2N65xx (ON)

ON Semiconductor
NPN
2N6515
2N6517
PNP
2N6520
High Voltage Transistors

MAXIMUM RATINGS
Symbol
2N6515
2N6517
2N6520
Unit
CollectorEmitter Voltage
VCEO
250
350
Vdc
CollectorBase Voltage
VCBO
250
350
Vdc
EmitterBase Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
Rating
Voltage and current are negative

for PNP transistors
Vdc
6.0
5.0
Base Current
IB
250
mAdc
Collector Current
Continuous
IC
500
mAdc
Total Device Dissipation

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C
Total Device Dissipation

@ TC = 25C
Derate above 25C
PD
1.5
12
Watts
mW/C
Operating and Storage

Junction
Temperature Range
TJ, Tstg
55 to +150
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
C/W
Thermal Resistance, Junction to Case
RJC
83.3
C/W
2
BASE
NPN
1
EMITTER
COLLECTOR
3
2
BASE
PNP
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
250
350
250
350
6.0
5.0
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 100 Adc, IE = 0 )
EmitterBase Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)CEO
2N6515
2N6517, 2N6520
Vdc
V(BR)CBO
2N6515
2N6517, 2N6520
Vdc
V(BR)EBO
2N6515, 2N6517
2N6520
Vdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Semiconductor Components Industries, LLC, 2001
October, 2001 Rev. 3
Publication Order Number:

2N6515/D
NPN 2N6515 2N6517 PNP 2N6520

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Symbol
Min
Max
50
50
50
50
2N6515
2N6517, 2N6520
35
20
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
50
30
2N6515
2N6517, 2N6520
50
30
300
200
2N6515
2N6517, 2N6520
45
20
220
200
2N6515
2N6517, 2N6520
25
15
0.30
0.35
0.50
1.0
0.75
0.85
0.90
Characteristic
Unit
OFF CHARACTERISTICS (Continued)

Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)
2N6515
2N6517, 2N6520
ICBO
Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
2N6515, 2N6517
2N6520
nAdc
IEBO
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
hFE
CollectorEmitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
Vdc
BaseEmitter Saturation Voltage

VBE(sat)
BaseEmitter On Voltage
VBE(on)
2.0
Vdc
fT
40
200
MHz
Ccb
6.0
pF
80
100
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
2N6515, 2N6517
2N6520
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
200
TurnOff Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
3.5
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
NPN 2N6515 2N6517 PNP 2N6520
hFE , DC CURRENT GAIN
200
VCE = 10 V
TJ = 125C
100
25C
70
-55C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 1. DC Current Gain NPN 2N6515
VCE = 10 V
100
200
TJ = 125C
VCE = -10 V
200
25C
70
50
-55C
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
100
30
20
50
TJ = 25C
VCE = 20 V
f = 20 MHz
20
3.0
5.0 7.0 10
20 30
50 70
100
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
70
2.0
-2.0 -3.0 -5.0 -7.0 -10

-20 -30
-50 -70 -100
Figure 3. DC Current Gain PNP 2N6520
100
10
1.0
-55C
50
Figure 2. DC Current Gain NPN 2N6517
30
25C
70
10
-1.0
50 70 100
TJ = 125C
Figure 4. CurrentGain Bandwidth Product NPN

2N6515, 2N6517
100
70
50
30
TJ = 25C
VCE = -20 V
f = 20 MHz
20
10
-1.0
-2.0 -3.0 -5.0 -7.0 -10

-20 -30
-50 -70 -100
Figure 5. CurrentGain Bandwidth Product PNP

2N6520
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3
NPN 2N6515 2N6517 PNP 2N6520

NPN
1.4
-1.4
TJ = 25C
1.2
-1.2
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
1.0
2.0
-1.0
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -10 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
3.0
5.0 7.0 10
20 30
50 70 100
0
-1.0
IC
10
IB
2.0
1.5
1.0
25C to 125C
0.5
0
RVC for VCE(sat)

-55C to 25C
-0.5
-1.0
-55C to 125C
-1.5
RVB for VBE
-2.0
-2.5
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
Figure 8. Temperature Coefficients NPN 2N6515,

2N6517
Ceb
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
0.2
2.5
2.0
1.5
IC
10
IB
25C to 125C
1.0
0.5
0
RVB for VBE
-55C to 25C
-0.5
-1.0
-1.5
-2.0
-2.5
-1.0
100
70
50
TJ = 25C
30
VCE(sat) @ IC/IB = 5.0

-2.0 -3.0 -5.0 -7.0 -10
-20 -30
-50 -70 -100
RVC for VCE(sat)
-55C to 125C
-2.0 -3.0 -5.0 -7.0 -10

-20 -30
-50 -70 -100
Figure 9. Temperature Coefficients PNP 2N6520
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100
70
50
VCE(sat) @ IC/IB = 10
Figure 7. On Voltages PNP 2N6520
RV, TEMPERATURE COEFFICIENTS (mV/C)
RV, TEMPERATURE COEFFICIENTS (mV/C)
Figure 6. On Voltages NPN 2N6515, 2N6517
2.5
TJ = 25C
Ceb
TJ = 25C
30
20
10
7.0
5.0
Ccb
3.0
2.0
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
1.0
-0.2
50 100 200
Figure 10. Capacitance NPN 2N6515, 2N6517
-0.5 -1.0 -2.0

