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Preliminary Datasheet

RQA0009TXDQS

R07DS0492EJ0200
(Previous: REJ03G1520-0100)
Rev.2.00
Jun 28, 2011

Silicon N-Channel MOS FET


Features
High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
Compact package capable of surface mounting
Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)

Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
3

1. Gate
2. Source
3. Drain
4. Source

1
4

2, 4

Note:

Marking is TX.

Absolute Maximum Ratings


(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature

Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg

Ratings
16
5
3.2
15
150
55 to +150

Unit
V
V
A
W
C
C

Note: Value at Tc = 25C

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

Page 1 of 21

RQA0009TXDQS

Preliminary

Electrical Characteristics
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power

Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency


Output Power

PAE
Pout

Power Added Efficiency

PAE

Min.

0.15
2.2

Typ

0.5
3.2
76
40
3.5
33.1
2.0
65.7
38.6
7.2
62.5
33.0
2.0
68.5
38.8
7.6

Max.
15
2
0.8
4.4

Unit
A
A
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W

36.8
4.8
60

69.2
33.1
2.1
66.4
39.0
8.0
67.9
35.2
3.3
60
37.8
6.0
65

%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%

Test Conditions
VDS = 16 V, VGS = 0
VGS = 5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.6 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 3.6 V, IDQ = 200 mA
f = 155 MHz,
Pin = +20 dBm (100mW)
VDS = 7.0 V, IDQ = 200 mA
f = 155 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 360 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 360 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 465 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 465 MHz,
Pin = +25 dBm (316 mW)
VDS = 4.8 V, IDQ = 300 mA
f = 465 MHz,
Pin = +17 dBm (50 mW)
VDS = 6 V, IDQ = 180 mA
f = 520 MHz,
Pin = +25 dBm (316 mW)

Main Characteristics
Typical Output Characteristics

20

Pulse Test

4
2.0 V

Drain Current ID (A)

Channel Power Dissipation Pch (W)

Maximum Channel Power


Dissipation Curve

15

10

50

100

150

Case Temperature TC (C)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

200

1.75 V

3
1.5 V
2
1.25 V
1

VGS = 1.0 V

10

Drain to Source Voltage VDS (V)

Page 2 of 21

RQA0009TXDQS

Preliminary
Forward Transfer Admittance
vs. Drain Current

4
VDS = 6 V
Pulse Test
3
|yfs|

ID

0
0

0.5

1.0

1.5

2.0

Forward Transfer Admittance |yfs| (S)

Drain Current ID (A)


Forward Transfer Admittance |yfs| (S)

Typical Transfer Characterisitics

1.0

0.1
0.1

1.0

10.0

Drain Current ID (A)

Input Capacitance vs.


Gate to Source Voltage

Output Capacitance vs.


Drain to Source Voltage

80

70

60

50
VDS = 0
f = 1 MHz
40
-5 -4 -3 -2 -1

Output Capacitance Coss (pF)

1000

100

VGS = 0
f = 1 MHz
10
0.1

10

Gate to Source Voltage VGS (V)

Drain to Source Voltage VDS (V)

Reverse Transfer Capacitance vs.


Drain to Gate Voltage

MSG, MAG vs. Frequency

100
VGS = 0
f = 1 MHz

10

1
0.1

Drain to Gate Voltage VDG (V)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

10

Maximum Stable Gain MSG (dB)


Maximum Available Gain MAG (dB)

Input Capacitance Ciss (pF)

VDS = 6 V
Pulse Test

Gate to Source Voltage VGS (V)

90

Reverse Transfer Capacitance Crss (pF)

10.0

30
VDS = 6 V
ID = 180 mA

25
MSG
20
15
MAG
10
5
0
0

500

1000

1500

2000

Frequency f (MHz)

Page 3 of 21

RQA0009TXDQS

Preliminary

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)


VDD

VGG

C4

C5

C12

C13

R2

C11
C3

50

C1

C2

L4
R1

L1

C9
L2

C6

C7

L3

C10

50
RF OUT

RF IN
C8

L1
L2
L3
L4
R1
R2

100 pF Chip Capacitor


27 pF Chip Capacitor
1000 pF Chip Capacitor
1 F/+16V Chip Tantalum Capacitor
18 pF Chip Capacitor
22 pF Chip Capacitor
56 pF Chip Capacitor
4 pF Chip Capacitor

33 nH Chip Inductor
3.6 nH Chip Inductor
7.5 nH Chip Inductor
8 Turns D: 0.5 mm, 2.4 mm Enamel Wire
33 Chip Resistor
1 k Chip Resistor

