GT40Q321

TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT

GT40Q321
Voltage Resonance Inverter Switching Application

The 5th generation

Enhancement-mode

High speed : tf = 0.41 s (typ.) (IC = 40A)

Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)

FRD included between emitter and collector

Unit: mm

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

VCES

1200

Gate-emitter voltage

VGES

25

@ Tc = 100C

Continuous collector
current

@ Tc = 25C

Pulsed collector current

Diode forward current

IC

23
42

ICP

80

DC

IF

10

Pulsed

IFP

80

@ Tc = 100C

A
A
A

68

170

Tj

150

Tstg

55 to 150

Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Rth (j-c)

0.74

C/W

Thermal resistance (diode)

Rth (j-c)

1.79

C/W

Collector power
dissipation

@ Tc = 25C

Junction temperature
Storage temperature range

PC

JEDEC

JEITA

TOSHIBA

2-16C1C

Weight: 4.6 g (typ.)

Thermal Characteristics

Equivalent Circuit
Collector

Gate
Emitter

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GT40Q321
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = 25 V, VCE = 0

500

nA

Collector cut-off current

ICES

VCE = 1200 V, VGE = 0

5.0

mA

VGE (OFF)

IC = 40 mA, VCE = 5 V

4.0

7.0

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

VCE (sat)

Input capacitance

Cies
tr

Rise time
Switching time

Turn-on time

ton

Fall time

tf

Turn-off time

IC = 40 A, VGE = 15 V

2.8

3.6

VCE = 10 V, VGE = 0, f = 1 MHz

3200

pF

Resistive Load

0.19

VCC = 600 V, IC = 40 A

0.25

VGG = 15 V, RG = 39 W

0.41

0.72

0.57

(Note 1)

toff

Diode forward voltage

VF

IF = 10 A, VGE = 0

2.0

Reverse recovery time

trr

IF = 10 A, di/dt = 20 A/s

0.6

Note 1: Switching time measurement circuit and input/output waveforms

VGE

90%
10%

0
RG

RL
IC

90%

VCC
0

90%
10%

VCE

10%

td (off)
tf
toff

tr
ton

General Safety Precautions and Usage Considerations

The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH)
equipment. For other applications, please contact your nearest Toshiba sales office.

Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break
down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. It is
therefore necessary to incorporate device derating into circuit design.

In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature
becomes low. It is therefore necessary to incorporate device derating into circuit design.

Maximum collector current is calculated from Tj MAX.(150C), the thermal resistance and DC forward power
dissipation. However its limited in real application by another factors such as switching loss, limitation of the
inner bonding wires and so on.

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GT40Q321

IC VCE

VCE VGE
10
15

Common emitter

12

60

(V)

20

VCE

Common emitter
Tc = 25C

10

Collector-emitter voltage

Collector current

IC

(A)

80

40

VGE = 8 V

20

0
0

Collector-emitter voltage

VCE

Tc = -40C
8

6
80
4

0
0

(V)

40
IC = 10 A

20

10

15

Gate-emitter voltage VGE

VCE VGE
(V)

(V)

VCE

Collector-emitter voltage

VCE
Collector-emitter voltage

Common emitter

Tc = 25C

6
80
4

40
20

IC = 10 A

10

15

Gate-emitter voltage VGE

20

Tc = 125C
8

40

4
20
2

0
0

25

80

(V)

IC = 10 A

10

Collector-emitter saturation voltage

VCE (sat) (V)

(A)
IC
Collector current

40

20
25
Tc = 125C
4

20

25

(V)

VCE (sat) Tc
6

Common emitter
VCE = 5 V

60

0
0

15

Gate-emitter voltage VGE

IC VGE
80

(V)

10
Common emitter

0
0

25

VCE VGE

10

20

Common emitter
VGE = 15 V

80

4
40
3
20
2
IC = 10 A
1

-40
8

Gate-emitter voltage VGE

12

0
-60

16

(V)

-20

20

60

Case temperature Tc

100

140

(C)

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VCE, VGE QG

C VCE

(V)

Common emitter
RL = 7.5 W
Tc = 25C

VCE = 300 V

100 V

10

200 V

100

0
0

50

100

Gate charge

5000
3000

Cies

1000
500
300

Coes

100

Common emitter
50 V
GE = 0
30 f = 1 MHz
Tc = 25C
10
0.1
1
0.3

0
200

150

QG

10000

(pF)

15

Capacitance C

300

200

50000
30000

20

Gate-emitter voltage VGE

Collector-emitter volgate VCE

(V)

400

(nC)

Switching time

Common emitter
VCC = 600 V
RG = 39 W
VGG = 15 V
Tc = 25C

0.5

toff

0.3

tf

0.1

ton
tr

0.05

0.01
0

10

20

30

Collector current

IC

40

tf

0.3

ton
tr

0.1
0.05

(A)

10

IC max
(continuous)

(A)

10 ms*

10

500
300
100
50
30
10
5
3

DC
operation

1000

Tj 125C
VGG = 20 V
RG = 10 W

1000

10 ms*

10
5
3

100 ms*

300

Reverse bias SOA

100 IC max (pulsed)*

1 ms*

100

5000
3000

IC

500
300

30

Gate resistance RG (W)

Collector current

(A)
IC

(V)

toff

0.5

0.01
1

50

*Single non-repetitive pulse

Tc = 25C
Curves must be derated
linearly with increases in
temperature.

1000

Collector current

1000

Common emitter
3 VCC = 600 V
IC = 40 A
VGG = 15 V
Tc = 25C
1

Safe operating area

5000
3000

1
1

VCE

300

0.03

0.03

50
30

100

30

Switching time RG

(ms)

(ms)

10

Switching time

Collector-emitter voltage

Switching time IC
10

Cres

30

100

300

Collector-emitter voltage

1000

VCE

1
1

3000 10000

(V)

10

30

100

300

Collector-emitter voltage

1000 3000 10000

VCE

(V)

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rth (t) tw
Common emitter

Tc = 25C

102

VGE = 15 V

Transient thermal impedance

rth (t) (C/W)

40

30

20

101
Diode stage
10

IGBT stage
10-1

10-2

10
10-3
10-5
0
25

50

75

100

Case temperature Tc

125

10-4

10-3

150

tw

101

(s)

trr, Irr IF
0.8

-40

25

(ms)

Tc = 125C

(A)

Common collector
VGE = 0

0.6

trr

60

40

20

10
0

Forward voltage

102

(C)

Reverse recovery time

(A)
Forward current IF

100

10-1

Pulse width

IF VF
80

10-2

VF

0.4

(V)

Irr

0.2

2
Common collector
di/dt = -20 A/ms

0
0

6
trr

Tc = 25C
10

20

Forward current

30

IF

40

Reverse recovery current Irr

Maximum DC collector current

ICmax

(A)

ICmax Tc
50

0
50

(A)

trr, Irr di/dt

16

(A)

0.8

20

Common collector
IF = 10 A
Tc = 25C

0.6

12

trr

0.4

0.2

0.0
0

Irr

50

100

di/dt

150

200

Reverse recovery current

Reverse recovery time

trr

Irr

(ms)

1.0

0
250

(A/ms)

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RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2003-02-05