-5.0 -10 -20
-50
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance PNP 2N6520
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4
-100 -200
NPN 2N6515 2N6517 PNP 2N6520
td @ VBE(off) = 2.0 V
t, TIME (ns)
300
200
1.0k
700
500
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C
tr
100
70
50
30
20
3.0
5.0 7.0 10
20 30
50
10
-1.0
70 100
Figure 12. TurnOn Time NPN 2N6515, 2N6517
10k
7.0k
5.0k
2.0k
ts
t, TIME (ns)
500
tf
-50 -70 -100
ts
1.0k
700
2.0k
tf
300
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
200
100
70
50
300
200
100
1.0
-2.0 -3.0 -5.0 -7.0 -10

-20 -30
Figure 13. TurnOn Time PNP 2N6520
3.0k
1.0k
700
500
VCE(off) = -100 V
IC/IB = 5.0
TJ = 25C
100
70
50
30
2.0
tr
200
20
10
1.0
td @ VBE(off) = 2.0 V
300
t, TIME (ns)
1.0k
700
500
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
30
2.0 3.0
5.0 7.0 10
20 30
50
20
-1.0
70 100
Figure 14. TurnOff Time NPN 2N6515, 2N6517
-2.0 -3.0 -5.0 -7.0 -10

-20 -30
-50 -70 -100
Figure 15. TurnOff Time PNP 2N6520
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5
NPN 2N6515 2N6517 PNP 2N6520

+VCC
VCC ADJUSTED
FOR VCE(off) = 100 V
+10.8 V
2.2 k
20 k
50 SAMPLING SCOPE
1.0 k
50
1/2MSD7000
-9.2 V
PULSE WIDTH 100 s
tr, tf 5.0 ns
DUTY CYCLE 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
APPROXIMATELY
-1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
Figure 16. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
SINGLE PULSE
0.05
SINGLE PULSE
ZJC(t) = r(t) RJC TJ(pk) - TC = P(pk) ZJC(t)
ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10k
Figure 17. Thermal Response
500
TA = 25C
200
100
PP
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25C)
SECOND BREAKDOWN LIMIT
10
5.0
2.0
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
tP
1.0 ms
TC = 25C
50
FIGURE A
10 s
100 s
0.5
1.0
PP
t1
2N6515
1/f
t
DUTYCYCLE t1f 1
tP
PEAK PULSE POWER = PP
2N6517, 2N6520
2.0
5.0
10
20
50 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 18. Active Region Safe Operating Area
500
Design Note: Use of Transient Thermal Resistance Data
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6
NPN 2N6515 2N6517 PNP 2N6520

PACKAGE DIMENSIONS
CASE 02904
(TO226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
SEATING
PLANE
K
D
J
X X
G
H
V
SECTION XX
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
NPN 2N6515 2N6517 PNP 2N6520
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
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High Voltage Transistors

Voltage and current are negative

Total Device Dissipation

Total Device Dissipation

Operating and Storage

CASE 2904, STYLE 1

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

October, 2001 Rev. 3

Publication Order Number:

NPN 2N6515 2N6517 PNP 2N6520

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

OFF CHARACTERISTICS (Continued)

Emitter Cutoff Current

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

NPN 2N6515 2N6517 PNP 2N6520

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain NPN 2N6515

hFE , DC CURRENT GAIN

-2.0 -3.0 -5.0 -7.0 -10

-50 -70 -100

Figure 3. DC Current Gain PNP 2N6520

Figure 2. DC Current Gain NPN 2N6517

Figure 4. CurrentGain Bandwidth Product NPN

-2.0 -3.0 -5.0 -7.0 -10

-50 -70 -100

Figure 5. CurrentGain Bandwidth Product PNP

NPN 2N6515 2N6517 PNP 2N6520

VBE(on) @ VCE = -10 V

RVC for VCE(sat)

RVB for VBE

Figure 8. Temperature Coefficients NPN 2N6515,

RVB for VBE

VCE(sat) @ IC/IB = 5.0

RVC for VCE(sat)

-2.0 -3.0 -5.0 -7.0 -10

-50 -70 -100

Figure 9. Temperature Coefficients PNP 2N6520

Figure 7. On Voltages PNP 2N6520

RV, TEMPERATURE COEFFICIENTS (mV/C)

RV, TEMPERATURE COEFFICIENTS (mV/C)

Figure 6. On Voltages NPN 2N6515, 2N6517

Figure 10. Capacitance NPN 2N6515, 2N6517

-0.5 -1.0 -2.0

Figure 11. Capacitance PNP 2N6520

NPN 2N6515 2N6517 PNP 2N6520

Figure 12. TurnOn Time NPN 2N6515, 2N6517

-50 -70 -100

-2.0 -3.0 -5.0 -7.0 -10

Figure 13. TurnOn Time PNP 2N6520

Figure 14. TurnOff Time NPN 2N6515, 2N6517

-2.0 -3.0 -5.0 -7.0 -10

-50 -70 -100

Figure 15. TurnOff Time PNP 2N6520

NPN 2N6515 2N6517 PNP 2N6520

(ADJUST FOR V(BE)off = 2.0 V)