Output Power, Drain Current


vs. Input Power

Pout
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz

30
25

ID

20

1.5
1

15

0.5

10
5

10

15

20

25

30

60
PG

20

40

10

20
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz

0
30

10

15

20

25

0
30

Input Power Pin (dBm)

Input Power Pin (dBm)

Output Power, Drain Current


vs. Frequency

Power Gain, Power Added Efficiency


vs. Frequency

40
Pout

35

30

2.5

25

30
25
ID

VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm

15

1.5
1
0.5

10
0
120 130 140 150 160 170 180 190

Frequency f (MHz)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

Power Gain PG (dB)

20

Drain Current ID (A)

2.5

35

Power Gain PG (dB)

PAE

Drain Current ID (A)

Output Power Pout (dBm)

80

40

80
PAE

70
60

20
15

PG

10
5
0

50
40

VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm

30

Power Added Efficiency PAE (%)

40

Output Power Pout (dBm)

Power Gain, Power Added Efficiency


vs. Input Power

Power Added Efficiency PAE (%)

C1, C3, C10, C11


C2
C4, C13
C5, C12
C6
C7
C8
C9

20
120 130 140 150 160 170 180 190

Frequency f (MHz)

Page 4 of 21

RQA0009TXDQS

Preliminary

ID

20

1
IDQ = 200 mA
f = 155MHz
Pin = +20dBm

15

3.5

4.5

10

20
IDQ = 200 mA
f = 155 MHz
Pin = +20dBm
3.5

4.5

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current
40

25

1.5
ID

1
VDS = 3.6V
0.5
f = 155 MHz
Pin = +20 dBm
0
300
400
500

15

100

200

Power Gain PG (dB)

2.5
2

20

80
PAE

Pout

Drain Current ID (A)

30

60

20

40
PG

10

20

VDS = 3.6 V
f = 155 MHz
Pin = +20 dBm

0
0

100

200

300

400

0
500

Idling Current IDQ (mA)

Idling Current IDQ (mA)

Output Power, Drain Current


vs. Input Power

Power Gain, Power Added Efficiency


vs. Input Power
3.0

40
35

2.5

Pout

2.0

30
ID

25

1.5
1.0

20
VDS = 7 V
f = 155 MHz
IDQ = 200 mA

15
10
5

10

15

20

25

Input Power Pin (dBm)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

0.5
0
30

Power Gain PG (dB)

Pout (dBm)
Output Power

PG

0
3

30

40

Drain to Source Voltage VDS (V)

35

10
0

Pout (dBm)

20

Drain to Source Voltage VDS (V)

40

Output Power

0.5

60

40

80

30

60
PG

20

40

PAE

10

VDS = 7 V
f = 155 MHz
IDQ = 200 mA

0
0

10

15

20

25

20

0
30

Power Added Efficiency PAE (%)

1.5

30

Power Added Efficiency PAE (%)

25

80
PAE

Power Gain PG (dB)

Drain Current ID (A)

30

Drain Current ID (A)

Pout (dBm)
Output Power

2.5

Pout

35

10

40

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage

Output Power, Drain Current


vs. Drain to Source Voltage

Input Power Pin (dBm)

Page 5 of 21

RQA0009TXDQS

Preliminary

Output Power, Drain Current


vs. Frequency

1.5

20

VDS = 7V
IDQ = 200 mA 0.5
Pin = +25 dBm
0
10
120 130 140 150 160 170 180 190
15

20

60

15

50
PG

10

40

VDS = 7V
30
IDQ =200 mA
Pin = +25 dBm
0
20
120 130 140 150 160 170 180 190

Frequency f (MHz)

Frequency f (MHz)

Output Power, Drain Current


vs. Drain to Source Voltage

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage
40

30

2
ID

20

IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
6

80
PAE

Power Gain PG (dB)

Pout
40

30

60

20

40
PG

10

0
2

0
10

20

IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
4

0
10

Drain to Source Voltage VDS (V)

Drain to Source Voltage VDS (V)

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current

40

40

80

Pout
2.5

30

2
1.5

25

ID
1

20
15

100

200

VDS = 7V
0.5
Pin = +25 dBm
f = 155 MHz
0
300
400
500

Idling Current IDQ (mA)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

PAE

Power Gain PG (dB)

35

10
0

70

Drain Current ID (A)

Pout (dBm)
Output Power

PAE

30

60

20

40
PG

10

0
0

20
VDS = 7 V
Pin = +25 dBm
f = 155 MHz
100

200

300

400

Power Added Efficiency PAE (%)

25

30

Power Added Efficiency PAE (%)

ID

10
2

Pout (dBm)

