3.5.

Example: inclusion of semiconductor

conduction losses in the boost converter model
Boost converter example
L

+
iC
Vg

DTs

Ts

Models of on-state semiconductor devices:

MOSFET: on-resistance Ron
Diode: constant forward voltage VD plus on-resistance RD
Insert these models into subinterval circuits

Fundamentals of Power Electronics

25

Chapter 3: Steady-state equivalent circuit modeling, ...

Boost converter example: circuits during

subintervals 1 and 2
L

+
iC
Vg

DTs

Ts

RL

+ vL
Vg

switch in position 2
i
+

iC
Ron

Fundamentals of Power Electronics

26

RL

RD

switch in position 1
i

+ vL
Vg

VD

iC
C

Chapter 3: Steady-state equivalent circuit modeling, ...

Average inductor voltage and capacitor current

vL(t)

Vg IRL IRon
DTs

D'Ts
t
Vg IRL VD IRD V

iC(t)
I V/R
t
V/R

vL = D(Vg IRL IRon) + D'(Vg IRL VD IRD V) = 0

iC = D(V/R) + D'(I V/R) = 0
Fundamentals of Power Electronics

27

Chapter 3: Steady-state equivalent circuit modeling, ...

Construction of equivalent circuits

Vg IRL IDRon D'VD ID'RD D'V = 0
D'VD

DRon

D'RD

RL

+ IRL + IDRon
Vg

+ ID'RD
+

D'I V/R = 0

D'V

V/R
+
D'I

Fundamentals of Power Electronics

28

Chapter 3: Steady-state equivalent circuit modeling, ...

Complete equivalent circuit

D'VD

DRon

D'RD

RL

Vg

+
D'V

D'I

D'VD

DRon

D'RD

RL

Vg

D' : 1
+
V

Fundamentals of Power Electronics

29

Chapter 3: Steady-state equivalent circuit modeling, ...

Solution for output voltage

D'VD

DRon

D'RD

D' : 1

RL

Vg

+
V

V= 1
D'

Vg D'VD

V = 1
Vg
D'

Fundamentals of Power Electronics

D'VD
Vg

D' 2R
D' 2R + RL + DRon + D'RD

1
R + DRon + D'RD
1+ L
D' 2R

30

Chapter 3: Steady-state equivalent circuit modeling, ...

Solution for converter efficiency

D'VD

DRon

RL

Pin = (Vg) (I)

Vg

Pout = (V) (D'I)

1+

D' : 1
+
V

= D' V =
Vg

D'RD

D'VD
Vg

RL + DRon + D'RD
D' 2R

Conditions for high efficiency:

Vg/D' > V D
D' 2R > RL + DRon + D'RD
Fundamentals of Power Electronics

31

Chapter 3: Steady-state equivalent circuit modeling, ...

Accuracy of the averaged equivalent circuit

in prediction of losses
Model uses average
currents and voltages
To correctly predict power
loss in a resistor, use rms
values
Result is the same,
provided ripple is small

MOSFET current waveforms, for various

ripple magnitudes:
i(t)

2I
(c)
(b)
(a)

0
DTs

0
Inductor current ripple
(a) i = 0
(b) i = 0.1 I
(c) i = I

Fundamentals of Power Electronics

1.1 I

MOS FET rms current

I

(1.00167) I
(1.155) I

32

Ts

Average power loss in R on

D I2 R on

D
D

(1.0033) D I2 R on
(1.3333) D I2 R on

Chapter 3: Steady-state equivalent circuit modeling, ...