IGNS

DES
W
E
T
OR N
DUC
ED F TE PRO
D
N
MME BSTITU
ECOSheet
SU
R
Data
January 2002
T
40N
NO
IBLE
S
IRF5
S
PO

IRF540, RF1S540SM

28A, 100V, 0.077 Ohm, N-Channel Power

MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17421.

Features
28A, 100V
rDS(ON) = 0.077
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol

Ordering Information
D

PART NUMBER

PACKAGE

BRAND

IRF540

TO-220AB

IRF540

RF1S540SM

TO-263AB

RF1S540SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.

Packaging
JEDEC TO-220AB

JEDEC TO-263AB
SOURCE
DRAIN
GATE

DRAIN (FLANGE)

2002 Fairchild Semiconductor Corporation

GATE

DRAIN
(FLANGE)

SOURCE

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
TC = 25oC, Unless Otherwise Specified

Absolute Maximum Ratings

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg

IRF540, RF1S540SM
100
100
28
20
110
20
120
0.8
230
-55 to 175

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to TJ = 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current

SYMBOL
BVDSS
VGS(TH)
IDSS

On-State Drain Current (Note 2)

ID(ON)

Gate to Source Leakage Current

IGSS

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge

rDS(ON)
gfs
td(ON)
tr
td(OFF)

MIN

TYP

MAX

UNITS

100

VGS = VDS, ID = 250A

VDS = 95V, VGS = 0V

25

VDS = 0.8 x Rated BV DSS, VGS = 0V, TJ = 150oC

250

28

100

nA

VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7)

VGS = 20V

0.060

0.077

8.7

13

VDD = 50V, ID 28A, RG 9.1, RL = 1.7

MOSFET Switching Times are
Essentially Independent of Operating
Temperature

15

23

ns

70

110

ns

40

60

ns

50

83

ns

VGS = 10V, ID = 28A, VDS = 0.8 x Rated BV DSS ,

Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially
Independent of Operating Temperature

38

59

nC

nC

21

nC

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 11)

1450

pF

550

pF

100

pF

3.5

nH

4.5

nH

7.5

nH

1.25

oC/W

ID = 17A, VGS = 10V (Figures 8, 9)

VDS 50V, ID = 17A (Figure 12)

tf
Qg(TOT)
Qgs

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Internal Drain Inductance

TEST CONDITIONS
ID = 250A, VGS = 0V (Figure 10)

LD

Measured From the

Contact Screw on Tab To
Center of Die

Modified MOSFET Symbol

Showing the Internal
Devices Inductances
D

Measured From the Drain

Lead, 6mm (0.25in) from
Package to Center of Die
Internal Source Inductance

LS

Measured From the

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

LD
G
LS
S

Thermal Resistance Junction to Case

RJC

Thermal Resistance Junction to Ambient

RJA

Free Air Operation

80

oC/W

RJA

RF1S540SM Mounted on FR-4 Board with Minimum

Mounting Pad

62

oC/W

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode

ISD

Pulse Source to Drain Current

(Note 3)

ISDM

MIN

TYP

MAX

28

UNITS
A

110

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time
Reverse Recovery Charge

VSD

TJ

trr

TJ

QRR

TJ

= 25oC, ISD = 27A, VGS = 0V (Figure 13)

= 25oC, ISD = 28A, dISD/dt = 100A/s
= 25oC, ISD = 28A, dISD/dt = 100A/s

2.5

70

150

300

ns

0.2

1.0

1.9

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440H, RG = 25, peak IAS = 28A.
Unless Otherwise Specified

1.2

30

1.0

24

ID, DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

Typical Performance Curves

0.8
0.6
0.4

18

12

0.2
0

125
50
75
100
TC , CASE TEMPERATURE (oC)

25

150

25

175

50

75

100

150

125

175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

ZJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)

10

1
0.5
PDM

0.2
0.1

0.1

t1
t2

0.05
0.02
0.01
0.01
10-5

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC

SINGLE PULSE
10-4

10-3

10-2

10-1

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Typical Performance Curves

Unless Otherwise Specified (Continued)

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

SINGLE PULSE
TJ = MAX RATED
TC = 25o C

100

50
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

300

100s
10

OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)

1ms

VGS = 7V

VGS = 10V
VGS = 8V

40
30

VGS = 6V

20
VGS = 5V
10

10ms

VGS = 4V

0
1

100

10

300

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

ID, DRAIN CURRENT (A)

ID(ON), ON-STATE DRAIN CURRENT (A)

100
VGS = 8V

40

VGS = 7V
VGS = 10V

30

VGS = 6V

20
VGS = 5V
10
VGS = 4V
0
0

10

175oC

0.1
0

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

FIGURE 7. TRANSFER CHARACTERISTICS

3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

0.8
ON RESISTANCE ()

rDS(ON), DRAIN TO SOURCE

25oC

FIGURE 6. SATURATION CHARACTERISTICS

0.6

0.4

VGS = 10V

0.2

VDS 50V

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.0

60

FIGURE 5. OUTPUT CHARACTERISTICS

50
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

12
24
36
48
VDS, DRAIN TO SOURCE VOLTAGE (V)

2.4

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 28A

1.8

1.2

0.6

VGS = 20V

0
0

25

50

75

100

125

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2002 Fairchild Semiconductor Corporation

0
-60 -40 -20

20

40

60

80 100 120 140 160 180

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Typical Performance Curves

3000

ID = 250A

1.15

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD

2400
C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

1.25

Unless Otherwise Specified (Continued)

1.05

0.95

0.85

1800

CISS

1200
COSS
600
CRSS

0.75
-60 -40 -20

20

40

80 100 120 140 160 180

60

10

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1000

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

16

ISD, SOURCE TO DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

20

25oC
12
175oC
8

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

100

175oC
25oC
10

0
0

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

20

30

40

50

0.6
1.2
1.8
2.4
VSD, SOURCE TO DRAIN VOLTAGE (V)

ID , DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

VGS, GATE TO SOURCE VOLTAGE (V)

20

3.0

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

ID = 28A
VDS = 50V

16
VDS = 20V
12
VDS = 80V
8

0
0

12

24

36

48

60

Qg , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Test Circuits and Waveforms
VDS
BVDSS
tP

L
VARY tP TO OBTAIN

IAS

RG

REQUIRED PEAK IAS

VDS
VDD

VDD
-

VGS
DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

tON

tOFF

td(ON)

td(OFF)
tr

VDS

RL

tf

90%

90%

RG

VDD

10%

10%
90%

DUT
VGS
VGS

12V
BATTERY

0.2F

VDS
(ISOLATED
SUPPLY)

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

D
G

Ig(REF)

VDS
DUT

S
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

2002 Fairchild Semiconductor Corporation

VGS

Qgs

0.3F

50%
PULSE WIDTH

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT
REGULATOR

50%

10%

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

IRF540, RF1S540SM Rev. B