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Introduction
tions are carried out through both simulation and experimental measurement. Based on the analytical result, the
suitability of IGBTs for hard and soft switching applications is studied from a practical point of view.
2
Analytical method
Type B
nonepitaxial
wafer
epitaxial
epitaxial
gate structure
planar
trench
planar
1.9v
3.1V
Current density
at IC= 50A
100A/cm2
140A/cm2
75A/cm2
n+ buffer layer
with local
with local
without local
lifetime control lifetime control lifetime control
No
No
1 wm
3wm
0E E , 2001
design rule
Dot lO.lO49/ipepa:2oOlO487
Paper first received 6th June 2000 and in revised form 27th April 2001
H. Iwamoto, H. Kondo, Y. Yu and A. Kawakami are with the Power Device
Division, Mitsubishi Electric Co., Fukuoka, Japan
M. Nakaoka is with the Electrid System Division, The Graduate School of
Science and Engheering, Yamaguchi University, Yamaguchi, Japan
3wm
443