AO4828

60V Dual N-Channel MOSFET

General Description

Features

The AO4828 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.

VDS (V) = 60V

ID = 4.5A (VGS = 10V)
RDS(ON) < 56m (VGS = 10V)
RDS(ON) < 77m (VGS = 4.5V)
100% UIS tested
100% Rg tested

SOIC-8
Top View

D
1

Bottom View

D
2

Top View
S2
G2
S1
G1

D2
D2
D1
D1

G1

G2
S1

S2

Pin1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
AF
Current

VGS
TA=25C
TA=70C
TA=25C

Avalanche Current B
B

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

20

ID

3.6

IDM

20
W

1.28

IAR, IAS

19

EAR, EAS

18

mJ

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd.

PD

TA=70C

Repetitive avalanche energy 0.1mH

Units
V

4.5

Pulsed Drain Current B

Power Dissipation

Maximum
60

RJA
RJL

Typ
48
74
35

Max
62.5
110
60

Units
C/W
C/W
C/W

www.aosmd.com

AO4828

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=250A, VGS=0V

Units
V

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

20

TJ=55C

VGS=10V, ID=4.5A
Static Drain-Source On-Resistance

Max

60

VDS=60V, VGS=0V

IDSS

RDS(ON)

Typ

TJ=125C
VGS=4.5V, ID=3A

100

nA

2.1

46

56

80

100

64

77

A
m

gFS

Forward Transconductance

VDS=5V, ID=4.5A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

ISM

Pulsed Body Diode Current B

20

11
0.74

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

450
VGS=0V, VDS=30V, f=1MHz

Qgs

Gate Source Charge

540

60

VGS=10V, VDS=30V, ID=4.5A

1.3

pF
pF

25
VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge

pF

1.65

8.5

10.5

nC

4.3

5.5

nC

1.6

nC

Qgd

Gate Drain Charge

2.2

nC

tD(on)

Turn-On DelayTime

4.7

ns

tr

Turn-On Rise Time

2.3

ns

VGS=10V, VDS=30V, RL=6.7,

RGEN=3

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

Qrr

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/s

Body Diode Reverse Recovery Time

IF=4.5A, dI/dt=100A/s

15.7

ns

1.9

ns

27.5

35

32

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev8: May 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20

15
10.0
V

5.0V

VDS=5V

15

125C

ID(A)

ID (A)

10
4.5V
10
4.0V

5
25C
VGS=3.5V
0
0

2.5

VDS (Volts)
Fig 1: On-Region Characteristics

4.5

2
Normalized On-Resistance

90
80
RDS(ON) (m )

3.5

VGS(Volts)
Figure 2: Transfer Characteristics

100

VGS=4.5V

70
60
50

VGS=10V

40
30
20

VGS=10V
1.8
ID=4.5A
1.6
VGS=4.5V
ID=3.0A

1.4
1.2
1
0.8

10

15

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

160

1.0E+01
ID=4.5A

140

1.0E+00
125C

1.0E-01

120
IS (A)

RDS(ON) (m )

125C

100

1.0E-02
25C

1.0E-03

80
25C
60

1.0E-04

40

1.0E-05
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

www.aosmd.com

AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

800

10
VDS=30V
ID= 4.5A
Capacitance (pF)

VGS (Volts)

8
6
4
2

600
Ciss
400
Coss

200

Crss

0
0

10

10

Qg (nC)
Figure 7: Gate-Charge Characteristics

50

60

1ms

1s
1.0

10s

TJ(Max)=150C
TA=25C

30
Power (W)

ID (Amps)

10.0
10ms

TJ(Max)=150C
TA=25C

10s

100s

0.1s

20

10

DC
0
0.001

0.1
1

10

0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

100

VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

Z JA Normalized Transient
Thermal Resistance

40

40

RDS(ON)
limited

10

30

VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

0.1

20

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W

0.01

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com