25

50

Output Power

2.5

Power Gain PG (dB)

30

30

Drain Current ID (A)

Pout

35

Drain Current ID (A)

Output Power

Pout (dBm)

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Frequency

0
500

Idling Current IDQ (mA)

Page 6 of 21

RQA0009TXDQS

Preliminary

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 360 MHz)


VDD
C14

VGG
C5

C15

C6

C13
C4
L4

R1

C3

C11

L1

L3

50

C12

RFOUT

RFIN
C2
22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 F / +16V Chip Tantalum Capacitor
5 pF Chip Capacitor
12 pF Chip Capacitor

C8

L1
L2
L3
L4
R1

6.8 nH Chip Inductor


1.0 nH Chip Inductor
1.6 nH Chip Inductor
8 Turns D: 0.5 mm, 2.4 mm Enamel Wire
6.8k Chip Resistor

Power Gain, Power Added Efficiency


vs. Input Power

Output Power, Drain Current


vs. Input Power
3

Pout
30

25

1.5

20

ID

15

10

15

PG
20

40

10

20
VDS = 3.6 V
IDQ = 200 mA
f = 360 MHz
0

10

15

20

25

0
30

Input Power Pin (dBm)

Output Power, Drain Current


vs. Frequency

Power Gain, Power Added Efficiency


vs. Frequency

Pout

30

2.5

25

30
25
ID

20

VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm

1.5
1

15
10
300

60

Input Power Pin (dBm)

40
35

30

0.5

320

340

360

380

Frequency f (MHz)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

0
400

Power Gain PG (dB)

VDS = 3.6 V
IDQ = 200 mA 0.5
f = 360 MHz
0
20
25
30

Drain Current ID (A)

2.5

35

Power Gain PG (dB)

PAE

10

Output Power Pout (dBm)

80

40

Drain Current ID (A)

Output Power Pout (dBm)

40

C10

Power Added Efficiency PAE (%)

C1
C2, C3,C8,C10
C4, C13
C5, C12, C15
C6, C14
C7
C9, C11

C7

80
PAE

70
60

20
15

PG

10

40
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm

5
0

300

50

350

30
20
400

Power Added Efficiency PAE (%)

50 C1

C9
L2

Frequency f (MHz)

Page 7 of 21

RQA0009TXDQS

Preliminary

1.5

20

ID
IDQ = 200 mA
f = 360MHz
Pin=+20dBm

15

3.5

4.5

20

40
PG

10

20

IDQ = 200 mA
f = 360 MHz
Pin=+20dBm

0
3

0
3.5

4.5

Drain to Source Voltage VDS (V)

Drain to Source Voltage VDS (V)

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current
40

80

Pout

35

2.5
2

30

VDS = 3.6V
1.5
f = 360 MHz
Pin = +20 dBm
1

25
20

ID

0.5

15

100

300

200

400

0
500

60

20

40
PG

10

20

VDS = 3.6 V
f = 360 MHz
Pin = +20 dBm
100

200

300

400

0
500

Idling Current IDQ (mA)

Idling Current IDQ (mA)

Output Power, Drain Current


vs. Input Power

Power Gain, Power Added Efficiency


vs. Input Power

40

35

2.5
Pout

30

25

1.5
ID

20

1
VDS = 7 V
IDQ = 200 mA
f = 360 MHz

15
10
0

30

0
0

10

15

20

25

Input Power Pin (dBm)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

0.5
0
30

80

40
PAE

Power Gain PG (dB)

10
0

Power Gain PG (dB)

PAE

Drain Current ID (A)

Pout (dBm)

0.5

60

30

60
PG

20

40

10

VDS = 7 V
IDQ = 200 mA
f = 360 MHz

0
0

10

15

20

25

20

Power Added Efficiency PAE (%)

25

30

Power Added Efficiency PAE (%)

Power Gain PG (dB)

30

Drain Current ID (A)

2.5

Pout

Drain Current ID (A)

Pout (dBm)
Output Power

35

40

Output Power

80
PAE

10

Output Power Pout (dBm)

40

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage

Output Power, Drain Current


vs. Drain to Source Voltage

0
30

Input Power Pin (dBm)

Page 8 of 21

RQA0009TXDQS

Preliminary

25

30

2
1.5

20

1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm

15
10
300

0.5
0
400

350

10

40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm

300

30
20
400

350

Output Power, Drain Current


vs. Drain to Source Voltage

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage
40

80

Pout

40

30
ID
20

IDQ = 200 mA 1
Pin = +25 dBm
f = 360MHz
6

Power Gain PG (dB)

PAE

Drain Current ID (A)

