K12A50D-Toshiba Semiconductor PDF

TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK12A50D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.)

High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 A (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
Gate-source voltage
VGSS
30
(Note 1)
ID
12
Pulse (t = 1 ms)
(Note 1)
IDP
48
Drain power dissipation (Tc = 25C)
PD
45
Single pulse avalanche energy

(Note 2)
EAS
364
mJ
Avalanche current
IAR
12
Repetitive avalanche energy (Note 3)
EAR
4.5
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to 150
DC
Drain current
1: Gate
2: Drain
3: Source
http://www.DataSheet4U.net/
mJ
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 4.3 mH, RG = 25 , IAR = 12 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2008-09-10
datasheet pdf - http://www.DataSheet4U.net/
TK12A50D
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 30 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 500 V, VGS = 0 V
10
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Gate threshold voltage

Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.45
0.52
Forward transfer admittance
Yfs
VDS = 10 V, ID = 6 A
1.5
6.0
Input capacitance
Ciss
1350
Reverse transfer capacitance
Crss
Output capacitance
Coss
135
22
55
15
100
25
16
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
ns
tf
Turn-off time
VOUT
RL = 33
50
Switching time
Fall time
ID = 6 A
10 V
VGS
0V
tr
VDD 200 V
Duty 1%, tw = 10 s
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
pF
VDD 400 V, VGS = 10 V, ID = 12 A
nC
Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
12
(Note 1)
IDRP
48
Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
1.7
Reverse recovery time
trr
IDR = 12 A, VGS = 0 V,
1300
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/s
12
Marking
K12A50D
Part No. (or abbreviation code)

Lot No.
A line indicates
Lead(Pb)-Fee Finish.
2008-09-10
TK12A50D
ID VDS
ID VDS
10
20
8, 7
COMMON SOURCE
(A)
6.5
PULSE TEST
6.25
10
6
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
4
5.5
2
COMMON SOURCE
Tc = 25C
PULSE TEST
7.5
10, 8
Tc = 25C
7
16
6.75
6.5
12
5.5
VGS = 5 V
VGS = 4.5V
0
0
DRAIN-SOURCE VOLTAGE
VDS
10
10
20
ID VGS
VDS
(V)
VDS VGS
COMMON SOURCE
VDS = 20 V
20 PULSE TEST
VDS (V)
16
(A)
DRAIN CURRENT ID
50
40
(V)
24
12
10
COMMON SOURCE
Tc = 25
PULSE TEST
ID = 12 A
100
Tc = 55C
0
0
25
10
GATE-SOURCE VOLTAGE
VGS
6
2
0
0
(V)
10
DRAIN-SOURCE ON-RESISTANCE
RDS (ON) ()
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = 55C
25
100
1
0.1
0.1
20
16
VGS
(V)
RDS (ON) ID
100
10
12
GATE-SOURCE VOLTAGE
Yfs ID
FORWARD TRANSFER ADMITTANCE
Yfs (S)
30
10
DRAIN CURRENT ID
1
VGS = 10 V15 V
0.1
0.1
100
(A)
COMMON SOURCE
Tc = 25C
PULSE TEST
10
DRAIN CURRENT ID
100
(A)
2008-09-10
TK12A50D
RDS (ON) Tc
IDR VDS
100
COMMON SOURCE
PULSE TEST
DRAIN REVERSE CURRENT

IDR (A)
2.0
1.5
ID = 12 A
6
1.0
VGS = 10 V
0.5
COMMON SOURCE
Tc = 25C
PULSE TEST
10
1
10
5
3
1
0
80
40
0.1
0
40
80
CASE TEMPERATURE
120
Tc
160
(C)
0.2
0.4
0.6
CAPACITANCE VDS
GATE THRESHOLD VOLTAGE

Vth (V)
VDS
1.4
(V)
Coss
100
Crss
COMMON SOURCE
VGS = 0 V
Tc = 25C
1
10
0
80
100
VDS
(V)
40
VDS (V)
60
40
20
120
CASE TEMPERATURE
80
120
Tc
160
(C)
DYNAMIC INPUT / OUTPUT

CHARACTERISTICS
80
80
40
CASE TEMPERATURE
PD Tc
40
160
Tc
200
(C)
500
400
20
VDS
16
300
VGS
100
10
400
8
COMMON SOURCE
ID = 12 A
200
Tc = 25C
4
PULSE TEST
200
0
0
12
VDD = 100 V
20
TOTAL GATE CHARGE
0
40
30
Qg
(V)
1
0.1
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
VGS
(pF)
1000
C
CAPACITANCE
1.2
Vth Tc
f = 1 MHz
DRAIN POWER DISSIPATION

PD (W)
1.0
5
Ciss
0
0
0.8
10000
10
VGS = 0, 1 V
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-RESISTANCE
RDS (ON) ()
2.5
(nC)
2008-09-10
TK12A50D
NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
rth tw
10
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01 0.01
T
Duty = t/T
Rth (ch-c) = 2.78C/W
0.001
10
100
1m
10m
100m
PULSE WIDTH
tw (s)
EAS Tch
SAFE OPERATING AR
500
ID max (PULSED) *
100 s *
ID max (CONTINUOUS) *
10
AVALANCHE ENERGY
EAS (mJ)
100
1 ms *
(A)
DRAIN CURRENT ID
DC OPERATION
Tc = 25C
Tc=25C
LINEARLY WITH INCREASE IN
TEMPERATURE.
10
200
100
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)

Tch (C)
CURVES MUST BE DERATED
300
0
25
* SINGLE NONREPETITIVE PULSE
0.001
400
0.1
0.01
10
VDSS max
15 V
1000
100
VDS
BVDSS
IAR
15 V
(V)
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 4.3 mH
VDS
WAVEFORM
AS =
1
B VDSS
L I2
B
V
VDSS
DD
2008-09-10
TK12A50D
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2008-09-10

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TK12A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.)

Absolute Maximum Ratings (Ta = 25C)

Drain power dissipation (Tc = 25C)

Single pulse avalanche energy

Repetitive avalanche energy (Note 3)

Storage temperature range

Weight: 1.7 g (typ.)

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 2: VDD = 90 V, Tch = 25C(initial), L = 4.3 mH, RG = 25 , IAR = 12 A

Gate leakage current

Drain cut-off current

VDS = 500 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

Forward transfer admittance

Reverse transfer capacitance

VDS = 25 V, VGS = 0 V, f = 1 MHz

Total gate charge

VDD 400 V, VGS = 10 V, ID = 12 A

Source-Drain Ratings and Characteristics (Ta = 25C)

Continuous drain reverse current

Reverse recovery time

Reverse recovery charge

dIDR/dt = 100 A/s

Part No. (or abbreviation code)

DRAIN REVERSE CURRENT

GATE THRESHOLD VOLTAGE

DYNAMIC INPUT / OUTPUT

TOTAL GATE CHARGE

DRAIN POWER DISSIPATION

NORMALIZED TRANSIENT THERMAL

CHANNEL TEMPERATURE (INITIAL)

CURVES MUST BE DERATED

* SINGLE NONREPETITIVE PULSE

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

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