MMBT3906

PZT3906
C

E
C

TO-92
E

SOT-23

SOT-223

Mark: 2A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA.

Absolute Maximum Ratings*

Symbol

TA = 25C unless otherwise noted

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

-40

VCBO

Collector-Base Voltage

-40

VEBO

Emitter-Base Voltage

-5.0

IC

Collector Current - Continuous

-200

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD

TA = 25C unless otherwise noted

Characteristic

RJC

Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

Max

Units

2N3906
625
5.0
83.3

*MMBT3906
350
2.8

**PZT3906
1,000
8.0

200

357

125

mW
mW/C
C/W
C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2010 Fairchild Semiconductor Corporation

2N3906/MMBT3906/PZT3906, Rev A1

2N3906 / MMBT3906 / PZT3906

2N3906

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = -1.0 mA, IB = 0

-40

V(BR)CBO

Collector-Base Breakdown Voltage

IC = -10 A, IE = 0

-40

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = -10 A, IC = 0

-5.0

IBL

Base Cutoff Current

VCE = -30 V, V BE= -3.0 V

-50

nA

ICEX

Collector Cutoff Current

VCE = -30 V, VBE= -3.0 V

-50

nA

ON CHARACTERISTICS
hFE

DC Current Gain *

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

IC = -0.1 mA, VCE= -1.0 V

IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V
IC = -10 mA, I B = -1.0 mA
IC = -50 mA, I B = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA

60
80
100
60
30

-0.65

300

-0.25
-0.4
-0.85
-0.95

V
V
V
V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

Cobo

Output Capacitance

Cibo

Input Capacitance

NF

Noise Figure

IC = -10 mA, VCE = -20 V,

f = 100 MHz
VCB = -5.0 V, IE = 0,
f = 100 kHz
VEB = -0.5 V, IC = 0,
f = 100 kHz
IC = -100 A, VCE = -5.0 V,
RS =1.0 k, f=10 Hz to 15.7 kHz

250

MHz
4.5

pF

10.0

pF

4.0

dB

ns

SWITCHING CHARACTERISTICS
td

Delay Time

VCC = -3.0 V, VBE = -0.5 V,

35

tr

Rise Time

IC = -10 mA, IB1= -1.0 mA

35

ns

ts

Storage Time

VCC = -3.0 V, IC = -10 mA

225

ns

tf

Fall Time

IB1 = IB2 = -1.0 mA

75

ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

250
V CE = 1 .0V
125 C

200

150
25 C

100

50
0.1

- 40 C

0.2

0.5 1
2
5
10 20
I C - COLLECTOR CURRE NT (mA)

50

100

Base-Emitter Saturation
Voltage vs Collector Current
= 10

- 40 C

0.8
25 C
125 C

0.6
0.4
0.2
0

10
100
I C - COLLECTOR CURRE NT (mA)

200

V CESAT - COLLECTOR EMITTER VOLTAGE (V)

Typical Pulsed Current Gain

vs Collector Current

VBE( ON)- BASE EMITTER ON VOLTAGE (V)

V BESAT - BASE EM ITTE R VOLTAGE (V)

h F E - TYPICAL PULSED CURRENT GAIN

Typical Characteristics

Collector-Emitter Saturation
Voltage vs Collector Current
0.3

= 10

0.25
0.2
0.15

25 C

0.1
125C

0.05
0

- 40 C

1
0.8
- 40 C

125 C

0.4

= 25V

0
0.1

1
10
I C - COLLECTOR CURRENT (mA)

25

10
C obo

CAPACITANCE (pF)

I CBO - COLLE CTOR CURRENT (nA)

V CE = 1V

0.2

Common-Base Open Circuit

Input and Output Capacitance
vs Reverse Bias Voltage

10

0.1

0.01
25

25 C

0.6

100
CB

200

Base Emitter ON Voltage vs

Collector Current

Collector-Cutoff Current
vs Ambient Temperature
V

10
100
I C - COLLECTOR CURRENT (mA)

50
75
100
TA - AMBIE NT TEMP ERATURE ( C)

125

8
6
4

C ibo

2
0
0.1

1
REVERSE BIAS VOLTAGE (V)

10

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Noise Figure vs Frequency

Noise Figure vs Source Resistance

12
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

V CE = 5.0V
5
4
3

I C = 100 A, R S = 200

2
I C = 1.0 mA, R S = 200

I C = 100 A, R S = 2.0 k

0
0.1

1
10
f - FREQUENCY (kHz)

V CE = 5.0V
f = 1.0 kHz

10
I C = 1.0 mA

8
6
4

I C = 100 A

2
0
0.1

100

1
10
R S - SOURCE RESISTANCE ( k )

Switching Times
vs Collector Current

Turn On and Turn Off Times

vs Collector Current

500

500
ts

tf

10
I B1 = I B2 =

tr

Ic

t off

100
TIME (nS)

100

t on I
B1 =

Ic
10

t on

VBE(OFF) = 0.5V

10

Ic
t off I = I =
B1
B2
10

10
td

10
I C - COLLECTOR CURRENT (mA)

100

1
I

10
- COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

TIME (nS)

100

SOT-223
0.75

TO-92

0.5

SOT-23
0.25

25

50
75
100
TEMPERATURE (o C)

125

150

100

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics

Input Impedance

Voltage Feedback Ratio

10

100
h ie - INPUT IMPEDANCE (k )

_ 4

h re - VOLTAGE FEEDBACK RATIO (x10

(continued)

10

1
0.1

1
I C - COLLECTOR CURRENT (mA)

0.1
0.1

10

1
I C - COLLECTOR CURRENT (mA)

10

Current Gain
1000

V CE = 10 V
f = 1.0 kHz

500
h fe - CURRENT GAIN

h oe - OUTPUT ADMITTANCE ( mhos)

Output Admittance
1000

VCE = 10 V
f = 1.0 kHz

100

V CE = 10 V
f = 1.0 kHz

200
100
50

20

10
0.1

1
I C - COLLECTOR CURRENT (mA)

10

10
0.1

1
I C - COLLECTOR CURRENT (mA)

10

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DOME
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST

FASTr
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP

PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
SuperSOT-3
SuperSOT-6
SuperSOT-8

SyncFET
TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G