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VISHAY
Vishay Semiconductors
GND
VS
OUT
94 8691
Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Improved shielding against electrical field disturbance
TTL and CMOS compatibility
Output active low
Low power consumption
No occurrence of disturbance pulses at the output
Special Features
Part
Carrier Frequency
TSOP1330
30 kHz
TSOP1333
33 kHz
TSOP1336
36 kHz
TSOP1337
36.7 kHz
TSOP1338
38 kHz
TSOP1340
40 kHz
TSOP1356
56 kHz
Application Circuit
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
Parts Table
Block Diagram
R1 = 100
VS
OUT
GND
+VS
C1 =
4.7 F
C
VO
GND
2
25 k
VS
3
Input
AGC
Band
Pass
Demodulator
OUT
1
PIN
Control Circuit
GND
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TSOP13..
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VS
- 0.3 to +
6.0
IS
mA
VO
- 0.3 to +
6.0
mA
Supply Voltage
(Pin 2)
Supply Current
(Pin 2)
Output Voltage
(Pin 3)
Output Current
(Pin 3)
IO
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Tj
100
Tstg
- 25 to + 85
Tamb
- 25 to + 85
Power Consumption
(Tamb 85 C)
Ptot
50
mW
Soldering Temperature
t 10 s, 1 mm from case
Tsd
260
Test condition
Symbol
Min
Typ.
Max
Unit
VS = 5 V, Ev = 0
ISD
0.8
1.2
1.5
mA
VS = 5 V, Ev = 40 klx, sunlight
ISH
1.5
VS
Transmission Distance
VOSL
Ee min
4.5
mA
5.5
35
V
m
250
mV
0.4
0.6
mW/m2
Ee min
0.35
0.5
mW/m2
Ee min
0.45
0.7
mW/m2
Ee min
0.40
0.6
mW/m2
Irradiance
Ee max
Directivity
30
1/2
W/m2
45
deg
tpi *)
T
*) tpi w 6/fo is recommended for optimal function
Output Signal
VO
1)
2)
VOH
VOL
14337
td1 )
tpo2 )
0.35
t po Output Pulse Width ( ms )
Ee
0.30
Output Pulse
0.25
0.20
0.15
0.10
l = 950 nm,
optical test signal, fig.1
0.05
0.00
0.1
16907
1.0
10.0
100.0 1000.010000.0
Ee Irradiance ( mW/m2 )
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TSOP13..
VISHAY
Vishay Semiconductors
Optical Test Signal
600 ms
600 ms
T = 60 ms
94 8134
VO
VOH
VOL
Ton
4.0
Ee
3.0
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
Toff
3.5
1.0
0.9
Ton
0.7
0.6
0.5
Toff
0.4
0.3
l = 950 nm,
optical test signal, fig.3
0.2
0.1
0.0
0.1
1.0
10.0
100.0 1000.010000.0
Ee Irradiance ( mW/m2 )
16910
1.0
0.8
0.6
0.4
f = f0"5%
Df ( 3dB ) = f0/10
0.9
1.1
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
2.0
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
1.3
16925
100.00
1.2
0.0
0.7
10.00
2.0
16912
0.2
1.00
0.8
0.10
16911
94 8147
0.4
0.8
1.2
1.6
2.0
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TSOP13..
VISHAY
Vishay Semiconductors
0q
0.7
10q
20q
30q
0.6
0.5
40q
1.0
0.4
0.3
0.9
50q
0.8
60q
0.2
70q
0.7
f = 38 kHz, Ee = 2 mW/m2
0.1
80q
0.0
0
20
40
60
80
100
120
16916
0.6
95 11340p2
0q
0.6
0.5
10q
20q
30q
0.4
1.0
0.3
0.9
50q
0.2
0.8
60q
0.1
0.7
70q
80q
0.0
30 15
15
30
45
60
75
90
16918
0.6
0.4
0.2
0
0.2
0.4
drel Relative Transmission Distance
1.2
1.0
0.8
0.6
0.4
0.2
0
750
0.6
95 11339p2
0.6
0.4
0.2
0
0.2
0.4
drel Relative Transmission Distance
850
94 8408
950
1050
1150
l Wavelength ( nm )
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TSOP13..
VISHAY
Vishay Semiconductors
IR Signal
0
16921
10
15
20
Time ( ms )
IR Signal
16920
10
15
20
Time ( ms )
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TSOP13..
VISHAY
Vishay Semiconductors
Package Dimensions in mm
+0.1
96 12116
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TSOP13..
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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