30

60

20

40
PG

10

20

IDQ = 200 mA
Pin = +25 dBm
f = 360MHz

0
2

0
10

0
10

Drain to Source Voltage VDS (V)

Drain to Source Voltage VDS (V)

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current

40

40

3
Pout

35

2.5

30

2
1.5

25
ID

20
15
10
0

100

80
PAE

200

VDS = 7V
0.5
Pin = +25 dBm
f = 360 MHz
0
300
400
500

Idling Current IDQ (mA)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

Power Gain PG (dB)

Pout (dBm)
Output Power

50

Frequency f (MHz)

10
2

Pout (dBm)

PG

15

Frequency f (MHz)

50

Output Power

60

20

Drain Current ID (A)

Output Power Pout (dBm)

ID

25

70

PAE

30

60

20

40
PG

10

0
0

VDS = 7 V
Pin = +25 dBm
f = 360 MHz
100

200

300

400

20

0
500

Power Added Efficiency PAE (%)

2.5

Pout

80

Power Added Efficiency PAE (%)

35

Power Gain PG (dB)

30

Drain Current ID (A)

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Frequency

Output Power, Drain Current


vs. Frequency

Idling Current IDQ (mA)

Page 9 of 21

RQA0009TXDQS

Preliminary

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 465 MHz)


VDD
C14

VGG
C5

C15

C6

C13
C4
L4

R1

C3

C11

L1

L3

C12

50
RFOUT

RFIN

22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 F / +16V Chip Tantalum Capacitor
7 pF Chip Capacitor

C9
C11
L1
L2, L3
L4
R1

2.5
Pout

25

1.5
1

ID
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz

15
10
0

10

15

20

25

PAE

0.5

Power Gain PG (dB)

35

80

40

Drain Current ID (A)

30

60

PG

20

10

10

15

20

25

0
30

Input Power Pin (dBm)

Output Power, Drain Current


vs. Frequency

Power Gain, Power Added Efficiency


vs. Frequency
30

35

2.5

25

30

25

1.5

Pout

ID

20

VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
450

460

0.5

470

480

Frequency f (MHz)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

0
490

Power Gain PG (dB)

10
440

20

VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz

Input Power Pin (dBm)

40

15

40

0
30

Drain Current ID (A)

Output Power Pout (dBm)

40

20

12 pF Chip Capacitor
2 pF Chip Capacitor
2.7 nH Chip Inductor
1.0 nH Chip Inductor
8 Turns D: 0.5 mm,f2.4mm Enamel Wire
6.8k Chip Resistor

Power Gain, Power Added Efficiency


vs. Input Power

Output Power, Drain Current


vs. Input Power

30

C10

80
PAE

70
60

20
PG

15

50

10
5
0

40
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm

440

450

460

30

470

480

20
490

Power Added Efficiency PAE (%)

C1
C2, C3, C7, C10
C4, C13
C5, C12, C15
C6, C14
C8

Output Power Pout (dBm)

C8

C7

C2

Power Added Efficiency PAE (%)

50 C1

C9
L2

Frequency f (MHz)

Page 10 of 21

RQA0009TXDQS

Preliminary

1.5

20

ID
IDQ = 200 mA
f = 465MHz
Pin=+20dBm

15

3.5

4.5

20

40
PG

10

0
3.5

4.5

Drain to Source Voltage VDS (V)

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current
40

80
PAE

2.5

30

25

1.5
ID
1

20

VDS = 3.6V
0.5
Pin = +20 dBm
f = 465 MHz
0
300
400
500

15

100

200

Power Gain PG (dB)

Pout
30

60
VDS = 3.6 V
Pin = +20 dBm
f = 465 MHz

20
PG

40

10

0
0

20

100

200

300

400

0
500

Idling Current IDQ (mA)

Idling Current IDQ (mA)

Output Power, Drain Current


vs. Input Power

Power Gain, Power Added Efficiency


vs. Input Power
3

35

2.5
Pout

30

25

1.5

20

ID
VDS = 7 V
IDQ = 200 mA
f = 465 MHz

15
10
5

10

15

20

25

Input Power Pin (dBm)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

0.5
0
30

40

Power Gain PG (dB)

40

Drain to Source Voltage VDS (V)

35

10
0

20

IDQ = 200 mA
f = 465 MHz
Pin=+20dBm

0
3

Drain Current ID (A)

Pout (dBm)

0.5

60

80
PAE

30

60

PG

20

40

10

VDS = 7 V
IDQ = 200 mA
f = 465 MHz

0
0

10

15

20

25

20

0
30

Power Added Efficiency PAE (%)

25

30

Power Added Efficiency PAE (%)

