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IRFBC30AS/L
SMPS MOSFET
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
VDSS
Rds(on) max
ID
600V
2.2
3.6A
D 2 Pak
T O -26 2
Parameter
Max.
3.6
2.3
14
74
0.69
30
7.0
-55 to + 150
Units
A
W
W/C
V
V/ns
C
Notes
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1
5/4/00
IRFBC30AS/L
Static @ TJ = 25C (unless otherwise specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
600
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Reverse Leakage
V(BR)DSS
Typ.
0.67
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
2.2
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.1
Typ.
9.8
13
19
12
510
70
3.5
730
19
31
Max. Units
Conditions
S
VDS = 50V, ID = 2.2A
23
I D = 3.6A
5.4
nC VDS = 480V
11
VGS = 10V, See Fig. 6 and 13
VDD = 300V
ID = 3.6A
ns
RG = 12
RD = 82,See Fig. 10
VGS = 0V
VDS = 25V
pF
= 1.0MHz, See Fig. 5
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Typ.
Max.
Units
290
3.6
7.4
mJ
A
mJ
Typ.
Max.
Units
1.7
40
C/W
Thermal Resistance
Parameter
RJC
RJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
3.6
showing the
A
G
integral reverse
14
S
p-n junction diode.
1.6
V
TJ = 25C, IS = 3.6A, VGS = 0V
400 600
ns
TJ = 25C, IF = 3.6A
1.1 1.7
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFBC30AS/L
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
TOP
0.1
4.5V
20s PULSE WIDTH
TJ = 25 C
0.01
0.1
10
4.5V
100
3.0
10
TJ = 150 C
1
TJ = 25 C
0.1
V DS = 50V
20s PULSE WIDTH
5.0
6.0
7.0
8.0
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10
100
100
0.01
4.0
0.1
0.1
9.0
ID = 3.6A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
TJ , Junction Temperature ( C)
IRFBC30AS/L
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
100
Coss
10
Crss
20
10000
10
100
VDS = 480V
VDS = 300V
VDS = 120V
16
12
1
1
ID = 3.6A
1000
12
16
20
24
100
100
10
TJ = 150 C
TJ = 25 C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
10us
10
100us
0.1
1ms
10ms
TC = 25 C
TJ = 150 C
Single Pulse
10
100
1000
10000
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IRFBC30AS/L
4.0
RD
VDS
VGS
D.U.T.
RG
3.0
-VDD
10V
Pulse Width 1 s
Duty Factor 0.1 %
2.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( C)
10%
VGS
td(on)
tr
t d(off)
tf
10
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
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IRFBC30AS/L
400
D R IV E R
VDS
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1
tp
1 5V
TOP
BOTTOM
ID
1.6A
2.3A
3.6A
300
200
100
0
25
50
75
100
125
150
10 V
QGD
740
VG
Charge
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
720
700
680
660
640
0.0
VGS
1.0
2.0
3.0
4.0
3mA
IG
ID
QGS
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IRFBC30AS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
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IRFBC30AS/L
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
1.7 8 (.07 0)
1.2 7 (.05 0)
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
0.9 3 (.0 37 )
0.6 9 (.0 27 )
0.25 (.0 10 )
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRFBC30AS/L
Package Outline
TO-262 Outline
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IRFBC30AS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
1 .6 5 ( .0 6 5 )
0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )
1 5 .42 (.60 9 )
1 5 .22 (.60 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TRL
1 .75 (.06 9 )
1 .25 (.04 9 )
1 0.9 0 (.4 2 9)
1 0.7 0 (.4 2 1)
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .1 0 (.63 4 )
15 .9 0 (.62 6 )
F E E D D IR E C T IO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
3 30 .00
( 14.1 73 )
MAX.
Notes:
6 0.0 0 (2.36 2)
M IN .
N O TE S :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30.4 0 (1.19 7)
M A X.
4
tions
TJ 150C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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8000
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Data and specifications subject to change without notice. 5/00
10
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