MM1 09 N06K

Datasheet

N-Channel MOSFET
Applications:
RDS(ON)(MAX)
8m

IDa
109A

TC=25 unless otherwise specified

Parameter
Value

Unit

VDSS
60V

Power Supply
DC-DC Converters

Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Charge for Fast Switching Application
Optimized BVDSS Capability

Ordering Information
Park Number
MM109N06K

Package
TO-220

Brand
MacMic

Absolute Maximum Ratings

Symbol
VDSS
a
ID
IDM
PD
VGS
EAS
IAS
TJ and TSTG

Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current @VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche Energy
(L=1mH, IAS=40A)
Pulsed Avalanche Energy
Operating Junction and Storage Temperature Range

60
109
436
150
1.00
+/-20

W
W/
V

800

mJ

Figure 7
-55 to 175

Thermal Resistance
Symbol

Parameter

RJC

Junction-to-Case

RJA

Junction-to-Ambient

Min Typ Max Unit

1.00

62

Test Conditions

Water cooled heatsink, PD

adjusted for a peak junction
/W
Temperature of 175
1 cubic foot chanber, free air

Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175. Package limitation current is 80A.

Page1

OFF Characteristics
Parameter

Symbol
BVDSS

Drain-to-Source Breakdown Voltage

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

ON Characteristics
Symbol
RDS(ON)
VGS(TH)

Parameter
Static Drain-to-Source On-Resistance
Gate Threshold Voltage.

Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf

Parameter

VSD
trr
Qrr

60

Parameter

V
1
100
100
100

uA
nA

VGS=0V, ID=250uA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, TJ=125

VGS=+20V
VGS= -20V

TJ=25 unless otherwise specified

Test Conditions
Min Typ Max Unit
6.3
2

8
4

m VGS=10V, ID=24A
V VGS=VDS, ID=250uA

Essentially independent of operating temperature

Test Conditions
Min Typ Max Unit

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-in Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Source-Drain Diode Characteristics

Symbol

TJ=25 unless otherwise specified

Test Conditions
Min Typ Max Unit

3395
435
150
50
21
14
14
43
31
11

pF

VGS=0V, VDS=25V, f=1.0MHz

nC

VDD=30V, ID=38A, VGS=10V

nS

VDD=30V, ID=38A, VG=10V,

RG=2.5

TJ=25 unless otherwise specified

Test Conditions
Min Typ Max Unit

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Change

1.2
52
74

Page2

V
ns
nC

IS=30A, VGS=0V
IF=38Amps,
di/dt=100Amps/uS

Figure 2. Maximum Continuous Drain

Current V.S Case Temperature
120
ID, Drain Current(A)

160
140
120
100
80
60
40
20
0

80
60
40
20
0

ID, Drain Current(A)

100

25

50

75

100 125 150 175

25

75

100 125 150 175

TC, Case Temperature( oC)

Figure 3. Typical Output Characteristics

Figure 4. Breakdown Voltage V.S

Junction Temperature

80
70
60
50
40
30
20
10
0

VGS=10, 9, 8, 7V

VGS=6V

VGS=5V
0

0.5

1.5

2.5

1.18
1.13
1.08
1.03
0.98
0.93
0.88
-75

VDS, Drain-to Source Voltage(A)

-25

25

75

125

175

TJ, Junction Temperature( oC)

Figure 6. Drain-to-Source Resistance V.S

Junction Temperature

Figure 5. Threshold Voltage V.S

Junction Temperature

2.50

1.40
1.20

RDS(ON), Drain-to-Source
Resistance (Normalized)

Vth, Threshold Voltage

(Normalized)

50

TC, Case Temperature( oC)

Drain-to-Source Breakdown
Voltage (Normalized)

PD, Power Dissipation(W)

Figure 1. Maximum Power Dissipation

V.S Case Temperature

1.00
0.80
0.60
0.40
0.20

2.00
1.50
1.00
0.50
0.00

0.00
-75

-25

25

75

125

-75

175

-25

25

75

125

TJ, Junction Temperature( oC)

TJ, Junction Temperature(oC)

Page3

175

4500

10
9
8
7
6
5
4
3
2
1
0

Figure 8. Typical Capacitance vs. Drainto-Source Voltage

4000

CISS

3500
C, Capacitance(pF)

VGS. Gate-to-Source Voltage(V)

Figure 7. Typical Gate Charge vs. Gateto-Source Voltage

3000
2500
2000

COSS

1500

CRSS

1000
500
0

10

20
30
QG, Gate Charge(nC)

40

50

10

20
30
40
VDS, Drain Voltage(V)

50

60

Figure 10. Source-Drain Diode Forward

Voltage

Figure 9. Unclamped Inductive

Switching Capability
1000

ISD, Reverse Drain Current(A)

IAS, Avalanche Current(A)

1000

Starting TJ=25
100

10

TJ=175
10

TJ=25
1

VGS=0
0

1
1.E-04

100

1.E-03

1.E-02

1.E-01

tAV, Time in Avalanche(s)

Page4

0.00

0.40
0.80
1.20
1.60
VSD, Source-to-Drain Voltage(V)

2.00