB
-11
dB
-40
dBc
<100
ns
3
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Specifications subject to change without notice
RTC6691
V0.3
Data Sheet
Jul 2006
S-PARAMETER
4
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Specifications subject to change without notice
RTC6691
Data Sheet
V0.3
Jul 2006
Pout VS EVM
300
280
260
240
220
EVM(%)
ICC(mA)
200
180
ICC (mA)
EVM (%)
160
140
1
120
100
0 1 2 3 4 5
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Pout (dBm)
600
35
550
500
30
450
400
25
350
300
250
20
ICC(mA)
Pout(dBm)
Gain(dB)
200
150
15
100
ICC (mA)
Power Sweep
10
-21
-19
-17
-15
-13
-11
-9
-7
-5
-3
-1
Pin(dBm)
5
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Specifications subject to change without notice
RTC6691
Data Sheet
V0.3
Jul 2006
Power Detector
Pout vs Vpd
1.6
Vpd (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
12
14
16
18
20
22
24
Pout (dBm)
Pout = 26 dBm
6
www.richwave.com.tw
Specifications subject to change without notice
RTC6691
V0.3
Data Sheet
Jul 2006
7
www.richwave.com.tw
Specifications subject to change without notice
RTC6691
V0.3
Data Sheet
Jul 2006
EVB LAYOUT :
Top layer
MidLayer1
MidLayer2
Bottom layer
Note : 1. Vcc1, Vcc2, Vcc3 and Vccb are connected together and applied to 3.3V.
Vref1 and Vref2 can be connected together and applied to the other 2.9V.
2. The evaluation board is 4-layer PCB using FR4 material. The thickness
between top layer and Midlayer1 (GND) is 8 mil. If the PCB thickness is
changed, 50 transmission line dimension needs to be re-calculated.
8
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Specifications subject to change without notice
RTC6691
V0.3
Data Sheet
Jul 2006
PACKAGE :
Quad Flat No-Lead Plastic Package ( QFN16 3x3 )
9
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Specifications subject to change without notice