Power Gain PG (dB)

30

Drain Current ID (A)

2.5

Pout

Drain Current ID (A)

Pout (dBm)
Output Power

35

40

Output Power

80
PAE

10

Output Power Pout (dBm)

40

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage

Output Power, Drain Current


vs. Drain to Source Voltage

Input Power Pin (dBm)

Page 11 of 21

RQA0009TXDQS

Preliminary

25

30

2
1.5

20

1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm

15
10
440

450

460

470

480

0.5
0
490

50

10

40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm

440

450

460

30

470

480

20
490

Frequency f (MHz)

Output Power, Drain Current


vs. Drain to Source Voltage

Power Gain, Power Added Efficiency


vs. Drain to Source Voltage
40

30

2
ID

20

IDQ = 200 mA
Pin = +25dBm
f = 465MHz
6

Power Gain PG (dB)

Pout
40

Drain Current ID (A)

80

30

60

20

40
PG

10

0
10

Drain to Source Voltage VDS (V)

Drain to Source Voltage VDS (V)

Output Power, Drain Current


vs. Idling Current

Power Gain, Power Added Efficiency


vs. Idling Current

40

40

3
2.5

30

2
1.5

25

ID
1

20
15

100

80
PAE

Pout
35

10
0

20

IDQ = 200 mA
Pin = +25dBm
f = 465MHz

0
2

0
10

200

VDS = 7V
0.5
Pin = +25 dBm
f = 465 MHz
0
300
400
500

Idling Current IDQ (mA)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

Power Gain PG (dB)

Pout (dBm)
Output Power

PG

15

PAE

10
2

Pout (dBm)

60

Frequency f (MHz)

50

Output Power

70

20

Drain Current ID (A)

Output Power Pout (dBm)

ID

25

PAE

30

60

20

40
PG

10

0
0

20
VDS = 7 V
Pin = +25 dBm
f = 465 MHz
100

200

300

400

0
500

Power Added Efficiency PAE (%)

2.5

Pout

80

Power Added Efficiency PAE (%)

35

Power Gain PG (dB)

30

Drain Current ID (A)

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Frequency

Output Power, Drain Current


vs. Frequency

Idling Current IDQ (mA)

Page 12 of 21

RQA0009TXDQS

Preliminary

Evaluation Circuit (f = 465 MHz@VDS=4.8V)


C7

C6

C13

C14

VG

VD

R2
C5

C12

R1

L3
L1

50 C1

L2

C11 50
RFOUT

RFIN
C2

C1, C5, C11, C12


C2, C8
C3
C4, C9, C10
C6, C13
C7, C14
L1
L2
L3
R1
R2

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

C3

C4

C8

C9

C10

100 pF Chip Capacitor


22 pF Chip Capacitor
15 pF Chip Capacitor
10 pF Chip Capacitor
2200 pF Chip Capacitor
1 F / 35 V Chip Tantalum Capacitor
1 nH Chip Inductor
1.8 nH Chip Inductor
8 Turns D: 0.5 mm, 2.4 mm Enamel Wire
670 Chip Resistor
6.8 k Chip Resistor

Page 13 of 21

RQA0009TXDQS

Preliminary

Output Power, Drain Current


vs. Input Power
1.6

25

1.0

ID

20

0.8

15

0.6

10

0.4

VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz

5
5

10

15

20

25

20

80

15

60

10

40

PAE
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz

0.2

20

0
30

0
30

10

15

20

25

Input Power Pin (dBm)

Power Gain, Power Added Efficiency


vs. Frequency

Input Return Loss vs. Frequency


80

19

70
PAE

18

60

PG

17

VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm

16
450

455

460

465

470

475

50

40
480

Input Return Loss RL (dB)

20

Power Added Efficiency PAE (%)

Input Power Pin (dBm)

-5
-10
-15
-20
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm

-25
-30
450

455

460

465

470

475

480

Frequency f (MHz)

Frequency f (MHz)

Power Gain, Power Added Efficiency,


vs. Drain to Source Voltage

Power Gain, Power Added Efficiency


vs. Idling Current

PG
65

20

60

19
PAE
18

55

17

50

16
15

IDQ = 300 mA
45
f = 465 MHz
Pin = +17 dBm
40
6
7
8

Drain to Source Voltage VDS (V)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

70

21

Power Gain PG (dB)

70

21

20

65

PAE

60

19
PG

18

55

17

50

16
15
0

0.1

0.2

VDS = 4.8 V
45
f = 465 MHz
Pin = +17 dBm
40
0.3
0.4
0.5

Power Added Efficiency PAE (%)

1.2

Power Gain PG (dB)

