ANALOG

PROJECT
REPORT
15th Nov 2016

Design a voltage divider bias

circuit with given specifications

Submitted by Utkarsh Bajaj EC/2k15/174

Utkarsh Verma EC/2k15/175
Varnika Gupta EC/2k15/177
Sumit Kumar EC/2k15/162

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Aim:
To design a voltage divider bias circuit by using the following
specifications

Apparatus Used:
Breadboard, Power Supply, Resistors, Wires

About the project (Theory):

We were given the values, VCC= 15V, VCE=5V, VE = 5V for the
voltage divider circuit
The goal of transistor biasing is to establish a known Q-point in
order for the transistor to work efficiently and produce an
undistorted output signal. Correct biasing of the transistor also
establishes its initial AC operating region with practical biasing
circuits using either a two or four-resistor bias network.
In bipolar transistor circuits, the Q-point is represented by (VCE, IC)
for the NPN transistors or (VEC, IC) for PNP transistors. The stability
of the base bias network and therefore the Q-point is generally
assessed by considering the collector current as a function of both
Beta () and temperature.
This voltage divider configuration is the most widely used
transistor biasing method. The common emitter transistor is
biased using a voltage divider network to increase stability. The
name of this biasing configuration comes from the fact that the
two resistors RB1 and RB2 form a voltage or potential divider
network with their center point connecting the transistors base
terminal directly across the supply.
The current in resistance RE in the emitter lead causes a voltage
drop, which is in the direction to reverse-bias the emitter junction.

Since this junction must be forward-biased the base voltage is

obtained from the supply through RB1RB2 network.
Also, voltage divider network biasing makes the transistor circuit
independent of changes in beta as the voltages at the transistors
base, emitter, and collector are dependent on external circuit
values.
To calculate the voltage developed across resistor RB2 and
therefore the voltage applied to the base terminal we simply use
the voltage divider formula for resistors in series.
Generally, the voltage drop across resistor RB2 is much less than
for resistor RB1. Then clearly the transistors base voltage VB with
respect to ground, will be equal to the voltage across RB2.
The current flowing through resistor RB2 is generally set at 10
times the value of the required base current IB so that it has no
effect on the voltage divider current or changes in Beta.

Circuit Diagram and Formulae:

OBSERVATIONS:

Experimental Values
VB
VC
IE
IB

Theoretical Values
VB
VC
IE
IB

Voltage gain =

Current gain =

CALCULATIONS:
Given:
Vcc = 15 V
transistor)
VCE = 5 V
VE = 5 V
IC = 5 mA
VCE = VC - VE
5= VC - 5
VC= 10 V
Applying KVL:
VCC - RCIC= VC
15 - RC (5) = 10

From Data Sheet:

=330 (for BC108C NPN

RC = 1 K
IC = IE/ +1
IC +1/ = IE
IE = 5.016 mA
VE - IERE = 0
VE/IE = RE

=> 0.996 K (1 K )

Let the current through RB1RB2 be 0.1IC Therefore,

VCC = (0.1) IC (RB1+RB2)

RB1+RB2= 30 K
VBE= VB - VE
0.7= VB- 5
VB= 5.7 V
VCC - VB = I1RB1
9.3=5/10 RB1
RB1= 18.6 K

RB2= 11.4 K

CONCLUSION:

RESULT: