1N5059 to 1N5062

VISHAY

Vishay Semiconductors

Standard Avalanche Sinterglass Diode

\

Features

Controlled avalanche characteristics

Glass passivated
Low reverse current
High surge current loading
Hermetically sealed axial-leaded glass envelope

Applications
Rectification diode, general purpose
949539

Mechanical Data
Case: Sintered glass case, SOD 57
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 370 mg, (max. 500 mg)

Parts Table
Part

Type differentiation

Package

1N5059

VR = 200 V; IFAV = 2 A

SOD57

1N5060

VR = 400 V; IFAV = 2 A

SOD57

1N5061

VR = 600 V; IFAV = 2 A

SOD57

1N5062

VR = 800 V; IFAV = 2 A

SOD57

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage

Sub type

Symbol

Value

Unit

see electrical characteristics

Test condition

1N5059

VR =
VRRM

200

see electrical characteristics

1N5060

VR =
VRRM

400

see electrical characteristics

1N5061

VR =
VRRM

600

see electrical characteristics

1N5062

VR =
VRRM

800

Peak forward surge current

tp = 10 ms, half-sinewave

IFSM

50

Average forward current

RthJA = 45 K/W, Tamb = 50 C

IFAV

IFAV

0.8

RthJA = 100K/W, Tamb = 75 C

Junction and storage temperature range
Max. pulse energy in avalanche mode, non
repetitive (inductive load switch off)

Document Number 86000

Rev. 4, 07-Jan-03

Tj = T stg - 55 to +
175
I(BR)R = 1 A, indicutive load

ER

20

A
C
mJ

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1N5059 to 1N5062

VISHAY

Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Junction ambient

Symbol

Value

Unit

Lead length l = 10 mm,

TL = constant

Sub type

RthJA

45

K/W

on PC board with spacing 25 mm

RthJA

100

K/W

Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Forward voltage
Reverse current

Reverse breakdown voltage

Max

Unit

IF = 1 A

Sub type

Symbol
VF

Min

Typ.

IF = 2.5 A

VF

1.15

VR = VRRM

IR

VR = VRRM, Tj = 100 C

IR

10

VR = VRRM, Tj = 150 C

IR

100

IR = 100 A

1N5059

V(BR)R

225

1600

IR = 100 A

1N5060

V(BR)R

450

1600

IR = 100 A

1N5061

V(BR)R

650

1600

IR = 100 A

1N5062

V(BR)R

900

1600

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

Diode capacitance

VR = 0 V, f = 1 MHz

CD

40

pF

Typical Characteristics (Tamb = 25 C unless otherwise specified)

1000.0

PR Reverse Power Dissipation ( mW )

200
VR = VRRM

VR = VRRM

1N5062

45K/W
120

IR Reverse Current ( mA )

RthJA=

160

100K/W

1N5061

160K/W

80

1N5060
1N5059

40

100.0

1.0

0.1
25

50

15764

75

100

125

150

175

Tj Junction Temperature ( C )

Figure 1. Max. Reverse Power Dissipation vs. Junction

Temperature

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2

10.0

25
15765

50

75

100

125

150

175

Tj Junction Temperature ( C )

Figure 2. Max. Reverse Current vs. Junction Temperature

Document Number 86000

Rev. 4, 07-Jan-03

1N5059 to 1N5062

VISHAY

Vishay Semiconductors

50
VR=VRRM
half sinewave

2.5

f=1MHz
CD Diode Capacitance ( pF )

I FAV Average Forward Current ( A )

3.0

RthJA=45K/W
l=10mm

2.0
1.5
1.0
RthJA=100K/W
PCB: d=25mm

0.5

40
30
20
10

0.0

0
0

15763

20

0.1

40

60 80 100 120 140 160 180

Tamb Ambient Temperature ( C )

15766

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1.0
10.0
VR Reverse Voltage ( V )

100.0

Figure 5. Typ. Diode Capacitance vs. Reverse Voltage

IF Forward Current ( A )

100
Tj=175C

10

Tj=25C

1
0.1
0.01

0.001
15762

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VF Forward Voltage ( V )

Figure 4. Max. Forward Current vs. Forward Voltage

Package Dimensions in mm
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5g

26 min.

Document Number 86000

Rev. 4, 07-Jan-03

Cathode Identification

4.2 max.

94 9538
technical drawings
according to DIN
specifications

0.82 max.

26 min.

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1N5059 to 1N5062

VISHAY

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 86000

Rev. 4, 07-Jan-03

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