30

PG

Drain Current ID (A)

Pout

Power Gain PG (dB)

100

1.4

35

Power Gain PG (dB)

25

Power Added Efficiency PAE (%)

Output Power Pout (dBm)

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Input Power

Idling Current IDQ (A)

Page 14 of 21

RQA0009TXDQS

Preliminary

Evaluation Circuit (f = 520 MHz)


C6

C5

C13

C12

VG

VD
R2
C4

C11
R1

L1
L2

50 C1
IN

C10 50

L3

OUT
C2

C1, C4, C10, C11


C2
C3
C5, C12
C6, C13
C7
C8
C9
L1
L2
L3
R1
R2

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

C3

C7

C8

C9

100 pF Chip Capacitor


22 pF Chip Capacitor
5 pF Chip Capacitor
1000 pF Chip Capacitor
1 F Chip Tantalum Capacitor
18 pF Chip Capacitor
10 pF Chip Capacitor
7 pF Chip Capacitor
8 Turns D: 0.5 mm, 2.4 mm Enamel Wire
1 nH Chip Inductor
1.8 nH Chip Inductor
670 Chip Resistor
6.8 k Chip Resistor

Page 15 of 21

RQA0009TXDQS

Preliminary

Output Power, Drain Current


vs. Input Power
1.6

1.0
ID

20

0.8

15

0.6

10

0.4

VDS = 6 V
f = 520 MHz
IDQ = 180 mA

5
0
5

10

15

20

25

60

15
PAE

40

10
VDS = 6 V
f = 520 MHz
IDQ = 180 mA

20

0
30

0
30

10

15

20

25

Input Power Pin (dBm)

Input Power Pin (dBm)

Power Gain, Power Added Efficiency


vs. Frequency

Input Return Loss vs. Frequency

PAE
60

15
PG
10

40

20
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
0
510
530
550

0
450

470

490

Input Return Loss RL (dB)

80

Power Added Efficiency PAE (%)

-5

-10

-15

VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm

-20
450

470

490

510

530

550

Frequency f (MHz)

Frequency f (MHz)

Power Gain, Power Added Efficiency,


vs. Drain to Source Voltage

Power Gain, Power Added Efficiency


vs. Idling Current

70

20
PAE

60

15

PG
50

10

0
3

IDQ = 180 mA
f = 520 MHz
Pin = +25 dBm
4

Drain to Source Voltage VDS (V)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

40

30

20

Power Gain PG (dB)

Power Gain PG (dB)

80

PG

0.2

20

Power Gain PG (dB)

20

80

15

75
PG

10

0
0

70

PAE

VDS = 6 V
f = 520 MHz
Pin = +25 dBm
0.1

0.2

0.3

0.4

65

60
0.5

Power Added Efficiency PAE (%)

25

Power Gain PG (dB)

1.2

30

100

1.4

Pout

Drain Current ID (A)

35

25

Power Added Efficiency PAE (%)

Output Power

Pout (dBm)

40

Power Added Efficiency PAE (%)

Power Gain, Power Added Efficiency


vs. Input Power

Idling Current IDQ (A)

Page 16 of 21

RQA0009TXDQS

Preliminary
S21 Parameter vs. Frequency

S11 Parameter vs. Frequency


.8

.6

Scale: 5 / div.

90

1.5

60

120

2
.4
3

30

150

4
5

.2

10
.2

.4

.6 .8 1

1.5 2

3 45

10

180

-10
-5
-4

-.2

-.4

-30

-150

-3
-2
-.6

-.8

-1

-60

-120

-1.5

-90

Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

90

Scale: 0.01 / div.

.8

60

120

.6

1.5
2

.4
3
30

150

4
5

.2

10
180

.2

.4

.6 .8 1

1.5 2

3 45

10
-10
-5
-4

-.2
-30

-150

-3
-.4
-60

-120
-90

Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

-2
-.6

-.8

-1

-1.5

Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

Page 17 of 21

RQA0009TXDQS

Preliminary
S21 Parameter vs. Frequency

S11 Parameter vs. Frequency


.8

.6

Scale: 5 / div.

90

1.5

60

120

2
.4
3

30

150

4
5

.2

10
.2

.4

.6 .8 1

1.5 2

3 45

10

180

-10
-5
-4

-.2

-.4

-30

-150

-3
-2
-.6

-.8

-1

-60

-120

-1.5

-90

Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

90

Scale: 0.01 / div.

.8

60

120

.6

1.5
2

.4
3
30

150

4
5

.2

10
180

.2

.4

.6 .8 1

1.5 2

3 45

10
-10
-5
-4

-.2
-30

-150

-3
-.4
-60

-120
-90

Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

-2
-.6

-.8

-1

-1.5

Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)

Page 18 of 21

RQA0009TXDQS

Preliminary

S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500

S11
MAG
ANG (deg.)

