CONTENTS

Topic

Page no.

Aim of the experiment

Introduction

Theory

Apparatus Required

Procedure

Observation table and

Conclusions

7 Calculations

Precautions

Bibliography

PRECA UTIONS

10

1) The source of light must be adjusted so that light falls

normally on LDR.
2) Suitable range of current in milli-ammeter is to be
selected.
3) Source of light must radiate light continuously.
4) LDR should be connected carefully to the voltage
source.
The distance between source and LDR should be measured accurately
.BIBLIOGRAPHY

This project is made with the help of following sources:-

1. Websites:
* www.wikipedia.com

* www.google.com

* www.icbse.com
2. Books:
* Comprehensive practical physics for class XII
Pradeep's new course physic
sAIM OF THE EXPERIMENT

To study the variations, in current flowing, in a circuit

containing a LDR. because of a variation.
a) In the power of the incandescent lamp, used to
'illuminate' the LDR (keeping all the lamps at a fixed
distance).
b) In the distance of an incandescent lamp, (of fixed
power), used to illuminate' the LDR.

INTRODUCTION
7

A photoresistor or light-dependent
resistor (LDR) or photocell is a light-controlled
variable resistor. The resistance of a photoresistor decreases
with increasing incident light intensity; in other words, it
exhibits photoconductivity. A photoresistor can be applied
in light-sensitive detector circuits, and light- and darkactivated switching circuits.
A photoresistor is made of a high
resistance semiconductor. In the dark, a photoresistor can
have a resistance as high as a few megaohms (Mil), while
in the light, a photoresistor can have a resistance as low as
a few hundred ohms. If incident light on a photoresistor
exceeds a certain frequency, photons absorbed by the
semiconductor give bound electrons'enough energy to jump
into the conduction band. The resulting free electrons (and
their hole partners) conduct electricity, thereby lowering
resistance. The resistance range and sensitivitv of a
photoresistor can substantially differ among dissimilar
devices. Moreover, unique photoresistors may react
substantially differently to photons within certain
wavelength bands.

A photoelectric device can be either intrinsic or extrinsic.

An intrinsic semiconductor has its own charge carriers and
is not an efficient semiconductor, for example, silicon. In
intrinsic devices the only available electrons are in the
valence band, and hence the photon must have enough
energy to excite the electron across the entire band gap.
Extrinsic devices have impurities, also called dopants,
added whose ground state energy is closer to the
conduction band; since the electrons do not ha\e as far to
jump, lower energy photons (that is. longer wavelengths
and lower frequencies) are sufficient to trigger the device.
If a sample of silicon has some of its atoms replaced by
phosphorus atoms (impurities), there will be extra electrons
available for conduction. This is an example of an extrinsic
semiconductor
P hot ore si st or s are less light-sensitive devices
than photodiodes or phototransistors: the two latter
components are true semiconductor devices, while a
photoresistor is passive component and does not have a
PN-junction. The photoresistivity of any photoresistor
may vary widely depending on ambient temperature,
making them unsuitable for applications requiring precise
measurement of or sensitivity to light.

Photoresistors also exhibit a certain degree of latency between the moment they
are hit by light and the subsequent moment that their resistance actually drops.
This drop is usually about 10 milliseconds. Also, they exhibit a much longer
latency when going from lighted to dark environments, often of as long as one
second. This property makes them unsuitable for sensing rapidly flashing light
s

THEORY

Light dependent resistor is a resistor whose resistance

changes with the intensity of light incident on it.
It is made up of cadmium sulphide. The resistance of LDR is 10 MQ (in full dark)
and to about 10"4 MH (in day light). The resistance of LDR decreases with
increase in the intensity of light

APPARA TVS REQUIRED

1) A light dependent resistor (LDR).

2) A battery of Y
3) A source of light (as lamps, 25 W, 40 W, 60 W, 100 W
and 200 W)
4) A mi Hi-ammeter

PROCEDURE
1) The apparatus according to the electric circuit diagram
was arranged.
2) The knob of the milli-ammeter was set on the point
marked current.
3) A thick piece of black paper was placed on the LDR, so
that no light falls on it. The current in the milli-ammeter
was noted down.
4) The black paper was removed from the LDR. The
current in the milli-ammeter was recorded in the
presence of normal light in the laboratory and the
resistance of LDR was determined by using R = V/I.
5) The resistance of the LDR was measured by placing a
lamp of 25 W over it.
6) The resistances for all lamps say 40 W, 60 W, 100 W
and 200 W were measured by replacing 25 W lamp,
one by one.

7) Any one lamp was selected (say 60 W) and moved

towards the LDR for a distance of 10 cm and the
electric current in milli-ammeter was noted down.
8) The same lamp was moved towards the LDR to a
distance of 8 cm and again the current was noted
down.
Similarly, the current in milli-ammeter for the distance 6 cm, 4 cm and 2 cm was
noted down

AND
CALCULATIONS

.OBSER VA TION TA RLE

1) The emf of battery = 9 volts.

2) Range of milli-ammeter = 0-500 mA.
3) Least count of milli-ammeter = 10 mA.
4) Zero error of milli-ammeter = nil.
Mode of
Table 1 for different power lamps.
5) The distance of all lamps from LDR = 2 cms.

Electric current

Resistance

(I) (mA)

R = V/I ft

Sl.no
incident

lieht
Lamp of 25 W
Lamp of 40 W
Lamp of 60 W

10
20
30

0.9
0.45
0.3

4
5

Lamp of 100 W
Lamp of 200 W

40
50

0.225
0.18

1
?

Currentof
Table 2 for a lamp placed at differentDistance
distances. 6) Power
lamp = 200 W.

Resistance

Sl.no
between source

I (mA)

R = v/i n

1
2
j

4
5

and LDR (cm)

10
8
6
4
2"

10
20
30

0.9
0.45
0.3

40
50

0.225
0.18

CONCLUSIONS
1) From table 1, it is concluded that electric current flowing
through a circuit containing LDR increases with the

increase in the power (intensity) of the lamps. Hence

resistance of LDR decreases.
2) From table 2, it is concluded that the electric current
flowing through a circuit containing LDR increases with
decrease in the distance between source of fixed power
and LDR. Hence, with the distance between light source
and LDR increases the resistance of the LDR decreases
and vice versa.