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MOSFET
600VCoolMOSCEPowerTransistor
PG-SOT223
CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSCEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Veryhighcommutationruggedness
Easytouse/drive
Pb-freeplating,Halogenfreemoldcompound
Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Applications
Source
Pin 3
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
RDS(on),max
Qg,typ
13
nC
ID,pulse
11.8
Eoss@400V
1.3
500
A/s
Type/OrderingCode
Package
Marking
IPN60R1K0CE
PG-SOT223
60S1K0
RelatedLinks
see Appendix A
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
1Maximumratings
atTj=25C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
6.8
4.3
TC = 25C
TC = 100C
11.8
TC = 25C
46
mJ
EAR
0.13
mJ
IAR
0.8
dv/dt
50
V/ns
VDS=0...480V
VGS
-20
-30
20
30
static;
AC (f>1 Hz)
Power dissipation
Ptot
5.0
TC=25C
Tj,Tstg
-40
150
IS
1.4
TC=25C
IS,pulse
11.8
TC = 25C
dv/dt
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25C
dif/dt
500
A/s VDS=0...400V,ISD<=IS,Tj=25C
Min.
Typ.
Max.
ID
ID,pulse
EAS
2)
3)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJS
23.2
C/W -
160
75
260
Tsold
reflow MSL3
1)
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Values
Unit
Note/TestCondition
VGS=0V,ID=0.25mA
3.50
VDS=VGS,ID=0.13mA
10
1
-
VDS=600V,VGS=0V,Tj=25C
VDS=600V,VGS=0V,Tj=150C
IGSS
100
nA
VGS=20V,VDS=0V
RDS(on)
0.90
2.34
1.00
-
VGS=10V,ID=1.5A,Tj=25C
VGS=10V,ID=1.5A,Tj=150C
Gate resistance
RG
16
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
VGS(th)
2.50
IDSS
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
280
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
21
pF
VGS=0V,VDS=100V,f=1MHz
Co(er)
14
pF
VGS=0V,VDS=0...480V
Co(tr)
57
pF
ID=constant,VGS=0V,VDS=0...480V
td(on)
10
ns
VDD=400V,VGS=13V,ID=1.9A,
RG=12.2
Rise time
tr
ns
VDD=400V,VGS=13V,ID=1.9A,
RG=12.2
td(off)
60
ns
VDD=400V,VGS=13V,ID=1.9A,
RG=12.2
Fall time
tf
13
ns
VDD=400V,VGS=13V,ID=1.9A,
RG=12.2
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
1.5
nC
VDD=480V,ID=1.9A,VGS=0to10V
Qgd
6.5
nC
VDD=480V,ID=1.9A,VGS=0to10V
Qg
13
nC
VDD=480V,ID=1.9A,VGS=0to10V
Vplateau
5.4
VDD=480V,ID=1.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
2)
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Values
Unit
Note/TestCondition
VGS=0V,IF=1.9A,Tf=25C
220
ns
VR=400V,IF=1.9A,diF/dt=100A/s
1.5
VR=400V,IF=1.9A,diF/dt=100A/s
12
VR=400V,IF=1.9A,diF/dt=100A/s
Min.
Typ.
Max.
VSD
0.9
trr
Qrr
Irrm
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
101
1 s
10 s
4
100 s
ID[A]
Ptot[W]
100
3
1 ms
10
-1
10 ms
DC
10-2
25
50
75
100
125
10-3
150
100
101
TC[C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
102
10
1 s
10 s
0.5
100 s
100
101
0.2
1 ms
ZthJC[K/W]
ID[A]
0.1
10 ms
-1
10
0.05
10
0.02
0.01
DC
single pulse
10-2
10-3
10-1
100
101
102
103
10-2
10-5
10-4
10-3
VDS[V]
10-1
100
101
tp[s]
ID=f(VDS);TC=80C;D=0;parameter:tp
10-2
ZthJC=f(tP);parameter:D=tp/T
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
14
9
20 V
10 V
8V
20 V
8
10 V
12
8V
10
6
8
ID[A]
ID[A]
7V
7V
5
4
6V
5.5 V
5V
6V
5.5 V
2
5V
4.5 V
4.5 V
0
10
15
20
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25C;parameter:VGS
ID=f(VDS);Tj=125C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
5.0
3.0
5V
5.5 V
4.5
6V
6.5 V
7V
2.5
4.0
2.0
RDS(on)[]
RDS(on)[]
3.5
3.0
2.5
10 V
98%
1.5
typ
1.0
2.0
0.5
1.5
1.0
0.0
-50
-25
25
ID[A]
RDS(on)=f(ID);Tj=125C;parameter:VGS
50
75
100
125
150
Tj[C]
RDS(on)=f(Tj);ID=1.5A;VGS=10V
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
12
10
25 C
9
10
120 V
480 V
VGS[V]
ID[A]
6
150 C
5
4
3
2
1
0
10
12
VGS[V]
10
15
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
10
50
25 C
125 C
45
40
35
101
IF[A]
EAS[mJ]
30
25
20
0
10
15
10
5
10-1
0.0
0.5
1.0
1.5
2.0
25
50
VSD[V]
100
125
150
Tj[C]
IF=f(VSD);parameter:Tj
75
EAS=f(Tj);ID=0.8A;VDD=50V
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
103
660
Ciss
640
620
C[pF]
VBR(DSS)[V]
102
600
Coss
101
580
Crss
560
100
540
520
-75
-50
-25
25
50
75
100
125
150
175
10-1
100
200
Tj[C]
300
400
500
600
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
3.0
2.5
Eoss[J]
2.0
1.5
1.0
0.5
0.0
100
200
300
400
500
600
VDS[V]
Eoss=f(VDS)
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
Irrm
Rg1 = Rg 2
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
V(BR)DS
ID
VDS
VDS
10
ID
VDS
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
6PackageOutlines
DOCUMENT NO.
Z8B00180553
SCALE
DIM
A
A1
A2
b
b2
c
D
E
E1
e
e1
L
N
O
MILLIMETERS
MIN
MAX
1.52
1.80
0.10
1,50
1.70
0.60
0.80
2.95
3.10
0.24
0.32
6.30
6.70
6.70
7.30
3.30
3.70
2.3 BASIC
4.6 BASIC
0.75
1.10
3
INCHES
MIN
0.060
0.059
0.024
0.116
0.009
0.248
0.264
0.130
MAX
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0.091 BASIC
0.181 BASIC
0.030
0.043
3
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
24-02-2016
REVISION
01
Figure1OutlinePG-SOT223,dimensionsinmm/inches
11
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
7AppendixA
Table11RelatedLinks
IFXCoolMOSWebpage:www.infineon.com
IFXDesigntools:www.infineon.com
12
Rev.2.0,2016-04-29
600VCoolMOSCEPowerTransistor
IPN60R1K0CE
RevisionHistory
IPN60R1K0CE
Revision:2016-04-29,Rev.2.0
Previous Revision
Revision
Date
2.0
2016-04-29
TrademarksofInfineonTechnologiesAG
AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade,
EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon,
ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE,
PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS,
SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
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Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
13
Rev.2.0,2016-04-29