S21
MAG
ANG (deg.)

S12
MAG
ANG (deg.)

S22
MAG
ANG (deg.)

0.868
0.861
0.882
0.892
0.899
0.910
0.918
0.926
0.932
0.936
0.940
0.941
0.944
0.945
0.944
0.944
0.943
0.943
0.946
0.949
0.951
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.953
0.958
0.965
0.963
0.956
0.950
0.944
0.936
0.932
0.932
0.929
0.923
0.917

9.85
5.42
3.64
2.64
2.06
1.61
1.28
1.04
0.84
0.73
0.62
0.54
0.45
0.41
0.37
0.31
0.30
0.26
0.23
0.22
0.21
0.18
0.18
0.16
0.14
0.14
0.13
0.12
0.11
0.11
0.10
0.10
0.09
0.08
0.08
0.08
0.07
0.07
0.07
0.07
0.06
0.06
0.06
0.06
0.05
0.05
0.05
0.05
0.05

0.019
0.018
0.016
0.016
0.014
0.013
0.013
0.011
0.010
0.009
0.008
0.007
0.006
0.006
0.005
0.004
0.004
0.003
0.003
0.003
0.004
0.004
0.004
0.005
0.005
0.006
0.006
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.017

0.706
0.725
0.755
0.768
0.792
0.805
0.827
0.840
0.855
0.869
0.880
0.892
0.901
0.906
0.915
0.919
0.929
0.930
0.936
0.940
0.943
0.944
0.950
0.951
0.949
0.956
0.958
0.957
0.956
0.959
0.960
0.960
0.962
0.967
0.968
0.965
0.967
0.976
0.972
0.972
0.976
0.981
0.977
0.977
0.978
0.981
0.977
0.977
0.980

-154.0
-159.4
-163.9
-166.8
-169.5
-171.6
-173.4
-175.2
-176.8
-178.2
-179.5
179.2
178.1
176.9
175.9
174.6
173.4
172.3
171.1
170.2
169.4
168.7
167.8
167.0
166.2
165.4
164.6
164.0
163.3
162.1
160.8
159.7
158.5
157.3
156.4
155.7
154.7
153.9
153.6
153.3
152.9
152.2
151.6
150.7
149.3
148.1
147.3
146.3
144.9

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

88.8
77.2
68.2
58.5
51.8
45.1
40.3
36.0
31.8
28.8
26.4
23.1
20.2
18.3
16.4
13.9
12.1
10.6
8.6
7.3
6.5
5.3
4.3
3.7
2.2
1.3
0.8
0.1
-0.8
-1.8
-2.7
-3.6
-4.5
-4.7
-5.0
-4.7
-4.9
-5.2
-4.6
-4.9
-4.2
-3.5
-3.8
-3.5
-3.4
-3.6
-3.0
-3.6
-3.0

1.2
-6.3
-14.1
-19.2
-22.1
-27.2
-29.3
-34.1
-33.1
-34.5
-34.6
-36.5
-32.7
-32.0
-25.3
-22.3
-15.2
0.3
9.1
20.6
36.9
40.3
52.0
53.2
56.8
60.9
64.0
62.2
65.4
65.9
65.6
65.9
66.6
66.2
66.5
66.5
67.0
67.0
65.5
65.4
65.3
65.2
63.9
63.9
63.0
62.8
63.0
61.3
61.8

-166.8
-168.9
-170.6
-170.6
-171.2
-171.5
-172.2
-173.1
-173.8
-174.6
-175.6
-176.5
-177.3
-178.0
-179.4
180.0
178.9
178.1
177.2
176.5
175.5
174.7
174.1
173.3
172.6
171.7
171.0
170.3
169.5
168.5
168.2
167.4
166.4
165.8
165.3
164.5
163.7
163.2
162.9
161.9
161.0
160.7
160.1
159.5
158.9
158.4
158.0
157.2
156.8

Page 19 of 21

RQA0009TXDQS

Preliminary

S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500

S11
MAG
ANG (deg.)

S21
MAG
ANG (deg.)

S12
MAG
ANG (deg.)

S22
MAG
ANG (deg.)

