BJT Bipolar Junction Transistor

This name is a representation for a device having transfer

resistors. As we have seen a semiconductor offers less
resistance to flow of current in one direction and high
resistance in another direction, we call the device made of
semiconductors as a transistor.
There are basically two types of transistors:
1. Point contact
2. Junction transistor
Junction transistors are more in use compared to point
type transistors. They are preferred due to their
ruggedness and small size. Junction transistors are further
classified into two types
1. PNP
2. NPN
Each has 3 electrodes called emitter, base, and collector.
These are made of P and N types semiconductors
depending on the type.
TRANSISTOR
The transistor was invented by William Shockley in 1947.
Transistors consist of two PN junctions. The junctions are
formed by sandwiching either P-type or N-type
semiconductor layers between a pair of opposite types.
There are two types of transistors one is called PNP
transistor and other is called NPN transistor.
A PNP transistor is composed of two P-type
semiconductors separated by a thin section of N-type as
shown in Figure (a). Similarly, NPN transistor is composed
of two N-type semiconductors separated by a thin section
of P-type as shown in Figure (a). the symbol used for PNP
and NPN transistors are also shown with the diagrams.

Basically, transistor has three portions known as emitter,

base and collector. The portion on one side is the emitter
and the portion on the opposite side is the collector. The
middle portion is called the base and forms two junctions
between the emitter and collector.
EMITTER
The portion on one side of transistor that supplies charge
carriers (i.e. electrons or holes) to the other two portions.
The emitter is a heavily doped region. The emitter is
always forward biased with respect to base so that it can
supply a large number of majority carriers. In both PNP
and NPN transistors emitter base junction always should
be forward biased. Emitter of PNP transistor supplies hole
charges to its junctions with the base. Similarly, the
emitter of PNP transistor supplies free electrons to its
junction with the base.

COLLECTOR

The portion on the other side of the transistor (i.e. the side
opposite to the emitter) that collects the charge carriers
(i.e. electrons or holes). The collector is always larger than
the emitter and base of a transistor. The doping level of
the collector is in between the heavily doping of emitter
and the light doping of the base. In both PNP and NPN
transistors the collector base junction always should be
reverse biased. It function is to remove charge carriers
from junction with the base. Collector of PNP transistor
receives hole charges that flow in the output circuit.
Similarly, the collector of NPN transistor receives
electrons.
BASE
The middle potion which forms two PN junctions between
the emitter and the collector is called the base. The base
of transistor is thin, as compared to the emitter and is a
lightly doped portion. The function of base is to control the
flow of charge carrier. The emitter junctions forward
biased, allowing low resistance emitter circuit. The base
collector junction is reverse biased and showing high
resistance in the collector circuit.
TRANSISTOR CONSTRUCTION
The techniques used for manufacturing transistor are
given as below:
1.
2.
3.
4.
5.

Grown Junction
Alloy or Fused Junction
Diffused Junction
Epitaxial Junction
Point Contact Junction