0.772
0.794
0.812
0.818
0.824
0.831
0.836
0.841
0.848
0.851
0.851
0.852
0.854
0.858
0.865
0.873
0.878
0.880
0.882
0.886
0.889
0.893
0.898
0.902
0.901
0.902
0.904
0.907
0.904
0.905
0.912
0.915
0.919
0.926
0.938
0.942
0.942
0.945
0.946
0.942
0.939
0.940
0.942
0.939
0.937
0.937
0.935
0.932
0.931

9.63
5.54
3.91
2.98
2.36
1.92
1.60
1.36
1.15
1.00
0.87
0.77
0.69
0.60
0.54
0.49
0.45
0.41
0.37
0.35
0.32
0.29
0.27
0.26
0.23
0.22
0.21
0.19
0.18
0.17
0.16
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.11
0.11
0.10
0.10
0.09
0.09
0.08
0.08
0.08
0.07
0.07

0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.009
0.008
0.008
0.007
0.006
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.005
0.005
0.005
0.006
0.006
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.012
0.012
0.012
0.013
0.013
0.014
0.014
0.014
0.014

0.776
0.784
0.799
0.805
0.818
0.824
0.837
0.843
0.859
0.868
0.874
0.887
0.896
0.901
0.905
0.911
0.918
0.922
0.932
0.931
0.935
0.939
0.944
0.943
0.948
0.948
0.954
0.954
0.953
0.958
0.959
0.956
0.958
0.964
0.965
0.963
0.965
0.968
0.965
0.969
0.973
0.974
0.974
0.974
0.976
0.977
0.972
0.975
0.977

-157.0
-162.8
-167.3
-170.4
-173.1
-175.0
-176.6
-178.3
-179.9
179.0
177.7
176.3
174.7
173.3
171.9
170.8
169.8
168.8
167.7
166.5
165.5
164.4
163.3
162.4
161.3
160.0
158.7
157.7
156.5
155.1
153.8
152.8
151.5
149.9
148.8
147.9
146.7
145.5
144.7
143.7
142.3
140.9
139.8
138.3
136.8
135.4
134.1
132.8
131.3

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

88.9
79.0
71.6
64.7
59.1
53.6
48.7
44.8
40.5
37.1
33.9
30.7
27.9
24.8
22.3
20.2
17.9
16.1
14.2
12.4
10.7
8.9
7.5
6.2
4.7
3.3
1.8
0.4
-0.8
-2.4
-3.1
-4.2
-5.8
-6.8
-7.8
-8.6
-9.3
-10.2
-10.6
-11.2
-11.8
-12.5
-13.3
-14.3
-15.3
-16.3
-17.5
-18.1
-18.7

-1.0
-6.3
-11.1
-13.5
-15.2
-20.4
-21.4
-23.3
-22.9
-22.2
-24.8
-24.2
-20.5
-18.2
-15.1
-12.2
-1.7
4.3
11.2
21.6
29.8
33.2
40.9
46.7
50.8
54.5
57.8
55.3
60.5
62.1
61.1
64.3
63.2
62.7
63.0
62.6
61.9
63.8
62.4
62.2
61.2
62.0
61.3
59.2
59.6
59.8
58.9
57.9
57.7

-172.1
-173.8
-174.8
-174.8
-175.0
-175.1
-175.4
-175.8
-176.8
-177.1
-177.4
-177.8
-178.8
-179.1
-179.8
179.5
178.9
178.3
177.8
177.1
176.5
175.8
175.1
174.6
174.1
173.4
173.1
172.5
171.6
171.0
170.7
170.4
169.3
168.9
168.4
167.8
167.0
166.6
166.3
165.5
164.9
164.6
164.2
163.4
163.0
162.9
162.0
161.5
161.2

Page 20 of 21

RQA0009TXDQS

Preliminary

Package Dimensions

1.5 1.5
3.0

MASS[Typ.]
0.050g

1.5 0.1
0.44 Max

2.5 0.1
4.25 Max

0.53 Max
0.48 Max

0.8 Min

0.4

4.5 0.1
1.8 Max

Previous Code
UPAK / UPAKV

Unit: mm

(1.5)

0.44 Max

(0.2)

RENESAS Code
PLZZ0004CA-A

(2.5)

JEITA Package Code


SC-62

(0.4)

Package Name
UPAK

Ordering Information
Orderable Part Number
RQA0009TXTL-E

R07DS0492EJ0200 Rev.2.00
Jun 29, 2011

Quantity
1000 pcs.

Shipping Container
178 mm reel, 12 mm emboss taping

Page 21 of 21

Notice
1.

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.

2.

Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.

3.

You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.

4.

Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.

5.

When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.

6.

Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics

7.

Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product

assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":

Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.

"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":

Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.

8.

You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.

9.

Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.

10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)

"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2)

"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

http://www.renesas.com

SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Dsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141

2011 Renesas Electronics Corporation. All rights reserved.


Colophon 1.1